6 GHz to 26 GHz, GaAs MMIC Fundamental Mixer HMC773A

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1 FEATURES Conversion loss: 9 db typical Local oscillator (LO) to radio frequency (RF) isolation: 37 db typical LO to intermediate frequency (IF) isolation: 37 db typical RF to IF isolation: db typical Input third-order intercept (IP3): dbm typical Input second-order intercept (IP): dbm typical Input power for 1 db compression (P1dB): 1 dbm typical IF bandwidth: dc to 8 GHz Passive: no dc bias required 3 mm 3 mm, 1-terminal ceramic LCC package APPLICATIONS Point to point radios Point to multipoint radios and very small aperture terminals (VSATs) Test equipment and sensors Military end use 6 GHz to 6 GHz, GaAs MMIC Fundamental Mixer FUNCTIONAL BLOCK DIAGRAM LO 1 3 NIC NIC IF NIC Figure RF PACKAGE BASE GENERAL DESCRIPTION The is a general-purpose, double balanced mixer in a leadless, RoHS compliant LCC package that can be used as an upconverter or downconverter from 6 GHz to 6 GHz. This mixer requires no external components or matching circuitry. The provides excellent LO to RF and LO to IF suppression due to optimized balun structures. The mixer operates well with LO drive levels of 13 dbm or above. The eliminates the need for wire bonding, allowing use of surface-mount manufacturing techniques. Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 916, Norwood, MA 6-916, U.S.A. Tel: Analog Devices, Inc. All rights reserved. Technical Support

2 TABLE OF CONTENTS Features... 1 Applications... 1 Functional Block Diagram... 1 General Description... 1 Revision History... Specifications... 3 Electrical Specifications... 3 Absolute Maximum Ratings... 4 Thermal Resistance... 4 ESD Caution... 4 Pin Configuration and Function Descriptions... Interface Schematics... Typical Performance Characteristics... 6 Downconverter, Upper Sideband, IF = MHz... 6 Downconverter, Upper Sideband, IF = 1 MHz... 8 Downconverter, Upper Sideband, IF = 3 MHz... 9 Downconverter, Upper Sideband, IF = 7 MHz... 1 Downconverter, Lower Sideband, IF = MHz Downconverter, Lower Sideband, IF = 1 MHz... 1 Downconverter, Lower Sideband, IF = 3 MHz Downconverter, Lower Sideband, IF = 7 MHz Downconverter, P1dB Performance... Upconverter, Upper Sideband Upconverter, Lower Sideband Noise Figure Performance Spurious Performance Theory of Operation... Applications Information... 1 Typical Application Circuit... 1 Evaluation PCB Information... 1 Outline Dimensions... Ordering Guide... REVISION HISTORY 1/17 Rev. A to Rev. B Changed HE-1-1 to E Throughout Changes to Features Section, Figure 1, and General Description Section... 1 Changes to Noise Figure Parameter, Isolation Parameter, and Input Third-Order Intercept Parameter, Table 1; and Conversion Loss Parameter, Noise Figure Parameter, Isolation Parameter, and Input Third-Order Intercept Parameter, Table... 3 Changes to Table Added Thermal Resistance Section and Table 4; Renumbered Sequentially... 4 Changes to Typical Performance Characteristics Section... 6 Changes to Spurious Performance Section Deleted M N Spurious Outputs Section Added M N Spurious Outputs, IF = MHz Section and M N Spurious Outputs, IF = 1 MHz Section Changes to Theory of Operation Section... Changed Application Circuit and Evaluation Printed Circuit Board (PCB) Section to Typical Application Circuit Section... 1 Changes to Typical Application Circuit Section, Figure 77, Evaluation PCB Information Section, and Table / v..7 to Rev. A This Hittite Microwave Products data sheet has been reformatted to meet the styles and standards of Analog Devices, Inc. Updated Format... Universal Changes to Features... 1 Changes to Table Changes to Figure Changes to Figure Changes to Spurious Performance Section... Added Theory of Operation Section... 1 Added Applications Information Heading... Changes to Figure Updated Outline Dimensions... 3 Changes to Ordering Guide... 3 Rev. B Page of

3 SPECIFICATIONS ELECTRICAL SPECIFICATIONS T A = C, IF = MHz, LO drive = 13 dbm, RF frequency range = 6. GHz to 16. GHz, all measurements performed as a downconverter with the upper sideband selected, unless otherwise noted. Table 1. Parameter Symbol Min Typ Max Unit FREQUENCY RANGE Radio Frequency RF 6 16 GHz Local Oscillator LO 6 16 GHz Intermediate Frequency IF dc 8 GHz CONVERSION LOSS 9 1 db NOISE FIGURE 1 db ISOLATION LO to RF db LO to IF 3 37 db RF to IF 11 db INPUT THIRD-ORDER INTERCEPT IP dbm INPUT SECOND-ORDER INTERCEPT IP 4 dbm INPUT POWER 1 db Compression P1dB 1 dbm RETURN LOSS RF Port 1 db LO Port 1 db T A = C, IF = MHz, LO drive = 13 dbm, RF frequency range = 16. GHz to 6. GHz, all measurements performed as a downconverter with the upper sideband selected, unless otherwise noted. Table. Parameter Symbol Min Typ Max Unit FREQUENCY RANGE Radio Frequency RF 16 6 GHz Local Oscillator LO 16 6 GHz Intermediate Frequency IF dc 8 GHz CONVERSION LOSS 9 14 db NOISE FIGURE 1 db ISOLATION LO to RF db LO to IF 3 37 db RF to IF db INPUT THIRD-ORDER INTERCEPT IP3 16 dbm INPUT SECOND-ORDER INTERCEPT IP dbm INPUT POWER 1 db Compression P1dB 1 dbm RETURN LOSS RF Port 1 db LO Port 1 db Rev. B Page 3 of

4 ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Rating RF Input Power 1 dbm LO Input Power 1 dbm IF Input Power 1 dbm IF Source and Sink Current ma Channel Temperature 17 C Continuous P DISS (T = 8 C) (Derate 4.44 mw/ C 4 mw Above 8 C) Maximum Peak Reflow Temperature (MSL3) 1 6 C Storage Temperature Range 6 C to + C Operating Temperature Range 4 C to Electrostatic Discharge (ESD) Sensitivity Human Body Model (HBM) V (Class ) Field Induced Charged Device Model 1 V (Class C) (FICDM) 1 See the Ordering Guide section. THERMAL RESISTANCE Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Careful attention to PCB thermal design is required. θ JA is the natural convection junction to ambient thermal resistance measured in a one cubic foot sealed enclosure. θ JC is the junction to case thermal resistance. Table 4. Thermal Resistance Package Type θ JA θ JC Unit E C/W 1 See JEDEC standard JESD1- for additional information on optimizing the thermal impedance (PCB with 3 3 vias). ESD CAUTION Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Rev. B Page 4 of

5 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS LO 1 3 NIC IF NIC NIC TOP VIEW (Not to Scale) 9 8 RF PACKAGE BASE NOTES 1. NIC = NOT INTERNALLY CONNECTED. THESE PINS ARE NOT CONNECTED INTERNALLY. HOWEVER, ALL DATA SHOWN HEREIN WAS MEASURED WITH THESE PINS CONNECTED TO RF/DC GROUND EXTERNALLY.. EXPOSED PAD. THE EXPOSED PAD MUST BE CONNECTED TO RF/DC GROUND. Figure. Pin Configuration Table. Pin Function Descriptions Pin No. Mnemonic Description 1, 3, 7, 9, 1, 1 Ground. Connect these pins and package bottom to RF/dc ground. See Figure 3 for the interface schematic. LO Local Oscillator Port. This pin is ac-coupled and matched to Ω. See Figure 4 for the LO interface schematic. 4, 6, 11 NIC Not Internally Connected. These pins are not connected internally. However, all data shown herein was measured with these pins connected to RF/dc ground externally. IF Intermediate Frequency Port. This pin is dc-coupled. For applications not requiring operation to dc, block this pin externally using a series capacitor with a value that passes the necessary IF frequency range. For operation to dc, to prevent device malfunction or failure, this pin must not source or sink more than ma of current. See Figure for the IF interface schematic. 8 RF Radio Frequency Port. This pin is ac-coupled and matched to Ω. See Figure 6 for the RF interface schematic. EP Exposed Pad. The exposed pad must be connected to RF/dc ground. INTERFACE SCHEMATICS Figure 3. Interface IF Figure. IF Interface LO RF Figure 4. LO Interface Figure 6. RF Interface Rev. B Page of

6 TYPICAL PERFORMANCE CHARACTERISTICS DOWNCONVERTER, UPPER SIDEBAND, IF = MHz C C ISOLATION (db) LO TO RF RF TO IF LO TO IF Figure 7. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 1. Isolation vs. RF Frequency 1 1 dbm LO PORT RETURN LOSS (db) C C Figure 8. Conversion Gain vs. RF Frequency at Various LO Drives LO FREQUENCY (GHz) Figure 11. LO Port Return Loss vs. LO Frequency, CONVERSION GAIN, RETURN LOSS (db) 1 1 CONVERSION GAIN IF RETURN LOSS RF PORT RETURN LOSS (db) C C IF FREQUENCY (GHz) Figure 9. Conversion Gain and Return Loss vs. IF Frequency, Figure 1. RF Port Return Loss vs. RF Frequency, LO Frequency = 16 GHz, Rev. B Page 6 of

7 3 + C C dbm Figure 13. Input IP3 vs. RF Frequency at Various Temperatures, Figure. Input IP3 vs. RF Frequency at Various LO Drives C C dbm INPUT IP (dbm) 4 INPUT IP (dbm) Figure 14. Input IP vs. RF Frequency at Various Temperatures, Figure 16. Input IP vs. RF Frequency at Various LO Drives Rev. B Page 7 of

8 DOWNCONVERTER, UPPER SIDEBAND, IF = 1 MHz C C 1 1 dbm Figure 17. Conversion Gain vs. RF Frequency at Various Temperatures, Figure. Conversion Gain vs. RF Frequency at Various LO Drives C C 3 dbm Figure 18. Input IP3 vs. RF Frequency at Various Temperatures, Figure 1. Input IP3 vs. RF Frequency at Various LO Drives C C dbm INPUT IP (dbm) 4 INPUT IP (dbm) Figure 19. Input IP vs. RF Frequency at Various Temperatures, Figure. Input IP vs. RF Frequency at Various LO Drives Rev. B Page 8 of

9 DOWNCONVERTER, UPPER SIDEBAND, IF = 3 MHz C C 1 1 dbm Figure 3. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 6. Conversion Gain vs. RF Frequency at Various LO Drives C C 3 dbm Figure 4. Input IP3 vs. RF Frequency at Various Temperatures, Figure 7. Input IP3 vs. RF Frequency at Various LO Drives C C dbm INPUT IP (dbm) 4 INPUT IP (dbm) Figure. Input IP vs. RF Frequency at Various Temperatures, Figure 8. Input IP vs. RF Frequency at Various LO Drives Rev. B Page 9 of

10 DOWNCONVERTER, UPPER SIDEBAND, IF = 7 MHz C C 1 1 dbm Figure 9. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 31. Conversion Gain vs. RF Frequency at Various LO Drives C C 3 dbm Figure 3. Input IP3 vs. RF Frequency at Various Temperatures, Figure 3. Input IP3 vs. RF Frequency at Various LO Drives Rev. B Page 1 of

11 DOWNCONVERTER, LOWER SIDEBAND, IF = MHZ C C 1 1 dbm Figure 33. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 36. Conversion Gain vs. RF Frequency at Various LO Drives C C dbm Figure 34. Input IP3 vs. RF Frequency at Various Temperatures, Figure 37. Input IP3 vs. RF Frequency at Various LO Drives dbm INPUT IP (dbm) 4 INPUT IP (dbm) C C Figure 3. Input IP vs. RF Frequency at Various Temperatures, Figure 38. Input IP vs. RF Frequency at Various LO Drives Rev. B Page 11 of

12 DOWNCONVERTER, LOWER SIDEBAND, IF = 1 MHz C C 1 1 dbm Figure 39. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 4. Conversion Gain vs. RF Frequency at Various LO Drives C C dbm Figure 4. Input IP3 vs. RF Frequency at Various Temperatures, Figure 43. Input IP3 vs. RF Frequency at Various LO Drives dbm INPUT IP (dbm) 4 INPUT IP (dbm) C C Figure 41. Input IP vs. RF Frequency at Various Temperatures, Figure 44. Input IP vs. RF Frequency at Various LO Drives Rev. B Page 1 of

13 DOWNCONVERTER, LOWER SIDEBAND, IF = 3 MHz C C 1 1 dbm Figure 4. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 48. Conversion Gain vs. RF Frequency at Various LO Drives C C dbm Figure 46. Input IP3 vs. RF Frequency at Various Temperatures, Figure 49. Input IP3 vs. RF Frequency at Various LO Drives C C dbm INPUT IP (dbm) 4 INPUT IP (dbm) Figure 47. Input IP vs. RF Frequency at Various Temperatures, Figure. Input IP vs. RF Frequency at Various LO Drives Rev. B Page 13 of

14 DOWNCONVERTER, LOWER SIDEBAND, IF = 7 MHz C C 1 1 dbm Figure 1. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 3. Conversion Gain vs. RF Frequency at Various LO Drives C C dbm Figure. Input IP3 vs. RF Frequency at Various Temperatures, Figure 4. Input IP3 vs. RF Frequency at Various LO Drives Rev. B Page 14 of

15 DOWNCONVERTER, P1dB PERFORMANCE C C C C INPUT P1dB (dbm) INPUT P1dB (dbm) Figure. Input P1dB vs. RF Frequency at Various Temperatures, IF = MHz,, Upper Sideband Figure 8. Input P1dB vs. RF Frequency at Various Temperatures, IF = MHz,, Lower Sideband C C C C INPUT P1dB (dbm) INPUT P1dB (dbm) Figure 6. Input P1dB vs. RF Frequency at Various Temperatures, IF = 3 MHz,, Upper Sideband Figure 9. Input P1dB vs. RF Frequency at Various Temperatures, IF = 3 MHz,, Lower Sideband C C C C INPUT P1dB (dbm) INPUT P1dB (dbm) Figure 7. Input P1dB vs. RF Frequency at Various Temperatures, IF = 7 MHz,, Upper Sideband Figure 6. Input P1dB vs. RF Frequency at Various Temperatures, IF = 7 MHz,, Lower Sideband Rev. B Page of

16 UPCONVERTER, UPPER SIDEBAND + C C 3 + C C Figure 61. Conversion Gain vs. RF Frequency at Various Temperatures,, IF = MHz Figure 64. Input IP3 vs. RF Frequency at Various Temperatures,, IF = MHz C C C C Figure 6. Conversion Gain vs. RF Frequency at Various Temperatures,, IF = 3 MHz Figure 6. Input IP3 vs. RF Frequency at Various Temperatures,, IF = 3 MHz C C 3 + C C Figure 63. Conversion Gain vs. RF Frequency at Various Temperatures,, IF = 7 MHz Figure 66. Input IP3 vs. RF Frequency at Various Temperatures,, IF = 7 MHz Rev. B Page 16 of

17 UPCONVERTER, LOWER SIDEBAND + C C 3 + C C Figure 67. Conversion Gain vs. RF Frequency at Various Temperatures,, IF = MHz Figure 7. Input IP3 vs. RF Frequency at Various Temperatures,, IF = MHz C C 3 + C C Figure 68. Conversion Gain vs. RF Frequency at Various Temperatures,, IF = 3 MHz Figure 71. Input IP3 vs. RF Frequency at Various Temperatures,, IF = 3 MHz C C 3 + C C Figure 69. Conversion Gain vs. RF Frequency at Various Temperatures,, IF = 7 MHz Figure 7. Input IP3 vs. RF Frequency at Various Temperatures,, IF = 7 MHz Rev. B Page 17 of

18 NOISE FIGURE PERFORMANCE + C C C C NOISE FIGURE (db) 1 NOISE FIGURE (db) Figure 73. Noise Figure vs. RF Frequency at Various Temperatures, Upper Sideband, IF = MHz, (with LO Amplifier in Line with Lab Bench LO Source) Figure 7. Noise Figure vs. RF Frequency at Various Temperatures, Upper Sideband, IF = MHz, (Without LO Amplifier in Line with Lab Bench LO Source) C C C C NOISE FIGURE (db) NOISE FIGURE (db) Figure 74. Noise Figure vs. RF Frequency at Various Temperatures, Lower Sideband, IF = MHz, (with LO Amplifier in Line with Lab Bench LO Source) Figure 76. Noise Figure vs. RF Frequency at Various Temperatures, Lower Sideband, IF = MHz, (Without LO Amplifier in Line with Lab Bench LO Source) Rev. B Page 18 of

19 SPURIOUS PERFORMANCE Mixer spurious products are measured in dbc from the IF output power level. Spurious values are (M RF) (N LO). N/A means not applicable. M N Spurious Outputs, IF = MHz The RF frequency = 9 GHz and RF input power = 1 dbm. The LO frequency = 8. GHz and the LO input power = 13 dbm. M RF N LO N/A The RF frequency = 16 GHz and RF input power = 1 dbm. The LO frequency =. GHz and the LO input power = 13 dbm. M RF N LO N/A N/A N/A N/A N/A N/A N/A The RF frequency = 3 GHz and RF input power = 1 dbm. The LO frequency =. GHz and the LO input power = 13 dbm. M RF N LO N/A N/A N/A N/A N/A N/A N/A 3 N/A N/A N/A N/A N/A N/A M N Spurious Outputs, IF = 1 MHz The RF frequency = 9 GHz and RF input power = 1 dbm. The LO frequency = 8 GHz and the LO input power = 13 dbm. M RF N LO N/A The RF frequency = 16 GHz and RF input power = 1 dbm. The LO frequency = GHz and the LO input power = 13 dbm. M RF N LO N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A The RF frequency = 3 GHz and RF input power = 1 dbm. The LO frequency = GHz and the LO input power = 13 dbm. M RF N LO N/A N/A N/A N/A N/A N/A N/A 3 N/A N/A 4 N/A N/A N/A N/A N/A Rev. B Page 19 of

20 THEORY OF OPERATION The is a general-purpose, double balanced mixer that can be used as an upconverter or a downconverter from 6 GHz to 6 GHZ. When used a downconverter, the downconverts radio frequencies (RF) between 6 GHz and 6 GHz to intermediate frequencies (IF) between dc and 8 GHz. When used as an upconverter, the mixer upconverts intermediate frequencies between dc and 8 GHz to radio frequencies between 6 GHz and 6 GHz. The mixer performs well with LO drives of 13 dbm or above, and it provides excellent LO to RF and LO to IF suppression due to optimized balun structures. The ceramic LCC package eliminates the need for wire bonding and is compatible with high volume, surface-mount manufacturing techniques. Rev. B Page of

21 APPLICATIONS INFORMATION TYPICAL APPLICATION CIRCUIT Figure 77 shows the typical application circuit for the. The is a passive device and does not require any external components. The LO and RF pins are internally ac-coupled. When IF operation is not required until dc, it is recommended to use an ac-coupled capacitor at the IF port. When IF operation to dc is required, do not exceed the IF source and sink current rating specified in the Absolute Maximum Ratings section. EVALUATION PCB INFORMATION RF circuit design techniques must be implemented for the evaluation board PCB shown in Figure 78. Signal lines must have Ω impedance, and the package ground leads and exposed pad must be connected directly to the ground plane, similar to that shown in Figure 78. Use a sufficient number of via holes to connect the top and bottom ground planes. The evaluation circuit board shown in Figure 78 is available from Analog Devices, Inc., upon request. LO IF 1 LO RF IF Figure 77. Typical Application Circuit 9 RF Table 6. Bill of Materials for Evaluation PCB EV1LC3B Item Description J1, J SRI SMA connector. J3 Johnson SMA connector. U1 LC3B mixer. PCB 1 4 evaluation PCB. Circuit board material: Rogers is the bare PCB. Reference EV1LC3B when ordering the evaluation PCB assembly. Figure 78. Evaluation PCB Rev. B Page 1 of

22 OUTLINE DIMENSIONS PIN 1 INDICATOR SQ PIN 1 (.3.3). BSC 9 7 EXPOSED PAD SQ PKG-.9 MAX SEATING PLANE TOP VIEW.3 BSC BOTTOM VIEW 1. BSC.1 BSC FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET A ORDERING GUIDE Model Temperature Figure Terminal Ceramic Leadless Chip Carrier [LCC] (E-1-1) Dimensions shown in millimeters MSL Rating 1 Description Package Option Branding 3 LC3B 4 C to MSL3 1-Terminal Ceramic Leadless Chip Carrier [LCC] E-1-1 H773A XXXX LC3BTR 4 C to MSL3 1-Terminal Ceramic Leadless Chip Carrier [LCC] E-1-1 H773A XXXX EV1LC3B Evaluation PCB Assembly 1 The maximum peak reflow temperature is 6 C (see the Absolute Maximum Ratings section). LC3B and LC3BTR body package material is alumina ceramic and the lead finish is gold over nickel. 3 LC3B and LC3BTR 4-digit lot number is represented by XXXX. 17 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D /17(B) Rev. B Page of

10 GHz to 26 GHz, GaAs, MMIC, Double Balanced Mixer HMC260ALC3B

10 GHz to 26 GHz, GaAs, MMIC, Double Balanced Mixer HMC260ALC3B Data Sheet FEATURES Passive; no dc bias required Conversion loss 8 db typical for 1 GHz to 18 GHz 9 db typical for 18 GHz to 26 GHz LO to RF isolation: 4 db Input IP3: 19 dbm typical for 18 GHz to 26 GHz