High-speed response and high sensitivity in the spectral band up to 5 μm Infrared detectors The are photovoltaic type infrared detectors that have achieved high sensitivity in the spectral band up to 5 μm using Hamamatsu original crystal growth technology and process technology. The room temperature operation type offering easy handling includes the mount ceramic type which supports lead free reflow soldering. This type enables support for automation of mounting and a reduced mounting area achieved through miniaturization. The lineup also includes the TEcooled type, which deliver stable high S/N measurement through their large photosensitive area. Features Applications High sensitivity High-speed response High shunt resistance Small size ceramic package for mount (P3243-3CA) Applicable to lead-free solder reflow (P3243-3CA) Thermoelectrically cooled type (P3243-22MS/-222MS) Gas detection (CH4, CO2, CO, etc.) Radiation thermometer Flame detection Option (sold separately) Heatsink for one-stage A379 Heatsink for two-stage A379- Temperature controller C3-4 Amplifier for infrared detector C459- Structure Dimensional outline/ area Field of view Typ no. Package Cooling Windsow material (mm) (degrees) P3243-MA /Si with AR coating TO-46-82.7.7 P3243-3CA /Si with AR coating Ceramic - 2 P3243-22MS /Sapphire One-stage TE-cooled 34 TO-8 2 2 P3243-222MS /Sapphire Two-stage TE-cooled 6 Absolute maximum rating Typ no. TE-cooler allowable current (A) Thermistor power dissipation (mw) Reverse voltage VR (V) Operationg temperature Topr ( C) Storage temperature Tstg ( C) Incident light level (W/cm 2 ) Soldering conditions P3243-MA - - 26 C or less, within s -4 to +85-4 to +85 P3243-3CA - - Peak temperature 24 C max* P3243-22MS.5 26 C or less, within s.2-4 to +6-4 to +6 P3243-222MS. 26 C or less, within s *: Refer to P7. JEDEC level 2 Note: Exceeding the absolute maximum rating even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum rating. www.hamamatsu.com
Electrical and optical characteristics (Ta=25 C) Typ no. Measurement condition Chip temperature ( C) Peak sensitivitiy wavelength λp (μm) Cutoff wavelength λc Photosensitivity S λ=λp* 2 Shunt resistance Rsh Min. (kω) Typ. (kω) Detectivity D* (λp, 2, ) Min. (cm Hz /2 /W) Typ. (cm Hz /2 /W) Noise equivalent power NEP λ=λp Typ. (W/Hz /2 ) Max. (W/Hz /2 ) Rise time tr* 3 (μm) (ma/w) (V/W) (ns) P3243-MA 25 5.3 4.5 3 2 3 8. 8. 9 7. - 8.8-6 P3243-3CA 4. P3243-22MS - 5.2 8.6 5 9.5 9. 9.9 9. - 2. - P3243-222MS -3 5. 8.8 5 6.5 33.6 9 2.8 9.7 -.3 - *2: Uniform irradiation on the entire photosensitive area *3: VR= V, RL=5 Ω, to 9%, λ=.55 μm Note: Uniform irradiation must be applied to the entire photosensitive area. Spectral response (D*) P3243-22MS (Typ. Ta=25 C) P3243-222MS Shunt resistance vs. chip temperature MΩ (Typ.) MΩ P3243-MA/-3CA D* (cm Hz /2 /W) 9 8 P3243-MA/-3CA Shunt resistance kω P3243-22MS/-222MS kω 7 2 3 4 5 6 kω -6-4 -2 2 4 6 8 Wavelength (μm) Chip temperature ( C) KIRDB658EA KIRDB659EA 2
Spectral transmittance characteristics of window materials Linearity (Typ. Ta=25 C) μa (Typ. Ta=25 C, λ=.55 μm) 8 μa Transmittance (%) 6 4 Si with AR coating Sapphire Photocurrent na na na 2 pa 2 3 4 5 6 7 8 pa - 2 3 4 5 Wavelength (μm) Incident light level (μw) KIRDB66EA KIRDB65EA Current vs. voltage characteristics of TE-cooler.6 (Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W) Cooling characteristics of TE-cooler 3 (Typ. Ta=25 C, Thermal resistance of heat sink=3 C/W) Current (A).4.2..8.6.4 One-stage Two-stage Element temperature ( C) 2 - -2-3 One-stage.2-4 Two-stage.2.4.6.8..2-5.4.8.2.6 Voltage (V) TE-cooler current (A) KIRDB5EB KIRDB8EA 3
Thermistor temperature characteristics 6 (Typ.) Resistance (Ω) 5 4 3-4 -2 2 Element temperature ( C) KIRDB649EA Measurement circuit example Chopper 2 Hz Detector FFT analyzer, etc. Black body 8 K Amp fo=2 Hz f=6 Hz Incident energy=245 μw/cm 2 KIRDC25EA 4
Dimensional outlines (unit: mm) P3243-MA P3243-3CA 2.5 area.7.7 area.7.7 2.6 ±.2 2. ±.2 ϕ4.6 ±.2 ϕ5.4 ±.2 2. ±.2 2.6 ±.2 2.5.35 ±.2 Window ϕ.45 Lead 2.8 ±.2 2. ±.5.5.8.85.65.8.3 ±.5 3. ϕ2.5 ±.2 2.2 2.2 3..3.5.3 Cathode Case Anode KIRDA249EC Recommended land pattern KIRDA259EB 5
Y P3243-22MS Y P3243-222MS X area 2. 2. ϕ. ±.2 ϕ4. ±.2 ϕ5.3 ±.2 X area 2. 2. ϕ. ±.2 ϕ4. ±.2 ϕ5.3 ±.2.65 ±.5 4.3 ±.2 6.4 ±.2.65 ±.5 6.9 ±.2. ±.2 ϕ.45 Lead 2 min. ϕ.45 Lead 2 min..2 ±.2 Distance from photosensitive area center to cap center -.3 X +.3 -.3 Y +.3.2 ±.2 Distance from photosensitive area center to cap center -.3 X +.3 -.3 Y +.3 5. ±.2 5. ±.2 Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor 5. ±.2 5. ±.2 Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor KIRDA26EC KIRDA26EC 6
Recommended temperature profile for reflow soldering (P3243-3CA) 24 C max. 22 C Temperature 9 C 7 C Preheat 7 to 9 s Soldering 4 s max. Time KIRDB66EA After unpacking, store the device in an environment at a temperature range of 5 to 3 C and a humidity of 6% or less, and perform reflow soldering with year. The effect that the product is subject to during reflow soldering varies depending on the circuit board and reflow furnace that are used. When setting the reflow conditions, check that problems do not occur in the product by testing out the conditions in advance. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions Disclaimer Information described in this material is current as of October 28. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 26- Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (8) 53-434-33, Fax: (8) 53-434-584 U.S.A.: Hamamatsu Corporation: 36 Foothill Road, Bridgewater, N.J. 887, U.S.A., Telephone: () 98-23-96, Fax: () 98-23-28, E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr., D-822 Herrsching am Ammersee, Germany, Telephone: (49) 852-375-, Fax: (49) 852-265-8, E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 9, Rue du Saule Trapu, Parc du Moulin de Massy, 9882 Massy Cedex, France, Telephone: 33-() 69 53 7, Fax: 33-() 69 53 7, E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, Tewin Road, Welwyn Garden City, Hertfordshire AL7 BW, United Kingdom, Telephone: (44) 77-294888, Fax: (44) 77-325777, E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 644 Kista, Sweden, Telephone: (46)8-59 3, Fax: (46)8-59 3, E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, int. 6, 22 Arese (Milano), Italy, Telephone: (39)2-93 58 7 33, Fax: (39)2-93 58 7 4, E-mail: info@hamamatsu.it China: Hamamatsu Photonics (China) Co., Ltd.: B2, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 2, China, Telephone: (86) -6586-66, Fax: (86) -6586-2866, E-mail: hpc@hamamatsu.com.cn Taiwan: Hamamatsu Photonics Taiwan Co., Ltd.: 8F-3, No. 58, Section2, Gongdao 5th Road, East District, Hsinchu, 3, Taiwan R.O.C. Telephone: (886)3-659-8, Fax: (886)3-659-8, E-mail: info@hamamatsu.com.tw Cat. No. KIRD3E7 Oct. 28 DN 7