Suppressed IR sensitivity

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For UV to visible, precision photometry; suppressed IR sensitivity These Si photodiodes have suppressed IR sensitivity. They are suitable for low-light-level detection in analysis and the like. Features High UV sensitivity (quartz window type): QE 75 % (λ=2 nm) Suppressed IR sensitivity Low dark current Applications Analytical equipment Optical measurement equipment, etc. Structure / Absolute maximum ratings Type no. Window material Package size Effective photosensitive Reverse voltage VR max Absolute maximum ratings Operating temperature Topr Storage temperature Tstg (mm) (mm) (mm 2 ) (V) ( C) ( C) S1227-16BQ* Quatz 2.7 15 1.1 5.9 5.9 S1227-16BR potting S1227-33BQ* Quatz 6 7.6 2.4 2.4 5.7 S1227-33BR potting 5-2 to +6-2 to +8 S1227-66BQ* Quatz 8.9 1 5.8 5.8 33 S1227-66BR potting S1227-11BQ* Quatz 15 16.5 1 1 1 S1227-11BR potting * Refer to Precautions against UV light exposure. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Spectral Peak response sensitivity range wavelength λ λp Photosensitivity S (A/W) Short circuit current Isc 1 lx Dark current ID VR=1 mv Max. Temp. coefficient TCID Rise time tr VR= V RL=1 kω Terminal capacitance Ct VR= V f=1 khz Shunt resistance Rsh VR=1 mv (GΩ) Noise equivalent power NEP Type no. 2 nm He-Ne Min. Typ. Laser λp 633 (nm) (nm) Min. Typ. Min. Typ. nm (μa) (μa) (pa) (times/ C) (μs) (pf) (W/Hz 1/2 ) S1227-16BQ 19 to 1 6 2 4 2. 3.2 2.5 1 5 17 2 2 S1227-16BR 34 to 1.43 - - 9 2.2 3.7 2.1 1 S1227-33BQ 19 to 1 6 2 4 2. 3. 2.5 1 5 16 2 2 S1227-33BR 34 to 1.43 - - 9 2.2 3.7 2.1 1 72 1.12 S1227-66BQ 19 to 1 6 2 4 11 16 5. 1 2 2 95 5 S1227-66BR 34 to 1.43 - - 9 13 19 4.2 1 S1227-11BQ 19 to 1 6 2 4 32 44 8. 1 5 7 3.2 2 S1227-11BR 34 to 1.43 - - 9 36 53 6.7 1 www.hamamatsu.com 1

Spectral response S1227-BQ series S1227-BR series.7.7.6.6 Photosensitivity (A/W).4.2 Photosensitivity (A/W).4.2 19 4 6 8 1 19 4 6 8 1 KSPDB94EC KSPDB37EA Photosensitivity temperature characteristics Dark current vs. reverse voltage +1.5 (Typ. ) 1 na Temperature coefficient (%/ C) +1. + Dark current 1 pa 1 pa 1 pa S1227-11BQ/BR S1227-66BQ/BR S1227-33BQ/BR S1227-16BQ/BR - 19 4 6 8 1 1 fa.1 1 1 Reverse voltage (V) KSPDB3EB KSPDB96EB 2

Dimensional outlines (unit: mm) S1227-16BQ S1227-16BR Hole (2 ).8 2.7 ± Hole (2 ).8 2.7 ± 1.1 5.9 1.1 5.9.85 15 ± 5 13.5 ± 3 12.2 1.5 ± 5 15 ± 5 13.5 ± 3 1.5 ± 6.2 6.2 8.5 ±.2 8.5 ±.2 upper of the package. KSPDA95EB KSPDA94EB 2.4 2.4 S1227-33BQ 7.6 ± 6. ± 2.4 2.4 7.6 ± S1227-33BR 6. ± 5.75 6.6 ± 4.5 ±.2 5. ± 2. ± 1 5.65 6.6 ± 4.5 ±.2 5. ± 1 2. ± KSPDA96EB upper of the package. KSPDA97EB 3

S1227-66BQ S1227-66BR 5.8 5.8 1 ± 8.9 ± 5.8 5.8 1 ± 8.9 ±.75 9.2 ± 7.4 ±.2 8. ± 2. ± 1.65 9.2 ± 7.4 ±.2 8. ± 1 2. ± upper of the package. KSPDA98EB KSPDA99EB S1227-11BQ S1227-11BR 1 1 16.5 ±.2 15. ± 5 1 1 16.5 ±.2 15. ± 5.9 2.15 ±.8 2.15 ± 1 1 15.1 ± 15.1 ± 12.5 ±.2 12.5 ±.2 13.7 ± 13.7 ± upper of the package. KSPDA1EB KSPDA11EB 4

Precautions against UV light exposure When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product s component materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the photosensitive by using an aperture or the like. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions Disclaimer Metal, ceramic, plastic package products Technical information Si photodiode/application circuit examples Information described in this material is current as of October, 215. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 36 Foothill Road, Bridgewater, N.J. 887, U.S.A., Telephone: (1) 98-231-96, Fax: (1) 98-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 1, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71, Fax: 33-(1) 69 53 71 1 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 1 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 177-294888, Fax: (44) 177-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 1644 Kista, Sweden, Telephone: (46) 8-59-31-, Fax: (46) 8-59-31-1 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 22 Arese (Milano), Italy, Telephone: (39) 2-93581733, Fax: (39) 2-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B121, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 12, China, Telephone: (86) 1-6586-66, Fax: (86) 1-6586-2866 Cat. No. KSPD136E7 Oct. 215 DN 5