Si photodiode. Applicable to lead-free solder reflow and wide temperature range. S9674. Absolute maximum ratings

Similar documents
Parameter Specification Unit Photosensitive area mm Package Glass epoxy - Seal material Silicone resin -

Parameter Specification Unit Photosensitive area mm Package Glass epoxy - Seal material Epoxy resin -

Effective photosensitive area (mm) Photosensitive area size

RGB color sensor. Effective photosensitive area. Green, Red: 2.25 Blue : 4.5

M=100, RL=50 Ω λ=800 nm, -3 db

Parameter Symbol Specification Unit Photosensitive area - ɸ0.8 mm Package mm

These Si photodiodes have sensitivity in the UV to near IR range. They are suitable for low-light-level detection in analysis and the like.

Suppressed IR sensitivity

Reverse voltage VR max. Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Short. Temp. S coefficient (A/W) of

Effective photosensitive area. Photosensitive area size

Applications. Photosensitive area size. Storage temperature Tstg (mm) (mm 2 ) (V) ( C) ( C) S

Si PIN photodiodes. High-speed detectors with plastic package. Structure. Absolute maximum ratings

Effective photosensitive area (mm)

Short wavelength type APD. Effective photosensitive area (mm) Effective photosensitive area size* 2

Photosensitive area size (mm) Reverse voltage VR max (V) R to +60

Effective photosensitive* 2 area size. Storage temperature Tstg (mm) ( C) ( C) S φ0.2 φ0.5 S φ to to +100 S9075

Peak emission wavelength: 4.3 μm

Si PIN photodiodes. High-speed detectors with plastic package. Structure. Absolute maximum ratings

Low bias operation, for 800 nm band

1-D PSD with small plastic package

Photo IC diode. Wide operating temperature: -40 to +105 C. S MT. Absolute maximum ratings (Ta=25 C)

Peak emission wavelength: 3.9 μm

MPPC (multi-pixel photon counter)

Non-discrete position sensors utilizing photodiode surface resistance

High-speed photodiodes (S5973 series: 1 GHz)

Photon counting module

Photo IC diode. COB (chip on board) type, small package. S CT. Absolute maximum ratings

Between elements measure. Photosensitive area (per 1 element)

Reduced color temperature errors

Photo IC diode. Plastic package shaped the same as metal package. S SB. Absolute maximum ratings (Ta=25 C)

Photosensor with front-end IC

16-element Si photodiode arrays

InAsSb photovoltaic detector

APD modules. Operates an APD with single 5 V supply (standard type, short-wavelength type) C12702 series.

Signal processing circuit for 2-D PSD

Optics modules. Absorbance measurement module with built-in photodiode array, optical elements, current-tovoltage. C13398 series.

InAsSb photovoltaic detectors

APD modules. APD module integrated with peripheral circuits. C12703 series. Selection guide. Block diagram

PbSe photoconductive detectors

Signal processing circuit for 1-D PSD

16-element Si photodiode arrays

MPPC modules. MPPC array modules for very-low-level light detection, 16 ch analog output. C13368/C13369 series (Analog output type)

Signal processing circuit for 2-D PSD

Driver circuit for MPPC

Photo IC diode. Plastic package shaped the same as metal package. S SB. Features. Applications

InAsSb photovoltaic detectors

16-element Si photodiode arrays

InAsSb photovoltaic detector

InGaAs PIN photodiode arrays

Signal processing circuit for 1-D PSD

Peak sensitivity wavelength λp (nm) Photosensitive area (mm)

Power supply for MPPC

Infrared detector modules with preamp

16-element Si photodiode arrays

Photosensitive area (mm) 4 4. Peak sensitivity wavelength (nm) Supply voltage Dark state. Max. Vcc max. Tstg Min. Max. (ma) (V)

MCT photoconductive detectors

Driver circuit for CMOS linear image sensor

Driver circuit for InGaAs linear image sensor

MPPC (Multi-Pixel Photon Counter)

Driver circuit for CCD linear image sensor

MCT photoconductive detectors

MPPC (Multi-Pixel Photon Counter) arrays

InGaAs multichannel detector head

CMOS linear image sensor

MPPC (Multi-Pixel Photon Counter)

Power supply for MPPC

APD module. Variable gain, stable detection even at high gain. C Applications. Features. Sensitivity vs.

NMOS linear image sensor

Application OCT. Dimensions (mm) Weight (g) Operating temperature* 1 Storage temperature* 1 λ=1.55 μm (V) (mw)

12-bit digital output

CMOS linear image sensors

Driver circuits for CCD image sensor

Driver circuit for CCD linear image sensor

S P. Ultra-miniature, high performance Electromagnetically driven laser scanning MEMS mirror. Features.

Driver circuit for CMOS linear image sensor

CMOS linear image sensor

Driver circuits for photodiode array with amplifier

CMOS linear image sensors

Photo IC for optical switch

Driver circuit for InGaAs linear image sensor

Accessories for infrared detector

Driver circuit for CCD linear image sensor

CMOS linear image sensor

Photodiode modules. C10439 series. Integrates photodiode for precision photometry with low-noise amp.

Applications. Number of terminals. Supply voltage (op amp) Vcc

Applications. l Image input devices l Optical sensing devices

CMOS linear image sensor

CMOS linear image sensors

Variable gain and stable detection even at high gains

Near infrared image sensor (0.9 to 1.7 µm) with high-speed data rate

InGaAs linear image sensors

Mini-spectrometer. SMD series C14384MA-01. High sensitivity in the near infrared region (to 1050 nm), ultra-compact grating type spectrometer

CMOS linear image sensor

InGaAs linear image sensors

Distance linear image sensor

Artisan Technology Group is your source for quality new and certified-used/pre-owned equipment

Distance area image sensor

Driver circuit for CCD image sensor

LCOS-SLM (Liquid Crystal on Silicon - Spatial Light Modulator)

CMOS linear image sensors. CMOS linear image sensors. Built-in timing generator and signal processing circuit; 3.3 V single supply operation

Transcription:

Applicable to lead-free solder reflow and wide temperature range The is a photodiode that is applicable to lead-free solder reflow and has an extremely wide operating and storage temperature range (-40 to +125 C). The small and thin leadless package allows reducing the mount area on a printed circuit board. Features Suitable for lead-free solder reflow Surface mount type, small and thin leadless package Operating/storage temperature: -40 to +125 C Photosensitive area: 2 2 mm High sensitivity: 0.7 A/W (λ=960 nm) Applications Rain sensor Sun sensor, etc. Absolute maximum ratings Parameter Symbol Value Unit Reverse voltage VR max. 10 V Operating temperature Topr -40 to +125 C Storage temperature Tstg -40 to +125 C Reflow soldering condition* 1 Tsol Peak temperature 260 C, two times (see page 5) - Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *1: JEDEC level 4 Electrical and optical characterisitcs (Ta=25 C) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 320 to 1100 - nm Peak sensitivity wavelength λp - 960 - nm Photo sensitivity S λ=λp 0.6 0.7 - A/W Short circuit current Isc 100 lx, 2856 K - 4.8 - μa Temperature coefficient of Isc - - +0.1 - %/ C Half-value angle - - ±60 - degree Dark current ID VR=5 V - 0.01 1 na Temperature coefficient of ID TCID - 1.12 - times/ C Rise time tr VR=0 V, RL=1 kω 10 to 90% - 2 - μs Terminal capacitance Ct VR=0 V, f=10 khz - 500 - pf www.hamamatsu.com 1

Spectral response Photosensitivity temperature characteristics 0.8 1.5 (Typ.) 0.7 Photoensitivity (A/W) 0.6 0.5 0.4 0.3 0.2 0.1 QE=100% Temperature coefficient (%/ C) 1 0.5 0 0 200 400 600 800 1000 1200-0.5 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) Wavelength (nm) KSPDB0248EA KSPDB0322EB Linearity Dark current vs. reverse voltage 1 ma (Typ. Ta=25 C, VR=0 V, 2856 K) 1 na 100 μa 100 pa Short circuit current 10 μa 1 μa 100 na Dark current 10 pa 1 pa 10 na 1 10 100 1000 10000 100 fa 0.01 0.1 1 10 100 Illuminance (lx) Reverse voltage (V) KSPDB0323EA KSPDB0250EB 2

Terminal capacitance vs. reverse voltage Directivity Terminal capacitance 10 nf 1 nf 100 pf (Typ. Ta=25 C, light source: tungsten lamp) 10 0 10 20 30 40 50 60 70 80 90 100 80 60 40 20 0 20 Relative sensitivity (%) 20 30 40 50 60 70 80 90 40 60 80 100 KSPDB0249EA 10 pf 0.1 1 10 100 Reverse voltage (V) Dimensional outline (unit: mm) Photosensitive area (2 2) Cathode index 5.7 4.6 (4.1) Photosensitive surface 1.4 ± 0.2 0.85 (0.55) 2.5 3.1 4.0 Photosensitive surface 1.05 3.3 1.05 (2 ) R0.3 (6.5) 0.8 (3.2) (2.8) KSPDB0251EA Recommended land pattern Tolerance unless otherwise noted: ±0.15, ±2 KSPDA0179EC 3

Standard packing specifications Reel (conforms to JEITA ET-7200) Dimensions Hub diameter Tape width Material Electrostatic characteristics 254 mm 100 mm 12 mm Polystyrene Conductive Embossed tape (unit: mm, material: polystyrene, conductive) ϕ1.5 +0.1-0 8 ± 0.1 2 ± 0.1 4 ± 0.1 0.3 ± 0.05 5.5 ± 0.05 12 ± 0.3 1.75 ± 0.1 6 ± 0.1 ϕ1.5 +0.2-0 1.65 ± 0.1 4.3 ± 0.1 Reel feed direction KSPDC0088EA Packing quantity 2000 pcs/reel Packing type Reel and desiccant in moisture-proof packaging (vacuum-sealed) 4

Measured example of temperature profile with our hot-air reflow oven for product testing 300 C 260 C max. 230 C Temperature 190 C 170 C Preheat 60 to 120 s Soldering 20 to 40 s max. Time KPINB0385EB This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 C or less and a humidity of 60% or less, and perform soldering within 72 hours. The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before actual reflow soldering, check for any problems by tesitng out the reflow soldering methods in advance. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions Disclaimer Surface mount type products Technical information Si photodiode / Application circuit examples Information described in this material is current as of July, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1070E05 Jul. 2015 DN 5