InAsSb photovoltaic detector P2-2 High-speed response and high sensitivity in the 5 μm spectral band Thermoelectrically cooled infrared detector with no liquid nitrogen required The P2-2 is an infrared detector that provides high sensitivity in the 5 μm spectral band due to our unique crystal growth technology. The InAsSb photovoltaic detector has a PN junction that ensures high-speed response and high reliability. Typical applications include gas analysis such as CO2, SOx, CO and NOx. Unlike the P2-9 metal dewar type detector, the P2-2 is easy to use as it uses a compact package (TO-8) not requiring liquid nitrogen. Features High-speed response High sensitivity High reliability Compact, thermoelectrically cooled TO-8 package Environment-friendly due to use of InAsSb Can be assembled in a module with QCL Applications Gas analysis Radiation thermometers Thermal imaging Remote sensing FTIR Spectrophotometry Options (sold separately) Heatsink for two-stage TE-cooled type A379- Temperature controller C3-4 Infrared detector module with preamp (custom made product) Structure Parameter Specification Unit Window material Sapphire - Package TO-8 - Cooling Two-stage TE-cooled - Photosensitive area ϕ. mm Absolute maximum ratings Parameter Symbol Value Unit Thermistor power dissipation -.2 mw Reverse voltage VR. V Operating temperature Topr -4 to +6 C Storage temperature Tstg -55 to +6 C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com
Electrical and optical characteristics (Td=-3 C) Parameter Symbol Condition Min. Typ. Max. Unit Peak sensitivity wavelength λp 4. 4.9 - μm Cutoff wavelength λc 5.6 5.9 - μm Photo sensitivity S λ=λp.8.6 - A/W Shunt resistance Rsh VR= mv 3 - Ω Detectivity D* (λp, 6, ) 3.5 9 5. 9 - cm Hz /2 /W Noise equivalent power NEP λ=λp -.8-2.5 - W/Hz /2 Rise time tr VR= V, RL=5 Ω to 63% -.4 - μs Spectral response (D*) Spectral response C-H type CO2, SOX CO NOX (Typ. Td=-3 C).8 (Typ. Td=-3 C).6.4 D* (cm Hz /2 /W) 9 Photo sensitivity (A/W).2..8.6.4.2 8 2 3 4 5 6 2 3 4 5 6 Wavelength (μm) Wavelength (μm) KIRDB452EA KIRDB453EA 2
Dark current vs. reverse voltage Shunt resistance vs. element temperature A (Typ.) (Typ.) ma Dark current ma ma Td=25 C Td=- C Td=-3 C Shunt resistance (Ω) μa.. -8-6 -4-2 2 4 Reverse voltage (V) Element temperature ( C) KIRDB454EA KIRDB455EA Linearity (Typ. λ=.55 μm) Optical output power (μa)... Incident light level (mw) KIRDB456EA 3
Specifications of two-stage TE-cooler (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Allowable current Ic - -. A Allowable voltage Vc - -.95 V Thermistor resistance Rth 8. 9. 9.9 kω Thermistor power dissipation Pth - -.2 mw Current vs. voltage of TE-cooled type Cooling characteristics of TE-cooled type (Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W).2 (Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W) 3. 2 Current (A).8.6.4 Element temperature ( C) - -2-3.2-4.2.4.6.8. -5.2.4.6.8. Voltage (V) Current (A) KIRDB459EA KIRDB464EA Thermistor temperature characteristic 6 (Typ.) Resistance (Ω) 5 4 3-4 -3-2 - 2 3 Element temperature ( C) KIRDB6EA 4
Measurement circuit example Chopper 6 Hz Detector Band-pass filter r.m.s. meter Black body 8 K fo=6 Hz Δf=6 Hz Incident energy 245 μw/cm 2 KIRDC94EA Dimensional outline (unit: mm) ϕ5.3 ±.2 ϕ4 ±.2 Window ϕ ±.2 ±.2 Photosensitive surface ϕ.45 Lead 6.9 ±.2 2 min..2 ±.2 5. ±.2 5. ±.2 5. ±.2 Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor KIRDA22EA 5
Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions Notice Metal, ceramic, Plastic products Technical information infrared detector Information described in this material is current as of November, 24. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 26- Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (8) 53-434-33, Fax: (8) 53-434-584 U.S.A.: Hamamatsu Corporation: 36 Foothill Road, Bridgewater, N.J. 887, U.S.A., Telephone: () 98-23-96, Fax: () 98-23-28 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr., D-822 Herrsching am Ammersee, Germany, Telephone: (49) 852-375-, Fax: (49) 852-265-8 France: Hamamatsu Photonics France S.A.R.L.: 9, Rue du Saule Trapu, Parc du Moulin de Massy, 9882 Massy Cedex, France, Telephone: 33-() 69 53 7, Fax: 33-() 69 53 7 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, Tewin Road, Welwyn Garden City, Hertfordshire AL7 BW, United Kingdom, Telephone: (44) 77-294888, Fax: (44) 77-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 644 Kista, Sweden, Telephone: (46) 8-59-3-, Fax: (46) 8-59-3- Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, int. 6, 22 Arese (Milano), Italy, Telephone: (39) 2-9358733, Fax: (39) 2-935874 China: Hamamatsu Photonics (China) Co., Ltd.: B2, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 2, China, Telephone: (86) -6586-66, Fax: (86) -6586-2866 Cat. No. KIRD3E3 Nov. 24 DN 6