TGA2239. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information. Part No.

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1 Product Description Qorvo s is a Ku-band, high power MMIC amplifier fabricated on Qorvo s production.1 um GaN on SiC process. The operates from GHz and provides a superior combination of power, gain and efficiency by achieving greater than 3 W of saturated output power with 24. db of large signal gain and greater than 32 % power-added efficiency. This superior performance provides system designers the flexibility to improve system performance while reducing size and cost. The is fully matched to Ω with integrated DC blocking capacitors on RF ports simplifying system integration. It is ideally suited for military and commercial Ku-band radar and satellite communication systems. Lead-free and RoHS compliant. Evaluation boards are available upon request. Functional Block Diagram Product Features Frequency Range: GHz PSAT : >. PIN = 21 dbm PAE: >32 PIN = 21 dbm Large Signal Gain: >24. db Small Signal Gain: 29. db Bias: VD = +, IDQ = 9 ma, VG = 2.7 V Typical Process Technology QGaN1 Chip Dimensions:. x. x.1 mm Performance Under CW Operation Applications Satellite Communications Data Link Radar Ordering Information Part No. ECCN Description 3A1.b.2.b GHz 3 W GaN Power Amplifier Rev. A - 1 of 1 -

2 Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID1-2) Drain Current (ID3) Gate Current TCH = 2 C Gate Current TCH = 2 C Power Dissipation (PDISS), 8 C, CW Input Power (PIN), CW, Ω, VD = +, IDQ = 9 ma, 8 C Value / Range 29. V to V 2.8 A 4.3 A to 14. ma 12. to 38 ma 117 W 33 dbm Input Power (PIN), CW, VSWR 3:1, VD = +, IDQ = 9 ma, 8 C dbm Channel Temperature (TCH) 27 C Mounting Temperature ( seconds) 32 C Storage Temperature to 1 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. PIN Recommended Operating Conditions Parameter Drain Voltage (VD) Drain Current (IDQ) Gate Voltage (VG) Value / Range + 9 ma (Total) 2.7 V (Typ.) Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range GHz Small Signal Gain 29. db Input Return Loss >13 db Output Return Loss >7. db Power Gain (PIN = 21 dbm) >24. db Output Power (PIN = 21 dbm) >. dbm Power Added Efficiency (PIN = 21 dbm) >32 % Small Signal Gain Temperature Coefficient.9 db/ C Output Power Temperature Coefficient.28 db/ C Test conditions unless otherwise noted: C, VD = +, IDQ = 9 ma, VG = 2.7 V Typical, CW Rev. A - 2 of 1 -

3 P DISS (W) Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1) Tbase = 8 C 1.2 ºC/W Channel Temperature (TCH) (No RF drive) VD = +, IDQ = 9 ma 11 C Median Lifetime (TM) PDISS = 19.8 W 4. x 1^14 Hrs Thermal Resistance (θjc) (1) Tbase = 8 C, CW, VD = +, IDQ = 9 ma 1.13 ºC/W Channel Temperature (TCH) (Under RF drive) Freq = 1. GHz, VD = +, ID_Drive = A, 174 C Median Lifetime (TM) POUT = 24 dbm, POUT =.2 dbm, PDISS = 79 W 3.4 x 1^1 Hrs Notes: 1. Thermal resistance measured to back of carrier plate. MMIC mounted on 4 mils CuMo (8/2) carrier using 1. mil AuSn. Median Lifetime Test Conditions: VD = +28 V; Failure Criteria = 1 % reduction in ID_MAX P DISS vs. Frequency vs. Temperature C, P IN = 18 dbm C, P IN = 21 dbm 8 C, P IN = 24 dbm 3 Rev. A - 3 of 1 -

4 S11 (db) S22 (db) S21 (db) S21 (db) S21 (db) Typical Performance Small Signal Gain vs. Frequency vs. Temperature C 18 C 8 C 1 12 Gain vs. Frequency vs. Drain Voltage 32 Temp = C V 22 2 I DQ = 9 ma Temp = C Gain vs. Frequency vs. Current ma ma V D = Input Return Loss vs. Frequency vs. Temp. C C 8 C Output Return Loss vs. Frequency vs. Temp. C C 8 C Rev. A - 4 of 1 -

5 P OUT (dbm) P OUT (dbm) P OUT (dbm) Output Power (dbm) Output Power (dbm) Typical Performance (CW Operation) 47 4 Output Power vs. Frequency vs. Voltage 47 4 Output Power vs. Frequency vs. Temp V I DQ = 9 ma P IN = 21 dbm C, P IN = 18 dbm C, P IN = 21 dbm 8 C, P IN = 24 dbm Output Power vs. Input Power vs. Voltage Freq. = 14. GHz 2 V I DQ = 9 ma Output Power vs. Frequency vs. P IN 18 dbm 19 dbm 2 dbm 21 dbm 24 dbm Output Power vs. Input Power vs. Freq GHz 14. GHz 1. GHz Rev. A - of 1 -

6 PAE (%) PAE (%) PAE (%) PAE (%) PAE (%) Typical Performance (CW Operation) PAE vs. Frequency vs. Drain Voltage PAE vs. Frequency vs. Temperature V 2 C, P IN = 18 dbm C, P IN = 21 dbm 8 C, P IN = 24 dbm 1 I DQ = 9 ma P IN = 1 21 dbm PAE vs. Input Power vs. Drain Voltage I DQ = 9 ma 2 V Freq. = 14. GHz PAE vs. Frequency vs. P IN 18 dbm 19 dbm 2 dbm 21 dbm 24 dbm PAE vs. Input Power vs. Frequency 13.7 GHz 14. GHz 1. GHz Rev. A - of 1 -

7 Drain Current (A) Gate Current (ma) Drain Current (A) Gate Current (ma) Drain Current (A) Gate Current (ma) Typical Performance (CW Operation) Drain Current vs. Freq. vs. Drain Voltage I DQ = 9 ma 1. Gate Current vs. Freq. vs. Drain Voltage I DQ = 9 ma P IN = 21 dbm V P IN = 21 dbm V -1. Drain Current vs. Frequency vs. Temp. 4 Gate Current vs. Frequency vs. Temp. 4 3 C, P IN = 18 dbm C, P IN = 21 dbm 8 C, P IN = 24 dbm C, P IN = 18 dbm C, P IN = 21 dbm 8 C, P IN = 24 dbm Drain Current vs. Input Power vs. Voltage I DQ = 9 ma Gate Current vs. Input Power vs. Voltage I DQ = 9 ma V 2 V Rev. A - 7 of 1 -

8 Power Gain (db) Power Gain (db) Power Gain (db) Power Gain (db) Drain Current (A) Gate Current (ma) Typical Performance (CW Operation) Drain Current vs. Input Power vs. Freq. Gate Current vs. Input Power vs. Freq GHz 14. GHz 1. GHz 13.7 GHz 14. GHz 1. GHz Power Gain vs. Frequency vs. Drain Voltage 2 V I DQ = 9 ma P IN = 21 dbm Power Gain vs. Frequency vs. P IN 18 dbm 19 dbm 2 dbm 21 dbm 24 dbm Power Gain vs. Input Power vs. Freq GHz 14. GHz 1. GHz Power Gain vs. Frequency vs. Temperature C, P IN = 18 dbm C, P IN = 21 dbm 8 C, P IN = 24 dbm 9 Rev. A - 8 of 1 -

9 IM3 (dbc) IM (dbc) IM3 (dbc) IM (dbc) IM3 (dbc) IM (dbc) Typical Performance Linearity - -1 IM3 vs. Output Power. vs. Frequency Temp. = C 1 MHz Tone Spacing GHz GHz GHz GHz GHz GHz -1-2 IM vs. Output Power. vs. Frequency Temp. = C 1 MHz Tone Spacing GHz GHz GHz GHz GHz GHz IM3 vs. Output Power. vs. Voltage Temp. = C 1 MHz I DQ = Tone 9 Spacing ma 2 V GHz -1-2 IM vs. Output Power. vs. Voltage Temp. = C I DQ = 9 ma -2 Freq. = 14. GHz, 1 MHz Tone Spacing V GHz - Freq. = 14. GHz, 1 MHz Tone Spacing IM3 vs. Output Power. vs. Temperature -1-2 IM vs. Output Power. vs. Temperature -2 C C GHz 8 C Freq. = 14. GHz, 1 MHz Tone Spacing C C 8 C - Freq. = 14. GHz, 1 MHz Tone Spacing Rev. A - 9 of 1 -

10 2 nd Harmonic (dbc) 2 nd Harmonic (dbc) 2 nd Harmonic (dbc) 2 nd Harmonic (dbc) IM3 (dbc) IM (dbc) Typical Performance Linearity - -1 IM3 vs. Output Power. vs. Current Temp. = C 9 ma ma V D = -1-2 IM vs. Output Power. vs. Current Temp. = C 9 ma ma V D = -2 Freq. = 14. GHz, 1 MHz Tone Spacing Freq. = 14. GHz, 1 MHz Tone Spacing nd Harmonic vs. Output Power. vs. Freq. Temp. = C -1 2 nd Harmonic vs. Output Power. vs.temp. Freq. = 14. GHz GHz 14. GHz 1. GHz - - C C 8 C Output Power (dbm) Output Power (dbm) -1 2 nd Harmonic vs. Output Power. vs. Voltage Temp. = C Freq. = 14. GHz -1 2 nd Harmonic vs. Output Power. vs. I DQ Temp. = C Freq. = 14. GHz V - I DQ = 9 ma Output Power (dbm) - V D = - ma 9 ma Output Power (dbm) Rev. A - 1 of 1 -

11 Application Circuit C11.1 uf C7 1 uf C12.1 uf C8 1 uf C1 1 pf R.1 Ohms C2 1 pf C3 1 pf R.1 Ohms VG = -2.7 V Typical 1 J1 RF In J2 RF Out VD =, IDQ = 9 ma C4 1 pf R7.1 Ohms C 1 pf C 1 pf R8.1 Ohms C13.1 uf C9 1 uf C14.1 uf C1 1 uf Notes: VG & VD must be biased from both sides top and bottom. Bias Up Procedure 1. Set ID limit to A, IG limit to ma 2. Set VG to V 3. Set VD + 4. Adjust VG until IDQ = 9 ma (VG ~ 2.7 V Typ.). Apply RF signal Bias Down Procedure 1. Turn off RF supply 2. Reduce VG to V; ensure IDQ is approx. ma 3. Set VD to V 4. Turn off VD supply. Turn off VG supply Rev. A - 11 of 1 -

12 Evaluation Board (EVB) Layout Assembly Notes: 1. VG & VD must be biased from both sides top and bottom. Bill of Materials Reference Des. Value Description Manuf. Part Number C1 C 1 pf SLC, + V Various C7 C1 1 uf Cap, 12, + V, 2 %, XR Various C11, C14.1uF Cap, 42, + V, 1 %, X7R Various R1 R4 Ω Res, 42, %, SMD Various R R8.1 Ω Res, 42, %, ROHS Various Rev. A - 12 of 1 -

13 Mechanical Drawing Unit: millimeters Thickness:.1 Die x, y size tolerance: +/-. Chip edge to bond pad dimensions are shown to center of pad Ground is backside of die Bond Pad Description Pad No. Symbol Pad Size Description 1 RF In.11 x.2 RF Input; matched to Ω, DC blocked 2, 1 VG x.11 Gate voltage 1, bias network is required; see Application Circuit on page 11 as an example. 3, 9 VG3.11 x.11 Gate voltage 3, bias network is required; see Application Circuit on page 11 as an example. 4, 8 VD1-2.2 x.143 Drain voltage 1, bias network is required; see Application Circuit on page 11 as an example., 7 VD3.3 x.11 Drain voltage 3, bias network is required; see Application Circuit on page 11 as an example. RF Out.11 x.2 RF Output; matched to Ω, DC blocked Rev. A - 13 of 1 -

14 Assembly Notes Component placement and adhesive attachment assembly notes: Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment (i.e. epoxy) can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Reflow process assembly notes: Use AuSn (8/2) solder and limit exposure to temperatures above C to 3 4 minutes, maximum. An alloy station or conveyor furnace with reducing atmosphere should be used. Do not use any kind of flux. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes: Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonic are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with.7-inch wire. Rev. A - 14 of 1 -

15 Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) TBD JEDEC Standard JESD22 A114 Caution! ESD-Sensitive Device Solderability Compatible with the latest version of J-STD-2, Lead free solder, 2 C RoHS Compliance This product is compliant with the 211//EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 21/83/EU. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C1H12Br42) Free Pb PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo: Web: Tel: info-sales@qorvo.com Fax: For technical questions and application information: info-products@qorvo.com Important Notice The information contained herein is believed to be reliable. Qorvo makes no warranties regarding the information contained herein. Qorvo assumes no responsibility or liability whatsoever for any of the information contained herein. Qorvo assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Rev. A - 1 of 1 -