Customised Pack Sizes / Qtys. Support for all industry recognised supply formats: o o o. Waffle Pack Gel Pak Tape & Reel

Transcription

1 Design Assistance Assembly Assistance Die handling cnsultancy Hi-Rel die qualificatin Ht & Cld die prbing Electrical test & trimming Custmised Pack Sizes / Qtys Supprt fr all industry recgnised supply frmats: Waffle Pack Gel Pak Tape & Reel Onsite strage, stckhlding & scheduling 1% Visual Inspectin MIL-STD 883 Cnditin A MIL-STD 883 Cnditin A On-site failure analysis Bespke 2 Hur mnitred strage systems fr secure lng term prduct supprt On-site failure analysis Cntact baredie@micrss.cm Fr price, delivery and t place rders

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4 v2.17 MIXER, 7-1 GHz Typical Applicatins The is ideal fr: Micrwave Radi Military & Space Cmmunicatins, Radar & EW Features High LO/RF Islatin: 8 db Passive Duble Balanced Tplgy Lw Cnversin Lss: 7 db Wide IF Bandwidth: DC - 5 GHz Rbust 1,V ESD, Class 1C Small Size:.83 x 1.12 x.1 mm Functinal Diagram General Descriptin Electrical Specificatins, T A = +25 C, IF= 1 MHz, LO= +13 dbm* The is a passive duble balanced mixer that can be used as an upcnverter r dwncnverter between 7 and 1 GHz. The miniature mnlithic mixer is fabricated in a GaAs MESFET prcess, and requires n external cmpnents r matching circuitry. The perates with LO drive levels as lw as +9 dbm and prvides excellent LO t RF and LO t IF islatin due t ptimized balun structures. Measurements were made with the chip munted int in a 5 hm test fi xture and includes the parasitic effects f wire bnd assembly. Cnnectins were made with a 1 mil wire bnd with minimal length (<12 mil). Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range, RF & LO GHz Frequency Range, IF DC - 5 DC - 5 GHz Cnversin Lss db Nise Figure (SSB) db LO t RF Islatin db LO t IF Islatin db RF t IF Islatin db IP3 (Input) dbm IP2 (Input) 8 8 dbm 1 db Gain Cmpressin (Input) dbm *Unless therwise nted, all measurements perfrmed as dwncnverter, IF= 1 MHz Alpha Rad, Chelmsfrd, MA 182 Phne: Fax:

5 Cnversin Gain vs. LO = +13 dbm v2.17 LO = +13 dbm MIXER, 7-1 GHz CONVERSION GAIN (db) C +85C 5C ISOLATION (db) RF/IF LO/RF LO/IF Cnversin Gain vs. LO Drive CONVERSION GAIN (db) IF LO = +13 dbm RESPONSE (db) dbm +11 dbm +13 dbm +15 dbm IF Return Lss Cnversin Gain Return LO = +13 dbm RETURN LOSS (db) Upcnverter Perfrmance Cnversin Gain vs. LO Drive CONVERSION GAIN (db) dbm +11 dbm +13 dbm +15 dbm RF LO Alpha Rad, Chelmsfrd, MA 182 Phne: Fax:

6 v2.17 MIXER, 7-1 GHz Input IP3 vs. LO Drive * 3 Input IP3 vs. LO = +13 dbm * IP3 (dbm) dbm +11 dbm +13 dbm +15 dbm IP3 (dbm) C +85C -C Input IP2 vs. LO Drive * IP2 (dbm) dbm +11 dbm +13 dbm +15 dbm Input P1dB vs. LO = +13 dbm P1dB (dbm) C +85C -C Input IP2 vs. LO = +13 dbm * IP2 (dbm) C +85C -C MxN Spurius Outputs nlo mrf xx xx RF = dbm LO = dbm All values in dbc belw the IF utput pwer level. * Tw-tne input pwer = dbm each tne, 1 MHz spacing Alpha Rad, Chelmsfrd, MA 182 Phne: Fax:

7 v2.17 MIXER, 7-1 GHz Abslute Maximum Ratings RF / IF Input +25 dbm LO Drive +25 dbm Channel Temperature 15 C Cntinuus Pdiss (T = 85 C) (derate.9 mw/ C abve 85 C) 266 mw Thermal Resistance (channel t die bttm) 2 C/W Strage Temperature -65 t +15 C Operating Temperature 5 t +85 C ESD Sensitivity (HBM) Class 1C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Infrmatin [1] Standard Alternate WP-7 (Waffle Pack) [2] [1] Refer t the Packaging Infrmatin sectin fr die packaging dimensins. [2] Fr alternate packaging infrmatin cntact Hittite Micrwave Crpratin. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS.. 3. TYPICAL BOND PAD IS. SQUARE.. BOND PAD SPACING CENTER TO CENTER IS BACKSIDE METALLIZATION: GOLD. 6. BOND PAD METALLIZATION: GOLD. 7. BACKSIDE METAL IS GROUND. 8. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 9. THIS DIE IS DESIGNED FOR PICK-UP WITH VACUUM (EDGE) COLLET TOOLS. TO PRECLUDE THE RISK OF PERMANENT DAMAGE, NO CONTACT TO THE DIE SURFACE IS ALLOWED WITHIN THIS RECTANGULAR AREA. 2 Alpha Rad, Chelmsfrd, MA 182 Phne: Fax:

8 v2.17 MIXER, 7-1 GHz Pad Descriptins Pad Number Functin Descriptin Interface Schematic 1 LO This pad is DC cupled and matched t 5 Ohms.. 2 RF This pad is DC cupled and matched t 5 Ohms.. 3 IF GND Assembly Drawing This pad is DC cupled. Fr applicatins nt requiring peratin t DC, this prt shuld be DC blcked externally using a series capacitr whse value has been chsen t pass the necessary IF frequency range. Fr peratin t DC, this pin must nt surce r sink mre than 2 ma f current r part nn-functin and pssible part failure will result. The backside f the die must be cnnected t RF grund Alpha Rad, Chelmsfrd, MA 182 Phne: Fax:

9 v2.17 MIXER, 7-1 GHz Munting & Bnding Techniques fr Millimeterwave GaAs MMICs The die shuld be attached directly t the grund plane eutectically r with cnductive epxy (see HMC general Handling, Munting, Bnding Nte). 5 Ohm Micrstrip transmissin lines n.127mm (5 mil) thick alumina thin fi lm substrates are recmmended fr bringing RF t and frm the chip (Figure 1). If.25mm (1 mil) thick alumina thin fi lm substrates must be used, the die shuld be raised.15mm (6 mils) s that the surface f the die is cplanar with the surface f the substrate. One way t accmplish this is t attach the.12mm ( mil) thick die t a.15mm (6 mil) thick mlybdenum heat spreader (mly-tab) which is then attached t the grund plane (Figure 2). Micrstrip substrates shuld be brught as clse t the die as pssible in rder t minimize ribbn bnd length. Typical die-t-substrate spacing is.76mm (3 mils). Gld ribbn f.75 mm (3 mil) width and minimal length <.31 mm (<12 mils) is recmmended t minimize inductance n RF, LO & IF prts. Handling Precautins Fllw these precautins t avid permanent damage. Strage: All bare die are placed in either Waffle r Gel based ESD prtective cntainers, and then sealed in an ESD prtective bag fr shipment. Once the sealed ESD prtective bag has been pened, all die shuld be stred in a dry nitrgen envirnment. Cleanliness: Handle the chips in a clean envirnment. DO NOT attempt t clean the chip using liquid cleaning systems. Static Sensitivity: Fllw ESD precautins t prtect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables t minimize inductive pick-up. General Handling: Handle the chip alng the edges with a vacuum cllet r with a sharp pair f bent tweezers. The surface f the chip has fragile air bridges and shuld nt be tuched with vacuum cllet, tweezers, r fi ngers. Munting The chip is back-metallized and can be die munted with AuSn eutectic prefrms r with electrically cnductive epxy. The munting surface shuld be clean and fl at. Eutectic Die Attach: A 8/2 gld tin prefrm is recmmended with a wrk surface temperature f 255 C and a tl temperature f 265 C. When ht 9/1 nitrgen/hydrgen gas is applied, tl tip temperature shuld be 29 C. DO NOT expse the chip t a temperature greater than 32 C fr mre than 2 secnds. N mre than 3 secnds f scrubbing shuld be required fr attachment. Epxy Die Attach: Apply a minimum amunt f epxy t the munting surface s that a thin epxy fi llet is bserved arund the perimeter f the chip nce it is placed int psitin. Cure epxy per the manufacturer s schedule. Wire Bnding.12mm (. ) Thick GaAs MMIC.76mm (.3 ) RF Grund Plane 3 mil Ribbn Bnd.127mm (.5 ) Thick Alumina Thin Film Substrate Figure 1..12mm (. ) Thick GaAs MMIC.76mm (.3 ).15mm (.5 ) Thick Mly Tab RF Grund Plane 3 mil Ribbn Bnd.25mm (.1 ) Thick Alumina Thin Film Substrate Figure 2. Ball r wedge bnd with.25 mm (1 mil) diameter pure gld wire is recmmended. Thermsnic wirebnding with a nminal stage temperature f 15 C and a ball bnding frce f t 5 grams r wedge bnding frce f 18 t 22 grams is recmmended. Use the minimum level f ultrasnic energy t achieve reliable wirebnds. Wirebnds shuld be started n the chip and terminated n the package r substrate. All bnds shuld be as shrt as pssible <.31 mm (12 mils). 2 Alpha Rad, Chelmsfrd, MA 182 Phne: Fax: