Production and Development status of MPPC

Similar documents
CAEN Tools for Discovery

Current status of Hamamatsu Si detectors mainly for High Energy Physics Experiments

MPPC (multi-pixel photon counter)

Studies of large dynamic range silicon photomultipliers for the CMS HCAL upgrade

MPPC and MPPC module for precision measurement

MPPC (Multi-Pixel Photon Counter)

Time Resolution Improvement of an Electromagnetic Calorimeter Based on Lead Tungstate Crystals

Solid State Photon-Counters

Silicon PhotoMultiplier Kits

PoS(PhotoDet 2012)018

HAPD and Electronics Updates

Tests of Timing Properties of Silicon Photomultipliers

Application of Hamamatsu MPPC to T2K near neutrino detectors

Advances in multi-pixel Geiger mode APDs (Silicon Photomultipliers).

Institute of Electrical and Electronics Engineers (IEEE)

Liquid Xenon Scintillation Detector with UV-SiPM Readout for MEG Upgrade

MPPC (Multi-Pixel Photon Counter) arrays

Scintillation Tile Hodoscope for the PANDA Barrel Time-Of-Flight Detector

Sensors for precision timing HEP

MPPC (Multi-Pixel Photon Counter)

A very brief review of recent SiPM developments

Design and test of an extremely high resolution Timing Counter for the MEG II experiment: preliminary results

Pixelated Positron Timing Counter with SiPM-readout Scintillator for MEG II experiment

NMOS linear image sensor

THE TIMING COUNTER OF THE MEG EXPERIMENT: DESIGN AND COMMISSIONING (OR HOW TO BUILD YOUR OWN HIGH TIMING RESOLUTION DETECTOR )

Study of Timing and Efficiency Properties of Multi-Anode Photomultipliers

Citation X-Ray Spectrometry (2011), 40(6): 4. Nakaye, Y. and Kawai, J. (2011), ED

Performance of the MCP-PMT for the Belle II TOP counter

VTA0832H Series Linear Photodiode Array (PDA) for X-ray Scanning

Systematic study of innovative hygroscopic and non-hygroscopic crystals with SiPM array readout

Development of Ultra-High-Density (UHD) Silicon Photomultipliers with improved Detection Efficiency

MPPC modules. Photon counting module with built-in MPPC. C series C10751 series. Selection guide

VTA1216H Series Linear Photodiode Array (PDA) for X-ray Scanning

An extreme high resolution Timing Counter for the MEG experiment Upgrade

The Time-of-Flight Detector for the ALICE experiment

Large photocathode 20-inch PMT testing methods for the JUNO experiment

High ResolutionCross Strip Anodes for Photon Counting detectors

Spectroscopy on Thick HgI 2 Detectors: A Comparison Between Planar and Pixelated Electrodes

Between elements measure. Photosensitive area (per 1 element)

Applications. l Image input devices l Optical sensing devices

Non-discrete position sensors utilizing photodiode surface resistance

RGB color sensor. Effective photosensitive area. Green, Red: 2.25 Blue : 4.5

Signal processing circuit for 2-D PSD

An extreme high resolution Timing Counter for the MEG Upgrade

Photon counting module

16-element Si photodiode arrays

MPPC modules. MPPC array modules for very-low-level light detection, 16 ch analog output. C13368/C13369 series (Analog output type)

DATA ACQUISITION FOR MONOLITHIC SCINTILLATION DETECTORS IN PET APPLICATIONS

Photosensitive area size (mm) Reverse voltage VR max (V) R to +60

Investigation of time-of-flight PET detectors with depth encoding

Nuclear Instruments and Methods in Physics Research A

16-element Si photodiode arrays

Photonic Devices for Vehicle Evolution

Si PIN photodiodes. High-speed detectors with plastic package. Structure. Absolute maximum ratings

Si PIN photodiodes. High-speed detectors with plastic package. Structure. Absolute maximum ratings

Realization and Test of the Engineering Prototype of the CALICE Tile Hadron Calorimeter

Signal processing circuit for 2-D PSD

Updates on the Central TOF System for the CLAS12 detector

The Scintillating Fibre Tracker for the LHCb Upgrade. DESY Joint Instrumentation Seminar

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 52, NO. 5, OCTOBER

Beam test of the QMB6 calibration board and HBU0 prototype

16-element Si photodiode arrays

Photodetector Testing Facilities at Nevis Labs & Barnard College. Reshmi Mukherjee Barnard College, Columbia University

16-element Si photodiode arrays

Lifetime of MCP-PMTs

Signal processing circuit for 1-D PSD

3-D position sensitive CdZnTe gamma-ray spectrometers

New product of near infrared (to 900 nm) detection

Coincidence Detection using the Broadcom AFBR-S4N44P163 4 x 4 SiPM Array and the Vertilon SIB916 Sensor Interface Board Application Note

Applications. Number of terminals. Supply voltage (op amp) Vcc

QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR Surface-Mount Silicon Pin Photodiode

Sensors for the CMS High Granularity Calorimeter

Design of a Gaussian Filter for the J-PARC E-14 Collaboration

DSM Series Ultra Thin Surface Mount Single Digit 7-Segment LED Display


Single-sided CZT strip detectors

Photo IC diode. Wide operating temperature: -40 to +105 C. S MT. Absolute maximum ratings (Ta=25 C)

Quick Report on Silicon G-APDs (a.k.a. Si-PM) studies. XIV SuperB General Meeting LNF - Frascati

Reverse voltage VR max. Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Short. Temp. S coefficient (A/W) of

High sensitive photodiodes

Signal processing circuit for 1-D PSD

Single Photoelectron timing resolution of SiPM

Overview of All Pixel Circuits for Active Matrix Organic Light Emitting Diode (AMOLED)

V6118 EM MICROELECTRONIC - MARIN SA. 2, 4 and 8 Mutiplex LCD Driver

Photon detectors. J. Va vra SLAC

Parameter Specification Unit Photosensitive area mm Package Glass epoxy - Seal material Silicone resin -

InAsSb photovoltaic detectors

Applications. Photosensitive area size. Storage temperature Tstg (mm) (mm 2 ) (V) ( C) ( C) S

These Si photodiodes have sensitivity in the UV to near IR range. They are suitable for low-light-level detection in analysis and the like.

CCD 143A 2048-Element High Speed Linear Image Sensor

Spatial Response of Photon Detectors used in the Focusing DIRC prototype

Development of an Abort Gap Monitor for High-Energy Proton Rings *

The hybrid photon detectors for the LHCb-RICH counters

InAsSb photovoltaic detector

Near infrared image sensor (0.9 to 1.7 µm) with high-speed data rate

CCD220 Back Illuminated L3Vision Sensor Electron Multiplying Adaptive Optics CCD

Comparison Between DRS4 Chip-Based Boards and ADCs for a Flexible PET Electronics

LM16X21A Dot Matrix LCD Unit

Suppressed IR sensitivity

Photo IC diode. COB (chip on board) type, small package. S CT. Absolute maximum ratings

Transcription:

Production and Development status of MPPC Kazuhisa Yamamura 1 Solid State Division, Hamamatsu Photonics K.K. Hamamatsu-City, 435-8558 Japan iliation E-mail: yamamura@ssd.hpk.co.jp Kenichi Sato, Shogo Kamakura Solid State Division, Hamamatsu Photonics K.K. Hamamatsu-City, 435-8558 Japan iliation Shinji Ohsuka Central Research Laboratory, Hamamatsu Photonics K.K. Hamamatsu-City, 434-8601 Japan ffiliation The MPPC (Multi-Pixel Photon Counter) is a solid state device made up of multiple APD (Avalanche Photo Diode) pixels operated in Geiger mode. MPPC have excellent photon counting capability at room temperature. Hamamatsu Photonics released single channel devices having the active area of 1x1mm and 3x3mm and array devises having 4 or 16 channels. And we are developing low noise MPPC with a thermoelectrically cooler. As a good blue sensitivity, MPPC is well matched to detect the week emission light of scintillators for HEP or medical applications. For example, T2K experiment adopted MPPCs, and we have delivered 60Kpcs of 1.3x1.3mm-MPPCs. In mass production, we confirmed that the characteristic of MPPCs are very uniform between lot to lot. And as a good timing resolution and insensitive to magnetic field, MPPC is expected to use for the MRI-PET and TOF-PET detectors. For PET application, we are now evaluating energy resolution and timing resolution of 3x3mm MPPC coupled with LYSO. And we are measuring the response characteristic of each pixels in MPPC chip and studying the relationship between resistance of trace electrode and timing resolution. The evaluation result will be explained. International Workshop on New Photon Detectors (PD09) Shinshu University Matsumoto Japan 24-26 June 2009 1 Speaker Copyright owned by the author(s) under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike Licence. http://pos.sissa.it

1. Introduction The novel solid-state photon counting device called SiPM in general has been developed in Russia. The MPPC is a kind of SiPM family, but the structure is based on Hamamatsu Avalanche Photo Diode (APD) adopted by high energy experiment calorimeter. The features of MPPC are high gain (10 5 to 10 6 ), low bias voltage operation (<100V), room temperature operation, low dark count rate (<1MHz/mm2), high Photon Detection Efficiency (PDE), superior time resolution (<<1ns), insensitive to magnetic field, low power consumption and mechanical robustness. These features will be suitable for MRI-PET, TOF-PET, High energy physics experiment, astronomy, fluorescence measurement, DNA BIO-chip sequencer and environmental analysis [1] [2] [3] [4]. One of the most notable feature of MPPC is the good blue sensitivity by adapting the structure (we call HPK Reverse Structure ), and match to detect emission light of popular scintillators [5]. T2K experiment adopted MPPCs, and we have delivered 60Kpcs of 1.3mm -MPPCs without shipment problem. Timing resolution is the important future for PET application, we are now studying new MPPC for improving timing resolution. 2. Line up of MPPCs [6] Figure 1 shows the line up of Hamamatsu MPPC. S10362-11 series is the size of 1mm active area, and are three type of pixel pitch, 25um (1600 pixels), 50um (400 pixels), 100um (100 pixels). In addition, there are three type of package, CAN-type(U type), ceramic type (C type), SMD type (P type). Figure 2 shows the wavelength dependence of PDE(Photo Detection Efficiency, including the cross-talk and after pulse) of each type. The peak wavelength is around 440nm, and match to the general scintillator emission wavelength. Due to the nature of the package, at the less than 350nm, SMD type (P type) is smaller sensitivity than other package products. The recommended gain of 25,50,100 um pixel pitch MPPCs are 2.75x10 5, 7.5x10 5, 2.4x10 6 respectively. As gain is so sensitive to voltage and temperature, the operating voltage (Vop) and the temperature must be controlled. Figure 3 and 4 shows the gain dependent of Vop and temperature respectively. For example 50um pixel size which is, approximately 73%/1V, approximately 4%/ of the variation. For 3mm active area, there are S10362-33 series (ceramic type) and S10931 series (SMD type), and a pixel pitch of 25um (14400 pixels), 50um (3600 pixels), 100um (900 pixels). Assuming the use of PET, Combining S10362-050C with LYSO scintillator, we have obtained energy resolution of 11.8% (FWHM) and time resolution of 410ps (FWHM) for 511KeVγ-ray. (Figures 5 and 6) For MPPC array, there are S10984 series (1mm -1x4ch) and S10985 series (3mm - 2x2ch). These are monolithic arrays without gap between channels. S11064 series is the 4x4ch discrete array mounted 16 pieces of S10931 equivalent MPPCs on PCB. It is the merit that we can choose 16 devises whose characteristic are uniform. Figure 7 shows gain 2

uniformity of 3.5 ~ 7% (25um) and 2.5 ~ 13.5 %(50um) respectively. As each 16 channels have anode and cathode terminals, it can also be adjusted the voltage of channels separately. S11028 series is the 1mm -MPPC with a thermoelectrically cooler and temperature sensor in the TO-8 package. In use at room temperature and control MPPC temperature at -10, it can be used about 1 / 20 in dark count. Fig.1 Line up of MPPCs Fig.2 PDE vs. wavelength Fig.3 Gain vs. bias voltage Fig.4 Gain vs. temperature Fig.5 Energy resolution of 3mm -MPPC Fig.6 Timing resolution of 3mm -MPPC coupled with LYSO scintillator coupled with LYSO scintillator 3

Fig.7 Gain variation of 16ch-MPPC, 25um pixel type(left), 50um pixel type(right) 3. Mass production of MPPC for T2K experiment S10362-13-050C (1.3mm -50um pixel pitch) was adopted as photon sensor for T2K experiment. Figure 8 shows the photo of outline and the photo of housing provided by Kyoto University. Figure 9 shows the delivery history. From February in 2008 to February in 2009 we have delivered 63,885 pieces of MPPC smoothly. Figure 10 and 11 shows variation of Vop (voltage at gain=7.5x10 5 ) and dark counts for all MPPC delivered. Vop was 70 ± 2V and variations are small. Dark count 1.3Mcps specifications are fully satisfied with good distribution. Fig.8 MPPC for T2K Fig.9 Shipment history of MPPCs for T2K 4

num. 7,000 6,000 5,000 4,000 3,000 2,000 1,000 Vop distribution (S10362-13-050C) num. 3,500 3,000 2,500 2,000 1,500 1,000 500 0.5p.e. thr. dark count distribution (S10362-13-050C) 0 67 68 69 70 71 72 73 Vop at M=7.5x105 [V] 0 300 500 700 900 1100 1300 dark count [kcps] Fig.10 Vop distribution of MPPCs Fig.11 Dark count distribution of MPPCs for T2K for T2K 4. Timing resolution of MPPC Figure 12 shows the equivalent circuit and output pulse shape(red) derived from the equivalent circuit.[7] The Cq (parallel capacitance of quenching resistor) effect of spike-like first pulse (blue) has been introduced.[8 ] [9 ] For improved timing resolution, we made samples and compared by focusing on the following points: 1. To rise faster. Cd to reduce 2. To increase Cq effect for spike shape. Capacitance between pixel and readout tarce to increase 3. To reduce the variation of waveform between pixels to reduce the trace resistance Figure 13 shows the measurement setup of timing resolution. Single photon level is incident on MPPC and measure the time until the setting threshold. Measure 10K times and obtain the timing resolution by Gaussian fit of the histogram. Fig.12 Equivalent circuit of MPPC (left) and pulse shape explanation of MPPC (right) 5

Fig.13 Measurement setup for timing resolution Figure 14 shows picture of chip and experimental parameters of 1mm -100um samples. STD is a traditional device. Small pixel is the smaller pixel size than that of STD. Wide trace is the same pixel size of Small pixel but has wide trace electrode. Quenching resistance is obtained from the forward IV characteristics. Cd as the capacitance to affect the gain obtained from the linear bias dependence of gain. Ctotal is measured directly between the terminals. Cstray as the capacitance not to affect the gain obtained that Ctotal divided by the number of pixels minus the amount of Cd. The gain of Small pixel and Wide trace are the same because Cd and V are the same, but the Cstray of Wide trace is bigger than that of Small pixel, so it can be said that Cstray by expanding the trace electrode dose not affect the gain. Figure 15 shows the pulse shape and the threshold dependent of timing resolution of 1mm -100um samples. Wide trace has spike shape and best timing resolution of around 315pF (FWHM) at 28.9mV threshold and believed to Cq effect. In this case, Cq is not the capacitance of quenching resistor but the capacitance between the pixel electrode and trace electrode. Small pixel has better timing resolution than STD due to smaller Cd. Figure 16 and 17 shows these of 1mm -50um samples, The trends are the same as those of 100um samples, and about 285ps (FWHM) was obtained at 16.5mV threshold for Wide trace. Figure 18 shows the result of pulse shape variation between pixels of 1mm -50um samples. Laser light is incident on the center of the 21 pixels. Peak height and height ratio of 12ns are obtained. Peak height of Small pixel is larger than STD and smaller than Wide trace. Peak heights of Wide trace and Small pixel are smaller variation than STD (Left graph). Height ratio of Wide trace and Small pixel are smaller variation than STD (right graph). 6

Fig.14 100um pitch samples pictures of pixel(upper), parameters(lower) Fig.15 Pulse shape of 100um pitch each samples(upper) and measurement data of timing resolution of 1p.e. vs threshould(right) FWHM [ps] 400 350 300 1mm 100um(GAIN=2.4E+06 25 ) Timing resolution of 1p.e. vs threshould 250-10 -20-30 -40 Threshold [mv] STD Small pixel Wide trace -50-60 Fig.16 50um pitch samples pictures of pixel(upper), parameters(lower) 7

1mm 50um(GAIN=7.5E+05 25 ) Timing resolution of 1p.e. vs threshould FWHM[ps] 400 350 300 STD Small pixel Wide trace Fig.17 Pulse shape of 50um pitch each samples(upper) and measurement data of timing resolution of 1p.e. vs threshould(right) 250 0-10 -20-30 Threshold [mv] -40-50 Fig18. Pulse shape uniformity of 50um pitch samples position number of pixels(upper left), Description of pulse shape(upper-right) pulse height vs. pixel position(lower left), pulse decay vs. pixel position(lower right) 8

5. Conclusion We introduced line up of MPPCs, single channel type, array type, with a thermoelectrically cooler type. We explained the delivery history and variation of characteristics of 60K pieces MPPCs adapted for T2K. We confirmed that Wide trace device is effective for improving the timing resolution. References [1] V. Golovin, V. Saveliev, Novel type of avalanche photodetector with Geiger mode opration, NIM A 518 (2004) 560 [2] V. Saveliev, The recent development and study of silicon photomultiplier, NIM A 535 (2004) 528 [3] A. N. Otte et al., Prospects of Using Silicon Photomultipliers for the Astroparticle Physics Experiments EUSO and MAGIC, IEEE Trans. Nucl. Sci. 53 (2006) 636 [4] I. Britvitch et al., Avalanche photodiodes now and possible developments, NIM A 535 (2004) 523 [5] K.Yamamoto et al., Newly developed semiconductor detector by Hamamatsu,PD07 proceedings [6] Hamamatsu Photonics, MPPC data sheet [7] C. Piomonte et al., A new Silicon Photomultiplier structure for blue light detection, NIM A 568 (2006) 224-232 [8] F. Corsi et al.,. Modelling a silicon photomultiplier (SiPM) as a signal source for optimum frontend design,nim A 572 (2007) 416-418 [9] H.Otono et al., On the basic mechanism of Pixelaized Photon Detectors, NIM A 50157 9