Conference. Tuesday-Friday, August Exhibition. Wednesday-Friday, August Tutorials & Business Forum. Monday, August 27.

Transcription

1 7th International Meeting on Information Display Final Program IMID th International Meeting on Information Display 7th International Meeting on Information Display Final Program Conference Tuesday-Friday, August Exhibition Wednesday-Friday, August Tutorials & Business Forum Monday, August 27 Workshops Friday, August 31 FPD Standardization Forum Tutorials, Business Forum, Conference, and Workshops will feature more than 500 presentations, which include two keynote addresses, 100 invited presentations, 350 Contributed presentations, 17 tutorial presentation, 20 workshops presentation and 16 business forum papers. The technical conference will proceed in six parallel sessions for four days and the total number of sessions is 56. The poster sessions is going to be person-toperson discussion forum on cutting-edge display technologies. Author interview sessions will be held at each afternoon during the conference. Keynote Address 1 Wednesday, August 29 Liquid Crystals-A Key Component in LCDs August 27-31, 2007 Mr. Walter Zywottek (Merck KGaA, The Executive Board Daegu Exhibition & Convention Center (EXCO), Daegu, Korea Member of Merck KGaA, Germany) Tuesday, August 28, 09:20~10:00, Convention Hall II ORGANIZED BY Keynote Address 2 The Korean Information Display Society (KIDS) Future Trends in Information Displays Society for Information Display (SID) United States Display Consortium (USDC) DisplaySearch Dr. Hee-Gook Lee (LG Electronics, Inc., President and Chief Technology Officer, Korea) Tuesday, August 28, 10:00~10:40, Convention Hall II 7th International Meeting on Information Display

2 7th International Meeting on Information Display IMID 2007 Program at a Glance DATE TIME Room 409 Room 315 Room 306 Room 314 Room 505 Room 504 Convention Hall II (MON) 09:00-18:30 IMID BUSINESS FORUM 2007 Tutorial 2 PDP Discharge and Driving Waveform Tutorial 3 Digital Color and Display Electronics Tutorial 4 Understanding OLED Fundamentals: From Basic Principles to Devices Tutorial 1 Devices for Active Matrix Displays 18:30-22:00 Welcome Reception (EXCO 5th Floor Lobby) Opening Ceremony (Convention Hall II) 09:20-10:00 Keynote 1: Liquid Crystals - A Key Component in LCDs Mr. Walter Zywottek (Merck KGaA, Germany) (Convention Hall II) 10:00-10:40 Keynote 2: Future Trends in Information Displays Dr. Hee-Gook Lee (LG Electronics, Inc., Korea) (Convention Hall II) (TUE) 10:40-11:00 11:00-12:30 12:30-14:00 14:00-15:30 15:30-15:50 15:50-17:10 1. Crystallization Technologies 7. Optical Properties of LCs and Photonic Applications 13. LC Materials and Flexible Displays Coffee Break 2. PDP Discharge Physics 3. AMOLED TV 4. Flexible AMOLED 5. Optical Films for LCD Application Lunch 8. PDP Efficiency 9. AMOLED TFT 10. OTFT I 11. OTFT Materials Technology 12. Novel Manufacturing Technology Coffee Break 14. PDP Protecting Layer 15. White AMOLED 16. Si based TFT for Flexible Display 17. Materials for Flexible Display & BLU 6. Advanced Manufacturing Equipment 18. Display Measuring & Analysis System (WED) 17:20-18:40 09:00-10:30 10:30-10:50 10:50-12:20 12:20-14:00 14:00-16:00 16:00-16:20 16:20-17:50 KIDS Annual Meeting 19. LC Technologies 20. PDP Materials and Process 21. OLED Process 22. E-paper/Flexible LCD 25. LCD Mode 26. Display Electronics I 27. OLED Materials Coffee Break 28. Flexible Substrate and Passivation Lunch FPD Standardization Forum Coffee Break 23. BLU Components & System Technology 29. New Materials and Processing Technology for FPD 31. New LCD Modes 32. Display Electronics II 33. OLED Device Structure FPD Standardization Forum 34. Human Factor I Author Interview 24. Film & Patterning Process Technology 30. Driving Methods & System 35. Emission Material & Applications Poster Session I 17:55-19:00 Author Interview 19:30-21:00 09:00-10:30 10:30-10: Poly-Si TFTs 37. Display Electronics III 38. OLED Device I Banquet (Inter-Burgo Hotel) 39. Fabrication Process for Flexible Display I Coffee Break 40. Human Factor II 41. Projection Displays 10:50-12: a-si TFT Technologies 43. PDP Driving 44. OLED Interface & Lifetime 45. OTFT II 46. 3D Display & System I 47. Novel Displays I (THU) 12:20-14:00 14:00-16:00 Lunch Poster Session II 16:00-16:20 16:20-17: Various TFT Technologies 49. PDP Image Quality 50. OLED Device II Coffee Break 51. Fabrication Process for Flexible Display II 52. 3D Display & System II 53. Novel Displays II 17:50-18:50 Author Interview (FRI) 09:00-19: TFTs for Flexible Displays Workshop 1 Printable & Flexible Displays Workshop 2 Full-HD PDP Technical Issues 55. AMOLED Backlane Technologies Workshop 3 Breakthrough Technology for Successful AMOLED Business 56. 3D Display & System III Author Interview 1. Active-Matrix Devices 2. Liquid Crystal Technologies and Other Non-emissive Displays 3. Plasma Display Panels 4. Organic Light-Emitting Diode (OLED) Displays 5. Flexible Displays/Plastic Electronics 6. Field Emission Displays & 7. Ultra Slim CRTs 8. Projection Displays 9. Display Electronics, Systems and Applications 10. Applied Vision/ Human Factors/ 3D Displays 11. Display Materials and Components 12. Display Manufacturing Measuring Equipment 13. Novel and Future Displays

3 7th International Meeting on Information Display CONTENTS WELCOME MESSAGE... 4 HIGHLIGHTS... 6 GENERAL INFORMATION August 27, Monday Tutorial 1 : Devices for Active Matrix Displays Tutorial 2 : PDP Discharge and Driving Waveform Tutorial 3 : Digital Color and Display Electronics Tutorial 4 : Understanding OLED Fundamentals: From Basic Principles to Devices IMID BUSINESS FORUM August 28, Tuesday Opening Ceremony Keynote Addresses Technical Program 1. Crystallization Technologies PDP Discharge Physics AMOLED TV Flexible AMOLED Optical Films for LCD Application Advanced Manufacturing Equipment Optical Properties of LCs and Photonic Applications PDP Efficiency AMOLED TFT OTFT I OTFT Materials Technology Novel Manufacturing Technology LC Materials and Flexible Displays PDP Protecting Layer White AMOLED Si based TFT for Flexible Display August 27-31,

4 17. Materials for Flexible Display & BLU Display Measuring & Analysis System August 29, Wednesday 19. LC Technologies PDP Materials and Manufacturing Process OLED Process E-paper/Flexible LCD BLU Components & System Technology Film & Patterning Process Technology LCD Mode Display Electronics I OLED Materials Flexible Substrate and Passivation New Materials and Processing Technology for FPD Driving Methods & System FPD Standardization Forum Poster Session I New LCD Modes Display Electronics II OLED Device Structure Human Factor I Emission Material & Applications Various TFT Technologies PDP Image Quality OLED Device II Fabrication Process for Flexible Display II D Display & System II Novel Displays II August 31, Friday 54. TFTs for Flexible Displays AMOLED Backlane Technologies D Display & System III Workshop 1 : Printable & Flexible Displays Workshop 2 : Full-HD PDP Technical Issues Workshop 3 : Breakthrough Technology for Successful AMOLED Business IMID 2007 Committee IMID 2007 Exhibitors Floor Plan IMID 2007 Invited Speakers August 30, Thursday 36. Poly-Si TFTs Display Electronics III OLED Device Fabrication Process for Flexible Display I Human Factor II Projection Displays a-si TFT Technologies PDP Driving OLED Interface & Lifetime OTFT II D Display & System I Novel Displays I Poster Session II IMID 2007 August 27-31,

5 7th International Meeting on Information Display WELCOME TO IMID 2007 Welcome to IMID 2007! I would like to extend my warmest welcome to keynote and invited speakers, participants, and guests to International Meeting on Information Display (IMID) IMID has been serving as a premiere gathering place for the people from information display industries, universities, and research laboratories from all over the world. This year s event was organized by a well-coordinated teamwork of various organizations which include KIDS (Korean Information Display Society), SID (Society for Information Display), USDC (United States Display Consortium), and DisplaySearch. With their hard work, IMID 2007 will offer an excellent opportunity for learning state-of-the-art advances in information display technologies, basic sciences of information displays, and business strategies. IMID 2007 consists of three-day technical program, oneday tutorial and business forum, and one-day workshop in parallel with a major exhibition on information displays. At the technical program, two keynote speakers, Mr. Walter Zywottek (the executive board member of Merck KGaA) and Dr. Hee-Gook Lee (President and Chief Technology Officer of LG Electronics) will present their visions on future of information displays. For the technical program, 460 excellent papers were selected from a large number of contributed papers. Those papers along with 100 invited papers will be presented at 56 oral sessions and 2 poster sessions. The tutorial session will provide basic understandings for new-comers on major information display technologies and the business forum, co-organized with DisplaySearch, will provide a review on the status of current business situation and future trends by renowned leaders from display industries. The workshop is to touch on the hot issues of AMD, PDP, and OLED and will provide comprehensive analyses on the issues from leaders of the fields. At the Exhibition, 144 companies from 7 countries will exhibit their cutting-edge display products, materials, and equipments. With these contents, we, the organizing committee members, are happy to have you at IMID Finally, I hope you enjoy our IMID 2007 program and explore Daegu Metropolitan City. Daegu (meaning, great hill) is the third largest city in Korea and a center of Korean information display industry. In addition, there are many historic, cultural and natural attractions nearby Daegu. As the slogan of the Daegu city Colorful Daegu, you will enjoy colorful information display technologies during the IMID 2007 as well as colorful culture of Daegu. We look forward to your contribution and participation. Ki-Woong Whang Chairman of IMID IMID 2007 August 27-31,

6 7th International Meeting on Information Display HIGHLIGHTS WORKSHOPS Friday, August 31, 14:00~18:00 Printable & Flexible Displays - Printing Technologies and Printable Devices - Display Modes for All Organic Displays IMID 2007 CONFERENCE Tutorials, Business Forum, Conference, and Workshops will feature more than 500 presentations, which include two keynote addresses, 100 invited presentations, 356 contributed presentations, 17 tutorial presentation, 20 workshops presentation and 16 business forum papers. The technical conference will proceed in six parallel sessions for four days and the total number of sessions is 56. The poster sessions on Wednesday (Aug. 29) and Thursday (Aug. 30) afternoon is going to be person-to-person discussion forum on cutting-edge display technologies. Author interview sessions will be held at each afternoon during the conference. OPENING CEREMONY Tuesday, August 28, 09:00~09:20, Convention Hall II KEYNOTE ADDRESSES Keynote I : Liquid Crystals-A Key Component in LCDs PDP OLED - See page 140 for full program IMID BUSINESS FORUM 2007 IMID Business Forum 2007 which was co-organized by DisplaySearch Korea and The Korea Information Display Society (KIDS) will take place on August 27, 2007 at EXCO. Attendees will get accurate market analysis and future plans from speakers of leading information display industry which include Samsung Electronics LCD, LG Phillips LCD, AUO, Samsung SDI, and DisplaySearch. - See page 22 for full program TUTORIALS - Full-HD PDP Technical Issues - Breakthrough Technology for Successful AMOLED Business Monday, August 27, 09:00~18:00 Mr. Walter Zywottek (Merck KGaA, The Executive Board Member of Merck KGaA, Germany) Tuesday, August 28, 09:20~10:00, Convention Hall II AMD PDP Digital Color and Display Electronics Devices for Active Matrix Displays PDP Discharge and Driving Waveform Digital Color and Display Electronics Keynote II : Future Trends in Information Displays Dr. Hee-Gook Lee (LG Electronics, Inc., President and Chief Technology Officer, Korea) Tuesday, August 28, 10:00~10:40, Convention Hall II OLED - See page 14 for full program Understanding OLED Fundamentals: From Basic Principles to Devices 6 IMID 2007 August 27-31,

7 SPECIAL SESSION Wednesday, August 29, 14:00~18:00 FPD Standardization Forum - See page 59 for full program Presentation Time for Speakers - Keynote : 40 min. - Invited : 25 min. (including 5 min. Q&A) - Oral : 20 min. (including 3 min. Q&A) - Workshops & Tutorials : 60~90 min. (including 10 min. Q&A) EXHIBITION The IMID 2007 exhibition of display components and systems opens Wednesday morning, August 29 at 11:00 and concludes at 14:00 on Friday, August 31. The latest manufacturing equipment, measuring tools, display devices, components, materials and related products for display technologies will be presented. Please take this opportunity to enjoy informative discussion with exhibitors. - See page 151 for exhibitors list SOCIAL EVENTS You are cordially invited to join these special events during IMID Welcome Reception Date & Time Location Fee Mon. August 27, 2007 EXCO, 5th Floor Lobby Free to all participants AWARDS Wednesday, August 29, 2007 at IMID 2007 Banquet / Inter-burgo Hotel, Daegu 1. Award of Minister of Science and Technology (Republic of Korea) 2. Merck Award, Merck Young Researcher Award The awardees has been selected from papers submitted to IMID 2007 based upon their originality and technical significance to information display industry. Banquet Date & Time Location Fee Wed. August 29, 2007 Inter-Burgo Hotel KRW 50,000 REGISTRATION DESK HOURS Registration desk will open at the EXCO lobby (1F) on Monday through Friday from 08:00 to 18:00. 8 IMID 2007 August 27-31,

8 Daegu Transportation As for public transportation in Daegu, there are buses, subways, and taxis. A notable feature of the public transportation system in Daegu is a joint fare system between buses and between bus and subway, which allows free transfers between two different buses or between a bus and a subway with transportation cards (but not with cash). After first boarding a bus, you can transfer to another bus or a subway within one hour at no additional charge. But if taking a subway first, you need to transfer to a bus within 30 minutes after getting off the subway without extra charge. Taxi Fare Call Taxi Company (in Daegu) Calls for a regular taxi KS Taxi_ (053) , Unbulyeon Taxi_ (053) , Sinjin OK Taxi_ (053) Calls for a limousine taxi_ (053) , Calls for a large limousine_ (053) Bus Initial Fare (up to 2km) Daytime Night (midnight-4am) 7th International Meeting on Information Display GENERAL INFORMATION 1,800 Won (2km) 2,160 Won (2km) Bus Type Additional Fare (distance/time) 100 Won (per 159m/38s) 120 Won (per 159m/38s) Maximum Number 4 people Credit Card N/A Adults (cash/card) Receipt N/A Language Hangeul was invented in 1443, during the reign of King Sejong. It is composed of 10 vowels and 14 consonants. Hangeul has 11 compound vowels, 5 glottal sounds. The chart below represents the 24 Hangeul letters and their romanized equivalents. The Hunminjeongeum, a historical document which provides instructions to educate people using Hangeul, is registered with UNESCO. UNESCO awards a King Sejong Literacy Prize, every year in memory of the inventor of Hangeul. English Korean Korean Pronunciation How are you? 안녕하세요? Annyeong-haseyo? Thank you. 감사합니다. Gamsa-hamnida. Yes. 예. Ye. No. 아니요. Aniyo. I am sorry. 미안합니다. Mian-hamnida. I enjoyed the meal. 잘먹었습니다. Jal meogeot-sseumnida. Please give me some more of this. The check, please. 계산서주세요. Gyesanseo juseyo. Do you take credit cards? Currency 이것더주세요. 카드로계산할수있습니까? Igeot deo juseyo. Kadeuro gyesan halsu isseumnikka? How much is it? 얼마입니까? Eolma-imnikka? It is won. 원입니다. won imnida. Where is the rest room? 화장실어디입니까? Hwajangsil oedi-imnikka? Goodbye. 안녕히계세요. Annyeonghi gyeseyo. The unit of Korean currency is the Won (\). Coin denominations are \10, \50, \100 and \500. Banknotes are \1,000, \5,000 and \10,000. Circular Line, Trunk Line, Branch Line Express Trunk Line 1,100 Won / 950 Won 1,500 Won / 1,300 Won 10 IMID 2007 August 27-31,

9 Bills Coins 10,000 won man won 500 won obaek won 100 won baek won 5,000 won ocheon won 50 won osip won 1,000 won cheon won 10 won sip won - Currency exchange Foreign banknotes and traveler s check can be exchanged at foreign exchange banks and other authorized moneychangers. - Credit cards Diners Club, Visa, American Express and MasterCard are widely accepted at major hotels, shops and restaurants in the larger cities. Check with your credit card company for details of merchant acceptability and other services which may be available. - Traveler s check Accepted, but may be difficult to change in smaller towns. To avoid additional exchange rate charges, travelers are advised to take Traveler s check in US Dollars. - Public Phone There are three types of public telephones in Korea: coinoperated telephones, card phones, and credit card phones. A local call costs 70 won (US$0.06) for three minutes. Intercity calls cost considerably more. Coin phones return coins that are not charged, but do not return change for partially used 100 won coins. Card telephones can be used to make international calls as well as local and intercity calls. Telephone cards come in 2,000, 3,000, 5,000, and 10,000 denominations and are on sale in shops close to telephone boxes and in banks. There are also credit card phones, which you can use with major credit cards. How to make a International Call in Korea: 001-<Country Code>-<Area Code>-<Telephone No.> How to make a call to Korea <International calling service number>+82-<area Code>-<Telephone No.> - Korea Travel Phone 1330 When you need English assistance or travel information, just dial 1330, and a bilingual operator will offer you detailed information on tourist sites, transportation, restaurants, etc. If you want information about areas outside of Seoul, enter the area code of that region before pressing (In Daegu: ) Telephone Calls - Rent a Mobile Phone By all means, yes. Cell-phone Rental Services are available at Incheon International Airport. This service must be ordered in advance. Online-Reservation is possible on www. Tour2Korea.com. For more information on cell-phone fees, rental locations and online reservations, please visit the below web site. 12 IMID 2007 August 27-31,

10 August 27 (Monday) Room 505 Tutorial 1 : Devices for Active Matrix Displays AM Chair S. W. Lee (Kyung Hee Univ., Korea) T1-1 09:00 TFT LCD s Future from the View of Technology Life Cycle H. -S. Soh (Hoseo Univ., Korea) TFT LCD industry began noticable with introduction of laptop PC and showed rapid growth in revenue and production volume. Behind this industrial expansion there have been a lot of pioneers efforts comparable to silicon technology. TFT LCD s new innovations will be commented, and key competence of TFT technology needs another leapfrog to continue the growth. A vision to new technologies related to TFT or LCD will be shared. Coffee Break 15:30-15:40 T1-4 15:40 TFT-LCD Process & Future Technologies N. -S. Roh (Samsung Electronics, Co., Ltd., Korea) This tutorial tells about typical industry standard TFT-LCD process technologies currently used. Full process of the TFT-LCD components such as TFT backplane, Color Filter, and some module are described. After normal process description, this tutorial deal with future display technologies such as flexible display. Coffee Break 10:30-10:40 T1-2 10:40 AMLCD Technologies for TFT-LCD TVs N. D. Kim (Samsung Electronics Co., Ltd., Korea) The aim of this tutorial is to introduce the advancement of PVA mode panel and driving technologies for the high image quality of TFT-LCD. The first part will include TFT-LCD array technologies on viewing angle, transmittance, and contrast in PVA mode panel. In the second part, the display driving technologies for achieving high color depth and reducing motion blur for highend TVs will be reviewed. Lunch Break 12:10-14:00 PM Chair W. J. Lee (Samsung Electronics Co., Ltd., Korea) T1-3 14:00 a:si:h TFT Gate Drive Circuits B. S. Bae (Hoseo Univ., Korea) Hydrogenated amorphous silicon (a-si:h) thin film transistors(tft Øs) are used for integrated gate drive circuits in spite of its low mobility. This tutorial covers the basic operation of a-si:h gate driver and the instability of it, including various way to improve stability. 14 IMID 2007 August 27-31,

11 August 27 (Monday) Room 315 Tutorial 2 : PDP Discharge and Driving Waveform Chair H. -S. Tae (Kyungpook Nat l Univ., Korea) Co-Chair D. C. Jeong (Hoseo Univ., Korea) T2-1 09:00 Gas Discharge Physics J. H. Seo (Univ. of Incheon, Korea) This course will provide an overview of gas discharge phenomena in ac PDP. Topics include analysis of reaction pathways in Ne-Xe mixture, dynamic evolution of discharge in ac surface-type PDP and efficiency analysis. It is intended to serve as an introductory course for entry level engineers. T2-4 15:40 The Basic of the PDP Driver System J. -S. Kim (Seoul Nat l Univ., Korea) On the basis of the PDP circuit model, the operation of the PDP driver system that is classified into reset, address and sustain drivers will be explained. This tutorial includes importance issues and the trend of system implementation as well. Coffee Break 10:30-10:40 T2-2 10:40 Process Technology and Materials for PDP C. -H. Moon (Hoseo Univ., Korea) PDP(Plasma Display Panel) manufacturing process consists of front panel, rear panel and module processes. Process technology and materials for PDP will be explained in this tutorial, including coating technology, photolithography, thermal process, interconnection process, powder/paste technology and new process technology and so on. Lunch Break 12:10-14:00 T2-3 14:00 Driving Waveforms of ac PDP J. K. Kim (Hankyong Nat l Univ., Korea) This tutorial will survey ac PDP driving waveforms focusing on how discharge cells are controlled by various pulse applications. The tutorial explains how display systems work and the concept of ac PDP driving method. The participants will obtain a working knowledge of how to design ac PDP driving waveform. Coffee Break 15:30-15:40 16 IMID 2007 August 27-31,

12 August 27 (Monday) Room 306 Tutorial 3 : Digital Color and Display Electronics AM Chair C. -W. Kim (Inha Univ., Korea) Co-Chair J. Y. Jeong (The Univ. of Suwon, Korea) T3-1 09:30 Design of Timing Controller for Medium / Large Size TFT LCD S. Hong (TLi, Korea) About the design and the system architecture issues related to TCON for TFT LCD Coffee Break 15:20-15:30 T3-4 15:30 Image Enhancement Techniques for Displays C. -W. Kim (Inha Univ., Korea) Image quality is one of the most important factors determining performance of display systems. This tutorial introduces various image enhancement techniques to improve image quality on displays. They include color reproduction, tone reproduction, dynamic false contour reduction, frame rate conversion, and viewing angle evaluation. Coffee Break 10:50-11:00 T3-2 11:00 Digital Display Interface Technology D. -K. Jeong (Seoul Nat l Univ., Korea) Popular digital video interfaces are summarized with comparisons of their performance and features regarding the clocking scheme, power consumption, the deskewing method, and the signaling level in the context of their application environments. Requirements and design challenges for the next generation digital display interfaces are presented. Lunch Break 12:20-14:00 PM Chair C. Yoo (Hanyang Univ., Korea) Co-Chair B. D. Choi (Hanyang Univ., Korea) T3-3 14:00 Current Process in Digital Color Y. -H. Ha and C. -H. Lee (Kyungpook Nat l Univ. and Andong Nat l Univ., Korea) Color and imaging is newly emerging research area which is necessary for digital devices and system such as PDP, LCD, mobile Phone, inkjet printer, and digital camera, etc. We will present the topics on current color and imaging technologies such as color science, image quality, color reproduction on the display, multi-spectral color image processing, and color appearance model. 18 IMID 2007 August 27-31,

13 August 27 (Monday) Room 314 Tutorial 4 : Understanding OLED Fundamentals: From Basic Principles to Devices AM 1 Chair L. -M. Do (ETRI, Korea) T4-1 09:00 Basic Operating Principle of OLED J. Y. Lee (Dankook Univ., Korea) In this talk, basic operating principle of organic light emitting diodes will be discussed including device physics and charge transport of organic electronic materials. This talk will cover light emitting mechanism and device structure for high performances in organic light emitting diodes. T4-2 10:00 Recent Trends of OLED Materials S. K. Kwon (Gyeongsang Nat l Univ., Korea) This tutorial deals with the importance of OLED materialds, basic concept and mechanism to understand OLED materials, the kinds of OLED materials, and prerequisite for OLED materials. OLED materials are devided into vacuum deposition and solution processing materials by processing method. Vacuum deposition materials are classified into fluorescent materials and phosphorescent materials according to emitting mechanism. Solution processing materials are devided into polymer fluorescent materials, polymer phosphorescent materials, and dendrimers. The design concepts and challenging problems to realize OLED TV are also discussed. Coffee Break 11:00-11:30 AM 2 Chair Y. Park (Kyung Hee Univ., Korea) Lunch Break 12:30-14:00 PM Chair C. Lee (Seoul Nat l Univ., Korea) T4-4 14:00 Top Emission OLED and White OLED Technology J. H. Kwon (Kyung Hee Univ., Korea) This course s goal is to understand basic technologies on top emission OLED and white OLED. Technical requirements for highly efficient top emission OLEDs, technical issues in top emission OLEDs, basic technologies of white OLEDs, and current status of white OLED technology will be handled as key teaching subjects. T4-5 15:00 Numerical Modeling of Electrical Characteristics of Organic Light Emitting Didoes LED J. S. Choi (Hongik Univ., Korea) Fundamentals for the physical device modeling for OLEDs will be discussed. The physical models such as drift-diffusion current transport, field-dependent carrier mobility, exponential trap distribution, and Langevin recombination models are included in this computer model. Several numerical techniques will be presented as well. Theoretical simulations of spatial distribution of charge carriers and recombination rate, and I-V characteristics of the multi-layer organic light emitting diodes will be explained. The simulated results will be compared with the experimental data indicating the validity of the physical models for organic light emitting diodes. T4-3 11:30 Role of Interface in OLED for Enhancing the Device Efficiency and Lifetime B. D. Chin (KIST, Korea) In this tutorial presentation, we will discuss the science and engineering that are present at the interfaces in the organic light-emitting device (OLED). Starting from the basic measurement technique of the molecular energy levels, some of the practical issues (such as the physical/chemical treatment of electrodes, reduction of charge injection barrier by the optimized organic/metal interface, charge carrier trapping at the organic-organic interface, and the diffusion of metallic species into organic layers) will be explained in detail. This will help us to understand how the efficiency and lifetime of OLED can be improved by a precise control of the related interfacial phenomena. 20 IMID 2007 August 27-31,

14 August 27 (Monday) Room :00 Forum Introduction HS Ahn (DisplaySearch) 09:10 IMID BUSINESS FORUM 2007 Flat Panel TV Market Outlook Ross Young (DisplaySearch) Flat panel TVs are surging worldwide, but which segments of the TV supply chain are benefiting? This presentation will examine the latest flat panel TV sell-in and sell-through results by technology, region, size, resolution and price point and provide our latest TV market outlook. In addition to discussing what to expect this holiday season, it will also examine the most recent financial and operational results and outlook for the different segments in the TV supply chain and identify which offer the best investment opportunities. 09:50 LCD TV Panel Market & Technology Outlook Frank Ko (AU Optronics Corp., Taiwan) 10:20 Samsung s Technology and Business Approach for the Next Generation of LCD Peter Shin (Samsung Electronics) This presentation is going to deal with the recent technology trend and progress of LCD and Samsung s approach for LCD technology and business, which contains two main topics. One is about the strategy for TV and IT products to establish large size and high resolution, performance upgrade, low cost etc., and the other is about new display technologies such as plastic LCD, OLED, printed organic TFT, reflective color mode, and plastic substrate handling as well. 11:00 Changes in the Competitive Structure of the TFT LCD Industry Brian Kim (LG.Philips LCD Co., Ltd.) The TFT-LCD industry has surely grown at an impressive pace over the past ten years. There is no doubt it has become the dominant display technology in the flat panel display market promising high return. The LCD TV industry deserves special attention considering its potential for explosive growth. Recently, the competitive structure of the TFT-LCD industry changed due to fierce competition among suppliers. Competition resulted in panel price drops and reduced revenue growth with only few major suppliers left in the market. Future TFT-LCD market will require suppliers to enhance manufacturing productivity, improve cost efficiency, and deliver high-end products that meet customer s needs. Following this trend, the LCD TV industry will require suppliers to enhance capacity to create a new market and establish strategic alliance with component makers and set makers. A more market-driven and value-based company will bring changes to the competitive structure of this dynamic industry. LG.Philips LCD will make every effort to deliver innovative solutions in the market and bring value to customers. 11:30 Top TV Marker s TV Technology/Market Forecast Bong Joo Park (Samsung Electronics Co., Ltd.) 13:20 PDP Market and Technology Outlook SangGyu Park (Samsung SDI Co., Ltd.) 13:45 Small/Medium Display Market Forecast Barry Young (DisplaySearch) Small/Medium display shipments reached over 600M in 2006 up 21% but revenues were down 1% Y/Y due to the rapid drop in ASPs. Is this movement expected to continue and what applications are likely to reverse the trend in 2007 and 2008 The talk will also address the change in technology mix as OLED displays enter the market and a-si and p-si continue to steal market share from CSTN devices. 14:10 The Power of AMOLED JunHyeog Song (Samsung SDI Co., Ltd.) There had been a lot of noise about AMOLED and it is true that some doubts whether AMOLED could be the next generation technology. At last, AMOLED is on the market. As market test, AMOLED adopted products such as Clix by Reigncom and Media Skin by Kyocera came out on the market in 2007 February and it proved the superiority of AMOLED. In the Presentation, it would like to discuss the real market response in detail about AMOLED applied products as well as consumer evaluation survey conducted by recognized research company such as TNS and AC Neilson. Furthermore it discusses the future display market trend. 14:35 FPD Cost/Material Analysis Yoshio Tamura (DisplaySearch) DisplaySearch have been forecasting FPD module prices by using its detailed module cost forecasts. Our cost forecasts are created not only by getting all of the component costs and equipment/facility costs but also by checking the real total module costs. DisplaySearch is the creator of this kind of the detailed FPD cost model and we 22 IMID 2007 August 27-31,

15 can create a number of FPD costs. At the same time, we are considering the module profitability to the future with supply/demand considered. Hope you can see LCD profitability getting better this year based on this best methodology from this session. 15:00 Digital Information Displays-The current market for Large Format Commercial-Use Public Displays and Trigger Points for Growth Acceleration Chris Connery (DisplaySearch) Commercial use, large format FPDs are the next major frontier for LCD and PDP technology alike. In order for the market to truly develop on its own, however, the display industry must recognize that this is not simply a technology switch, but is an opportunity to create an entirely new market; one which replaces the printed page with digital displays. Beyond defining Commercial Grade and Consumer Grade from both a panel and a set perspective, market acceleration tactics which will allow this sub-market to move from one of steady growth to one of explosive growth such as Solution Selling and Strategic Partnership potentials will also be highlighted. 15:45 TFT LCD Industry in Taiwan and China David Hsieh (DisplaySearch) Taiwanese TFT makers are playing the key roles in the global TFT LCD industry not only because of their competition relationships with Korean makers but also with many creative product developments, business style and competitive capability to reduce the cost and enlarge the market share. Meanwhile, Chinese TFT LCD makers are showing another different way of development with the strong support of the government. The presentation will be mainly looking at the Taiwanese and Chinese TFT makers from different aspects, including the overall and individual strategies, capacity expansion plans, vertical integrations, supply chain relationships and cost down activities. 16:05 Taiwan strategy in TFT industry TC Huang (CPT) There are some businesses models change for Taiwan panel maker since Innolux s success in its vertical integration strategy. This presentation will examine the strategy change in Taiwan TFT panel maker and analysis the reason why Taiwan panel makers change their strategy. In the end, I will also examine CPT s strategy in the next coming year. 16:55 Recent Trend and outlook of LCD BLU (Backlight Light Unit) KwangSik Lee (Samsung SDI Co., Ltd.) This presentation will discuss the latest summary for the LCD BLU technology and related devices. It will examine the outlook for related issues as follows: - What is a big issue in LCD module and BLU to be CRT-like LCD? - What kind of BLU s technologies do we need to be CRT-like LCD? - Is it possible to replace the traditional Hg type fluorescent BLU (the TV s light source) with Hg-free BLU? - Who will be a leader in flat panel display in near future? New technology, D1- and D2- ABC (Active Brightness Control) in BLU will be discussed in this talk. ABC easily effectively control a peak brightness and a deep black levels in LCD BLU. 17:20 LCD Optical Film Technology and Market Forecast JaeKyun Choi (MNTECH) 17:45 Outlook of DTV Display technology and material YoonSung Chung (DisplaySearch) As DTV price is dramatically decreasing, DTV market?has rapidly grown up recently. As a result, displays for DTV such as LCD and PDP are now in war for taking initiative. Two camps are hardly struggling for improving picture quality and cost power for this, and component and material industry of two displays also get in the ring and market size is rapidly growing up. And finally Display s competitive power depends on its component and material industry ability and power. In this speech, I want to explain two points of view. One is display including competition status of Display technology and future trend. The other is view of component and material including industry status, trend and future outlook. 16:30 Flexible Display Technology Trend and Market Outlook YeonGon Mo (Samsung SDI Co., Ltd.) The presentation will review the latest technology trend and progress of flexible display, which includes the technical developments and issues in such technical areas as flexible display devices and driving device, substrates, and encapsulation. It will also deal with the recent market environments and outlook of flexible display. 24 IMID 2007 August 27-31,

16 7th International Meeting on Information Display CONFERENCE PROGRAM August 28 (Tuesday) Room Crystallization Technologies Chair G. Fortunato (IFN-CNR, Italy) Co-Chair K. Im (Samsung SDI, Co., Ltd., Korea) August 28 (Tuesday) Chair Opening Address 09:00-09:10 Ki-Woong Whang (President of KIDS, Korea) Congratulatory Address 09:10-09:15 Larry Weber (President of SID, USA) Opening Ceremony Oh-Kyong Kwon (Hanyang Univ., Korea) Welcome Address 09:15-09:20 Bong Kyu Park (Vice Mayor for Economic Affairs, Korea) August 28 (Tuesday) Keynote Address Chair Yong-Seog Kim (Hongik Univ., Korea) Convention Hall II Convention Hall II Keynote Address 1 09:20 Liquid Crystals - A Key Component in LCDs W. Zywottek (Merck KGaA, Germany) TFT-LCDs remain the fastest growing segment in the display industry and will continue to dominate all important applications from notebook, monitor to TV. The LCD-TV market will show the strongest growth with a shift to larger screen sizes. Main areas for improvement are contrast, backlight, and moving picture response time. Keynote Address 2 10:00 Future Trends in Information Displays H. -G. Lee (LG Electronics, Inc., Korea) The era of analog TV is coming to an end as countries fade out analog TV in favor of digital TV. As a result, DTV demand and penetration continue to rise, with demand forecasted at 152 million and penetration rate at 71% by 2010(DisplaySearch). This phenomenon will give rise to several trends in the large size display industry that players will have to keep up with if they want to remain competitive :00-11:25 [Invited] Excimer Laser-induced Crystallization of Si Films for Manufacturing LTPS TFT-based Displays U. J. Chung, A. B. Limanov, P. C. van der Wilt, A. M. Chitu, and J. S. Im (Columbia Univ., USA) Laser-irradiation-induced crystallization of as-deposited amorphous precursor films constitutes an integral step in fabricating LTPS TFTs. Consideration of various factors leads one to conclude that, for display manufacturers, choosing how to crystallize the films can be identified as being tactically and strategically significant :25-11:50 [Invited] SLS (Sequential Lateral Solidification) Technology for High End Mobile Applications M.-K. Kang (Samsung Electronics, Co., Ltd., Korea), H. J. Kim (Yonsei Univ., Korea), C. W. Kim, and H. G. Kim (Samsung Electronics, Co., Ltd., Korea) The critical parameters for SLS p-si microstructure were intensively studied. The optimized condition for large lateral growth and overlap distance could be determined. New mixing technology could be developed to produce high performance, uniform AMOLED devices :50-12:10 Recent Advances in Excimer-laser-based Crystallization for Active-Matrix Displays B. A. Turk (Coherent, Inc., USA), L. Herbst, F. Simon, and R. Paetzel (Coherent, GmbH, Germany) Excimer-laser-based crystallization is ideally-suited for forming crystalline Si films on glass substrates for use in active-matrix displays. In this paper, we will report on recent and significant technical advances in light sources and beam delivery systems targeted at enabling ultra-uniform mura-free low-temperature polycrystalline silicon active-matrix backplanes while simultaneously lowering production costs and increasing throughput :10-12:30 The Characterization of Poly-Si Thin Film Transistor Crystallized by a New Alignment SLS Process S. J. Lee, J. Y. Yang, K. S. Hwang, M. S. Yang, and I. B. Kang (LG. Phillips LCD Co., Ltd., Korea) In this paper, we present work that has been carried out using the SLS process to control grain boundary (GB) location in TFT channel region and it is possible to locate the GB at the same location in the channel region of each TFT. We fabricated TFT by applying a new alignment SLS process. 26 IMID 2007 August 27-31,

17 August 28 (Tuesday) Room PDP Discharge Physics August 28 (Tuesday) Room AMOLED TV Chair T. Shiga (The Univ. of Electro-Communications, Japan) Co-Chair K. C. Choi (KAIST, Korea) Chair A. Ghosh (emagin, USA) Co-Chair H. D. Kim (Samsung SDI, Co., Ltd., Korea) :00-11:25 [Invited] Understanding the Physics of Plasma Display Addressing V. P. Nagorny (Mattson Tech., USA) This article discusses physical processes affecting the speed of addressing discharge, and ways to both significantly increase the speed, and lower the cost of addressing :25-11:45 Analysis of the Luminous Efficacy Improvement in Full HD ac Plasma Display Panel H. S. Bae and K.-W. Whang (Seoul Nat l Univ., Korea) We analyzed the effect of cell resolution on the luminous efficacy through 3D numerical simulation. The increase of electrode gap and the application of SDE type with 4:3 aspect ratio show higher improvement in Full HD compared with that of conventional XGA, due to the reduced plasma loss :45-12:05 Numerical Analysis of the Striation Phenomena in an ac Plasma Display Panel using Energy Fluid Model H. S. Bae and K.-W. Whang (Seoul Nat l Univ., Korea) We performed a discharge analysis on ac PDP through the numerical simulation of the EF (Energy Fluid) model using the electron s energy equation. The experimentally observed striation phenomena in the anode region could be observed in EF model and the occurrence of the striation was attributed to the ionization instability due to the streaming electrons :00-11:25 [Invited] Large-Sized AMOLED for TV Application C. Chu, J. Chung, D. Lee, J. Ha, J. Choi, S. Lee, J.-H. Lee, S. Lee, and S. Shin (Samsung Electronics Co., Ltd., Korea) Since the scalability of OLED process is crucial factor for large-sized TV manufacturing, various technologies are reviewed based on the published information. Despite of recent technology advancement enabling high color purity, large-sized AMOLED, a lot of problems to solve still exist to enter the large-sized display market :25-11:45 Method to Enhance Color Gamut up to 89% in Bottom Emission Active-Matrix Organic Light Emitting Device H. K. Kim, H. S. Choi, D. H. Yoo, W. C. Kim, J. G. Yoon, and J. W. Yang (LG Electronics Inc., Korea) Though bottom emission AM-OLED has advantagesin respect of mass production, the bottom emission type is underrated due to its low aperture ratio andlow color gamut, compared with top emission type :45-12:05 Using Net Power Control for AMOLED TV A. Arkhipov, B.-W. Lee, K. Park, S.-d. Sung, S. Shin (Samsung Electronics Co., Ltd., Korea), and K. Chung (Cheil Industries Inc., Korea) The maximum current level in organic light emitting diodes (OLED) panel influences the maximum pixel luminance, the width of VDD lines, the maximum power consumption and the lifetime. We propose an algorithm that limits the overall current without any palpable image artifacts, and therefore, improve panel parameters by program :05-12:25 Inverted OLED Structure for 3.5 Inch Full Color AMOLED Display on a-si TFT Backplane J. H. Park, J. Y. Park, K. J. Hwang, H. D. Choi, N. H. Myung, S. J. Lee, S. C. Park (LG. Phillips LCD Co., Ltd., Korea), J. B. Kim, Y. H. Hahm, J. K. Noh, J. H. Lee, J. S. Kim, and M. S. Kang (LG Chem., Ltd., Korea) Top-emission 3.5 inch qvga IOD (Inverted AMOLED) was fabricated with inverted EL structure driven by a-si TFT backplane. LG-201 (ETL) layer was studied for more efficient electron injection from cathode to EML, and LG-101 (HIL & Buffer layer) covered by IZO anode was also explored for decreasing the EL surface damage. 28 IMID 2007 August 27-31,

18 August 28 (Tuesday) Room Flexible AMOLED August 28 (Tuesday) Room Optical Films for LCD Application Chair M. Ezawa (GE Planstic, Japan) Co-Chair Y. -G. Mo (Samsung SDI Co., Ltd., Korea) Chair J. I. Han (KETI, Korea) Co-Chair C. -c. Liao (ITRI, Taiwan) :00-11:25 [Invited] Flexible Display Roadmap and the Market Outlook B. Young (Displaysearch, USA) Flexible Displays are beginning to enter the market and promise to address both existing and new applications. This presentation will cover the challenges and the prospects for growth of this emerging display technology :25-11:50 [Invited] Analysis of Low Power Consumption AMOLED Displays on Flexible Stainless Steel Substrates M. Hack, R. Hewitt, R. Ma, J. J. Brown (Universal Display Corp., USA), J. W. Choi, J. H. Cheon, S. H. Kim, and J. Jang (Kyung Hee Univ., Korea) We present simulations and results to demonstrate the viability of stainless steel foil as a substrate for low power consumption, flexible AMOLED displays. Using organic planarization layers, we achieve very smooth surface properties, resulting in excellent TFT performance, that can be repetitively flexed without significantly affecting device performance :50-12:15 [Invited] Development of Flexible 3.5 QCIF (176X144 pixels) OTFT Driven OLED : Integration Technologies Compatible with Normal Semiconductor Processes S.-Y. Kang, S. D. Ahn, J.-Y. Oh, G.-H. Kim, J. B. Koo, I.-K. You, C.-A. Kim, C.-S. Hwang, S.-H. Ko Park, Y. S. Yang, S. M. Chung, J.-I. Lee, H. Y. Chu, and K. S. Suh (ETRI, Korea) Conventional semiconductor processes have been utilized to fabricate 3.5-inch OTFT-driven OLEDs with a resolution of pixels on plastic substrates. By using a PC-OVD method to deposit a pentacene layer and optimizing patterning and the following processes, we could complete a uniform and reliable integration procedure for an active matrix organic light emitting devices on a plastic substrate :15-12:35 All-Printed Flexible OLEDs M. Arto, T. Markus, V. Marja, and M. Tiina (VTT Technological Research Center of Finland, Finland) We have investigated printing techniques for processing organic light-emitting diodes (OLEDs). We succeeded to gravure print uniform organic thin films as well as screen print low work function cathode for OLED structure. Furthermore, by using roll-to-roll manufacturing methods, we have been able to fabricate all-printed flexible OLED demonstrator :00-11:25 [Invited] Flexible Liquid Crystal Film using Continuous Process C.-C. Liao, H.-L. Wang, K.-H. Liu, R.-D. Chen, C.-Y. Chang, S.-C. Jeng, Y.-R. Lin (ITRI, Taiwan), K. Lu, R. Chang, and J. Chen (Taiflex Scientific Co., Ltd., Taiwan) Micro-cell LC film and polymer network liquid crystal (PNLC) film by using continuous compatible process have been developed. A high-contrast micro-cell LC film has a strong potential as a high- performance flexible device. PNLC film has the low driving voltage. Both films show the characteristics of lightness, thinness and mechanical stability :25-11:50 [Invited] Films for Widening the Viewing Angle of LCDs H. Mori (FUJIFILM Co., Japan) Optical compensation films are widely used to enlarge viewing angle characteristics for LCDs. A new surface film with an inner light scattering layer was newly developed to improve gray scale inversion. This paper describes technologies regarding these films that enhance the viewing angle characteristics for LCDs :50-12:10 Adjustable Pretilt Angle of Liquid Crystal Alignment Materials S.-S. Lin, C.-D. Lee (ITRI, Taiwan), Y.-T. Su, and Y.-D. Lee (Nat l Tsing Hua Univ., Taiwan) We have developed a series of fluorinated dimethacrylate copolymers. Our work has covered the synthesized derivatives of alignment materials, characterized the pretilt angle and uniformity of liquid crystal alignment layer. The pretilt angle can be tailored by using the fluorinated copolymer. Excellent uniformity was achieved as shown in experimental results. 30 IMID 2007 August 27-31,

19 August 28 (Tuesday) Room Advanced Manufacturing Equipment August 28 (Tuesday) Room Optical Properties of LCs and Photonic Applications Chair E. Elizur (Kodak Graphic Communications, Canada) Chair L. C. Chien (Kent State Univ., USA) Co-Chair H. -R. Kim (Kyungpook Nat l Univ., Korea) :00-11:25 [Invited] Challenges for Large Area Processing Equipment for TFT-LCD Manufacturing T. Tanaka (AKT, USA) As the manufacturing capacity needs for large size LCD TV shifts very fast into next generation, equipment manufactures face more challenges in development of the systems which can accommodate productivity, reliability and high process quality requirements from the panel makers. AKT committed to continue its contribution to the growth of the LCD market by providing excellent PECVD products :25-11:50 [Invited] Atmospheric Metal Doping System and Application for Poly-Si Backplane D. H. Shin, J. M. Lee, S. K. Lee, and H. J. Kim (Viatron Technologies Inc., Korea) VIATRON TECHNOLOGIES has developed an Atmospheric Metal Doping (AMD) system which produces doping of trace amount of Ni onto amorphous Si, enabling uniform MIC crystallization. Also, the operation without vacuum condition offers advantages such as easy maintenance, low cost production, and large glass processes :50-12:10 In-Line Manufacturing Tool using Linear Belt Source Evaporation for Large Size Lighting OLED and Flexible OLED C. H. Hwang (OLEDON Co., Ltd., Korea) We introduce the inline type mass production tool for the large size lighting OLEDs and flexible OLEDs. The manufacturing tool includes the linear belt source what is new concept for the organic deposition processes and the deposition operation combines directly to the encapsulation operation in a tool. The linear belt source evaporation in deposition processes is performed during the substrate transferring to innovatively improve the productivity in manufacturing :10-12:30 Large Area Flicker Metric for Display System B. H. Shin, J. Oh, H. Nam, and N. D. Kim (Samsung Electronics Co., Ltd., Korea) Existing metrics do not account for the non-linearity of human brightness perception. This paper presents an improved large area flicker metric to more accurately quantify large area display flicker performance :00-14:25 [Invited] Advanced Optical Configuration for Transmissive and Reflective Mode in the In-Plane Switching LC Cell K.-M. Kim and G.-D. Lee (Dong-A Univ., Korea) We propose a novel optical configuration for transmissive and reflective mode in the IPS LC cell to improve the viewing angle characteristics in a diagonal direction. The optical design was performed on a Poincar? sphere. From the calculation, we confirmed that the proposed configuration provides excellent viewing angle characteristics :25-14:50 [Invited] Chiral Liquid Crystals in Photonic Device Applications H. F. Gleeson, H.-G. Yoon, and N. W. Roberts (The Univ. of Machester, UK) Chiral liquid crystals exhibit band-gap structures responsive to electrical and optical fields, providing wide-ranging opportunities for photonics applications. We discuss three aspects of this technology: optics of chiral nematic devices and removal of pitch jumps; optical switching of chiral nematic materials; and using novel phases in photonic devices :50-15:10 Fabrication of a Microlens Array using a Birefringent Layer and Ferroelectric Liquid Crystal Y. Lee, K.-H. Lee, Y. Choi, and J.-H. Kim (Hanyang Univ., Korea) A new concept of the microlens array is fabricated using a birefringent layer on the concave microlens array. The stacked layers of liquid crystalline polymer and the UV epoxy focus an incident light due to the surface relief structure. The FLC layer was added to control the focusing intensity with a fast switching time. 32 IMID 2007 August 27-31,

20 August 28 (Tuesday) Room PDP Efficiency August 28 (Tuesday) Room AMOLED TFT Chair L. Weber (SID, USA) Co-Chair K. -Y. Choi (LG Electronics Inc., Korea) Chair T. K. Hatwar (Kodak, USA) :00-14:25 [Invited] High Efficacy and High Speed Addressing of a Spatial Positive Column Discharge PDP T. Shiga and S. Mikoshiba (The Univ. of Electro-Communications, Japan) Luminous efficacy of 6.0 lm/w has been realized by introducing a spatial positive column discharge together with delayed D pulses, shared sustain pulse voltage, and low sustain frequency drive. Also a high speed addressing of 0.25µs was achieved. The luminance was 157cd/m2, which is high enough for a 260- in. FHD display :25-14:45 Luminous Efficacy of 12 lm/w in an AC PDP in Terms of Measurement of the Discharge in Ne+20%Xe and Green Cells S.-M. Lee, K. H. Cho, and K. C. Choi (KAIST, Korea) Dual auxiliary pulses are adopted in an AC PDP with an auxiliary electrode. The secondary auxiliary pulse of dual auxiliary pulses efficiently utilizes priming particles and contributes to improved luminous efficacy. A shorter time interval between the two auxiliary pulses resulted in better efficacy :45-15:05 High Luminous Efficacy AC-PDP with Long Discharge Gap and Grooved Dielectric Structure D. Lee, K. Y. Choi, S. C. Choi, D. G. Baek, J. R. Lim, B. N. Ahn, and W. B. Park (LG Electronics Inc., Korea) A high luminous efficacy AC-PDP panel with long discharge gap and grooved dielectric layer has been studied. By applying this high efficacy concept, ~2.6lm/W of luminous efficacy was achieved in 42-inch HD panel. Modified fabricating process and new discharge cell structure were investigated to obtain improved uniformity and operating characteristics :05-15:25 New Front Plate Structure of ac-pdp using Aluminum Fence-type Electrode Coated with Anodic Aluminum Oxide M.-Y. Lee, S.-H. Yoon, and Y.-S. Kim (Hongik Univ., Korea) A new front plate structure of ac-pdp was explored using fence-type aluminum electrode coated with anodic aluminum oxide.in this structure, ITO and glass dielectric layer were eliminated and expensive Ag BUS electrode was replaced with aluminum.test panels were prepared using the new structure and their luminance and discharge characteristics were examined :00-14:25 [Invited] Novel Backplane for AM-OLED Device M.-C. Sung, H.-N. Lee, C. N. Kim, S. K. Kang, D. Y. Kim, S.-J. Kim, S. K. Kim, S.-K. Kim, H.-G. Kim, and S.-t. Kim (LG Electronisc Inc., Korea) IGZO TFTs were fabricated by conventional photo-lithography and wetetching processes on metal substrates for a flexible display. The characteristics of TFTs on metal substrates were comparable to those of TFTs on glass substrates. Moreover, an AM-OLED panel based on IGZO TFT arrays was successfully fabricated on a metal substrate, for the first time :25-14:50 [Invited] Ambipoalr Light-emitting Organic Field-effect Transistor using a Wide-band-gap Blue-emitting Molecule T. Sakanoue, M. Yahiro, and C. Adachi (Kyushu Univ., Japan) We prepared ambipolar organic field-effect transistors and observed blue emission when both hole and electron accumulation layers were in the channel. We found that the reduction of carrier traps and controlling devices preparation and measurement conditions were crucial for ambipolar operation :50-15:10 [Late News] 4 inch QVGA AMOLED display driven by GaInZnO TFT J. Y. Kwon, K. S. Son, J. S. Jung, T. S. Kim, M. K. Ryu, K. B. Park, J. W. Kim, Y. G. Lee, Y. S. Park, and S. Y. Lee (SAIT, Korea) We demonstrated 4 inch QVGA AMOLED display driven by GaInZnO TFT. The structure of GaInZnO TFT is back channel etch (BCE) which is conventional structure for a-si TFT. The electron mobility of GaInZnO TFT is 2.6 cm2/vs and Vt is 3.8V. It is thought that GaInZnO TFT could be backplane for AMOLED TV :10-15: Transparent QCIF AMOLED Display Driven by High Mobility Bottom Gate a-igzo Thin-film Transistors J. K. Jeong, M. Kim, J. H. Jeong, H. J. Lee, T. K. Ahn, H. S. Shin, K. Y. Kang, H. Seo, J. S. Park, H. Yang, H. J. Chung, Y. G. Mo, and H. D. Kim (Samsung SDI Co., Ltd., Korea) The high mobility of 35.8 cm 2 /Vs, a subthreshold gate voltage swing of 0.59 V/dec, and I on/off of were achieved for a-ingazno thin film transistor. In addition, 4.1 transparent QCIF active-matrix organic light-emitting diode display were successfully fabricated, which was driven by a-igzo 34 IMID 2007 August 27-31,

21 August 28 (Tuesday) Room OTFT I August 28 (Tuesday) Room OTFT Materials Technology Chair M. P. Hong (Korea Univ., Korea) Chair D. H. Choi (Korea Univ., Korea) Co-Chair K. Kudo (Chiba Univ., Japan) :00-14:25 [Invited] Fabrication of An Organic Thin-Film Transistor Array by Wettability Patterning for Liquid Crystal Displays S.-J. Kim, J.-H. Bae (Seoul Nat l Univ., Korea), T. Ahn, M. C. Suh, S. W. Chang, Y.-G. Mo, H.-K. Chung (Samsung SDI Co. Ltd., Korea), and S.-D. Lee (Seoul Nat l Univ., Korea) We demonstrate a novel selective patterning process of a semiconducting polymer for channel regions to fabricate an array of organic thin-film transistors (OTFTs). This process is applicable for various organic films over large area. A reflective liquid crystal display based on the OTFT array was produced using the selective patterning through a wettability control :25-14:45 Fabrication of Flexible OTFT Array with Printed Electrodes by using Microcontact and Direct Printing Processes J. Jo, T.-M. Lee, D.-S. Kim, K.-Y. Kim (KIMM, Korea), M. Esashi (Tohoku Univ., Japan), and E.-S. Lee (KIMM, Korea) Printed OTFT to use as a switching device for OLED were fabricated in the microcontact printing and direct printing processes at room temperature. These processes using h-pdms stamp made it possible to fabricate printed OTFT with channel lengths down to 5µm, and reduced the process by 20 steps compared with photolithography :45-15:05 Flexible OTFT-Backplane for Active Matrix Electrophoretic Display Panel M. W. Lee and C. K. Song (Dong-A Univ., Korea) We fabricated flexible OTFT-backplanes for the electrophoretic display (EPD). The OTFTs employed bottom contact structure on PEN substrate, we used PVA/Acryl double layers for passivation of backplane as well as for pixel dielectric layer between backplane and EPD panel. The OTFT-EPD panel worked successfully and demonstrated to display some patterns :00-14:25 [Invited] Interfacial Engineering of Polymer Light Emitting Diode S.-A. Chen (Nat l Tsing Hua Univ., Taiwan) The performance of polymer light emitting diode can be improved significantly by interfacial engineering on anode and/or cathode through adjusting the charge injection barriers for holes and electrons. Studies involve CFx and SAM modifications on ITO, thickness and delay time to baking of PEDOT:PSS, and electron injection/hole blocking layer :25-14:50 [Invited] Vertical Type Organic Transistors and Flexible Display Applications K. Kudo (Chiba Univ., Japan) Organic transistors are promising in the future development of active devices for flexible, low-cost and large-area photoelectric devices. Vertical type transistors show high-speed and high-current characteristics and are suitable for driver elements of flexible displays :50-15:15 [Invited] Cruciform Thiophene-based Molecules as Organic Semiconductors for Field Effect Transistor Applications D. H. Choi, D. C. Kim, K. H. Kim, M. J. Cho, and J.-I. Jin (Korea Univ., Korea) Cruciform conjugated molecule, 4 (HP3T)-benzene bearing terthiophene moieties has been synthesized through Heck coupling reaction using 5- hexyl- 5 -vinyl-[2,2 ;5,2 ]terthiophene as dendrons and 1, 2, 4, 5- tetrabromobenzene as the core unit. The semiconducting property of 4 (HP3T)-benzene have been evaluated in organic field-effect transistors. 4 (HP3T)-benzene exhibit carrier mobility as high as (3.7±0.5) 10-4 cm 2 V -1 s :15-15:35 Synthesis and Characterization of Novel Fused Aromatic Materials J.-W. Park, Q.-H. Zhao, T.-H. Kim (Gyeongsang Nat l Univ., Korea), M.- H. Yi (KRICT, Korea), Y.-H. Kim, and S.-K. Kwon (Gyeongsang Nat l Univ., Korea) A series of new oligomers were synthesized by Grignard reaction, the Suzuki coupling reaction, etc. The oligomers showed excellent TFT performance with mobilities higher than 0.5cm 3 V -1 S -1 and on/off ratios higher than Their electronic and optical properties were investigated using X-ray diffraction (XRD), UV-vis and photoluminescence spectroscopies. 36 IMID 2007 August 27-31,

22 August 28 (Tuesday) Room Novel Manufacturing Technology August 28 (Tuesday) Room LC Materials and Flexible Displays Chair J. Lee (CDT, UK) Chair Y. -P. Huang (Nat l Chiao Tung Univ.,, Taiwan) :00-14:25 [Invited] Transparent Conductive Oxides for Displays Applications B. Szyszka, F. Ruske, V. Sittinger, A. Pflug, W. Werner, C. Jacobs, A. Kaiser, and S. Ulrich (Fraunhofer Inst. for Surface Engineering and Thin Films IST, Germany) We report on our material and process research on ZnO:Al films and on our investigations on wet chemical etching using a variety of etching solutions. We achieve resistivity as low as 750µΩcm for ZnO:Al films with film thickness of 140nm. Etching with phosphorous acid allows for accurate fine patterning of the ZnO:Al films on glass substrates :25-14:45 Structure of Deposition Chamber using Belt Source Evaporation Techniques in AMOLED Manufacturing C. H. Hwang (OLEDON Co., Ltd., Korea) The organic deposition chamber has been developed using belt source evaporation techniques for the first time. The deposition chamber is consisted of the belt source, organic vapor source, and the mask alignment assembly. The rollers operate for the thin metal belt to continuously move with the automatic tension control. It has been proved for the belt source evaporation easy to operate and the alignment of the substrate/shadow mask becomes so simple to use in AMOLED manufacturing industry :45-15:05 Hyper Neutral Beam System for Damage Free Deposition of Indium-Tin Oxide Thin Films at Room Temperature S. J. Yoo, D. Kim, J. S. Kim, K. S. Oh, B. Lee (NFRC, Korea), S. W. Choi, Y. C. Park (Handong Global Univ., Korea), J.-N. Jang, and M. P. Hong (Korea Univ., Korea) A neutral beam system has been developed to produce hyperthermal neutral beams composed of indium, tin, and oxygen atoms. Using these hyper thermal neutral beams with energies in the range of tens of ev, high quality indium-tin oxide (ITO) thin films have been obtained on glass substrates at room temperature :05-15:30 [Invited] From Printing Graphics to Printing Electronics, The Digital Revolution in Display Manufacturing E. Elizur (Kodak Graphic Communications Canada Company, Canada) In this paper we present work done by Kodak Graphic-Communications-Group and our partners demonstrating applications where laser direct imaging could replace photolithography in display manufacturing. Such applications range from direct manufacturing (e.g. LCD color-filters) to producing masters where manufacturing is done by traditional printing methods (e.g. flexography, Gravure-printing). 38 IMID :50-16:15 [Invited] Synthesis and Mesomorphic Properties of Banana-Shaped Mesogens with All-Ester Linking Group E.-J. Choi, X. Cui (Kumoh Nat l Inst. of Tech., Korea), W.-C. Zin, C.-W. Ohk (POSTECH, Korea), T.-K. Lim, J.-H. Lee (Korea Univ., Korea), Y.-C. Kim, and S.-H. Paek (Kyung Hee Univ., Korea) Four banana-shaped compounds have beene synthesized introducing ester linking group into mesogenic unit, varying the central core with 1,6-, 1,7-, 2,3-, and 2,7-naphthylene units, and introducing the dodecyloxy group as the terminal flexible unit. All obtained compounds except one with 1,7-naphthylene unit were reversibly thermotropically liquid crystalline :15-16:35 Advanced LC Mixture Concept of Improved Response Time M. Czanta, K. Tarumi (Merck KGaA, Germany), S.-E. Lee, S.-K. Lee, and M.-O. Jin (Merck Advanced Technologies Ltd., Korea) Improvement of LC mixtures can be realized by the development of new molecules in combination with the identification of advanced mixture concepts. By new highpolar single materials rotational viscosity has recently been improved significantly. Now, a new LC mixture concept for IPS and FFS technology has been identified which additionally improves switching time by up to 10%. This advanced concept is based on a more efficient usage of high-polar materials and Super Low Viscous (SLV) compounds and simultaneous reduction of less efficient materials :35-17:00 [Invited] FLEXMatters Alliance for Production of Flexible Displays J. L. West (Kent State Univ., USA), A. Khan (Kent Displays Inc., USA), and B. Taheri (Alpha Micron Inc., USA) The FLEXMatters initiative is building a collaboration of universities and companies to develop and produce flexible devices. Kent Displays leads the production of flexible displays using their bistable cholesteric technology. FLEXMatter is building an industrial cluster for the production of flexible optical and electronic devices :00-17:20 Optically Compensated Bend Cell with Pixel-isolating Polymer Wall for a Flexible Display Application S. R. Lee, J. H. Lee, H. J. Jang, J. S. Jo, T.-H. Yoon, and J. C. Kim (Pusan Nat l Univ., Korea) An OCB cell with pixel-isolating polymer wall was proposed. The wall was formed by phase separation of LCs and polymer. Fabricated cell had initially π-twist state. It showed low driving voltage, wide viewing angle and fast response properties. Also, polymer wall provided the mechanical stability against external pressure. August 27-31,

23 August 28 (Tuesday) Room PDP Protecting Layer August 28 (Tuesday) Room White AMOLED Chair V. Nagorny (Mattson Technology, USA) Co-Chair H. Lee (Busan Nat l Univ., Korea) Chair J. Brown (Universal Display Corp., USA) :50-16:15 [Invited] Analysis of Materials for Protective Layers in AC PDPs. Y. T. Matulevich, M.-S. Lee, S.-K. Kim, J.-S. Choi, D.-S. Zang (Samsung SDI Co. Ltd., Korea), and M. Kirm (Univ. of Tartu, Estonia) To clarify processes responsible for improved characteristics of protective layers (e.g. SrCaO) the ion-induced electron emission and photoemission from these layers were analyzed. Additionally, a study of ternary Mg-, Ca-, Ba-based compounds as candidate materials for a protective layer of Plasma Display Panels has been performed as well :15-16:40 [Invited] Effects of Aging Treatment of doped-mgo Layer on Discharge Characteristics of ac-pdp K.-H. Park, M.-S. Ko, S.-H. Yoon, and Y.-S. Kim (Hongik Univ., Korea) Effects of aging treatment of doped-mgo electron emission layer on luminance efficiency of ac-pdp were investigated in this study. Morphological and luminance efficiency with aging treatment were examined, especially with emphasis on the effects of doping elements :40-17:00 Optimization of MgO Secondary Electron Emission in Plasma Displays, by the Adoption of a Suitable Getter Configuration - Part I : MgO degradation studies - M. Riva, A. Bonucci, C. Carretti (SAES Getters S.p.A., Italy), Y. Han, and E.-H. Choi (Kwangwoon Univ., Korea) The key role of MgO is well recognized in PDP s technology. During manufacturing, significant contamination of the oxide occurs. Getters can compete against the impurities sorption speed of the oxide layer. The analysis of the impact of a suitable getter configuration on the operational parameters of PDP s is the final goal of this study :00-17:20 Reconstruction Characteristics of MgO (111) Textured Protective Layer by Over-Frequency Accelerated Discharge in AC Plasma Display Pannel S.-K. Kwon, J.-H. Kim, S.-K. Moon (LG Electronics Inst. of Tech., Korea), H.-H. Kim, K.-H. Park, and S.-T. Kim (LG Electronics Inc., Korea) The reconstruction characteristics of MgO (111) textured protective layer by over-frequency accelerated discharge in AC-PDP were investigated and correlated to the variations of electronic structures. The reconstruction process and exaggerated grain growth (EGG) were explained by defect-assisted 2-D nucleation and growth mechanism combined with charged cluster model :50-16:15 [Invited] Advances in White OLED Tandem Architecture for Next Generation AMOLED Displays T. K. Hatwar, J. P. Spindler, J. R. Vargas, M. Helber, K. Klubek, W. Begley, M. Itoh, J. Hamer, and S. A. Van Slyke (Eastman Kodak Company, USA) Advances in white OLED tandem architecture are discussed. With these structures, stable and low-power full color AMOLED displays can be fabricated that are anticipated to be suitable for large area applications such as TVs :15-16:40 [Invited] Recent Advances In Small Molecule OLED Microdisplays A. P. Ghosh (emagin Corp., USA) emagin s unique OLED-on-silicon microdisplay technology is unique and is based on small molecule white OLED with color filters using a top emitter structure. This paper will present results of recent improvements in the technology including improved lifetimes and uniformity and will feature an SVGA resolution full color microdisplay that is 0.44 inches diagonal :40-17:05 [Invited] Highly Efficient, Long Living White PIN-OLEDs for AM Displays S. Murano, M. Vehse, G. He, J. Birnstock, and M. Hofmann (Novaled AG, Germany) Based on the novel air-stable n-dopant NDN26 long living and highly efficient white PIN OLEDs were build. Furthermore, it could be shown that the PIN OLED technology gives rise to high operation voltage stabilities in combination with very long lifetimes :05-17:25 [Late News] Optical Structure of White OLED for 100% Color Gamut B.-w. Lee, Y. I. Hwang, S. Shin (Samsung Electronics Co. Ltd., Korea), and Y.-g. Ju (Kyungpook Nat l Univ., Korea) We report a novel optical structure for bottom-emitting white OLEDs. The structure includes, reformulated color filter, dielectric mirror to enforce cavity resonance, and micro-scatterer to extract more light and diffuse the viewing angle dependency. With the new structure, the color gamut was 104% of that of NTSC, the transmission efficiency was 83%/3 and the color shift at 45º was maintained below 0.02 in the 1976 CIE color space. The color performance of White OLED + color filter system can match comparably that of RGB OLED + microcavity system. 40 IMID 2007 August 27-31,

24 August 28 (Tuesday) Room Si based TFT for Flexible Display August 28 (Tuesday) Room Materials for Flexible Display & BLU Chair M. Hack (Universal Display Corp., USA) Co-Chair K. C. Park (Kyung Hee Univ., Korea) Chair S. K. Kwon (Kyungsang Nat l Univ., Korea) Co-Chair Y. Majima (Tokyo Inst. of Technology, Japan) :50-16:15 [Invited] Direct Fabrication of a-si:h TFT Arrays on Flexible Substrates: Principal Manufacturing Challenges and Solutions S. M. O Rourke, D. E. Loy, C. Moyer, S. K. Ageno, B. P. O Brien, D. Bottesch, M. Marrs, J. Dailey, E. J. Bawolek, J. Trujillo, J. Kaminski, D. R. Allee, S. M. Venugopal, R. Cordova, N. Colaneri, and G. B. Raupp (Arizona State Univ., USA) Principal challenges to direct fabrication of high performance a- Si:H transistor arrays on flexible substrates include automated handling through bondingdebonding processes, substrate- compatible low temperature fabrication processes, management of dimensional instability of plastic substrates, and planarization and management of CTE mismatch for stainless steel foils. Viable solutions to address these challenges are described :15-16:40 [Invited] Large Size Plastic Display for Outdoor Application N.-S. Roh, T. H. Hwang, W. Lee, W. S. Hong, S. J. Kim, S. I. Kim, and P. Shin (Samsung Electronics Co., Ltd., Korea) A A4 size black and white reflective plastic display was developed for out door application. For document readability, high resolution of 180ppi plastic TFT backplane and high reflectance electrophoretic front panel sheet was used. Preparation of display was held near 100 process on PEN substrate :40-17:00 A Substrate Bias Effect on the Stability of a-si:h TFT Fabricated on a Flexible Metal Substrate C.-W. Han, W.-J. Nam, C.-D. Kim, K.-Y. Kim, I. B. Kang, I.-J. Chung (LG.Philips LCD Co., Ltd., Korea), and M.-K. Han (Seoul Nat l Univ., Korea) Hydrogenated amorphous silicon thin film transistors were fabricated on a flexible metal substrate. A negative voltage at a floated gate can be induced by a negative substrate bias through a capacitor between the substrate and gate electrode. This can recover the shifted-threshold voltage to an original value :00-17:20 Polysilicon Thin Film Transistors on Spin-coated Polyimide Layer for Flexible Electronics A. Pecora, L. Maiolo, M. Cuscuna`, D. Simeone, A. Minotti, L. Mariucci, and G. Fortunato (IFN-CNR, Italy) We developed a non self-aligned poly-silicon TFTs fabrication process at two different temperatures on spin-coated polyimide layer above Si- wafer. After TFTs fabrication, the polyimide layer was mechanically released from the Siwafer and the devices characteristics were compared. In addition self-heating and hot-carrier induced instabilities were analysed. 42 IMID :50-16:15 [Invited] OTFT Materials Containing Fused Aromatics J. Park, Q. H. Zhao, M.-H. Park, T. Kim, and S. K. Kwon (Gyeongsang Nat l Univ., Korea) Organic semiconductors have been extensively investigated due to the potential application in a variety of electronic devices. Organic thin film transistors (OTFTs) have attracted much attention as alternatives with low-cost, large-area, and simple device structure to conventional silicon-based one :15-16:40 [Invited] Simultaneous Measurements of Drain-to-Source Current and Carrier Injection Properties of Organic Thin- Film Transistors Y. Majima (Tokyo Inst. of Tech., Japan) Displacement current (Idis) and drain-to-source current (IDS) are evaluated using the simultaneous measurements of source (IS) and drain (ID) currents during the application of a constant drain voltage and a triangular-wave gate voltage (VGS) to top-contact pentacene thin-film transistors :40-17:00 Using Natural Graphite Heat Spreaders to Increase CCFL LCD Operating Temperatures J. Norley, G. D. Shives, B. Reis, and J. Schober (GrafTech Intl. Ltd., USA) A natural graphite heat spreader increased the upper operating temperature limit of a CCFL backlit LCD television. A 0-80W heat source simulated additional electronics. Without the heat spreader, internal circuitry shut-down at ~30W; no shut-down occurred >80W with a heat spreader. Environmental chamber performance testing verified improved brightness, temperature uniformity, and operating range :00-17:20 Field Emission-Back Light Unit Fabricated using Carbon Nanotube Emitter H. S. Kim, J. W. Lee, S. K. Lee, C. S. Lee, K. W. Jung, J. H. Lim, J. W. Moon, M. I. Hwang, I. H. Kim, Y. H. Kim, B. G. Lee, Y. C. Choi, H. R. Seon, S. J. Lee, and J. H. Park (Samsung SDI Co. Ltd., Korea) Field emission-back light unit (FE-BLU) was fabricated using carbon nanotube emitter. Local dimming and local brightening were achieved, resulting in high contrast ratio. In addition, the motion blur phenomenon, one of the serious problems of liquid crystal display (LCD) with cold cathode fluorescent lamp (CCFL)-BLU, was removed from LCD-TV using FE-BLU. August 27-31,

25 August 28 (Tuesday) Room Display Measuring & Analysis System August 29 (Wednesday) Room LC Technologies Chair A. Maaninen (VTT, Finland) Chair H. Gleeson (Univ. of Manchester, UK) Co-Chair G. -D. Lee (Dong-A Univ., Korea) :50-16:10 Advanced Array Test Sensor J.-H. Lee, T. Pye, and P. Maxton (Photon Dynamics, USA) This paper will discuss the latest results from an advanced array test system, using newly developed sensor technology. A comparison of detection results between old and new generation products will be shown along with a discussion of the advantages of the new, higher signal to noise ratio detector :10-16:30 In-line Automatic Defect Inspection and Repair Method for TFT-LCD Production H. Honoki, T. Arai, T. Edamura, K. Yoshimura, and N. Nakasu (Hitachi Ltd., Japan) We have developed an automated circuit defect inspection and repair method that can be used to improve the yield ratio of TFT-LCD. The method focuses on correcting resist patterns after the development process to ensure shape regularity. We built a prototype system and confirmed that the method is valid :30-16:50 Twisted Nematic LC Modulator for TFT Array Inspection B. S. Bae (Hoseo Univ., Korea), D. H. Park, H. K. Lee, S. E. Lee (Merck Advanced Technologies Ltd., Korea), S. H. Kim, D. H. Jeong (LG Electronics Inc., Korea), and B. G. Rho (Sesim Photonics Tech., Korea) A twisted nematic type liquid crystal electro-optic modulator (TN-LC modulator) was developed. The modulator used single polarizer and the reflection on-off ratio was maximized by optimization of twist angle and retardation of liquid crystal cell. The TN-LC modulator shows better sensitivity and response time than conventional liquid crystal modulator :50-17:10 Improve the Gamma Variation by Monitoring the Angle of the Polarizer Absorption Axis C.-W. Wu, C.-J. Huang, C.-C. Hu, and Y.-L. Cheng (Chunghwa Picture Tubes, Ltd., Taiwan) Gamma curve is one of the most important optical performance characteristics of a liquid crystal display. The gamma curve is affected by the angle of the polarizer absorption axis. When the crossed angle between the two polarizers turns larger, gamma values will decrease :00-09:25 [Invited] Surface Modification Method for Controlling Liquid Crystal Alignment H.-R. Kim (Kyungpook Nat l Univ., Korea), J.-Y. Song, K.-S. Bae, and J.- H. Kim (Hanyang Univ., Korea) We propose a soft-lithographic patterning method for producing a multidomain liquid crystal (LC) alignment. The LC alignment polyimide layers are periodically patterned in the pixel boundaries by a micromolding-in-capillaries method :25-09:50 [Invited] Carbon-Nanotube Doping in Liquid Crystals of Display Interest W. Lee and H.-Y. Chen (Chung Yuan Christian Univ., Taiwan) Recent studies in the literature have shown that it is possible to overcome the limitations of the physical properties of liquid crystals by the doping of carbon nanotubes. Although still in its infancy, the potential of such a new approach for opportunities in display applications should not go unnoticed :50-10:15 [Invited] Lyotropic Chromonic Liquid Crystals: Effects of Additives and Optical Applications H. S. Park, L. Tortora, R. M. Vasyuta, A. B. Golovin, E. Augustin, D. Finotello, and O. D. Lavrentovich (Kent State Univ., USA.) We describe effects of ionic and neutral additives on phase and structural behavior of the lyotropic chromonic liquid crystals used in preparation of optical elements such as polarizers and compensators. 44 IMID 2007 August 27-31,

26 August 29 (Wednesday) Room PDP Materials and Manufacturing Process Chair Y. -S. Kim (Hongik Univ., Korea) Co-Chair C. -H. Moon (Hoseo Univ., Korea) August 29 (Wednesday) Room OLED Process Chair R. Visser (Vitex, USA) :00-09:25 [Invited] Recent Advances with the 3M PDP High Resolution Rib Replication Process P. McGuire (3M Company, USA), J. C. Cha, H. Kikuchi, and A. Yoda (Sumitomo 3M Ltd., Japan) 3M has developed a Precision Replication Process for the production of PDP Barrier Ribs and other display devices. This process, is fast, clean and capable of producing very high resolution (FHD and beyond), high aperture ratio and fine cell structures. Recent advances in materials and process features will be discussed :25-09:45 High Precision Molding Process for Barrier Ribs of PDP by using a Soft Mold and a Green Sheet S.-M. Ryu (KAIST, Korea), L. S. Park (Kyungpook Nat l Univ., Korea), and D.-Y. Yang (KAIST, Korea) In this paper, high precision molding process was developed using a soft mold to fabricate fine closed-types of the barrier ribs for PDP. A green sheet was employed to fabricate the barrier ribs in this process. An optimal forming load which would not fracture the soft mold was also determined :45-10:05 ICCD Observation on Discharge Characteristics of 42-in. AC Plasma Display Panel Fabricated by Vacuum Sealing Method C.-S. Park, H.-S. Tae (Kyungpook Nat l Univ., Korea), Y.-K. Kwon, E. G. Heo, and B.-H. Lee (Samsung SDI Co. Ltd., Korea) The vacuum sealing method is adopted to minimize the residual impurity gas by enhancing a base vacuum level, and the resultant changes in the reset, address, and sustain discharge characteristics, such as a firing voltage, IR emission, and ICCD image, were examined in comparison with the conventional sealing method in the 42-in. AC- PDP. 46 IMID :00-09:25 [Invited] Scaleable, Cost Effective Display Manufacturing Technology Based on White OLED J. R. Buntaine (Eastman Kodak Company, USA) and G. Rajeswaran (Eastman Kodak Company & Kodak Japan Ltd., Japan) The AMOLED industry must compete with AMLCD displays by standardizing scaleable technology platforms that deliver display- performance and manufacturingcost goals. Kodak White OLED device architectures have the potential to achieve the best performance and cost tradeoffs. We describe the building blocks necessary for delivering effective AMOLED mass production technologies :25-09:45 High Control Alkali & Alkaline-earth Metal Sources for OLED Devices A. Bonucci, J. M. Bertolo, M. Riva, C. Carretti, S. Tominetti (SAES Getters S.p.A., Italy), S. H. Kim (Seoul Nat l Univ., Korea), and J. Y. Lee (Dankook Univ., Korea) Electron injection improvement in OLED organic layers can be obtained by their doping or using alkali metals as EIL. Common handling problems can be solved by an innovative metal dispensing technology to ensure controlled layers. Thickness and deposition rate of EIL during the process have been explored to optimize device perform :45-10:05 Enhanced Control of OLED Deposition Processes by OVPD M. Schwambera, N. Meyer, D. Keiper, M. Heuken (AIXTRON AG, Germany), S. Hartmann, W. Kowalsky (TU Braunschweig, Germany), A. Farahzadi, P. Niyamakom, M. Beigmohamadi, and M. Wuttig (RWTH Aachen Univ. of Technology, Germany) The enhanced control of OLED deposition processes by Organic Vapor Phase Deposition (OVPD is discussed. OVPD opens a wide space of process control parameters. It allows the accurate and individual control of deposition layer properties like morphology and precise mixing of multi-component layers (codeposition) in comparison to conventional deposition manufacturing processes :05-10:25 Recent Advances in Performance of Solution Processed Small Molecule OLEDs at DuPont Displays D. D. LeCloux (Dupont Displays, USA) We describe the DuPont Displays full color OLED printing and materials technologies. The process is more cost-effective and scalable than thermal evaporation through shadow masks. The materials lifetime is sufficient for most portable applications and is nearing that required for stationary displays. Recently, 4.3 WQVGA displays were demonstrated. August 27-31,

27 August 29 (Wednesday) Room E-paper/Flexible LCD August 29 (Wednesday) Room BLU Components & System Technology Chair M. Auch (IMRE, Singapore) Chair S. K. Lim (Dankook Univ., Korea) Co-Chair G. Cho (Kwangwoon Univ., Korea) :00-09:25 [Invited] Advances in Microencapsulated Electrophoretic Displays M. McCreary (E Ink Corp., USA ) E Ink microencapsulated electrophoretic displays are now in volume production. Improved performance commercial electrophoretic films have been introduced, while at the same time even greater performance improvements have been demonstrated in the research laboratory :25-09:50 [Invited] Active-matrix Flexible Display on Plastic Substrate Fabricated by Glass Line C.-C. Lee, Y.-H. Yeh, and T.-M. Lee (ITRI, Taiwan) A pure polyimide substrate and polyimide substrate with nano-silica additive have been formed on glass by coating. The a-si:h TFT arrays have been formed on such polyimide substrate for driving TNLCD :50-10:10 New Structure of Rigid Spacers for Tight Bonding of Two Plastic Substrates in Plastic LCD H. Choi, S.-J. Jang, J.-H. Bae, Y.-S. Choi (Hanyang Univ., Korea), S.-l. Kim, S.-S. Shin (Samung Electronics Co. Ltd., Korea), and J.-H. Kim (Hanyang Univ., Korea) We have developed tight bonding of plastic LCD with new rigid spacer. We designed structures to collect UV or thermal epoxy placed on the top of rigid spacer spontaneously by capillary effect. We confirmed that tight bonded plastic LCD has a good adhesion without induced defects and a high mechanical stability against the various external deformations :10-10:30 Writable Cholesteric Liquid Crystal Display and the Algorithm Used to Detect its Image D.-W. Lee, J.-W. Shiu, Y.-A. Sha, and Y.-P. Chang (ITRI, Taiwan) Writable Cholesteric Liquid Crystal Display and the algorithm used to detect its image were developed. We could use any hard tip, ex: the tip of a forefinger, to directly write an image on the surface of Cholesteric Liquid Crystal Display (CHLCD). By measuring the capacitance of one pixel of test cell (12mm 15mm/ 1x1), F-state or P-state could be detected. By measuring the capacitance of one pixel of 4.1 CHLCD (241um 241um/ ), F-state or P-state could not be detected, due to the effect of parasitic capacitance. Therefore, high frequency measurement and the algorithm were developed to detect the image on CHLCD :00-09:25 [Invited] Intelligent Backlighting System for LCD TV J. P. Sanchez (CEYX Technologies, USA) and S. Lim (Dankook Univ., Korea) A new current control technique called Amplitude Shift Modulation (ASM) for cold cathode fluorescent lamps (CCFL) has been developed. This new technique sets and continuously controls the current of each individual CCFL in an LCD backlight lamp array :25-09:50 [Invited] Influence of Glass Tube Dielectrics on the New Generation of External Electrode Fluorescent Lamps G. Cho (Kwangwoon Univ., Korea) An EEFL with the sodium free alumino-silicate glass of high K and low tan**, has been investigated. As compared with borosilicate and the soda-lime EEFLs, the luminous efficiency as well as the pinhole stability of new EEFLs improves remarkably without blackening of NaHg :50-10:10 High Brightness LED BLU for Large Size LCD TV Y. -S. Choi, S. J. Yu, D. S. Kim, C. K. Chung, and J. H. Lee (Itswell, Korea) 48 IMID 2007 August 27-31,

28 August 29 (Wednesday) Room Film & Patterning Process Technology August 29 (Wednesday) Room LCD Mode Chair J. Attard (Xaar, UK) Co-Chair D. H. Shin (Viatron Tech., Korea) Chair J. West (Kent State Univ., USA) Co-Chair Y. -M. Lee (Hanyang Univ., Korea) :00-09:25 [Invited] Through Flow Technology - Enabling Highly Reliable Inkjet Manufacturing of Flat Panel Displays J. Attard (Xaar Plc, UK) Through Flow Technology offers unparalleled advantages for the manufacturing of flat panel displays using inkjet technology, including: outstanding reliability, self-maintenance, self-priming and simple set up. The Xaar 1001 GS6 is the first product incorporating this technology. The concept and test results will be presented :25-09:45 Theoretical Investigation of Jetting and Wetting Phenomena for the Fabrication of TFT LCD Color Filters D.-Y. Shin (KIMM, Korea) and K. A. Brakke (Susquehanna Univ., USA) Although years of trials for the fabrication of TFT LCD color filters with the piezo Drop-On-Demand (DOD) inkjet printing technology have been made, the underlying physics of jetting and wetting has not been fully understood. In this study, the key engineering issues, jetting and wetting, are investigated with mathematical models :45-10:05 Color Filter Pattern Generation by Screen Printing Y.-J. Choi (Zeus Co. Ltd., Korea), T.-M. Lee (KIMM, Korea), S.-Y. Nam (Pukyung Nat l Univ., Korea), Y.-S. Kim (KIMM, Korea), D.-Y. Na (Pukyung Nat l Univ., Korea), C.-W. You (Zeus Co. Ltd., Korea), D.-Y. Shin, K. Kim (KIMM, Korea), and K.-I. Jung (Zeus Co. Ltd., Korea) We present color filter which is patterned by screen printing method. Analysis of screen printing process, screen printing system, experiment for uniform printing in large area, characteristics of screen printed CF are investigated. The screen printed color filter is very cost- effective in respect of manufacturing facility and ink usage :50-11:15 [Invited] Advanced-MVA (A-MVA) Mode for High Quality LC Displays Y.-P. Huang (Nat l Chiao Tung Univ., Taiwan), W.-K. Huang, C.-H. Tsao, J.-J. Su, H.-L. Hou, P.-C. Liao, C.-Y. Chiu, and C.-Y. Lee (AU Optronics Technology Center, Taiwan) Advanced-MVA (A-MVA) for LCD-TV application was proposed to yield high performance LCD-TV. By utilizing Additional Refresh Technology (ART), which has 2-TFTs but with single source and gate line only. The A-MVA can yield low color washout, fast response, and optimized brightness. AMVA has become the promising solution of advanced LCD-TV panels for massproduction :15-11:35 Viewing Angle Switching of Tristate Liquid Crystal Display C. P. Chen (Pusan Nat l Univ., Korea), C. G. Jhun (Hoseo Univ., Korea), T.-H. Yoon, and J. C. Kim (Pusan Nat l Univ., Korea) A tristate liquid crystal display characterized by two distinct dark states and one bright state has been presented. These two dark states contribute to two different viewing angles. We demonstrate a single panel of vertically aligned cell whose viewing angles can be directly selected from two sets of driving voltage :35-11:55 Pixel Design for Improving Transmittance in OCB LCD K. C. Lee, Y. A. Sha, P. J. Su, C. H. Hsieh, K. H. Chang, C. C. Hsiao, S. Y. Fuh, W. Y. Cheng, Y. C. Liao, J. C. Yang, K. L. Lo, D. W. Lee, Y. P. Chang, and J. W. Shiu (ITRI, Taiwan) Two new cell structures for optical compensated bend were proposed. There are two groups of slit electrodes, which are driven by two different signals corresponding to the entire electrode as common electrode. The transmittance was enhanced. Compared with the traditional OCB mode, the increment of the transmittance of each kind is about 115% and 30% :55-12:15 Viewing Angle Switching of a Liquid Crystal Panel by using 3-terminal Electrode Structure Y.-H. Kwon, J.-I. Baek, J. C. Kim, and T.-H. Yoon (Pusan Nat l Univ., Korea) We propose a method to achieve both WVA and NVA characteristics with a single LC panel and a single backlight system. We could control the viewing angle of a single LC cell by using the horizontal or vertical alignment of LC for the dark state at the front. 50 IMID 2007 August 27-31,

29 August 29 (Wednesday) Room Display Electronics I Chair C. -W. Kim (Inha Univ., Korea) Co-Chair Y. Matsueda (Samsung SDI Co., Ltd., Korea) :15-12:35 New S-PVA Technology for Advanced LCD Performance Y. S. Um, S. B. Park, H. Kim, H. R. You, J.-j. Lyu, K.-H. Kim, and S. S. Kim (Samsung Electronics Co., Ltd., Korea) A New S-PVA which is named as CS S-PVA LCD mode is proposed. CS S- PVA controls the voltage ratio between sub pixels by sharing system, resulting in improved off-axis image quality and transmittance increase without any side effects. Moreover, the new S- PVA LCD mode is free of image-sticking :50-11:15 [Invited] Technology Trend and Requirement of Mobile Displays using Low-Temperature Poly-Si (LTPS) Technologies O.-K. Kwon (Hanyang Univ., Korea) A lot of research for system-on-panel (SOP) have been done to integrate display systems including data driver, gate driver, timing controller, DC-DC converter, and smart functions such as embedded touch screen, ambient brightness sensing and luminance control, finger printing on the glass :15-11:35 Motion Blur Reduction based on Motion Compensation J.-H. Park, Y.-J. Kim, M. Park, T. Amino, J. Oh, N. D. Kim, and S. S. Kim (Samsung Electronics Co. Ltd., Korea) Motion-estimation/motion-compensation provides superior motion picture quality but its huge computation load results in high cost. Impulsive driving is a cost-effective solution but it suffers from large flicker and brightness loss. Motion compensated impulsive driving technology has been developed to achieve high motion picture quality in a cost-effective implementation by combining ME/MC and impulsive driving :35-11:55 Design of Line Memory with Low-temperature Poly-silicon (LTPS) Thin-film Transistor (TFT) for System-on-Glass (SoG) J. Choi, K. Min, and C. Yoo (Hanyang Univ., Korea) A 12k-bit SRAM has been developed for line memory of system-on-glass (SoG) with low-temperature-poly-silicon (LTPS) thin-film-transistor (TFT). For accurate sensing even with large mismatches in the characteristics of LTPS-TFT, mismatch immune sense amplifier is developed. The SRAM shows 30ns readaccess-time with 7V-supply voltage while dissipating 4.05mW and 1.75mW for write and read operation :55-12:15 PHUND (Portable Head Up Navigation Display) for a Motor Vehicle S. C. Shin, S. H. Hahn, Y. Chi, T.-J. Ahn, H. Choi, T. S. Park, and S. T. Kim (LG Electronics Inc., Korea) We have succeeded in designing a PHUND (portable head up navigation display), which has a compact system with a MD panel and full color display device using RGB LED sources. The PHUND has been developed as an alternative to conventional built-in type HUD system targeting the high volume aftermarket with an affordable price. 52 IMID 2007 August 27-31,

30 August 29 (Wednesday) Room OLED Materials August 29 (Wednesday) Room Flexible Substrate and Passivation Chair G. Rajeswaran (Kodak, USA) Co-Chair S. K. Kwon (Kyungsang Nat l Univ., Korea) Chair R. Visser (Vitex Systems, USA) :50-11:15 [Invited] Full-Color Phosphorescent OLEDs: Maximizing Performance Today for Small-Area Portable Products and Tomorrow for TVs J. J. Brown, V. I. Adamovich, B. Ma, B. D Andrade, R. C. Kwong, and M. S. Weaver (Universal Display Corp., USA) Phosphorescent OLED technology is a core technology driver for OLED display and lighting products due to the inherent efficiency advantages. We present recent results in our continued advancements of PHOLED power efficiency and operational stability with focus on narrowing emission line-width, reducing voltage, and overall design for maximizing lifetime :15-11:40 [Invited] Development of P-OLED Materials for Displays and Lighting S. Brown (Sumation Co. Ltd., UK), M. Cass, N. Conway, I. Grizzi, M. McKiernan, M. Roberts (CDT Ltd., UK), Y. Tsubata, C. Sekine, T. Yamada (Sumitomo Chemical Co. Ltd., Japan), and R. Wilson (CDT Ltd., UK) Rapid progress has been made in the development of Light Emitting Polymer materials for display and lighting applications. This presentation focuses on: - Degradation studies that have led to the design of new materials, - Recent results for red, green, blue, and white polymers, - Challenges of formulating inks that can be used in a production environment :40-12:00 Hole Transfer Layer P-doped with a Metal Oxide for Low Voltage Operation of OLEDs W.-J. Shin, J.-Y. Lee, J.-C. Kim, T.-H. Yoon (Pusan Nat l Univ., Korea), T.-S. Kim, and O.-K. Song (Samsung SDI Co. Ltd., Korea) V2O5 was tested as a p-dopant for lower operating voltage and higher stability of OLEDs. Low voltage and high stability were achieved using this doping layer. It can be separated to bulk and interface contributions and the latter is a more dominant factor both of operation voltage and stability :00-12:20 Synthesis and Characterization of Novel Blue Materials based on Anthracene Derivatives for High Efficient OLED Q. H. Zhao, S.-O. Jung, D.-M. Kang, Y.-H. Kim, and S.-K. Kwon (Gyeongsang Nat l Univ., Korea) Novel blue materials based on anthracene derivatives were synthesized by Grignard reaction, the Suziki coupling reaction, etc. They showed excellent thermal stability and emitted bright blue light, which will been used for OLED and expected to obtain high efficiency and good color purity :50-11:15 [Invited] Flexible Ultra-high Gas Barrier Substrate for Organic Electronics M. Yan, A. G. Erlat, R.-a. Zhao, B. Scherer, C. Jones, D. J. Smith, P. A. McConnelee, T. Feist, and A. Duggal (General Electric Global Research Center, USA) GE has developed a plastic substrate technology comprised of a high- heat polycarbonat substrate film with transparent coating package that provides the ultrahigh barrier to moisture and oxygen, and chemical resistance to solvents. This contribution will update recent progresses made at GEGR on R2R PECVD process development and UHB performance on various high heat Plastics Films :15-11:40 [Invited] Commercializing Flexible Substrates for Displays and Lighting-Challenges and Opportunities M. Auch, S. Ramadas, and C. S. Jin (IMRE, Singapore) Substrates that are thin, flexible, lightweight and durable are fast becoming a crucial component of the printed electronics industry. The major market segments are identified as Displays and Lighting, orfid, signage, backplanes and TFPV. Finding the right partners and working together to identify and address the challenges will be key factors for successful commercialisation of flexible barrier substrates :40-12:00 The Impact of Thermal Stress, Mechanical Stress and Environment on Dimensional Reproducibility of Polyester Film during Flexible Electronics Processing W. A. MacDonald, R. Eveson, D. MacKerron, R. Adam, K. Rollins, R. Rustin, M. K. Looney, J. Stewart, and K. Hashimoto (DuPont Teijin Films, UK) DuPont Teijin Films TM (DTF) have developed engineered substrates specifically for the flexible electronics market. Teonex Q65 and Melinex ST506/504 are biaxially oriented crystalline polyesters with the option of planarised surfaces are emerging as competitive materials for the base substrate in OLED displays and active matrix backplanes. Given the demanding dimensional reproducibility requirements in the display applications, it is critical to control the several factors that can influence the film distortion to achieve the ultimate performance that can be achieved with the base substrate. 54 IMID 2007 August 27-31,

31 August 29 (Wednesday) Room New Materials and Processing Technology for FPD Chair J. S. Ro (Hongik Univ., Korea) :00-12:20 Silicon Carbide Barrier Technology to Enable Flexible OLED Displays S.-J. Kim, L. Zambov, K. Weidner, V. Shamamian, and G. Cerny (Dow Corning Corp., USA) This paper provides an overview on the characteristics of a-sic:h barrier film deposited for flexible display applications. Key characteristics such as high crack resistance, high thermal/hydro stability, excellent adhesion to the polymer substrate, as well as very low permeance has been demonstrated. The excellence of this barrier film has been shown from competitive analysis compared with other barrier coating materials. Finally, flexible Polymer Light Emitting Diode (PLED) test pixels have been fabricated on the barrier coated plastic substrate, demonstrating the viability of the device with lifetime data :50-11:15 [Invited] Joule-Heating Induced Crystallization (JIC) of Amorphous Silicon Films W.-E. Hong (Hongik Univ., Korea), J.-Y. Lee (EnSilTech Corp., Korea), B.- K. Kim, and J.-S. Ro (Hongik Univ., Korea) An electric field was applied to a conductive layer to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Poly-Si was produced via Joule heating within the range of a millisecond. Uniformly distributed grains were obtained using this process :15-11:35 Ink-Jet Printing Technology for Color Filter Z.-J. Jian, W.-J. Liou, H.-M. Lin (Tatung Univ., Taiwan), Y.-C. Lo, P.-Y. Liu, J.-M. Wang, and H.-A. Li (Chunghwa Picture Tubes, Ltd., Taiwan) It is a revolutionary technology of making color filters by ink-jet printing. The difficult reason of this method is that it is a merger technology of many fields. There must be perfect orientation systems, designed capacity and production equipment of automatically controlled printing head. Moreover, accurate ink with modification is also needed :35-11:55 Ultrafine ITO Nanoparticle for Ink Jet Printing S.-J. Hong, Y.-H. Kim, and J.-I. Han (KETI, Korea) Ultrafine Indium tin oxide (ITO) nanoparticle was successfully fabricated by low temperature synthetic method (LTSM). Mean size of ITO nanoparticle is 5 nm, and uniformly dispersed with (222) orientated cubic structure. Using the nanoparticle, ITO thin film with good optical and electrical properties was fabricated by inkjet printing :55-12:15 High Extraction Efficiency of Photonic Crystal Microcavity GaN based Light Emitting Diode M. Cho, K. Moon, H. Han (POSTECH, Korea), J. Yoon, B. Jeong, J. K. Shin, and I. Chung (LG. Phillips LCD Co., Ltd., Korea ) We have demonstrated that the light extraction efficiency of GaN based light emitting diodes (LEDs) can be significantly enhanced by using photonic crystal and microcavity (PCMC) effects. It was found that the extraction efficiency of the PCMC-LEDs is 9.5 times larger than that of the normal LEDs. 56 IMID 2007 August 27-31,

32 August 29 (Wednesday) Room Driving Methods & System August 29 (Wednesday) Room 314 FPD Standardization Forum Chair B. -K. Ju (Korea Univ., Korea) :50-11:15 [Invited] Field Emission Display with Design Elements for Control of Uniformity, Color Purity, Luminance, and Invisible Spacers E. M. Howard, B. F. Coll, K. A. Dean, M. R. Johnson, S. V. Johnson, J. E. Jaskie, and H. Li (Motorola Inc., USA) A solution for carbon nanotube based field emission displays has been designed and built. The solution makes use of structure layout to control electron beam trajectories, uniformity by use of ballasting, emission anomalies eliminated by selective carbon nanotube growth and invisible spacers to maintain the vacuum gap :15-11:35 A Study on Phosphor Activation and Persistence for High Performance Driving 20 Carbon Nanotube Backlight Units C.-N. Huang, C.-C. Liang (ITRI, Taiwan), S.-Y. Chung, C.-M. Lai (Nat l Tsing Hua Univ. China), B.-N. Lin, Y.-C. Jiang, C.-C. Lee (ITRI, Taiwan), and C.-T. Pan (Nat l Tsing Hua Univ., China) For high performance driving carbon nanotube backlight units, their phosphor must be well studied. This paper experimentally evaluates their activating speed and persisting duration properties. They are proven to be the most efficiency related factors. High performance driving schemes are derived from them and implemented in this paper :35-12:00 [Invited] Fabrication and Driving of Active-Matrix Field Emission Display Y.-H. Song, J.-W. Jeong, D.-J. Kim, J. Kang, and K.-I. Cho (ETRI, Korea) The active-matrix field emission display (AMFED) was fabricated by integrating carbon nanotube emitters on a-si thin-film transistors. Also, the tapered macrogate was adopted for high immunity to a high anode voltage and strong electron beam focusing. The fabricated AMFED was successfully driven with a low voltage of below 15 V :00-12:20 Effect of Liquid Surface Treatments on Field Emission Properties of Carbon Nanotube Cathodes J.-E. Lee, Y.-J. An, H.-C. Shin, W.-S. Chung, and Y.-R. Cho (Pusan Nat l Univ., Korea) CNT cathodes having a trench structure similar to the structure of the triodetype cathode were successfully fabricated by a screen- printing method. The CNT cathodes prepared by the liquid method showed a turned-on field of 1.4 V/um. The emission current density was about 3.1 ma/cm 2 at the electric field of 3 V/um. Opening Address 14:20-14:25 Jong-Duk Lee (Professor, Seoul Nat l Univ., Korea) Welcome Address 14:25-14:30 (KATS, Korea) 14:30-15:10 Display Standards Impact on TV Energy Efficiency Larry Weber (President, SID, USA) High Definition Television (HDTV) is now clearly the world s largest market for displays. This display standards work will have a major impact on lowering the world energy usage by giving manufacturers and regulators the standard measuring method needed to work together to significantly lower TV set power consumption. 15:10-15:50 Evaluation Index for Image Qualities Chang-Soon Kim (Researcher, KRISS, Korea) Image quality may be measured with different scales by the kinds of the use of displays. In this presentation we want to introduce some out line for the evaluation index for Image qualities. To set up the evaluation index, the visual algorithm and the evaluation model for image quality are need. And some psycho-physical methods must be used. Coffee Break 15:50-16:10 16:10-16:50 ICDM the new, advanced Display Measurement Standard Joe Miseli (Chairman, ICDM, USA) ICDM(International Committee for Display Metrology) which is newly derived from VESA flat panel display metrology standard and belongs to the part of SID. This unit talks about ICDM s role, organization, goals and activity on display metrology standards. Also it introduces multiple parameters of display metrology such as test patterns, subjective analysis and measurement items of LCD, PDP, OLEDs 58 IMID 2007 August 27-31,

33 August 29 (Wednesday) Convention Hall II Poster Session I 16:50-17:30 Practical Standardization in Display Jong-Seo Lee (Senior Research Engineer, Samsung Electronics Co., Ltd., Korea) Current Flat Display Standards of metrology and ergonomics are limited only in impractical test conditions such as dark room condition. Also, those standards do not take into account of human visual perception characteristics which are very important in display applications. Here, the human visual perception characteristics are introduced to make a practical standardization of displays including future displays. P1-1 Thermal Reaction of Cinnamate Oligomers and Their Effect on the Orientational Stability of Liquid Crystals H. Hah, S.-J. Sung, and J.-K. Park (KAIST, Korea) Cinnamate groups are well-known for dimerization reaction on exposure to ultraviolet irradiation and thermal reaction after being heated. We investigated the thermal crosslinking of cinnamate oligomers. The thermal reaction of cinnamate oligomers of low molecular weight is induced more readily by thermal energy compared with that ofcinnamate polymers. P1-2 Homeotropic Liquid Crystal Cell without Vertical Alignment Layers S.-C. Jeng, H.-L. Wang, C.-W. Kuo, Y.-R. Lin, and C.-C. Liao (ITRI, Taiwan) This paper reports that the addition of nanoparticles in the liquid crystal (LC) cell can exhibit the properties of vertical alignment without using alignment layers. The electro-optical properties of this nanoparticles-induced vertical alignment in the LC cell are very similar to the conventional homeotropic LC cell with alignment layers. P1-3 Vertical Alignment Nematic Liquid Crystal Display with Patterned Electrode using Positive Liquid Crystal Materials H. K. Shin, T.-H. Yoon, and J. C. Kim (Pusan Nat l Univ., Korea) We propose a vertical-alignment liquid crystal display with patterned electrodes using a positive dielectric anisotropic liquid crystal. In this structure, the threshold and on-state voltages are reduced compared with previous verticalalignment configuration with positive liquid crystal. P1-4 An Improved Electrode Structure of the Patterned Vertical Alignment Liquid Crystal Cell for High Optical Property Y.-H. Choi, J.-H. Son, J.-S. Yang, S.-H. Ji, and G.-D. Lee (Dong-A Univ., Korea) We propose a novel electrode structure for high transmittance in the Patterned Vertical Alignment (PVA) LC cell. We show the comparison of the calculated optical transmittance between the conventional PVA mode and the proposed PVA mode. From the results, we confirm that the optical transmittance of the proposed structure becomes higher. P1-5 Liquid Crystal Alignment on the Inkjet Printed Polyimide by using New Alignment Method J. Y. Hwang, H. Wonderly, and L. C. Chien (Kent State Univ., USA) 60 IMID 2007 August 27-31,

34 We studied the nematic liquid crystal (NLC) alignment capability with a new alignment method utilizing an inkjet printed polyimide (PI) layer. A good, uniform LC alignment was achieved by the good PI printing using a new alignment method. The pretilt angle generated on the printed PI layer using the alignment method was almost the same as that on printed PI layer using rubbing alignment method. In addition, the good electro-optical performances of the new aligned twisted nematic (TN) cell with printed PI surface was obtained. P1-6 Implementation of Q-Tensor Model into 3-D Finite Element Method (FEM) Numerical Solver W.-J. Shin (Inha Univ., Korea), H.-J. Yoon (Sanayi System Co., Ltd., Korea), and T. Won (Inha Univ., Korea) In this paper, we report our successful implementation of Q tensor model in three-dimensional finite element method (FEM) simulator. The 3D-FEM Q tensor-model-based simulation revealed that the spaly-to- bend transition occurs only at 4V while the vector-model based FEM solver provides an erroneous transition voltage of 8V. P1-7 The Optimization of New Alignment Films in the TNLC for Low Image-sticking J. H. Lee (Samsung Electronics Co., Ltd., Korea), J. Yi (Sungkyunkwan Univ., Korea), H. K. Jung, S. G. Lee, H. Nam, Y. Nam, and S. Choi (Samsung Electronics Co., Ltd., Korea) We introduce a new copolymer alignment film made by bridge-building structure. It is a better film to decrease the image-sticking level in LCD displays. It is noted that the image-sticking was decreased by preventing ion mixing between inter-layers through high hardness. P1-8 Comparative Study on Tensor and Vector Approaches for 3D-FEM Numerical Simulator S. Y. Cho, S. S. Yang (Inha Univ., Korea), H. J. Yoon (Sanayi System Co., Ltd. Korea), and T. Y. Won (Inha Univ., Korea) We report our study on the implementation of Q tensor approach into threedimensional FEM numerical solver. The comparative simulation results demonstrated the possibility of a different director configuration in between Q tensor method and vector method. The comparative study confirmed that Q Tensor implementation is more appropriate for OCB analysis than the vector method. P1-9 Investigation on the Flicker for the Optimal Design of LCD Panel J.-B. Lee and T. Won (Inha Univ., Korea) In this paper, we present a novel method to minimize flicker and gray scale errors automatically across the entire panel by using a compensation of the gray levels of image. It was realized by image simulation with feedback structure. As a result of simulation, we observed flickers from the simulated image. P1-10 The Injection of PDLC Solution Mixture in a Reduced Pressure K.-P. Kim, K.-J. Yang, D.-H. Kim, and B.-D. Choi (DGIST, Korea) Polymer dispersed liquid crystal (PDLC) films consist of micro- droplets of liquid crystals dispersed in a polymer matrix. To make wide area PDLC filled devices, it is necessary to develop reliable method of vacuum injection of PDLC solution instead of the capillary injection. We developed the vacuum injection process to fill a wide area cell. P1-11 Film Compensation based on Discotic Film in Fringe Field Switching Mode S. H. Hwang, B. S. Jung, S. S. Kim, S. H. Lee (Chonbuk Nat l Univ., Korea), and G.-D. Lee (Dong-A Univ., Korea) Film compensation to suppress a light leakage in the dark state of fringe-field switching (FFS) at off normal direction was performed by optimizing retardation value of discotic (negative A) and TAC films including in-plane switching (IPS). The optimized FFS cell exhibits much better performances than other methods do in terms of CR and color uniformity. P1-12 Accurate Measurement of Twist Angle for Analysis of Azimuthal Anchoring Energy and Rubbing Direction of LC Panels of IPS Mode S. H. Baek, B. G. Rho (Sesim Photonics Tech. Co., Ltd., Korea), J. M. Oh, W. S. Dong (Jeil Textile Co., Ltd., Korea), B. K. Yang, and J. S. Kim (Chonbuk Nat l Univ., Korea) A new method is developed for the measurement of twist angles of LC molecules in an LC panel with angular resolution of 0.01degree, which allows measurement of LC panels with small twist angles. P1-13 Advanced Nanoimprinting Material for Liquid Crystal Alignment J. S. Gwag, M. Oh-e, M. Yoneya, H. Yokoyama (Japan Science and Technology Agency, Japan), H. Satou, and S. Itami (Chisso Petrochemical Corp., Japan) To promote liquid crystal application of nanoimprint lithography, a polymer with new concept is proposed. The result of sum-frequency generation (SFG) vibrational spectroscopy proves that this material is a functionally gradient material. This material shows excellent capability as a nanoimprinting material as well as an LC alignment layer. P1-14 Lateral Field Effects on the Horizontal Switching of the Bistable Chiral Splay Nematic Device C. G. Jhun, Y.-J. Kim, K.-S. Min, S. S. Shin (Hoseo Univ., Korea), J. C. Kim (Pusan Nat l Univ., Korea), and S.-B. Kwon (Hoseo Univ. Korea) In this paper, with a bistable curve of the bistable chiral splay nematic liquid crystal (BCSN LC) device, we clarify how the twist-to- splay transition is achieved under a horizontal field. By a sufficiently high horizontal electric field, 62 IMID 2007 August 27-31,

35 the bistable property becomes monostable. The transition can be achieved. P1-15 Synthesis and Properties of Liquid Crystalline Y-shped Molecules Containing 1,3,4-Oxadiazole E.-K. Kwon and E.-J. Choi (Kumoh Nat l Inst. of Technology, Korea) New liquid crystalline Y-shaped molecules containing 1,3,4-oxadizoles have been synthesized with variation of terminal groups (R=H, OCH3 or OC8H17). The structures of obtained compounds were identified by FT/IR and NMR spectrometry, and their thermal and liquid crystalline properties were investigated by DSC and polarizing optical microscope. P1-16 Viewing Angle Switching of Fringe-Field Switching (FFS) Liquid Crystal Display by Optimizing Pixel Structure E. Jeong, M. H. Chin, Y. S. Kim, Y. J. Lim, M.-H. Lee, and S. H. Lee (Chonbuk Nat l Univ., Korea) This Viewing angle control of fringe-field switching (FFS)-LCD using only one panel has been investigated. Viewing angle switching cell is composed of mainand sub-pixel, in which the former has a role of image expression and the latter has a role of viewing angle switching. P1-17 Optimized Electrode Design to Improve Transmittance in the Patterned Vertical Alignment Liquid Crystal Display S. J. Hwang, Y. S. Kim, S. H. Lee (Chonbuk Nat l Univ., Korea), J.-J. Lyu, and K.-H. Kim (Samsung Electronics Co., Ltd., Korea) Patterned vertical alignment (PVA) mode requires multi-domain to exhibit wide viewing angle whereas the transmittance is sacrificed. To overcome the demerit, a fine pattern was formed at folded region in PVA Z-shape electrode structure.thereby transmittance is improved near those fine pattern. P1-18 Synthesis and Characterization of New Azomethine Polymers Containing Bent-Core Mesogen with Sharp Bend Angle E. C. Kim, E.-J. Choi (Kumoh Nat l Inst. of Technology, Korea), C.-W. Ok, and W.-C. Zin (POSTECH, Korea) Six azomethine polymers containing bent-core mesogen were synthesized with variation of a bent structure of central core (1,2- dioxyphenylene or 2,3- dioxynaphthylene), and a lateral halogen substituent (X = H, F or Cl). The properties of the polymers were characterized by FT-IR, NMR spectroscopy, DSC, polarizing optical microscopy, and X-ray diffractometry. P1-19 Electro-optic Characteristics of Carbon Nanotube-doped Liquid Crystal Cell Driven by In-plane Switching and Fringe-field Switching S. H. Shin, S. J. Jeong, E. M. Jo, S. H. Lee (Chonbuk Nat l Univ., Korea), H. Kang, K.-J. Kim, I.-S. Baik (LG.Philips LCD Co., Ltd., Korea), S. H. Jeong, Y. H. Lee (Sungkyunkwan Univ., Korea), H. K. Lee, and S. E. Lee (Merck Advanced Technologies, Ltd., Korea) Effects of carbon nanotube on the in-plain switching and fringe-field switching modes were investigated. The studies show that the CNT- doped LC cells exhibit lower transmittance but faster response time than those in the pure LC cell. Interestingly, the CNT-doped IPS and FFS modes show different characteristic in effects of operating voltage. P1-20 Light Efficiency of Fringe-field Switching Nematic Liquid Crystal Cell Depending on Dielectric Anisotropy Value of a Liquid Crystal J. W. Ryu, J. Y. Lee, J. W. Park, S. H. Lee (Chonbuk Nat l Univ., Korea), and G.-D. Lee (Dong-A Univ., Korea) The light efficiency of fringe-field switching (FFS) mode was found to be dependent on the magnitude of dielectric anisotropy, indicating that the voltage-dependent maximal effective cell retardation value in the on state is a function of magnitude of the dielectric anisotropy of the LC. P1-21 Positive Type Photoresist for Patterning of Interdielectric Layer of TFT Array H.-J. Lee, H.-J. Kim, S. H. Kim, L. S. Park, Y. S. Lee, and G. D. Song (Kyungpook Nat'l Univ., Korea) Synthesis of two photoactive compounds containing core imide moiety was carried out for an application to interdielectric layer in TFT- LCD array. An aqueous alkaline developable polymer matrix was synthesized by free radical copolymerization. A positive photoresist formulation was developed utilizing synthesized UV monomers, photoactive compound, binder polymer, sulfactant and alkali developable polymer matrix. P1-22 Experimental and Numerical Study on Anisotropic Phase Separation of Liquid Crystal and Polymer Composites as Cell Gap Variation M. Y. Jin (Image Lab Corp., Korea), J.-H. Bae, and J.-H. Kim (Hanyang Univ. Korea) Cell-gap dependence on anisotropic phase separation was studied. The numerical results showed that the morphology of phase separation depended on cell-gap and material parameters. With numerical simulation and experiments, the optimal range of cell gap in the formation of polymer layer and liquid crystal layer was suggested for given material parameters. P1-23 The Study of the Charge Transport on the Surface Layer of the Patterned Vertical Alignment (PVA) Mode N. Choi (Samsung Electronics Co.,Ltd, Korea), J. You, J. Jung, K. Rhie (Korea Univ., Korea), and S. Shin (Samsung Electronics Co., Ltd., Korea) It is known that the main source of the area image sticking is the ion charge adsorption on the alignment layer. We found out that the adsorption of the ion charge of the liquid crystal in the cell was physisorption, which takes place between all molecules on any surface providing the adsorption force is small. 64 IMID 2007 August 27-31,

36 P1-24 Spatiotemporal Behavior of Excited Xe Atoms Density in Counter Discharged Type AC-PDP Y. J. Hong, P. Y. Oh, S. H. Jeong, J. H. Hong, J. H. Kim, Y. G. Han, S. H. Cho, S. H. Hong, B. H. Hong, and E. H. Choi (Kwangwoon Univ.,Korea) We have measured the excited Xe atoms density in the 1s5 metastable states by laser absorption spectroscopy in counter discharged type AC- PDP. This experiment has shown the characteristic of the excited Xe atoms density which is relation to the visible light efficiency of PDP. The density of counter discharged AC-PDP have measured to be cm -3. The result has been shown to higher value than cm -3 of conventional AC-PD. P1-25 Characteristics of Microplasma Modes in a Plasma Display with an Auxiliary Electrode S. H. Kim, J. H. Mun, and K. C. Choi (KAIST, Korea) Microplasma modes generated in a display cell with an auxiliary electrode were investigated in accordance with various coplanar-gaps and plate-gaps. At plategaps shorter than the coplanar-gap, the mode transition voltage of the auxiliary pulse increased with an increase in the coplanar-gap. At longer plate-gaps, the mode transition voltage of the auxiliary pulse decreased with an increase in the coplanar-gap. P1-26 Studies about Visible Light Distribution in PDP Cells with 3-dimensional Optical Code C. Eom and J. Kang (Dankook Univ., Korea) In order to improve the accuracy of simulated results, new UV source was designed. Previously the optical simulation was performed with the symmetric planar UV source. To design new UV source, UV distribution from the plasma fluid code was implanted to the 3-dimensional optical code to generate the visible light distribution. P1-27 Effect of Self-Erase Discharge on the Luminous Efficacy of Long Gap AC PDPs T. J. Kim, J. C. Jung, H.-Y. Jung, and K.-W. Whang (Seoul Nat l Univ., Korea) We studied the effect of self-erase discharge on the luminous efficacy of ac PDPs. We observed through discharge current analysis to confirm that the selferase discharge occurred mainly between sustain cathode and address electrode, which have an influence on the luminous efficacy. The amount and timing of the selferase discharge was varied to observe its effect on the luminous efficacy. P1-28 IBS Electrode Structure for Enhanced Performance in ac PDP S. H. Yang, J. S. Moon, K. N. Kim, and C. H. Moon (Hoseo Univ., Korea) In this paper, we propose IBS (ITO-BUS Separated) electrode structure. BUS electrode lines are placed apart from the ITO electrode lines, and they are electrically connected with vertical auxiliary electrodes. We varied the lengths of the vertical electrodes as 70, 120, 320um. The highest luminous efficiency and the largest IR emission peak were obtained for 70um length. P1-29 Bendable ac-pdp using Fence-Structured Electrodes on Polyethylene Terephthalate Substrate W. -Y. Choi, C. R. Hong, and Y. -S. Kim (Hongik Univ., Korea) A possibility of manufacturing bendable ac-pdp using aluminum electrode with anodic aluminum oxide dielectric material system on PET film substrate was explored. For this structure, PET film with fence-structured aluminum electrodes was used for front plate and PET film with barrier ribs of UV curable resin for the rear plate. The results demonstrate that it is feasible to manufacture the bendable ac-pdps using those material system and are expected to expand the applications of plasma display panels. P1-30 Observation and Analysis of Address and Sustain Discharges and Related Wall Voltage Characteristics in AC-PDP H. D. Park, H.-S. Tae (Kyungpook Nat l Univ., Korea), M. Hur, S.-H. Park, M. Yoo, and E. G. Heo (Samsung SDI Co., Ltd., Korea) The address and sustain discharge characteristics in plasma display panels (PDPs) are investigated and compared by the optical emission spectroscopy using the ICCD and Vt close-curve analysis. The observations on the xenon (Xe) emission show that the spatial and temporal evolutions in the first sustain discharge are quite different from those in the address and the other sustain discharges. The striation found in the conventional sustain discharge doesn t occur in the first sustain discharge. P1-31 Wall Voltage Transfer Characteristic According to Address Bias Voltage Y. M. Lee and D. C. Jeong (Hoseo Univ., Korea) We report the wall voltage transfer characteristic between sustain electrodes according to the address bias voltage in a 3-electrodes surface discharge type ac PDP by the VT close curve measurement technique. The result shows the change of wall voltage according to the gap voltage variation depends on the address bias voltage. P1-32 Effect of Auxiliary Address Pulse on Face-to-face Sustain Electrode Structure in AC-PDP B.-S. Kim and H.-S. Tae (Kyungpook Nat l Univ., Korea) The discharge characteristics of the face-to-face sustain electrode structure employing auxiliary address pulse are investigated under a sustain driving frequency of 20 khz and various auxiliary address pulse widths (500ns, 1µs, 2 µs) in the 6-in. Test panel (42-in. Full HD grade) with a pressure of 450 Torr and a 4% Xe-content. P1-33 Load Current Prediction Method for a DC-DC Converter in Plasma Display Panel S. Y. Chae, B. C. Hyun, W. S. Kim, and B. H. Cho (Seoul Nat l Univ., Korea) This paper describes a method to predict the load current of a dc-dc 66 IMID 2007 August 27-31,

37 converter.the load current is calculated using the video information of the PDP.The output capacitance of the dc-dc converter can be reduced by utilizing the predicted load current,which results in a cost reduction of the power system in the PDP. P1-34 Relationship between Image Retention and Time Lag in an AC PDP Y. S. Do, C. Jang, and K. C. Choi (KAIST, Korea) Characteristics of dark image retention and address discharge time lag were investigated simultaneously. It was found that reset waveforms with low black luminance did not guarantee lower image retention. Improved address discharge time lag due to modified reset waveforms similarly did not show improved image retention. The address discharge time lag and the image retention are in a trade-off relation. P1-35 Experimental Observation of Temporal Dark Image Sticking in AC PDP with Face-to-Face Sustain Electrode Structure J. H. Kim, C.-S. Park, B.-S. Kim, K.-H. Park, and H.-S. Tae (Kyungpook Nat l Univ., Korea) Carbon nanotubes (CNTs) have used as an electron field emitter of the field emission display (FED) due to their characteristics of high-electron emission, rapid response and low power consumption. However, to commercialize the FED with CNT emitter, some fundamental problems regarding life time and emission efficiency have to be solved. In this study, we investigated the TiO2 coated CNT as a field emitter. P1-36 Synthesis and Electroluminescent Properties of Fluoranthene Derivatives S.-K. Kim and J.-W. Park (The Catholic Univ. of Korea, Korea) As a new fluoranthene derivative, a synthesis of benzo[k] fluoranthene was suggested, so new blue emitting materials, 7,12-diphenylbenzo[k] fluoranthene [DPBF] and 7,8,10-triphenylfluoranthene [TPF] were synthesized. The OLED device that used DPBF as an emitting layer showed high efficiency of 2.11cd/A and the excellent color coordinate value of (0.161, 0.131) in deep-blue region. P1-37 High Efficiency and Long Lifetime for Organic Light- Emitting Diode using New Electron Transport Materials T. Tanaka, M. Sato (Tosoh Co., Ltd.,Korea), H. Aihara, N. Yanai, and T. Yamakawa (Sagami Chemical Research Center, Japan) We demonstrated high power efficiency and long lifetime in organic lightemitting diode (OLED) using new electron transport materials (ETMs). Electroluminescent device with these ETMs showed lower driving voltage than that with Alq3. The device lifetime with a new ETM was 2 times longer than that with Alq3. P1-38 New Green Fluorescent Materials for OLEDs C.-W. Lee, E.-J. Lee, J.-W. Kim, J.-H. Yun (Daejoo Electronic Materials Co. Ltd., Korea), J.-Y. Lee, and M.-S. Gong (Dankook Univ., Korea) We developed new green emitting materials based on the spiro moieties. The introduction of a spiro linkage into the structure of DJGH series lead to a reduction in crystallization tendency and an increase in glass transition temperature. they showed much better emitting efficiency and color purity than commercial host material Alq3. P1-39 Effects of ITO Surface Modification using Self-assembly Molecules on the Characteristics of OLEDs S. Y. Oh and D. H. Kim (Sogang Univ., Korea) We have synthesized 4 -nitrobiphenyl-4-carboxylic acid (NBCA) and fabricated the hole-only device consisting of ITO/NBCA SAM/TPD (1500Å)/Al (500Å) and the organic light emitting diodes (OLEDs) consisting of ITO/NBCA SAM/TPD (600Å)/Alq3 (600Å)/Al (600Å). The prepared hole-only device with NBCA exhibited lower driving voltage than the device with 4-nitrobenzoic acid. P1-40 Novel Bipolar Host Materials for Phosphorescent OLEDs E.-S. Yu, N.-S. Kim, Y.-H. Kim, M.-Y. Chae, and T.-W. Chang (Cheil Industries Inc., Korea) We have developed novel bipolar host materials, designed to have both electron transporting and hole transporting abilities, which show significant increase in luminance efficiency and decrease in driving voltage of green phosphorescent OLEDs. P1-41 The Effect of Plasma Damage on Electrical Properties of Amorphous GalnZnO Film M. Kim, J.-S. Park, J. K. Jeong, J. H. Jeong, T. K. Ahn, H. Yang, H. J. Lee, H.-J. Chung, Y.-G. Mo, and H. D. Kim (Samsung SDI Co., Ltd, Korea) The effect of plasma damage was investigated on amorphous gallium-indiumzinc oxide (a-gizo) films and transistors. Ion-bombardment by plasma process affects to turn semiconductor to conductor materials and plasma radiation may degrade to transistor electrical properties. All damages are easily recovered with a 350 thermal annealing. P1-42 Effect of Thermal Heat Treatment on the Characteristics of Vertical Type Organic Thin Film Transistor using Alq3 as Active Layer and Its Application for OLET S. Y. Oh, Y. D. Kim, and S. K. Hwang (Sogang Univ., Korea) We have fabricated vertical type organic thin film transistor using tris-8- hydroxyquinoline aluminum (Alq3). The effects of the growth control of Alq3 thin layer on the grain structure and the flatness of film surface have been investigated. In addition, we have fabricated light emitting transistor and then investigated electroluminescent properties. 68 IMID 2007 August 27-31,

38 P1-43 Study of White Polymer Electrophosphorescent Lightemitting Diode with Heteroleptic Ir-Complex J. Lee and E. Kim (Hongik Univ., Korea) We demonstrate highly efficient White Polymer Electrophosphorescent Lightemitting Diode using newly developed green and red light emitting heteroleptic iridium complex, Ir- (pq)2tpy, and blue light emitting fluorescent dopant, BczVBi. The best luminous efficiency reached 28cd/A with maximum luminance of 87000cd/m2. The scheme for determining optimum device architecture and dopant concentrations were constructed. P1-44 Synthesis and Electro-optic Properties of Anthracene Derivatives for Blue Emitting OLED Devices. E. J. Park, E. J. Lyu, L. S. Park, S. H. Kim, G. Kwak, and Y. S. Lee (Kyungpook Nat l Univ., Korea) Anthracene derivatives, 9,10trimethylsilylanthr -acene (SA) and bis (2- phenylethynyl)trimethylsilyl anthracene (Si-BPEA) were synthesized and their emission properties were studied with UV and PL spectrometers. The PL maxima of anthracene, SA, bis (2-phenylethynyl)anthracene (BPEA),Si-BPEA were obtained at401, 438, 475, 478nm, respectively. The electro-optical properties OLED devices made with these anthracene derivatives were discussed. P1-45 Characteristics of Directly Sputtered Al Cathode Film using Twin Target Sputtering System for OLEDs J.-M. Moon (Kumoh Nat l Inst. of Technology, Korea), S.-H. Lee (Top Engineering, Korea), and H.-K. Kim (Kumoh Nat l Inst. of Technology, Korea) Characteristics of Al cathode films deposited by using specially designed twin target sputter (TTS) system were investigated. It was found that OLEDs fabricated using TTS system have low leakage current density at reverse bias because of effective confinement of energetic particles during sputtering process. P1-46 Passivation of Organic Light Emitting Diodes with a-sinx Thin Films Grown by Catalyzer Enhanced Chemical Vapor Deposition J.-A. Jeong (Kumoh Nat l Inst. of Technology, Korea), J.-W. Kang (Seoul Nat l Univ., Korea), and H.-K. Kim (Kumoh Nat l Inst. of Technology, Korea) The characteristics of a SiNx passivation layer grown by a specially designed catalyzer enhanced chemical vapor deposition (CECVD) system and electrical and optical properties of OLEDs passivated with the SiNx layer are described. P1-47 Highly Efficient Red Phosphorescent OLEDs Employing a Multifunctional Oligofluorene Host M.-H. Tsai, H.-C. Su, C.-C. Wu, K.-T. Wong (Nat l Taiwan Univ., Taiwan), and W.-R. Li (Nat l Central Univ., Taiwan) High-efficiency red phosphorescent OLEDs employing a novel emitter and a multifunctional oligofluorene host are reported. With qazir (acac) as the red dopant, an external quantum efficiency of 19% and power efficiency of 11 lm/w are achieved. In addition, single-layer devices using such host and dopant materials have efficiencies up to 13%. P1-48 Highly Efficient Light-Emitting PPV Derivatives Containing Polyhedral Oligomeric Silsesquioxanes (POSSs) J.-M. Kang (Kumoh Nat l Inst. of Technology, Korea), H.-J. Cho (KAIST, Korea), J.-H. Eom (Kumoh Nat l Inst. of Technology, Korea), J.-I. Lee (ETRI, Korea), S.-K. Lee, J. Lee, N.-S. Cho, H.-K. Shim (KAIST, Korea), and D.-H. Hwang (Kumoh Nat l Inst. of Technology, Korea) We synthesized a new series of POSSs-based PPVs via the Gilch polymerization. Surprisingly, the luminance efficiency (0.48cd/A) of the binary blend consisting of 5 wt % POSS25-PPV and 95 wt % MEH-PPV was enhanced by a factor of 6.4 compared to that of MEH- PPV, with a maximum brightness of 11,010cd/m 2. P1-49 Characteristics of a Conducting Polymer Anode for Flexible OLED using Screen Printing Method J. W. Huh, Y. M. Kim, Y. W. Park, J. H. Choi (Korea Univ., Korea), J. W. Lee (DPI Solutions, Inc., Korea), J. W. Yang, S. H. Ju, K. K. Paek (Daejin Univ., Korea), and B. K. Ju (Korea Univ., Korea) We report on the fabrication and characterization of an OLED with an anode completed using screen- printable conducting polymer containing PEDOT: PSS. The demonstration of this organic transparent anode for OLEDs shows a good possibility for flexible displays using this polymeric electrode. P1-50 Efficiency Enhancement of Organic Light Emitting Diodes by the Aluminum Oxynitride Buffer Layer H. Park, K. Jang, S. Jung, S. Hwang, J. Lee, K. Lee, K. Park, E. Nam, D. Jung, and J. Yi (Sungkyunkwan Univ., Korea) In organic light emitting diodes (OLEDs), the electrons and holes need to be injected efficiently to obtain the best device performance. This means that a small injection barrier height at the ITO/organic interface is required. In this study, the surface of the ITO anode was treated with an Aluminum oxynitride (AlON). P1-51 Low Voltage Organic Light-emitting Devices with New Electron Transport Layer M.-Y. Ha, S.-Y. Kim, and D.-G. Moon (Soonchunhyang Univ., Korea) We have developed low voltage operating OLEDs with new electron transport layer. The device having a structure of ITO/2TNATA/HTL:Rubrene (1%)/HTL /new ETL/LiF/Al have been used. The voltage for achieving 1,000 cd/m2 was 4.1 V, whereas the turn on voltage for the brightness of 1 cd/m2 was 2.8 V. P1-52 Transparent Organic Light-emitting Devices with CsCl Passivation Layer S.-Y. Kim, C.-j. Lee (Soonchunhyang Univ., Korea), M.-Y. Ha, D.-g. Moon (KETI, Korea), and J.-I. Han (Soonchunhyang Univ., Korea) We have developed the transparent passivation layer for TOLEDs using CsCl layer. The CsCl passivation layer improves the optical transmittance of Ca/Ag 70 IMID 2007 August 27-31,

39 double layer which have used as a semitransparent cathode, resulting in substantial increase of the luminance by the enhanced light extraction out of the cathode surface of the TOLEDs. P1-53 Emission Characteristics of Green OLED with Hole Transport Material X. Gao, J. Y. Park, Y. G. Baek (ELM Co. Ltd., Korea), S. H. Ju, J. W. Yang, B. S. Lee, J. T. Kim, and K. K. Paek (Daejin Univ., Korea) OLED devices with a multilayer structure were fabricated using newly synthesized hole transport materials. We confirmed that ELM229 and ELM339, hole transport materials did not affect the electroluminescence color, and that by adopting this novel hole transport materials, OLEDs with a lower driving voltage but a higher efficiency were developed. P1-54 Electrical Properties of the Molybdenum Oxide Doped Hole Transport Layer J.-Y. Yun, C. Lee, W. J. Song, and Y. J. Sung (Seoul Nat l Univ., Korea) We report on a highly conductive and stable hole transporting layer comprising of N,N -di (1-naphthyl)-N,N -diphenylbenzidine (α-npd) doped with molybdenum oxide (MoO3). Compared to the reference device, the device with MoO3-doped hole transporting material exhibits higher conductivity and thermal stability. The temperature dependence of the current-voltage characteristics are studied for various MoO3 doping concentration. P1-55 Highly Efficient Phosphorescent Polymer OLEDs Fabricated by Screen Printing D. H. Lee, J. S. Choi, and S. M. Cho (Sungkyunkwan Univ., Korea) We demonstrate the use of screen printing in the fabrication of highly efficient phosphorescent polymer organic-light-emitting devices (OLEDs) based on phosphorescent and a host polymer PVK. P1-56 The Triple Layer Anode for Flexible Top Emission Organic Light-emitting Devices S. M. Chung, C.-s. Hwang, J.-I. Lee, S. H. Ko Park, Y. S. Yang, L.-M. Do, and H. Y. Chu (ETRI, Korea) A top emission organic light emitting diode comprising of a triple anode on polycarbonate film/tnata/npb/alq3:c545t/cathodes has been fabricated. The triple layer structure of Cr/Al/Cr allowed for fabrication of a crack-free anode and provided better higher work function than ITO anode. P1-57 Synthesis and Characterization of Heteroleptic Iridium Complex with Phenylpyridine and 5 -methyldiphenylquinoline S.-c. Lee and Y. S. Kim (Hongik Univ., Korea) New heteroleptic tris-cyclometalated iridium complex, Ir (ppy)2 (dpq-5ch3), was prepared, where ppy and dpq-5ch3 represent phenylpyridine and 2 (5 methyl)-4-diphenylquinoline, respectively. The heteroleptic iridium complex shows high luminescence efficiency by the intramolecular energy transfer from the energy absorbing ppy ligands to the luminescent dpq-5ch3 ligand leading to a decrease on quenching or energy deactivation. P1-58 Study on the Touch Screen Panel Based on the Light over Electro Phoretic Display U. C. Choi, H. Y. Jung, C. W. Park, and S. J. Hong (Samsung Electronics Co. Ltd., Korea) EPD have an advantage that is using the bottom glass substrate and the top e- ink sheet. So, it is impossible to apply R or C type TSP that need bottom and top glass plane. We successfully implemented the TSP (Touch Screen Panel) based on the light over the EPD (Electro Phoretic Display). P1-59 Bending Effect of Flexible Liquid Crystal Display Y.-R. Lin, S.-C. Jeng, C.-W. Kuo, C.-C. Liao (ITRI, Taiwan), C.-C. Chen, and J.-T. Shy (Nat l Tsing Hua Univ., Taiwan) The effects of stress on the IZO/PC substrate and the electro-optical properties of a flexible LCD with micro-structure in bending were investigated. It showed that the IZO/PC substrate and the periodic cross spacers are good enough to be employed in the application of the ECB or polarization rotation LC mode. P1-60 Flexible EL Display Printed on a Paper T.-M. Lee, D.-Y. Shin, Y.-S. Kim, C. H. Kim, J. Jo, B.-O. Choi, and D.- S. Kim (KIMM, Korea) This paper presents the fabrication of an electro-luminescence display, which is wholly-printed on a flexible paper substrate. We expect that the printed EL display can be a powerful alternative for general advertisement which is printed only with media ink. P Inch QCIF AMOLED Panel with Ultra Low Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate Y.-H. Kim, C.-H. Chung, J. Moon, D.-J. Park, S.-J. Lee, G. H. Kim, and Y.-H. Song (ETRI, Korea) We fabricated the 3.5 inch QCIF AMOLED panel with ultra low temperature polycrystalline silicon TFT on the plastic substrate. To reduce the leakage current, we used the triple layered gate metal structure. To reduce the stress from inorganic dielectric layer, we applied the organic interlayer dielectric and the photoactive insulating layer. P1-62 Printable Low Work Function Cathode for OLED Devices T. Maaninen, M. Tuomikoski, and A. Maaninen (VTT, Finland) Commercial conductive metal inks are available, but metals used in these have unsuitable work function for efficient OLED device performance. Metals with low work function tend to oxidize easily, which makes it challenging to develop low work function inks. In this research we describe printed low work function Al cathode. 72 IMID 2007 August 27-31,

40 P1-63 Influence an Oxide Layer Thickness on Resistivity of Cu Conductive Film and Ink-jet Printing of Cu Nanoparticle Ink S. Jeong, K. Woo, D. Kim (Yonsei Univ., Korea), S. Lim, J. S. Kim (Samsung Electronics Co. Ltd., Korea), and J. Moon (Yonsei Univ., Korea) We have developed the synthesis method to reduce the surface oxide layer in Cu nanoparticle, which is based on controlling the molecular weight of capping polymer. In addition, we demonstrated how the variation of oxide layer thickness influences the resistivity of conductive Cu film. P1-64 Gate Dielectric based on Organic-inorganic Hybrid Polymer in Organic Thin-film Transistors S. H. Lee, S. Jeong, and J. Moon (Yonsei Univ., Korea) Inorganic-organic hybrid polymer provides various advantages including lowtemperature process, high dielectric constant and direct photo-patterning. The hybrid dielectric was synthesized by the sol-gel process in which an acidcatalyzed solution of Si alkoxide and Zr alkoxide was used as a precursor. The electrical performance of transistors with hybrid dielectric was investigated. P1-65 Investigation of Charge Injection in Organic Thin Film Transistor using Ink-jet Printed Silver Electrodes D. Kim, S. Jeong, S. Lee, D. Jang, and J. Moon (Yonsei Univ., Korea) We fabricated a coplanar type organic thin-film transistors using ink- jet printed silver source/drain electrodes and α,ω- dihexylquaterthiophene (DH4T) which is an active layer. Use of ink-jet printed silver nanoparticle-based metal electrode assists the energetic mismatch with p-type organic semiconductor via modification of their interfacial properties to enable ohmic contact formation. P1-66 Substrate Bonding Technique using the Agar-epoxy Composites for Flexible LCD J.-H. Bae, S.-J. Jang, H. Choi (Hanyang Univ., Korea), S.-I. Kim (Samsung Electronics Co. Ltd., Korea), and J.-H. Kim (Hanyang Univ., Korea) We have proposed novel bonding technique of substrates for developing the flexible LCD with high quality. The gel type mixture of agarose and UV curable epoxy developed to obtain tight bonding ability and enhanced electro-optical characteristic simultaneously. This technique can be used to roll-to-roll process for fabricating the flexible LCDs. P1-67 The Effects of Hydrophobic Buffer Layer Without Losing Dielectric Property on Organic Transistors J.-Y. Song, J.-I. Jung, Y. Choi (Hanyang Univ., Korea), H.-R. Kim (Kyungpook Nat l Univ., Korea), and J.-H. Kim (Hanyang Univ., Korea) The novel buffer layer was spin-coated on the dielectric layer of OTFTs to introduce the hydrophobicity for enhancing the device performance. This functional layer contains the water-proof ingredient to reduce the surface energy and more importantly, does not harm the dielectric property of the insulating layer. P1-68 Double Hole Transport Layers Deposited by Spin-coating and Thermal-evaporating for Flexible Organic Light Emitting Diodes S. L. Chen, S. H. Wang, F. S. Juang, and Y. S. Tsai (Nat l Formosa Univ., Taiwan) The research applied the processes of spin-coating and thermal- evaporating in proper order to deposit the hole transport material N,N -Bis (naphthalen-1-yl)- N,N -bis (phenyl)-benzidine (NPB) on the ITO substrate to make flexible organic light emitting diodes (FOLED) with double hole transport layer. P1-69 The Thermal Annealing Effect on Electrical Performances of a-si:h TFT Fabricated on a Metal Foil Substrate C.-W. Han, W.-J. Nam, C.-D. Kim, K.-Y. Kim, I. B. Kang, I.-J. Chung (LG.Philips LCD Co. Ltd., Korea), and M.-K. Han (Seoul Nat l Univ., Korea) Hydrogenated amorphous silicon thin film transistors (a-si:h TFTs) were fabricated on a flexible metal substrate at 150. To increase the stability of the flexible a-si:h TFTs, they were thermally annealed at 230. The field effect mobility was reduced because of the strain in a-si:h TFT under thermal annealing. P1-70 Formation of Buffer Layer on Mica for Application to Flexible Thin Film Transistors J. S. Oh, S. R. Lee (KAIST, Korea), J. H. Lee (ETRI, Korea), and B. T. Ahn (KAIST, Korea) A buffer layer consisting of SiOx/Ta/Ti has been developed in order to overcome the adhesion and stress problems between poly-si film and mica. Polycrystalline silicon thin film transistor was successfully fabricated on the mica and transferred to a flexible plastic substrate. P1-71 The Analysis of the Characteristics According to Polymer Concentration for Polymer Light Emitting Diode Fabricated on Flexible Substrates W. J. Cho, S. H. Kim, B. H. Kang, D. E. Kim, and S. W. Kang (Kyungpook Nat l Univ., Korea) In this paper, to compare thermal and chemical stabilities of poly- ethyleneterephtalate (PET) and poly-ether-surphone (PES), we fabricated Polymer Light Emitting Diode (PLED) on each substrate and analyzed these characteristics. Moreover, we analyzed the characteristics of the device deposited LiF (1nm) before cathode deposition. P1-72 Organic TFT Fabricated on Ultra-thin Flexible Plastic with a Rigid Glass Support Y. R. Son, S. H. Han, S. H. Lee, K. J. Lee, M. H. Choi, D. J. Choo, and J. Jang (Kyung Hee Univ., Korea) We have fabricated pentacene OTFT on ultra-thin flexible polyimide film with a rigid glass support. Polyimide film of the thickness of 10µm has formed on 74 IMID 2007 August 27-31,

41 glass by spin coating from the solution. After the entire OTFT process, the OTFT exhibited a field-effect mobility of 0.4 cm 2 /Vs. P1-73 Effect of Fe Catalyst on Growth of Carbon Nanotubes by Thermal CVD S.-i. Yoon, S.-T. Heo, S.-S. Kim, Y.-K. Lee, and D.-G. Lee (Kumoh Nat l Inst. of Technology, Korea) The properties of carbon nanotube obtained by thermal chemical vapor deposition (CVD) process were investigated as a function of ammonia (NH3) gas in hydrocarbon gas, Fe catalyst thickness, and growth temperature. P1-74 Electron Field Emission for a Cylindrical Emitter of Single Carbon Nanotube Y.-J. Lee, C.-D. Kim, and H.-R. Lee (Kyungpook Nat l Univ., Korea) We investigated the field emission of single carbon nanotube including the anode effect by calculating the tunneling probability of an electron. The experimental results from this study were in agreement with our theoretical calculations. The constant enhancement factor was calculated using an approximation of the potential barrier. P1-75 Synthesis of Carbon Nanotubes by using Inductively Coupled Plasma Chemical Vapor Deposition at Low Temperature Y. R. Kim, I. Jang, H. J. Cho, H. J. Jeon (Sejong Univ., Korea), J. K. Cho, H. Hwang, B. Y. Kong (System Engineering Mega Solution, Korea), and N. Lee (Sejong Univ., Korea) Carbon nanotubes (CNTs) were synthesized by inductively coupled plasma CVD at 450. CNTs were grown on the 1-nm-thick Fe-Ni-Co with C2H2 and H2 at different pressures and plasma powers. CNTs were grown longer in height as the Hα/CH ratios became lower by decreasing plasma powers and increasing growth pressures. P1-76 Improvement Field Emission Uniformity in Carbon Nanotube Composite using Zinc Nano-Fillers S. Jeon, J.-H. Park, J.-H. Lee, J.-H. Shin, S.-m. Park, A. Prashant, and J.-B. Yoo (Sungkyunkwan Univ., Korea) The improvement in the field emission parameters, luminescent uniformity, degradation rate and half life has been observed for the thin-multi wall carbon nanotube (t-mwcnt) composite, after incorporating the Zn nanoparticles. The Zn nanoparticles (diameter~100±15nm) has been incorporated to synthesize the Zn-t-MWCNT composite. P1-77 Field Emission Properties of Expanded Graphite Composite P. S. Alegaonkar, J. H. Park, S. Y. Jeon, J. H. Shin, A. S. Berdinsky, and J. B. Yoo (Sungkyunkwan Univ., Korea) Field emission properties of expanded graphite composite have been studied. Composite has been synthesized via shear mixing expanded graphite in terpineol and ethyl cellulose. Field emission properties of screen printed composite has been measured at a static applied electric field. The details of the analysis are presented. P1-78 Dispersion of Carbon Nanotube in Polymer Composite and Their Field Emission Superiority J. H. Park, S. Y. Jeon, P. S. Alegonkar, and J. B. Yoo (Sungkyunkwan Univ., Korea) The dispersion of carbon nanotubes in composite and their field emission superiority have been discussed. Four synthesis methods have been studied. The CNT-composite, synthesized by the combination of the chemical and mechanical dispersion routes shows superior dispersion as well as field emission characteristics as compared to other syntheses methods. P1-79 Effect of Current-Aging on Field Emission from Carbon Nanotube Field Emitter Arrays K. S. Kim, J. H. Ryu, C. S. Lee, S. Manivannan, J. H. Moon, J. S. Ahn, J. Jang, and K. C. Park (Kyung Hee Univ., Korea) We studied the effect of current-aging on field emission from carbon nanotubes field emitter arrays (CNT-FEAs) selectively patterned by the resist-assistan tpatterning (RAP) process. After sustaining the electric field when starting emission current density (Js) is 0.1 ma/cm 2 during 40 hrs, it was observed that the field emission property and uniformity were remarkably improved due to the elimination of oxygen atom and thus the reconstruction of carbon bonding at the tip of CNTs during field emission.. P1-80 Field Emission Characteristics of Dot-patterned Photosensitive CNT Paste J. Kim, H. Lee, J. Jeon, J. C. Goak, and N. Lee (Sejong Univ., Korea) Fabrication of dot-patterned carbon nanotube (CNT) emitters with excellent field emission properties using photo-sensitive CNT paste is described. The photosensitive CNT paste showed good photo- patternability, which led us to easily form 10-µm-diameter dot arrays. We presented a parametric study on formulating the photo- sensitive paste and their resultant field emission characteristics. P1-81 Synthesis of Thin Multiwalled Carbon Nanotubes for Field Emission by Optimizing Gas Compositions in Thermal Chemical Vapor Deposition H. J. Jeon, H. J. Cho, Y. R. Kim, and N. Lee (Sejong Univ., Korea) This study investigated the effect of H2 upon the growth of CNTs by changing the ratios of H2 to Ar during the growth using C2H2. With higher contents of H2 in Ar, CNTs became longer and thinner, resulting in their higher aspect ratios. P1-82 Adaptive Contrast Ratio Enhancement Algorithm for Mobile LCD S.-r. Shin, H.-h. Hwang (Hanyang Univ., Korea), B.-s. Bae (Hoseo Univ., Korea), and S.-h. Kim (LG Innotek Co. Ltd., Korea) 76 IMID 2007 August 27-31,

42 We have developed the adaptive contrast ratio enhancement algorithm for mobile LCD. This algorithm aims at effective contrast ratio enhancement with minimizing degeneration of color and white balance. It also is very simple to fit mobile LCD system. P1-83 Design Considerations on Partition of SOP, CMOS and PCB Technologies for Mobile Display System Implementation S. Y. Lee and J. H. You (Hongik Univ., Korea) For lower power and smaller size with higher image quality, it is desirable to have more units integrated on a display panel. It needs careful design considerations in selecting CMOS, SOP or PCB. An experimental display system is designed and power and delay considering chip area, data rates and bus width are analyzed for all technology combinations to obtain optimum design methodologies. P1-84 Hardware Architecture of a Wavelet based Multiple Line Addressing Driving System for Passive Matrix Displays S. Lam and H. De Smet (Ghent Univ., Belgium) A hardware architecture is presented of a wavelet based multiple line addressing driving scheme for passive matrix displays using the FPGA (Field Programmable Gate Arrays), which will be integrated in the scalable video coding architecture[1]. The incoming compressed video data stream will then directly be transformed to the required column voltages by the hardware architecture without the need of employing the video decompression. P1-85 High Speed Parallel Fault Detection Design for SRAM on Display Panel K. H. Jeong and J. H. You (Hongik Univ., Korea) SRAM cell array and peripheral circuits on display panel are designed using LTPS process. To overcome low yield of SOP, high speed parallel fault detection circuitry for memory cells is designed at local I/O lines with minimal overhead for efficient memory cell redundancy replacement. Normal read/write and parallel test read/write are simulated and verified. P1-86 An Efficient Frame Rate Up-conversion Method with Adaptive Motion Estimation and Compensation for Mobile Projection Displays J. O. Lee, S. K. Jang, Q. S. Chen, and C.-W. Kim (Inha Univ., Korea) In this paper, a frame rate conversion method using motion compensation based on block matching algorithm with adaptive block size is proposed. In order to improve the accuracy of the motion vectors, the motion vector refinement technique is proposed. The proposed technique exhibits better performance with lower hardware complexity. P1-87 A Hybrid Hardware Architecture for LCD Overdrive Frame Buffer Reduction J. Choi, A. Jeong, and J. Baek (Dawin Technology Inc., Korea) We present a hybrid hardware architecture capable of encoding and decoding a full HD resolution video with 60 fps. A number of technical modifications are applied to enhance the quality of synthetic images. Image quality of the proposed algorithm was comparable to that of BTC compression. P1-88 Novel Impulsive Driving Schemes for 120Hz LCD Panels H. Nam, J. Oh, B. H. Shin, K. Y. Oh, B. H. Berkeley, N. D. Kim, and S. S. Kim (Samsung Electronics Co. Ltd., Korea) Two new impulsive driving technologies for use in 120Hz LCD panels are proposed to improve moving picture quality. One technology generates the dark frame using an adder and a shifter simply without using any LUTs. The other is a backlight flashing method designed to avoid ghost images. Measured MPRTs were 10.8ms and 4.4ms. P1-89 Design of Integrated a-si:h Gate Driver Circuit with Low Noise for Mobile TFT-LCD Y.-h. Lee, Y.-j. Park, J.-o. Kwag, H.-g. Kim (Samsung Electronics Co. Ltd., Korea), and J. Yi (Sungkyunkwan Univ., Korea) This paper investigated a gate driver circuit with amorphous silicon for mobile TFT-LCD. We proposed newly designed gate driver circuit with dynamic switching inverter and carry out signal. In result, the noise is reduced and the stability is improved. P1-90 Response Time Compensation of LCD with Integrated Thermal Sensor K.-C. Lee, Y.-J. Park, I.-H. Ahn, K.-U. Choi, and S.-H. Moon (Samsung Electronics Co. Ltd., Korea) This paper presents a thermally adaptive driving (TAD) technology for response time compensation of LCD with integrated sensor. The TAD is comprised of analog sensor signal conditioning and a digital feedback algorithm. Utilizing with a digital feedback system, TAD reduces response time of nearly 50% over the temperature range P1-91 A High-Speed and High-Accurate Common Source Type Analog Buffer Circuit using LTPS TFTs for TFT-LCDs H.-W. Kim, C.-W. Byun, and O.-K. Kwon (Hanyang Univ., Korea) A high-speed and accurate analog buffer is proposed for mobile display using LTPS TFTs. The proposed analog buffer is common source type with sampling and negative feedback mode. The simulation results show that maximum mischarging voltage of the proposed buffer is 8mV and previously reported one is 37mV. P1-92 Low Power and Small Area Source Driver using Low Temperature Poly-Si (LTPS) Thin Film Transistors (TFTs) for Mobile Displays S.-K. Hong, C.-W. Byun, J.-S. Yoon, and O.-K. Kwon (Hanyang Univ., Korea) A low power and small area source driver using LTPS TFTs is proposed for mobile applications. This source driver adopts level shifter with holding latch function and 78 IMID 2007 August 27-31,

43 new R-to-R type digital-to-analog converter (DAC). The power consumption and layout area of the proposed source driver are reduced by 23% and 25% P1-93 A Novel Digital Driving Method for AM-OLED S.-W. Lee, J. W. Choi, J. Jang (Kyung Hee Univ., Korea), and H.-J. Chung (Kumoh Nat l Inst. of Technology, Korea) We propose a novel digital driving method for AM-OLED (Active Matrix- Organic Light Emitting Diode) display. Proposed method modulates VDD so that luminance may be weighted in accordance with the bit significance. We can increase the minimum emission time or slower scan circuits are applicable by using proposed method. P1-94 The Research on Vertical Block Mura in TFT-LCD C. Long, W. Wang, and H. Wu (Beijing BOE Optoelectronics Technology Co. Ltd., China) In this paper, a vertical block mura, which massively occurred in the LCD products, was investigated extensively by various methods, source drain (SD) line shift is found out to be one of the key reasons. This work to some extent, establishes theoretic hypothesis for further research and solutions similar issues. P1-95 Study of Point Defects Caused by a Thin Contamination Layer in a-si TFT-LCD J. Y. Oh, J. K. Lee, M. S. Yang, and I. B. Kang (LG. Philips LCD Co. Ltd., Korea) Analysis of point defects invisible by a microscope has been studied on the a-si thin film transistor panel.the point defects which were named Invisible Point Defect (IPD) is characterized by no particles or distortion of patterns on a pixel structure and randomly distributed on panels. P1-96 High Performance Thin Film Transistor with ZnO Channel Layer Deposited by DC Magnetron Sputtering Y.-K. Moon, D.-Y. Moon, S.-H. Lee, K.-H. Park (Hanyang Univ., Korea), C.-O. Jeong (Samsung Electronics Co. Ltd., Korea), and J.-W. Park (Hanyang Univ., Korea) We studied ZnO thin films deposited with DC magnetron sputtering for channel layer of TFTs. After analyzing of the basic physical and chemical properties of ZnO thin films, we fabricated a TFT-unit test cell. The field effect mobility of 1.8 cm 2 /Vs and threshold voltage of -0.7 V were obtained. P1-97 New Cellulose-Based Photopolymer with High Thermal and UV Stability H.-D. Cho (Hoseo Univ., Korea), S.-K. Park (NDIS Corp., Korea), C.-G. Jhun, S.-B. Kwon (Hoseo Univ., Korea), Y. Kurioz, Y. Reznikov, and I. Gerus (Nat l Academy of Science, Ukraine) We report on the alignment properties of new cellulose based photopolymer. The LC alignment quality and image sticking property of the TN and IPS cells made by using the photopolymer were investigated. Thermal and UV stability of those properties were also investigated. Excellent LC alignment quality and stability were obtained particularly in IPS mode. P1-98 The Durability of LCD Glass Substrate in Dry Etching T. Yanase, S. Miwa, and H. Yamazaki (Nippon Electric Glass Co. Ltd., Japan) Durability of LCD glass, OA-10 and OA-21, to SiCl4 and SF6 gases was investigated. Reaction products are generated on the glass surface. The reaction products are reduced by changing the etching conditions. The durability of OA- 10 and OA-21 to the dry etching gases is comparable. P1-99 Characterization of ZnO for Transparent Thin Film Transistor by Injection Type Delivery System of ALD W.-S. Choi (Hoseo Univ., Korea) ZnO nano film for transparent thin film transistors is prepared by injection type source delivery system of atomic layer deposition. By using this delivery system the source delivery pulse time can dramatically be reduced to 0.005s in ALD system. ZnO nanofilms obtained at 150 are characterized. P1-100 Interaction Between Transparent Dielectric and Bus Electrode for Heating Profile in PDP S. Lee, D. Kim, M. Park, S. Hwang, and H. Kim (Inha Univ., Korea) In PDP, bus electrode should have low resistance for high efficiency. The transparent dielectric affects the shape change of bus electrode during the firing. These are related with the electrical property of the electrode. In this study, the shape of electrode was controlled by firing schedules of the transparent dielectric and the bus electrode. P1-101 Improvement of Photo-Alignment Characteristics for Device Applications Y.-J. Hwang (Hongik Univ., Korea), K.-Y. Choi, M.-H. Yi (KRICT, Korea), S.-H. Hong, and D.-M. Shin (Hongik Univ., Korea) In order to solve image sticking phenomena, the gas-phase and liquid- phase interfacial reactions of photosensitive polyimide can annihilate photo-reactive carbon-carbon double bonds, which remain after photo-alignment process. The annihilation processes dramatically affect residual DC and photochemical reorientation of photo-active functional groups. P1-102 Low-Temperature Processable Polyimide Gate Insulator and Hybridization Approach for High Performance Pentacene Thin Film Transistor T. Ahn, J. W. Kim, and M. H. Yi (KRICT, Korea) We have synthesized novel fully soluble and low-temperature processable polyimide gate insulator (SPI-3) through one-step condensation polymerization. For the preparation of SPI-3, 5- (2,5- dioxytetrahydrofuryl)-3-methly-3-cyclohexene-1,2- dicarboxylic anhydride (DOCDA) and 4,4-diaminodiphenylmethane (MDA) were used as monomers and fully imidized SPI-3 was completely soluble in organic solvents like У-butyrolactone and 2-butoxyethanol, etc. 80 IMID 2007 August 27-31,

44 P1-103 Direct Writing of Semiconducting Oxide Layer using Ink- Jet Printing S. Lee, Y. Jeong, and J. Moon (Yonsei Univ., Korea) Zinc tin oxide (ZTO) sol-gel solution was synthesized for ink-jet printable semiconducting ink. Bottom-contact type TFT was produced by printing the ZTO layer between the source and drain electrodes. The transistor involving the ink-jet printed ZTO had the mobility~0.01cm2/vs. We demonstrated the direct-writing of semiconducting oxide for solution processed TFT fabrication. P1-104 Optical and Dielectric Properties Dependent on Glass Composition for Photolithographic Process of Barrier Ribs in PDP J. Won, J. Kim, S. Hwang, N. Kim, and H. Kim (Inha Univ., Korea) Refractive index of glasses is important to develop a photosensitive paste for barrier ribs in PDP. We investigated the refractive index and dielectric constant of glasses by contents of silica in B2O3- Al2O3-SiO2 glasses. It is confirmed that the refractive index of the glass system is changed by the composition of glasses. P1-105 The Effect of Ink Adhesion on Color Filter Glass Substrates by Different Plasma Treatment K.-S. Chen, S.-H. Hsu (Tatung Univ., Taiwan), Y.-C. Lo, P.-Y. Liu, J.-M. Wang, and H.-A. Li (Chunghwa Picture Tubes, Ltd., Taiwan) This study discussed the effect of ink adhesion on color filter glass after different kinds of plasma treatment. From contact angle analysis, we could get different ink adhesion results after HMDSZ, O2, IPA, and CF4 plasma treatment. Substrates after PFMCH plasma treatment have good surface hydrophobic property, and contact angle raise from <10o to 50o. P1-106 Effect of Liquid Crystal Structures on Polymerizationinduced Phase Separation Behavior by Simultaneous Resistivity and Turbidity Measurement S. Park, S. Lee, and J. W. Hong (Chosun Univ., Korea) Photopolymerization and phase separation behavior during the PDLC formation process were investigated by simultaneous resistivity and turbidity measurement. Using this experimental method, we investigated the effect of liquid crystal structure on photopolymerization and phase separation behavior. P1-107 Synthesis and Characterization of a Novel TTF Derivative L. Wang and M.-H. Lee (Chonbuk Nati l Univ., Korea) We report the syntheses and characterizations of a novel TTF derivative. To extend the mesogenic core, alkoxy naphthalenic group and short alkyl chains were introduced on either side of TTF unit, which results in asymmetric planar structure. TTF molecule is expected to show many interesting properties. P1-108 New Liquid Crystal Photoalignment Materials Based on Photosensitive Polyimides Having Long Alkoxy Cinnamate Chains J. Wu, S. Jeong, S. H. Lee, and M.-H. Lee (Chonbuk Nat l Univ., Korea) A series of new photosensitive polyimides having long alkoxy cinnamate chains were synthesized for liquid crystal (LC) photoalignment material. The polymer after irradiating linearly polarized UV light induced homogeneous and stable LC alignment. The chemical structure of the polymeric material was characterized and their photochemical LC alignment behavior was evaluated. P1-109 Carbon Nanotube Based Transparent Electrodes for Flexible Displays using Liquid Crystal Devices J.-H. Shin, H. C. Lee, J. H. Lee, S. M. Park, P. S. Alegaonkar, and J. B. Yoo (Sungkyunkwan Univ., Korea) Transparent electrodes for a flexible display based on the liquid crystal (LC) were formed by carbon nanotubes (CNTs) on polyethylene terephthalate (PET) substrates. The thin multi wall carbon nanotubes (t-mwnts) networks for electrodes were obtained by filtration- transfer method from well-dispersed CNTs solution. P1-110 Surface Modification of Thin Film using Trimethylchlorosilane Vaporization Treatment B.-K. Choo, K.-H. Kim, N.-Y. Song, J.-S. Choi, K.-C. Park, J. Jang (Kyung Hee Univ., Korea), J.-O. Kim, Y.-H. Nam, G.-S. Chae, and I.-J. Chung (LG.Philips LCD Co. Ltd., Korea) We introduce non-contact surface modification using trimethylchlorosilane (TMCS) for thin film transistor application. The surface is not contacted to the TMCS solution because it is vaporized at room temperature. The hydrophobic surface with contact angle of ~ 70o can be achieved by the transfer of TMCS using a PDMS mold. P1-111 Study of Surface State Density of Hydrogenated Amorphous Silicon Thin-film Transistors by Admittance Spectroscopy M.-T. Hsieh, J.-F. Chen, H.-W. Zan, K.-H. Yen (Chiao Tung Nat l Univ., Taiwan), C.-C. Chang, C.-C. Shih, C.-H. Chen, Y.-S. Lee, and H.-C. Chiu (AU Optronics Corp.,Taiwan) We reported a simplified circuit model to investigate the interface states and the quality of a-si film based on a MIS structure using admittance spectroscopy. The model can be employed easily to monitor the fabrication process of thinfilm transistor and to obtain the important parameters. P1-112 Electrostatic Discharge in TFT Manufacturing Process C. Long, X. Lee, and W. Wang (Beijing BOE Optoelectronic Technology Co. Ltd., China) Thin Film Transistor (TFT) manufacturing process is complicated. Electrostatic discharge (ESD) occurs during every process step, which destroy TFT and is detrimental to the production yield. This paper describes ESD phenomena in 82 IMID 2007 August 27-31,

45 terms of TFT design and processing flow. The abnormal contact between equipment and glass is found out to be the key reason causing ESD. The mechanism of ESD is contemplated based on the experimental analysis. P1-113 High Performance of Crystallization for LPTS TFTs using Solid Green Laser K. Nishida, R. Kawakami, J. Izawa, N. Kawaguchi, F. Matsuzaka, M. Masaki, M. Morita, A. Yoshinouchi, and Y. Kawasaki (IHI Corp., Japan) We developed the laser annealing system using green laser of 261W (5kHz) and 75.5mJ/pulse (2kHz). We confirmed that this system makes it possible to form two kinds (large or uniformed grain) of poly-si by changing its polarized directions. By using -crystal-si as irradiated films, grain size uniformity is better than that using a- Si. P1-114 Gate Dielectric SiO2 Film Deposition on Poly Silicon using UV-excited Ozone Gas without Heating Substrate N. Kameda, T. Nishiguchi, Y. Morikawa, M. Kekura (Meidensha Corp., Japan), H. Nonaka, and S. Ichimura (AIST, Japan) We have grown SiO2 film on a polycrystalline Si layer using excited ozone gas, which is produced by ultra-violet light irradiation to ozone gas, without heating substrate. The obtained SiO2 film shows dielectric properties comparable to the device quality films measured at the MIS capacitor configuration. P1-115 Development of Laser Thermal Printing Device I. Park, J. H. Kwon, and J. Yi (Yeunganam Univ., Korea) A laser thermal printing system was developed to fabricate OLED. A single mode fiber laser beam was diffracted by an acousto-optic modulator. The diffracted beam was sent to a galvanometer to print organic film on ITO glass with resolution of 30µm. P1-116 Analysis and Interpretation of Electric Characteristics of Dry Etching Process for the TFT-LCD Fabrication O.-D. Kwon, H.-B. Kwon, S.-J. Yoo, J.-K. Kim, J.-H. Jeon, K.-W. Lee, H. H. Choe, J.-H. Seo (Korea Aerospace Univ., Korea), D.-J. Seong, J.-H. Kim, and Y.-H. Shin (KRISS, Korea) We have simultaneously measured the electric characteristics and basic plasma parameters of the dry etching chamber during the process, analyzed them to interpret plasma parameters. For the Ar plasma discharge case, we could obtain the density and temperature from the electric characteristics using a simple simple sheath model. P1-117 A Study on Wet Etch Behavior of Zinc Oxide Semiconductor in Acid Solutions B.-H. Seo, S.-H. Lee, J.-H. Jeon, H. H. Choe, K.-W. Lee, Y. U. Lee (Hankuk Aviation Univ., Korea), and J. H. Seo (KETI, Korea) the wet behavior of ZnO thin film in aqueous wet etching solutions conventionally used un TFT industry has not been reported. wet corrosion behavior of RF magnetron sputtered ZnO thin film in various wet solutions such as phosphoric and nitric acid solutions was studied using by electrochemical analysis. P1-118 Doping Control of Belt Source Evaporation Techniques for Large Size AMOLED C. H. Hwang (OLEDON Co. Ltd., Korea) In order to understand the doping control for the belt source evaporation, the Alq3 and NPB were co-deposited on the Ta plate to re- sublimate. The very slow heating (0.1ºC/s) of the Ta plate shows the separated rate signals of Alq3 and NPB sublimated from the Alq3-mixed NPB organic film on Ta plate. The ratio of the vapor rates of Alq3 and NPB was measured as same as that of each sublimation rates. Therefore, the doping control of the belt source evaporation is of the ratio of the vaporization rates of host and dopants. P1-119 Development of Internal Linear Inductively Coupled Plasma Sources for Large Area Flat Penal Display Processing J. H. Lim, J. K. Park, K. N. Kim, and G. Y. Yeom (Sungkyunkwan Univ., Korea) An inductively coupled plasma source with internal-type linear inductive antennas named as multiple U-type antenna was developed for the substrate size of 2,300mm 2,000mm. High density plasmas on the order of cm -3 could be obtained and the RF power of 8kW with good plasma stability. P1-120 CNT Emitter Coated with Titanium Oxide Nanoparticles for FED Application J.-U. Kim, B.-H. Ryu (KRICT, Korea), H. Moon, J. Kim (Samsung SDI Co.Ltd., Korea), H. N. Cho, S. U. Park (IMD Co.Ltd., Korea), Y. Choi (KRICT, Korea) Carbon nanotubes (CNTs) have used as an electron field emitter of the field emission display (FED). To commercialize the FED with CNT emitter, life time and emission efficiency have to be solved. We investigated the TiO2 coated CNT as a field emitter. Field emission performance of CNT coated with TiO2 nanoparticles was evaluated and discussed. P1-121 A New Cost-Effective Optical Plate for High Performance LCD-TVs J. Ha, J. Paek,T. Jang, J. Choi (Samsung Electronic Co. Ltd., Korea), and Y. Jung (Bayer Sheet Korea, Korea) The objective of the research presented in this paper is to design a highly efficient LCD-TV backlight unit (BLU) which minimizes lamp count without light leakage from the BLU. A new optical plate helps to successfully distribute spatial luminance in a 46inch LCD-BLU consisting of only 20 CCFLs. P1-122 Electrooptic Characteristics of Flat Fluorescent Lamps Depending on the Driving Conditions Y.-Y. Kim, J.-Y. Choi, and J.-H. Ko (Hallym Univ., Korea) 84 IMID 2007 August 27-31,

46 The electrooptic characteristics of 32-inch multi-channel-structured, mercury-type flat fluorescent lamps have been investigated in detail. The luminance and the lamp current/voltage have been monitored by changing the driving conditions such as duty ratio, backlight conditions. It was found that the efficiency became the maximum at the duty ratio of 50 % with a nearby metal plate. P1-123 [Late News] The Optimization of Chiral Dopant and Rubbing Direction in Liquid Crystal Display K.-J. Lee, J.-B. Park, J.-M. Park, H.-C. Kim, J.-H. Seo, Y.-J. Kim, and B.-H. Jung (BOE Hydis Technology Co. Ltd., Korea) In order to improve the performance of LCD, chiral dopant is added to liquid crystal mixture. When we decide the rubbing direction, we must consider the rotation direction of liquid crystal molecules by chiral dopant. When the rotation direction of liquid crystal molecules caused by dielectric torque decided by rubbing direction and that decided by chiral dopant are coincided, the performance of LCD would be improved along to our initial cell design intentions. P1-124 [Late News] Monte Carlo Simulation of Interacting Liquid Crystal and Substrate using Rigid Model Molecules Y. Hyodo, T. Koda (Yamagata Univ., Japan), Y. Momoi, W. Y. Kim (LG.Philips LCD Co. Ltd., Japan), A. Nishioka, K. Miyata, and G. Murasawa (Yamagata Univ., Japan) Alignment of liquid crystal molecule on substrate is a key factor for improvement of liquid crystal display. Yet many problems exist for understanding molecular mechanism of liquid crystal alignment. In the present study, we propose MC simulation that takes interface phenomena between liquid crystal and substrate into consideration. We use rigid model molecules of liquid crystal and substrate. Discussion is made on role of excluded volume effect in interfacial phenomena. P1-125 [Late News] Electro-optical Properties of Polymerstabilized Nematic Pi Cells C.-Y. Huang, R.-X. Fung, and Y.-G. Lin (Nat l Changhua Univ. of Education, Taiwan) We analyzed conditions for fabricating zero-bias polymer-stabilized liquid crystal (PSLC) pi cells. A high curing voltage and a very low curing intensity are effective in fabricating the cell with a high bright state, a low dark state and therefore a steep T-V curve. However, the response time of the cell is slow. Finally, a dual- frequency PSLC pi cell with fast response time is developed. P1-126 [Late News] Electrical Characteristics of Bottom-Contact Organic Thin-Film-Transistors Inserting Adhesion Layer Fabricated by Vapor Deposition Polymerization and Ti Adhesion Metal Layer I. H. Park, G. W. Hyung, H. B. Choi, and Y. K. Kim (Hongik Univ., Korea) The electrical characteristics of organic thin-film-transistor (OTFTs) can be improved by inserting adhesion layer on gate dielectrics. Adhesion layer was used as polymeric adhesion layer deposited on inorganic gate insulators such as silicon dioxide (SiO2) and it was formed by vapor deposition polymerization (VDP) instead of spin-coating process. The OTFTs obtained the on/off ratio of ~10 4, threshold voltage of 1.8V, subthreshold slop of 2.9 V/decade and field effect mobility about 0.01 cm 2 /Vs. P1-127 [Late News] Study about High Temperature Operating Test Result for Thin Film-Transistor Electro Phoretic Display on Plastic S. Y. Kim, W. J. Lee (Samsung Electronics Co. Ltd., Korea), and J.-S. Yi (Sungkyunkwan Univ., Korea) A 14.1-inch reflective type Thin Film Transistor-Electric Phoretic Display was developed at the resolution of 1280 x 900 lines on plastic substrate. All of the processes of TFT were carried out below 100ºC on PES plastic films. The process conditions of TFT were optimized for large area TFT-LCD on plastic substrate. P1-128 [Late News] Enhancement of on-axis Luminance of Flat Fluorescent Lamps(FFLs) by using Micro-lens Arrays J.-H. Park, J.-Y. Lee, and J.-H. Ko (Hallym Univ., Korea) The effect of the modification of surfaces of flat fluorescent lamps (FFLs) on the light-output distribution has been investigated by ray tracing methods. Microlenses with different shapes have been formed on the flat upper surface of FFLs in order to collimate the output light emitted from the FFLs. It was found that microlenses have substantial effects on the light-output distribution, which might be used to reduce the number of optical films in the backlight unit for LCD applications. P1-129 [Late News] Electronic Ink using the Electrophoretic High Mobility Particles C. A. Kim, S.-Y. Kang, G. H. Kim, S. D. Ahn, J. Oh, and K. S. Suh (ETRI, Korea) The black/white electronic ink containing high mobility white nano particles and the organic black pigment particles dispersed in dielectric fluid were prepared. A charge control agent affects the electrophoretic zeta potentials of white particle, which show the maximum value in zeta potential. The electronic ink panel fabricated with the charged white particles and the black particles exhibits more than 15:1 contrast ratio at 10V. P1-130 [Late News] Pentacene Thin-Film Transistors with Polyimide/SiO2 Dual Gate Dielectric H. Imahara (Tokyo Inst. of Technology, Japan), W. Y. Kim, Y. Oana (LG.Philips LCD Co. Ltd., Japan), Y. Majima (Tokyo Inst. of Technology, Japan) Relationships between field effect mobility and grain size on pentacene thin-film transistors with polyimide/sio2 gate dielectrics have been studied. 6 kinds of polyimide were used as surface treatment gate dielectric layer. Grain size of the pentacene thin film were between 5 and 30µm and depended on the polyimide. The field effect mobility were also depended on the polyimide and the those values were from to 0.69cm 2 / (Vs). The field effect mobility tends to increase with increasing the grain size. 86 IMID 2007 August 27-31,

47 August 29 (Wednesday) Room New LCD modes August 29 (Wednesday) Room Display Electronics II Chair W. Lee (Chung Yuan Christian Univ., Taiwan) Co-Chair E. -J. Choi (Kumoh Nat l Inst. of Technology, Korea) Chair S.-W. Lee (Kyung Hee Univ., Korea) Co-Chair B.-D Choi (Hanyang Univ., Korea) :20-16:45 [Invited] Tandem Reflective LCD and OLED J.-H. Lee (Nat l Taiwan Univ., Taiwan), H. Xianyu, Z. Ge, K.-C. Liu (Univ. of Central Florida, USA), and S.-T. Wu (Univ. of Chang Gung, Taiwan) We demonstrate a hybrid device with high ambient-contrast-ratio (>133.8:1) under any ambient conditions by vertically integrating a reflective LCD and a transparent OLED. The twisted nematic LC cell is placed beneath the OLED to improve device transmittance by 53.8% due to the asymmetric emission from both-sides of the transparent OLED :45-17:10 [Invited] Polarizer-free Liquid Crystal Devices Y.-H. Lin (Nat l Chiao Tung Univ., Taiwan), H. Ren, Y.-H. Wu, and S.-T. Wu (Univ. of Central Florida, USA) Liquid crystal (LC) devices can be operated as amplitude modulators and phase modulators. They usually require two polarizers; therefore the optical efficiency is limited. We introduce two general principles of polarization-free liquid crystal devices and also show several LC devices by applying the principles :10-17:35 [Invited] Single-Layer Color Cholesteric Liquid Crystal Displays S.-Y. Lu, Y.-h. Lin, and L.-C. Chien (Kent State Univ., USA) A single-layer CLCD has been prepared from a polymer-stabilized cholesteric liquid crystal. The unique feature of the polymer stabilization is in that the electrically switched colors preserve high reflectivity. A bistable single-layer CLCD has been prepared by the formation of polymer barrier walls and lighttuned cholesteric pitches to reflect blue, green and red color sub-pixels :35-18:00 [Invited] Materials Aspects for Fast Switchable NLC/FLC Devices W. Haase, V. Bezborodov, V. Lapanik, and F. Podgornov (Darmstadt Univ. of Technology, Germany) In this review, several aspects for improving the quality of materials parameters of Nematic Liquid Crystals (NLCs) and Ferroelectric Liquid Crystals (FLCs) will be discussed. 88 IMID :20-16:45 [Invited] Design Issues of Digital Display Interface D.-K. Jeong and D.-H. Oh (Seoul Nat l Univ., Korea) As the new generations of display devices are developed, different requirements are emerging on the digital display interfaces. In this presentation, existing digital video interfaces are presented and their performance and circuit design issues are compared. The requirements and design challenges of the next generation digital display interfaces are presented :45-17:05 Novel Method of Color Correction LUT Generation for LCDs J. W. Jeong, H. S. Moon, B. H. Berkeley, and S. S. Kim (Samsung Electronics Co. Ltd., Korea) A well-known color correction algorithm is Accurate Color Capture (ACC). However, determination of ACC values has been time consuming as past methods have required trial-and-error analysis of differences between predicted and measured values. We propose a new ACC value determination method that uses spatially emulated patterns and measured values on patterns :05-17:25 New X-Y Channel Driving Method for LED Backlight System in LCD TVs D. Cho, W. S. Oh, K. M. Cho, G. W. Moon (KAIST, Korea), B. Yang, and T. Jang (Samsung Electronics Co.Ltd., Korea) This paper proposes a novel RGB-LED backlight system, for 32 LCD TVs,accompanied by a new X-Y Channel driving method. This proposed driving method is able to produce image improvement and reduced power consumption. The number of drivers required for implementation is also much reduced than that of the conventional cluster driving method :25-17:45 A Low Power Source Driver of Small Chip Area for QVGA TFT-LCD Applications N.-X. Hung (Feng Chia Univ., Taiwan), W.-S. Jiang (Nat l Chung Hsin Univ., Taiwan), B.-C. Wu, M.-Y. Tsao (Feng Chia Univ., Taiwan), H.-W. Liu, C.-H. Chang (Nat l Chung Hsin Univ., Taiwan), M.-S. Shiau (Graduate Inst. of Electrical and Communication Engineering,Taiwan), H.-C. Wu, C.- H. Cheng, and D.-G. Liu (Feng Chia Univ., Taiwan) In this study, an architecture for 262K-color TFT-LCD source driver. In this paper proposed the chip consumes smaller area and static current which is suitable for QVGA resolutions. In the conventional structures, all of them need large number of OPAMP buffers to drive the pixels, Therefore, highly resistive R-DACs are needed to generate gamma voltages to reduce the static current. August 27-31,

48 August 29 (Wednesday) Room OLED Device Structure August 29 (Wednesday) Room Human Factor I Chair Y. S. Park (Kyung Hee Univ., Korea) Chair T. Kawai (Waseda Univ., Japan) Co-Chair H. -C. Li (Kwangwoon Univ., Korea) :20-16:45 [Invited] High Performance OLEDs with a New Device Structure J. K. Noh, M. S. Kang, J. S. Kim, J. H. Lee, Y. H. Ham, J. B. Kim, and S. Son (LG Chem., Korea) We report the fabrication of a new inverted OLED devices having potential to be used for both AM-OLED and lighting applications :45-17:05 Novel OLED Structure Allowing for the In-situ Ohmic Contact and Reduction of Charge Accumulation in the Device W. J. Song, B. Kristal, C. H. Lee, Y. J. Sung, S. S. Koh, M. H. Kim, S. T. Lee, H. K. Chung, H. D. Kim (Samsung SDI Co. Ltd., Korea), C. H. Lee (Seoul Nat l Univ., Korea) and H. K. Chung (Samsung SDI Co. Ltd., Korea) In this paper we have demonstrated the enhancement of the power efficiency and device lifetime of organic light-emitting diodes (OLEDs) by introducing the ETL 1 / ETL2 (composite ETL) structure between EML and cathode and the HIL1 (composite HIL) / HIL2 between anode and HTL. Compared to reference devices retaining conventional architecture, novel OLED structure shows an outstanding EL efficiency that is 1.6 times higher (~4.5 lm/w versus ~ 2.71 lm/w for the reference device) and lower driving voltage ( V>1V), but also a longer lifetime and smaller operating voltage drift over time :05-17:25 High Efficiency in Phosphorescet Organic Light-Emitting Doides using Carbazole Type Exciton Blocking Layer S. H. Kim, J. Jang (Seoul Nat l Univ., Korea), and J. Y. Lee (Dankook Univ., Korea) High efficiency in Phosphorescent Organic light-emitting diodes using carbazole type exciton blocking layer were investigated and detailed mechanism for light emission process was studied. Efficiency of green PHOLEDs was enhanced by a factor :25-17:45 An Inverted Bottom Emission Organic Light Emitting Device with a New Electron Injection Layer Y. J. Lee, J. H. Kim, S. N. Kwon, and M. P. Hong (Korea Univ., Korea) Highly efficient inverted bottom emission organic light emitting device (IBOLED) with a structure of ITO/EIL/Alq3/NPB/WO3/Al was investigated. we introduced ultra thin Al layer and Liq layer between ITO and Alq3. The device characteristics showed tune on voltage of 4.5V, the maximum luminance of Cd/m2 and current efficiencies of 3.56 Cd/A :20-16:45 [Invited] Temporal Factors of Human Depth Perception S. Shioiri (Tohoku Univ., Japan) Although we know that depth perception is influenced strongly by temporal factors, our knowledge of the temporal characteristics of the process of the stereopsis is limited. Here, I introduce two experiments that investigate temporal factors of stereopsis: one is for depth perception and the other is for perception of motion in depth. Both studies show that there are multiple mechanisms to process depth information with different temporal characteristics. The knowledge of the temporal factors of stereopsis should be useful to design and evaluate 3D displays and the 3D contents :45-17:10 [Invited] The Effects of Three Dimensional Stimulus Configuration on Self-Motion Perception Induced by Large Visual Display S. Nakamura (Nihon Fukushi Univ., Japan) The interactions between two-dimensional and three-dimensional stimulus configurations on visually induced self-motion perception (vection) were examined. The experiment revealed that there is no 2D-3D interaction, and vection strength is determined solely by the size of the moving background stimulus, which should be a primary factor in inducing vection :10-17:30 An Improvement Method of Color Image using Saturation Extension K.-O. Yang, J.-H. Yun, H.-H. Cho, and M.-R. Choi (Hanyang Univ., Korea) The proposed method are classified with the adaptive contrast stretching method for contrast enhancement and the adaptive saturation enhancement method for saturation enhancement. The proposed algorithms are focused on a preference color processing in order to generate better image quality than the algorithms focused on a uniform color processing for human vision :30-17:50 Motion Blur Analysis by Gabor Patch K. Oka and D. Oka (Nanosoftware Ltd., Japan) Motion blur of LCD displays has been measured by using Gabor patch radiuses, which eyes observe. Gabor radiuses at a normalized scroll speed, Scroll speed times Fc, to be unity, indicate motion blur strengths, which are named a perceived motion blur strength measured by a Gabor patch. The results are compared with PBET and EBET. 90 IMID 2007 August 27-31,

49 August 29 (Wednesday) Room Emission Material & Applications August 30 (Thursday) Room Poly-Si TFTs Chair E. Howard (Motorola, USA) Chair U. J. Chung (Columbia Univ., USA) Co-Chair M. -K. Kang (Samsung Electronics Co., Ltd., Korea) :20-16:45 [Invited] Field Emission Display and Backlight for LCD using Printed Carbon Nanotubes Y. C. Kim, D. S. Jung, B. K. Song, M. J. Bae, H. S. Kang, I. T. Han, J. M. Kim (SAIT, Korea), Y. C. Choi, M. I. Hwang, I. H. Kim, and J. H. Park (Samsung SDI Co. Ltd., Korea) We mainly report recent progress in backlight unit (BLU) for liquid crystal display (LCD) using printed carbon nanotubes (CNTs) including top-gate and lateral gate structures. Lighting performances of CNT- BLU and longevity of printed CNT emitters are intensively discussed. Selected issues related with field emission display (FED) using the same emitters also are presented :45-17:10 [Invited] Low Work Function and Sharp Field Emitter Arrays by Transfer Mold Fabrication Method M. Nakamoto, G. Sato, and K. Shiratori (Shizuoka Univ., Japan) Extremely sharp and uniform Transfer Mold FEAs with thin film low work function TiN emitter material have been fabricated by controlling the thickness of the coated emitter materials to realize high efficient, high reliable and lowcost vacuum nanoelectronic devices :10-17:35 [Invited] Recycle of CRT Glass Cullet S. H. Chang (Kumoh Nat l Inst. of Technology, Korea) CRT was developed almost 30years ago. Digital TV broadcasting will be common around in At that time present analog CRT cannot receive digital TV signal without certain device. Then analog CRT will be treated as industrial waste. In Japan CRT manufacturers estimate that 35 million analog CRTs will be industrial waste in According to the ratio of population, at least 17 million analog CRTs will be industrial waste in Korea at the same time. Then glass industries in Japan worry how to recycle the CRT glass because the CRT glass is not simple industrial waste :35-17:55 The Stress Positioning Control Method for Slim CRTs Glass Design using FEM Y.-i. Hwang and T.-h. Lee (LG.Philips-Displays Co. PCT, Korea) One of the important role of glass is safety guarantee in CRTs. It is working under high vacuum and has to be maintained continuously for the atmosphere pressure, humidity, and excitation etc, :00-09:25 [Invited] Thin-Beam Excimer Laser Annealing W. B. Ang (TCZ Pte. Ltd., Singapore), D. Rothweiler, and D. S. Knowles (TCZ LLC, USA) Thin Beam Excimer Laser Annealing is investigated as one possible process enabled by the variable concept of Thin Beam LTPS processing. The structure of the resulting p-si material is analyzed in terms of grain size distribution, scaling with energy density and overlap, as well as average surface roughness :25-09:50 [Invited] Electrical Instabilities in P-channel Polysilicon TFTs: Role of Hot Carrier and Self-heating Effects G. Fortunato, P. Gaucci, L. Mariucci, A. Pecora, and A. Valletta (IFN- CNR, Italy) The effects of hot carriers and self-heating on the electrical stability of p-channel TFTs have been analysed combining experimental data and numerical simulations. While hot carrier effects were shown not to induce appreciable degradation, self-heating related instability was found to more seriously affect the device characteristics :50-10:10 6 Mask LTPS CMOS Technology for AMLCD Application S.-J. Park, S.-W. Lee, M. K. Baek, Y. S. Yoo, C. Y. Kim, C.-D. Kim, and I. B. Kang (LG.Philips LCD Co. Ltd., Korea) 6Mask CMOS process in low temperature polycrystalline silicon thin film transistors (poly-si TFTs) has been developed and verified by manufacturing a 6Mask CMOS AMLCD panel. The novel 6Mask CMOS process is realized by eliminating the storage mask, gate mask and via open mask of conventional structure :10-10:30 A Study on Negative Bias Temperature Instability in ELA Based Low-Temperature Polycrystalline Silicon Thin-Film Transistors K. Im, B.-D. Choi, H. H. Park, Y. G. Lee, H. W. Yang, and H. D. Kim (Samsung SDI Co. Ltd., Korea) Negative Bias Temperature Instability (NBTI) in Eximer Laser Annealing (ELA) based Low Temperature polysilicon (LTPS) Thin-Film Transistors (TFT) was investigated. Even though NBTI is generally appeared in devices with thin gate oxide, the TFT with gate oxide thickness of 120 nm, relatively thick, also showed NBTI effect and dynamic NBTI effect is dependent on operational frequency. 92 IMID 2007 August 27-31,

50 August 30 (Thursday) Room Display Electronics III August 30 (Thursday) Room OLED Device Chair J. Y. Jeong (Suwon Univ., Korea) Co-Chair B. -D. Choi (Hanyang Univ., Korea) Chair Y. Qiu (Tsinghua Univ., China) Co-Chair J. H. Kwon (Kyung Hee Univ., Korea) :00-09:25 [Invited] Circuit Design Technologies for System on Panel Y. S. Park, D. Y. Kim, K. N. Kim, Y. Matsueda, and H. D. Kim (Samsung SDI Co. Ltd., Korea) SOP can integrate many functions without using an external driver LSIs. However, to make practical SOP has become more and more difficult because of cost reduction of the driver LSIs. This paper will review the SOP technology trend and introduce a practical SOP, 2.0 QVGA AMOLED with 8bit source driver :25-09:45 High Efficiency and Small Area DC-DC Converter for Gate Driver using LTPS TFTs K.-R. Kim, H.-W. Kim, and O.-K. Kwon (Hanyang Univ., Korea) To achieve high efficiency and small area, we proposed a cross- coupled type DC-DC converter which converts 5V of input voltage to 9V of output voltage and supplies 120μA of current to load. Its efficiency is 92.9% and the area is reduced as much as 19% compared to the previous one :45-10:05 Frame Rate Conversion Ic for Full HD 120 HZ LCD Flat Panel Displays M. Schu, M. Hahn, and P. Rieder (Micronas GmbH, Germany) Latest LCD display technologies systems all offer large screens and impressive picture quality. This paper explains why motion compensating techniques combined with frame rate conversion and quasi-impulse driving reduces motion blur and film judder for flat panel displays and presents the IC and its system application using this technique :05-10:30 [Invited] Novel LCD Structures with OLED Backlight Integration for Mobile Display Applications M. Anandan (Organic Lighting Technologies LLC, USA) This paper reviews the state of the art of critical processes and proposes novel structures of an integrated device comprising LCD and OLED backlight that increases the compactness and decreases the assembly time of hand-held mobile display units like the hand-sets of mobile phones :00-09:25 [Invited] Optoelectronic OLED Modeling for Device Optimization and Analysis B. Ruhstaller, T. Flatz, M. Moos (Zurich Univ. of Applied Sciences, Switzerland), M. Kiy, T. Beierlein, R. Kern, C. Winnewisser (CSEM SA, Switzerland), R. Pretot, N. Chebotareva, and P. van der Schaaf (Ciba Specialty Chemicals Inc.,Switzerland) A comprehensive simulation tool that allows a better understanding and efficient optimization of organic optoelectronics devices and materials is presented and applied to a variety of OLED device structures. An advanced analysis method for extracting the emission zone by means of a fit method is also discussed :25-09:45 Highly Efficient Organic Electroluminescent Diodes Realized by Efficient Charge Balance with Optimized Electron and Hole Transport Layers M. A. Khan, W. Xu, F. Wei, Y. Bai, X. Y. Jiang, Z. L. Zhang, and W. Q. Zhu (Shanghai Univ., China) Highly efficient organic electroluminescent devices (OLEDs) based on 4,7- diphenyl-1, 10-phenanthroline (BPhen) as the electron transport layer (ETL), tris (8-hydroxyquinoline) aluminum (Alq3) as the emission layer (EML) and ' ' N,N-bis-[1-naphthy(-N,Ndiphenyl-1,1'-biphenyl-4,4'-diamine)] (NPB) as the hole transport layer (HTL) were developed. The typical device structure was glass substrate/ ITO/ NPB/ Alq3/ BPhen/ LiF/ Al. Since BPhen possesses a considerable high electron mobility of 5x10-4 cm2 V -1 s -1, devices with BPhen as ETL can realize an extremely high luminous efficiency :45-10:05 Frequency Dependence of OLED Voltage Shift Degradation H. Kim, S. Kim (Seoul Nat l Univ., Korea), S. W. Chang, D. Lee, D. S. Jeong, H. K. Chung (Samsung SDI Co. Ltd., Korea), and Y. Hong (Seoul Nat l Univ., Korea) OLED driving voltage shift can reduce the OLED display lifetime, especially for digitally driven AMOLED. By operating OLED at high frequency, we were able to suppress OLED voltage shift degradation, expecting improved AMOLED lifetime. We describe frequency dependence of voltage shift obtained from bias stress test of OLED. 94 IMID 2007 August 27-31,

51 August 30 (Thursday) Room Fabrication Process for Flexible Display I Chair T. Kamata (ASIT, Japan) :05-10:25 In-situ Optical Thickness & Easy Packing Density Measurements as Novel Approach to Development of OLED M.-G. Kim, S.-Y. Kim, S.-H. Lee, J.-B. Song, S.-H. Park, J.-M. Son, S.- K. Kang, and S. Tamura (SAIT, Korea) Optical thickness method using double interferometer showed dynamic variations of both mechanical and optical thicknesses. Packing density measured a thickness ratio of before and after pressed single film. Lower swelled thickness of emitting layer in a device and densely packed film had shown better lifetime :00-09:25 [Invited] Fabrication of 70nm-Sized Metal Patterns on Flexible PET Film using Nanoimprint Lithography H. Lee and J.-H. Lee (Korea Univ., Korea) Nano-sized metal patterns were successfully fabricated on flexible PET substrate using nanoimprint lithography. 70nm line and space PMMA resist pattern was formed on PET substrate without residual layer by partial filling effect and 20nm thin Cr metal layer was deposited by e-beam evaporation. Then, PMMA resist was selectively removed by acetone and 70nm narrow Cr pattern was formed :25-09:50 [Invited] Ink Jet Printing of Functional Materials J. Canisius, P. Brookes, M. Heckmeier, M. James, D. Mueller and K. Patterson (Merck Chemicals Ltd, UK) Ink jet printing has been targeted as a key technology for OLED, TFT backplane and other organic semiconductor device fabrication. This presentation will concentrate on aspects of the IJ process, formulation design, jetting performance, interaction with the substrate and resultant printed device performance :50-10:10 The Laminating Process for Single Substrate Flexible LCD K.-S. Bae, Y.-S. Choi (Hanyang Univ., Korea), H.-R. Kim (Kyungpook Nat l Univ., Korea), and J.-H. Kim (Hangyang Univ., Korea) The laminating technique for developing flexible liquid crystal display was demonstrated by using a thin UV curable polymer film and a plastic substrate with patterned polymer wall structure. We adopted the rigid wall structure to provide a solid mechanical support for the stable molecular alignment of liquid crystals (LCs) in the device. The cover film was prepared to have an ability of aligning LC molecules by patterning a micro-groove structure using the softlithographic process. 96 IMID 2007 August 27-31,

52 August 30 (Thursday) Room Human Factor II August 30 (Thursday) Room Projection Displays Chair S. Nakamura (Nihon Fukushi Univ., Japan) Co-Chair J. W. Seo (Hongik Univ., Korea) Chair J. H. Lee (Kongju Nat l Univ.,, Korea) :00-09:25 [Invited] Development of Technology to Prevent Influence of Images upon Viewers T. Morita (Japan Broadcasting Corp., Japan) To prevent biological influence of images upon viewers, we investigated the characteristics features of images and of viewing environments which can cause photosensitivity seizures and visually- induced motion sickness, and developed some methods of detection and conversion of images that can cause such influence :25-09:45 Motion Blur Measurement with a High-Speed Camera J. Laur (Autronic-Melchers GmbH, Germany) and Dr. M. E. Becker (Display-Metrology & Systems, Germany) This paper presents motion picture artifacts measured with a high-speed camera. Measurement results of the high-speed camera on moving targets will be evaluated and compared with motion blur data derived from step responses measured on stationary test patterns with a spot-photodetector :45-10:05 Image Enhancement Method by Saturation and Contrast Improvement G.-H. Park, H.-H. Cho, J.-H. Yun, and M.-R. Choi (Hanyang Univ., Korea) An image enhancement method by saturation and contrast improvement is proposed. Histogram equalization with color difference makes higher contrast. By generating saturation amplification ratio with color difference, the saturation improves effectively. The experimental results show that the proposed algorithm has higher contrast and more natural?look than the conventional methods :05-10:25 A Study on the Quantitative Human Visual Preference with PDP and LCD H. Lee and K.-W. Whang (Seoul Nat l Univ., Korea) We carried out the human visual evaluation on PDPs and LCDs to clarify the viewer preference and the related physical and physiological factors. Our study showed that considering the real usage, the optimum display for viewers was that which showed more soft and smooth image without blurring :00-09:25 [Invited] A Light Pipe Based Recycling Scheme for LED Brightness Enhancement G. Ouyang and K. Li (Wavien Inc., USA) As a follow-up to our previous work we present in this paper some experimental results on LED light recycling. Specifically we demonstrate for the first time that screen brightness can be increased using our light pipe based light recycling scheme for real- life projection display applications :25-09:45 Investigation of Turn-off Condition for Reliable Operation of Mercury Vapor Lamp J.-S. Park, S.-S. Jeong and S.-G. Lee (LG Electronics Inc., Korea) The distributions of mercury in the bulb of a mercury vapor lamp are significantly affected by its turn-off conditions. Most of mercury should be attached to the electrodes before ignition by a proper turn- off condition. The effect of transient profiles of lamp cooling after turn-off on the distribution of Hg was investigated :45-10:05 Study on Noise Reduction of AV Projector S. Kim, K.-S. Bok, and S. G. Lee (LG Electronics Inc., Korea) To reduce acoustic noise level of an AV projector, primary noise sources of AV projector were analyzed. Based on the analyzed result, methods to control each source are presented and tried. Structure- borne noise can be controlled by anti vibration design of mounting system, and air-borne noise by reducing flow resisitvity :05-10:25 Development of 16µm 16µm Digital Micromirror Array Suitable for Seamless-picture Projection Display System D.-H. Kim, J.-W. Jeon, K. S. Lim and J.-B. Yoon (KAIST, Korea) We have developed 16µmx16µm digital micromirror array suitable for seamlesspicture projection display system. This structure can improve the picture quality by making seamless-picture image when combined with high-fill-factor microlens array to focus lights onto the mirror center. The fabricated micromirror shows excellent dynamic performances including the resonant frequency of 400 khz. 98 IMID 2007 August 27-31,

53 August 30 (Thursday) Room a-si TFT Technologies August 30 (Thursday) Room PDP Driving Chair H. -S. Soh (Hoseo Univ., Korea) Co-Chair W. -S. Hong (Univ. of Seoul, Korea) Chair W. J. Yi (Samsung SDI Co. Ltd., Korea) Co-Chair J. H. Seo (Incheon Univ., Korea) :50-11:15 [Invited] Threshold Voltage Control of a-si TFT by Delta Doping of Phosphorous H.-S. Soh (Hoseo Univ., Korea), C. S. Kim, and E. D. Kim (LG. Philips LCD Co., Ltd, Korea) Delta doping method can separate the threshold voltage control region from the charge transport region in a-si TFT, whereby the threshold voltage of a TFT could be modified. Threshold voltage could be changed by delta doping, while field effect mobility was estimated to be 80% of that of standard TFT :15-11:40 [Invited] A-Si TFT based Systems on TFT-LCD Panels W.-C. Wang, C.-T. Chan, and H.-R. Han (Wintek Corp., Korea) Integrating systems on TFT-LCD is more and more popular for the mobile display application. However, it may not be necessary to use LTPS TFT. A-Si TFTs are used to integrate systems on TFT-LCD, especially scan drivers. To further reduce the chip size of driver, the triple-gate pixel structure is developed :40-12:00 Stress Estimation of a Drain Current in Sub-threshold Regime of Amorphous Si:H D.-Y. Lee and K.-H. Lee (LG. Philips LCD Co., Ltd., Korea) We have investigated the Vth shifts and Ids level shift in sub- threshold region induced by Vgs and Vds - Temperature stress (BTS) condition. By drawing out the time-dependent transfer curve (Ids-Vgs) in the region of 10-8~10-13 (A) current level, we can estimate the failure time of TFTs in any operating condition :00-12:20 A Novel Integrated a-si:h Gate Driver J.-W. Lee, H.-S. Hong, E.-S. Lee, J.-Y. Lee, J.-S. Yi (Sungkyunkwan Univ., Korea), and B.-S. Bae (Hoseo Univ., Korea) A novel integrated a-si:h gate driver with high reliability has been designed and simulated. Since the a-si:h TFT is easily degraded by gate bias stress, we should optimize the circuit considering the threshold voltage shift.the proposed circuit dose not shows voltage drop and keeps constant regardless of threshold voltage shift of the TFT :50-11:15 [Invited] High Speed Driving Technique in AC PDPs B.-J. Shin (Sejong Univ., Korea) The new self-priming addressing driving scheme was proposed to improve an address discharge time lag. It utilizes the priming effect maintaining the priming ramp discharge during an address period and the address discharge time lag is significantly improved. In this study, the basic characteristics of the priming ramp discharge are presented :15-11:35 Study on Discharge Characteristics using Vt Close-Curve Analysis in ac PDPs B.-G. Cho and H.-S. Tae (Kyungpook Nat l Univ., Korea) The address discharge characteristics by the various scan-low and common-bias voltages are investigated based on measured address discharge time lags and Vt close-curve analysis. The improved address discharge characteristics is caused by higher external applied voltage than the accumulated wall charges and the high background luminance can be prevented by address-bias voltage and low reset voltage :35-11:55 A Study of the Discharge Characteristics of PDP Having Auxiliary Electrodes with High Xe% Working Gas J.-H. Jang, D.-K. Lee, J.-W. Ok, D.-W. Kim, D.-H. Kim, H.-J. Lee, H.-J. Lee, and C.-H. Park (Pusan Nat l Univ., Korea) We propose new driving schemes, asymmetry and long gap mode, of PDP having auxiliary electrode between scan and common electrode. The proposed structure and driving method can provide higher luminous efficacy by minimizing consumption energy. The effectiveness of the new driving schemes has been investigated for various Xe partial pressure condition :55-12:15 Low Cost Energy Recovery Circuit for PDP using Planar Transformer Networks W. S. Kim, S. Y. Chae, B. C. Hyun, and B. H. Cho (Seoul Nat l Univ., Korea) A new planar transformer type energy recovery circuit for PDP is proposed in this paper. The same current is transferred through both the primary and secondary sides during the energy recovery period. The conduction loss is reduced. Fabrication through simple manufacturing processes is possible using the PCB winding. 100 IMID 2007 August 27-31,

54 August 30 (Thursday) Room OLED Interface & Lifetime August 30 (Thursday) Room OTFT II Chair B. Ruhstaller (Zurich Univ., Switzerland) Co-Chair J. Y. Lee (Dankook Univ., Korea) Chair C. -C. Lee (ITRI, Taiwan) Co-Chair Y. W. Choi (LG Electronics Inc., Korea) :50-11:15 [Invited] Cathode Interface Engineering for Stable and Efficient Organic Light-emitting Diodes Y. Qiu, L. Duan and Y. Li (Tsinghua Univ., China) The improvement of the electron injection is of critical importance for obtaining efficient and stable organic light-emitting diodes (OLEDs). Here, we report some of our recent results on the development of new cathode interlayer materials for OLEDs. Some of our new materials show performance superior to that of LiF :15-11:40 [Invited] Charge Confinement and Interfacial Engineering of Electrophosphorescent OLED B.-D. Chin (KIST. Korea) and C. Lee (Seoul Nat l Univ., Korea) Confinement of charge carrier and exciton is the essential factor for enhancing the efficiency and stability of the electrophosphorescent devices. The interplay between the properties of emitters and other adjacent layers are studied based on the physical interpretation with difference of energy level, charge carrier mobility, and corresponding charge-trapping behavior :40-12:00 Novel Organic Electron Injectors for the Enhancement of Lifetime, Efficiency and Reduction in Operating Voltage in OLEDs P. Kathirgamanathan, V. Arkley, S. Surendrakumar, G. Paramaswara, S. Ganeshamurugan, J. Antipan-Lara, S. Ravichandran, M. Kumaraverl, and Y. F. Chan (OLED-T Ltd., UK) OLED-T has developed a novel organic electron injector, EI-101, which evaporates at much lower temperature than LiF. EI-101 increases the lifetime by up to 12%, reduces the voltage drift by up to 61% and increases the efficiency by up to 15% :50-11:15 [Invited] OTFT Technologies for Flexible Displays C.-K. Song, G.-S. Ryu, M.-W. Lee, and Y.-X. Xu (Dong-A Univ., Korea) The OTFT technologies have been mature almost up to the level of commercialization. In this paper we report the OTFT s applications to the backplane for active matrix electrophoretic, active matrix OLED and to integrated circuits. In addition we also introduce the recently developed technologies for reduction of OTFT s operating voltage :15-11:40 [Invited] Study on Operation Stability of Printed Organic TFTs T. Kamata, K. Suemori, M. Yoshida, S. Uemura, S. Hoshino, T. Kozasa, and N. Takada (AIST, Japan) We have been developing printed organic TFTs for flexible displays. In this study, we have pay attention to the operation stability improvement of organic TFTs, and studied several factors depending on the dielectric layers. From the detailed analysis, we have proposed a new printed dielectric layer :40-12:00 Effects of Process Induced Damages on Organic Gate Dielectrics of Organic Thin-Film Transistors D.-H. Kim, D. W. Kim, K. S. Kim, J. S. Moon, H. J. Kim, D. C. Kim (Korea Univ., Korea), K. S. Oh, B. J. Lee, S. J. You, S. W. Choi (Nat l Fusion Research Center, Korea), Y. C. Park, B. S. Kim (Handong Global Univ., Korea), J. H. Shin, Y. M. Kim, and S. S. Shin (Samsung SDI Co. Ltd., Korea), M. P. Hong (Korea Univ., Korea) The effects of plasma damages to the organic thin film transistor during the fabrication process are investigated. For this study, various deposition methods (thermal evaporation, plasma sputtering, and neutral beam based sputtering) and metals (Au and ITO) have been tested for their damage effects onto the Poly 4-vinylphenol layer surface as an organic gate insulator. 102 IMID 2007 August 27-31,

55 August 30 (Thursday) Room D Display & System I August 30 (Thursday) Room Novel Displays I Chair K. Hopf (Fraunhofer HHI, Germany) Co-Chair J. -Y. Son (Daegu Univ., Korea) Chair K. C. Park (Kyung Hee Univ., Korea) :50-11:15 [Invited] Novel User Interaction Technologies in 3D Display Systems K. Hopf, P. Chojecki, and F. Neumann (HHI, Germany) This paper describes recent advances in the R&D work achieved at Fraunhofer HHI (Germany) that are believed to provide key technologies for the development of future human- machine interfaces. The paper focus on the area of vision based interaction technologies that will be one essential component in future three-dimensional display systems :15-11:40 [Invited] 3D Video Processing for 3DTV K. H. Sohn (Yonsei Univ., Korea) This paper presents the overview of 3D video processing technologies for 3DTV such as 3D content generation, 3D video codec and video processing techniques for 3D displays. Some experimental results for 3D contents generation are shown in 3D mixed reality and 2D/3D conversion :40-12:05 [Invited] 3D Interaction Technique on Stereo Display System Y.-M. Kwon, J.-S. Ki, K.-W. Jeon, and S.-K. Kim (KIST, Korea) There are several researches on 2D gaze tracking techniques to the 2D screen for the Human-Computer Interaction. However, the researches for the gaze-based interaction to the stereo images or 3D contents are not reported. This paper presents a gaze-based 3D interaction technique on autostereoscopic display system :05-12:25 Efficient Tiled Stereo Display System for Tangible Meeting I.-J. Kim, S.-C. Ahn, and H.-G. Kim (KIST, Korea) In this paper, we present a tiled display system for telemeeting. We built our system as a distributed system and use GPU based warping technique for realtime processing. For efficiency, we update specific area only, where remote users exist, in real-time and blended it with static panoramic image of remote site :50-11:15 [Invited] Nanotechnologies in Displays : TFTs with Carbon Nanotubes and Semiconductor Nanowires D. Pribat, C. Cojocaru, M. Gowtham, L. Eude, A. Balan (Ecole Polytechnique, France), P. Bondavalli, and P. Legagneux (Thales Research & Technology, France) We propose new approaches to thin film transistor fabrication that use carbon nanotubes and semiconductor nanowires as active elements. These nanomaterials which are essentially studied in the context of the post CMOS era will certainly impact the active matrix display industry in the near future :15-11:40 [Invited] Challenge to Future Displays: Transparent AM- OLED Driven by PEALD Grown ZnO TFT S.-H. Ko Park, C.-S. Hwang, C.-W. Byun, M.-K. Ryu, J.-I. Lee, H. Y. Chu, and K.-I. Cho (ETRI, Korea) We have fabricated 3.5 transparent AM-OLED panel driven by PEALD grown ZnO TFT. The performance of ZnO thin film transistor was improved by adapting top gate structure, protection layer for ZnO from photolithography process, optimizing temperature and plasma power of ZnO growth process :40-12:00 A Gas Display Device with Electron Emitter S.-H. Son, M.-H. Nam, J.-M. Kim, S.-H. Cho, S.-H. Jang, G.-Y. Kim, I.- S. Han, D.-H. Kim, Y.-M. Cho, C.-W. Kim, and H.-B. Park (Samsung SDI Co. Ltd., Korea) A display device combining plasma display panel (PDP) and field emission display (FED) is proposed to achieve high luminous efficiency. The device can avoid the main energy loss channels of both PDP (ion loss) and FED (low CL efficiency). 2~6 -diagonal test panels with carbon nano-tube (CNT) electron emitter and Xenon ambient gas showed the luminous efficiency of 4.14lm/W and brightness of 263cd/m2 at 35V (1kHz, 1% duty), indicating that it is a good candidate for the low voltage driven, highly efficient next generation display :00-12:20 [Late News] Inkjet Printing of Single Wall Carbon Nanotubes for Transparent Conductive Films J.-W. Song, Y.-H. Yoon, J.-D. Kim, E. Lee (KIMM, Korea), B.-S. Choi, J.-H. Kim (A-Jou Univ., Korea), and C.-S. Han (KIMM, Korea) A single-walled carbon nanotube transparent conductive film (TCF) was fabricated using a simple inkjet printing method. The TCF could be selectively patterned by controlling the dot size to diameters as small as 34µm and achieved 71% film transmittance and a resistance of 900 ohm/sq sheet on flexible substrate. 104 IMID 2007 August 27-31,

56 August 30 (Thursday) Poster Session II Convention Hall II P2-1 Channel Orientation Dependent Electrical Characteristics of Low Temperature Poly-Si Thin-film Transistor using Sequential Lateral Solidification Laser Crystallization B. C.-m. Lai, Y.-H. Yeh, and B.-L. Liu (ITRI, Taiwan) The electrical characteristics of low temperature poly-si (LTPS) thin- film transistors (TFT) with channel parallel and perpendicular to the direction of lateral growth were studied. The poly-si film was crystallized using sequential lateral solidification (SLS) laser crystallization technique. The channel orientation dependent turn-on characteristics were investigated by using gateddiodes and capacitance-voltage measurements. P2-2 Performance of Thin Film Transistors Having an As- Deposited Polycrystalline Silicon Channel Layer W.-S. Hong, H.-J. Cho, T.-H. Kim, and K.-M. Lee (Seoul Nat l Univ., Korea) Polycrystalline silicon (poly-si) films were prepared directly on plastic substrates at a low (< 200 ) by using Catalytic Chemical Vapor Deposition (Cat-CVD) technique without subsequent annealing steps. Surface roughness of the poly-si layer and the density of the gate dielectric layer were found to be influential to the TFT performance. P2-3 Concept of Effective Gate-Source Overlap Length in Inverted-staggered TFT Structures K.-D. Jung, Y.-C. Kim, B.-J. Kim, B.-G. Park, H.-C. Shin, and J.-D. Lee (Seoul Nat l Univ., Korea) Analytic equations are derived from physical quantities in the gate- source overlap region and the concept of effective gate-source overlap length is proposed. The effective overlap length can be affected by gate voltage, insulator thickness and semiconductor thickness, and the overlap length should be larger than the length to obtain maximum driving current. P2-4 Dry Etching Behaviors of ZnO and Al2O3 Films in the Fabrication of Transparent Oxide TFT for AMOLED Display Application S. M. Yoon, C. S. Hwang, S. H. Ko Park, H. Y. Chu, and K. I. Cho (ETRI, Korea) We provide a newly developed dry etching process for the fabrication of ZnObased oxide TFTs. The etching characteristics of ZnO (active layer) and Al2O3 (gate insulator) thin films were systematically investigated when the etching gas mixtures and their mixing ratios were varied in the helicon-plasma etching system. P2-5 Reverse Annealing of Boron Doped Polycrystalline Silicon B.-J. Jin, W.-E. Hong, J.-Y. Lim (Hongik Univ., Korea) D.-H. Kim, T. Uemoto, C. W. Kim (Samsung Electronics Co., Ltd., Korea), and J.-S. Ro (Hongik Univ., Korea) Isothermal activation annealing was carried out using boron doped SLS polyusing an RTA system. We observed different behavior of reverse annealing depending on the implantation conditions. P2-6 The Characteristics of Poly-silicon TFTs Fabricated using ELA for AMOLED Applications H.-J. Son, J.-H. Kim, S.-W. Jung, J.-I. Lee, K.-S. Jang (Sungkyunkwan Univ., Korea), H.-Y. Chung, B.-D. Choi, K.-Y. Lee (Samsung SDI Co. Ltd., Korea), and J.-S. Yi (Sungkyunkwan Univ., Korea) In this paper, the properties of n-channel poly-si TFTs with different channel widths are reported. Poly-Si fabricated using ELA on glass substrates has high quality as a material for applications such as TFT-LCDs. The fabricated n- channel TFTs have a double stack structure of oxide-nitride which acts as an insulator layer. The results show that the small channel TFTs exhibited a lower VTH and the wide channel TFTs had a higher IDSAT. P2-7 Characteristics of MINOS Structure using TiO2 as Blocking Layer for Nonvolatile Memory Applicable to OLED K.-S. Lee, S.-W. Jung, K.-H. Kim, K.-S. Jang, S.-H. Hwang, J.-I. Lee, H.- J. Park, J.-H. Kim, H.-J. Son, and J.-S. Yi (Sungkyunkwan Univ., Korea) Titanium dioxide (TiO2) is promising candidate for fabricating blocking layer of gate dielectrics in non-volatile memory (NVM). In this work, we investigated TiO2 as high dielectric constant material instead of silicon dioxide (SiO2), which is generally used as blocking layer for NVM. P2-8 Investigation on Electrical Properties of TIPS Pentacene Organic Thin-film Transistors by Cr Thickness of Suspended Source/Drain K.-S. Kim (KETI, Korea), K.-S. Chung (Kyung Hee Univ., Korea), Y. H. Kim, and J. I. Han (KETI, Korea) We investigated the effect of Cr thickness on the electrical properties of triisopropylsilyl pentacene organic thin-film transistor (OTFT) employing suspended source-drain electrode. The Cr thickness of 100 nm field-effect mobility of cm2/vs, on/off ratio 1.12x105, and subthreshold slope 1 V/decade. P2-9 Study on the Characteristics of the Organic Thin-film Transistors According to the Gate Electrode Surface Treatments H.-M. Kim, J.-H. Park, K.-W. Bong, J.-M. Kang, H.-J. Lee (Hongik Univ., Korea), C.-W. Han (LG.Philips LCD Co., Ltd., Korea), and J.-S. Choi (Hongik Univ., Korea) 106 IMID 2007 August 27-31,

57 Different surface treatments on gate electrode were adopted to change the workfunction of gate electrode. It is observed that the threshold voltage is about V for the device using base treated ITO as compare with for the device using bare ITO. P2-10 Characteristics of Organic Thin Film Transistors with UVtreated Surface of Synthesized Gate Insulator K.-W. Bong, J.-H. Park, J.-M. Kang, H.-M. Kim, H.-J. Lee (Hongik Univ., Korea), M.-H. Yi (KRICT, Korea), and J.-S. Choi (Hongik Univ., Korea) In this study, we report that the characteristics of OTFTs can be improved by the UV exposure of the surface of the synthesized photo- reactive gate insulator, and be optimized bycontrolling the exposure time. As a gate dielectric, the modified PVP was prepared by substituting hydroxyl group in PVP with cinnamoyl group. P2-11 Investigation of the ZnO based TFT Interface Properties with Synchrotron Radiation Analysis J.-K. Choi, M.-K. Baik, M.-H. Joo, K.-H. Park, J.-M. Lee, M.-S. Kim, and J.-H. Yang (LG Electonics Inc., Korea) The interface between SiNx and ZnO was investigated with Near Edge X- ray Absorption Fine Structure (NEXAFS) for ZnO based thin film transistor (TFT) applications. Impurity species were interstitial N2 molecules at the SiNx / ZnO interface. The evolution of N2 is decreased with increasing of anneal temperature. P2-12 Degradation of High Performance Short Channel N-type Poly-Si TFT under the Electrical Bias Caused by Self- Heating S.-H. Choi, I.-H. Song, H.-S. Shin, S.-G. Park, and M.-K. Han (Seoul Nat l Univ., Korea) We have investigated degradation of short channel n-type poly-si TFTs with LDD under high gate and drain voltage stress due to self- heating. We have found that the threshold voltage of short channel TFT is shifted to negative direction on the self-heating stress, whereas the threshold voltage of long channel is moved to positive direction. P2-13 Organic Thin-Film Transistors with Screen Printed Silver Source/Drain Electrodes S.-S. Kim, M.-S. Kim (Kumoh Nat l Inst. of Technology, Korea), G.-S. Choi, H.-G. Kim, Y.-B. Kim (Gumi Inst. of Electronics Technology, Korea), D.-G. Lee, and J.-S. Roh (Kumoh Nat l Inst. of Technology, Korea) We show that the electrical properties of organic thin-film transistors(otfts) can be enhanced by controll-ing the morphology of interface between screen printed electrodes and gate dielectrics. Modified surface of the insulator layer(sio2) affect on the interface energy of electrode on SiO2 layer. Contact angle measurement and FT- IR spectrum shows that the interface is properly modified. P2-14 Structural Effect on Backlight Induced-leakage Current in Amorphous Silicon Thin Film Transistor S.-Y. Kim, T.-H. Kim, J.-H. Jeon, H.-H. Choe, K.-W. Lee, and J.-H. Seo (Korea Aerospace Univ., Korea) Leakage current produced by backside illumination on bottom-gated amorphous silicon thin film transistor has been investigated. The experimental results show that the leakage current of bottom-gated structure is significantly dependent on the shape of amorphous silicon pattern. A proper design of amorphous silicon pattern has been suggested. P2-15 Surface Treatment Effect on Electrical Characteristics of Ink-Jet Printed Pentacene OTFTs Employing Suspended Source/Drain Electrode Y.-H. Park (Dankook Univ., Korea), Y.-H. Kim (KETI, Korea), J. Kang, M.- H. Oh (Dankook Univ., Korea), and J.-I. Han (KETI, Korea) The effect of gate insulator surface treatment on electrical characteristics of bottom contact and suspended source/drain organic thin-film transistors was studied. The surface treatment by HMDS improved the performance of the BC OTFT, but it degraded the performance of the SSD OTFT. P2-16 The Effect of Hafnium Dioxide Nanofilm on the Organic Thin Film Transistor W.-S. Choi and Y.-G. Song (Hoseo Univ., Korea) Hafnium dioxide nano film as gate insulator for organic thin film transistors is prepared by atomic layer deposition. Mostly crystalline of HfO2 films can be obtained with oxygen plasma and with water at relatively low temperature of 150. HfO2 was deposited as a uniform rate 1.2A o /cycle. The morphology and performances of OTFT will be discussed. P QVGA LTPS LCD Panel Integrated with Ambient Light Sensor C.-S. Weng, C.-W. Chao, H. W. Tseng, C.-T. Peng, K.-C. Lin, and F.-Y. Gan (AU Optronics Corp., Taiwan) Planar PIN photodiode is compatible with LTPS process, and its fabrication requires no additional manufacturing process. In this study we design the optimum dimension of PIN diodes with two nitride layers to improve the efficiency of PIN diodes. The PIN photo sensor shows very good sensitivity to ambient light illuminance. P Dimensional Spatial Averaging Driving Methods for High Speed Driving of AMLCDs B.-H. You, J.-P. Lee, D.-G. Kim, J.-H. Park, Y.-J. Kim, B. H. Berkeley, and S.-S. Kim (Samsung Electronics Co. Ltd., Korea) A new driving method employing 2-dimensional spatial averaging is proposed. This method successfully eliminates the vertical line artifact caused by luminance difference from unbalanced charging voltage between polarities. This 108 IMID 2007 August 27-31,

58 spatial averaging method can secure charging time, minimize driver heating, and achieve higher display quality. P2-19 A Novel Pixel Structure Suitable for Color Scanner Embedded TFT-LCD K. Choo, H. Kang, J.-H. Yu, M. Y. Do, K. H. Choo, D. S. Lee, I. B. Kang, and I. J. Chung (LG.Philips LCD Co., Ltd., Korea) We developed a 4 inch (qvga, 320x240) a-si TFT LCD which has the function of color scanner. We have designed the novel pixel structure and got good scanning quality with minimum aperture loss. In this new pixel, the sensor capacitance was increased in double without decreasing the aperture loss. P2-20 Development of the Advanced Transflective LCDs with High Optical Performance J.-H. Lee, K.-H. Park, H.-H. Kim, J.-K. Yoon, K.-B. Park, and H.-H. Shin (LG.Philips LCD Co., Ltd., Korea) We have newly developed transflective LCDs with a specific sub-pixel and the single cell gap structure. In our structure, the overall transmittance and reflectance has become higher than typical transflective LCDs. Furthermore, it can simplify the fabrication process of the transflective LCDs. P2-21 The Electronic Structures and the Electrical Properties of ITO Thin Films by REELS and c-afm M.-K. Baik, M. Joo, J. Choi, K. Park (LG Electronics Inst. of Technology, Korea), M.-C. Sung, H.-N. Lee, and H.-G. Kim (LG Electronics Inc., Korea) We studied the surface defects and the current distributions of ITO thin films by reflected electron energy loss spectroscopy (REELS) and conductive-atomic force microscope (c-afm). The ohmic behavior of ITO thin film was observed at 230 annealed sample. The defects related to the electronic structure decreased after anneal process. P2-22 RC Oscillator Based on Organic Thin Film Transistor S. K. Kim, S. W. Kim, B. C. Moon, W.-S. Choi, and B. S. Bae (Hoseo Univ., Korea) Since organic thin film transistor (OTFT) provides simple and low cost processes, its application to the OTFT display has been studied. We developed an RC oscillator using organic thin film transistor and inverters with bootstrapping transistors. Device parameters were optimized by the simulation and OTFT RC oscillators were fabricated. P2-23 An Integrated Photodiode Fabricated by Low Temperature Poly-Si TFT Process S. M. Lee, D. L. Kim, T. H. Jung, K. Y. Heo, and H. J. Kim (Yonsei Uuiv., Korea) We have simultaneously fabricated LTPS TFTs and integrated photodiodes on the same glass substrates without any additional LTPS process. The structure of an integrated photodiode is a lateral p-i- n diode with a gate. The performances of a photodiode were improved at a negative gate voltage. P2-24 Dynamic Stress Analysis of a Bottom Gate TFT Having an Active Layer of Amorphous/Microcrystalline Si Double- Layers S. H. Pak, T. H. Jeong, S.-j. Kim, and H. J. Kim (Yonsei Univ., Korea) We have fabricated bottom gate TFTs with active layers of amorphous/ microcrystalline Si double layers (DL). Dynamic electric stresses were applied to DL TFTs and a-si TFTs to compare their degradation characteristics. The DL TFTs were more stable under dynamic stresses than a-si TFTs. P2-25 Study on the Stability of Organic Thin-Film Transistors Fabricated by Inserting a Polymeric Film as an Adhesion Layer G. W. Hyung, I. H. Park, J. H. Seo, J. H. Seo, H. B. Choi, and Y. K. Kim (Hongik Univ., Korea) We demonstrated that the threshold voltage shift owing to a gate-bias stress is originated from the trapped charges at the interface between semiconductor layer and dielectric layer, and such drawback can be settled by applying longterm delay time to the gate electrode. P2-26 Synthesis and Optical Characteristics of Green Emitting (Y,Gd)Al3(BO3)4:Tb Phosphor for PDP Application B. Y. Han, H. H. Shin, J. S. Yoo, and C. K. Kim (Chung-Ang Univ., Korea) An new green phosphor, (Y,Gd)Al3(BO3)4:Tb was synthesized by flux assisted solid reaction and its VUV excitation and emission characteristics were examined. The luminance of (Y,Gd)Al3(BO3)4:Tb at 147 nm excitation was higher than that of YBO3:Tb, while keeping the spectra and decay time of Tb ion same as those of YBO3:Tb. P2-27 Stability of Coated- Zn2SiO4:Mn Phosphor for PDP Application B. Y. Han and J. S. Yoo (Chung-Ang Univ., Korea) PDP is the emissive display device which uses the visible rays from the phosphors excited by vacuum ultraviolet rays, which were generated by discharging He-Xe, Ne-Xe mixed gas in R, G, B, cells. Consequently, the R, G, B phosphors determines the quality images of PDP. Many options to select the phosphors are available for PDP application, depending on the manufacture. For typical application, BaMgAl10O17:Eu, YBO3:Eu, Zn2SiO4:Mn are used as blue, red, green phosphors, respectively. But critical problems of green phosphor are coming to the front among these. P2-28 Photosensitive Black Matrix Paste for Bus Electrode of PDP C.-M. Woo, S. H. Kim, G.-D. Song, D. G. Kim, Y. S. Lee, H. Y. Cho, and L. S. Park (Kyungpook Nat l Univ., Korea) In this work we studied the effect of Co3O4 black powder and glass frit on the rheological property of photosensitive BM paste. We also examined how the size and content of black powder and glass frit affect the transmittance and 110 IMID 2007 August 27-31,

59 reflectance of the BM layer after sintering. P2-29 Effect of Binder Polymer on the Photolithographic Patterning of PDP Barrier Rib D. J. Kim (Kyungpook Nat l Univ., Korea), S.-M. Ryu (KAIST, Korea), D. G. Kim, C. M. Woo (Kyungpook Nat l Univ., Korea), S. H. Kim (Daegu Univ., Korea), D.-Y. Yang (KAIST, Korea), and L. S. Park (Kyungpook Nat l Univ., Korea) In this study, the effect of binder polymer on the photolithographic patterning of barrier ribs was studied from view point of polymer structure and barrier rib pattern. P2-30 Patterning of the ITO Electrode of AC PDP using Nd:YVO4 Laser K. H. Kim, M. H. Ahn, and S. J. Kwon (Kyungwon Univ., Korea) Laser-ablated ITO patterns showed the formation of shoulders at the edge of the ITO lines and a ripple-like structure of the etched bottom. When the laser ablation was applied in the fabrication of PDP panel, the laser-ablated ITO patterns showed a higher sustaining voltage than that of chemically wet-etched ITO. P2-31 Evaluation of the MgO Protective Layer Deposited by Oxygen Lon-Beam-Assisted-Deposition Method in ac PDPs Z. H. Li, E. S. Cho, S. J. Hong, and S. J. Kwon (Kyungwon Univ., Korea) MgO thin films were deposited by O+ IBAD method and results showed assisting oxygen ion beam energy plays a significant role in characteristics of MgO thin films. The lowest firing inception voltage, the highest brightness and the highest luminous efficiency were obtained when oxygen ion beam energy was 300 ev. P2-32 The Effect of the MgO Process on the Properties of AC- PDPs Y.-S. Kim, M.-S. Park, and B.-G. Ryu (LG Electronics Inc., Korea) The effects of the MgO fabrication process on the properties of AC- PDPs were examined. MgO films were deposited by e-beam evaporation with various substrate temperatures and oxygen flow rates. MgO films were analyzed by XRD, CL and ellipsometer. Panel properties such as luminance, efficiency, discharge voltage and discharge delay time were measured with test panels. P2-33 Measurement of Defect Energy Level in MgO Layer C. G. Son, K. B. Song, S. J. Jeoung, E. Y. Park, J. S. Kim, S. J., and E. H. Choi (Kwangwoon Univ., Korea) In this experiment, we have investigated the electronic structure of the energy band in the MgO layer responsible for the high? We used three kinds of MgO pellet that have another component, and each MgO layers have been deposited by electron beam evaporation method. P2-34 Sputtering Yield and Defect Energy Level Characteristics MgO Protective Layer According to O2 Partial Pressure in AC-PDPs S. J. Jung, C. G. Son, K. B. Song, S. H. Cho, H. J. Oh, G. S. Cho, S. O. Kang, and E. H. Choi (Kwangwoon Univ., Korea) We have investigated the sputtering and secondary electron emission characteristics of MgO protective layer according to the O2 partial pressure. The MgO layer have been deposited by electron beam evaporation method and have varied the O2 partial pressure as 0, 5.2x10-5, 1.0x10-4, and 4.1x10-4 Torr. P2-35 The Discharge Characteristic of Li Ion Doped MgO Film in a Flat Fluorescent Lamp Structure S. H. Ryu, S. E. Lee (Korea Polytechnic Univ, Korea), S. I. Ahn (Kyungwon Univ, Korea), and K. C. Choi (KAIST, Korea) This paper investigates how various concentrations of lithium ion influence on crystallization of MgO in thin films formed by spin coating and on the discharge characteristic in a flat fluorescent lamp structure. The XRD results indicate Li+ ion enhances the growth of MgO crystal in a spin coated thin film. The discharge property with the Li+ ion doped MgO films show the lithium ion in MgO film clearly reduce the initial discharge voltages of test devices. P2-36 Characteristics of Si Impurity Doped MgO in an ac PDP C. H. Ha (Seoul Nat l Univ., Korea), J. K. Kim (Hankyong Nat l Univ., Korea), and K. W. Whang (Seoul Nat l Univ., Korea) In this work, the discharge characteristics and temporal distribution of surface charges on the Si-doped MgO have been investigated and elucidated with the results of photon-induced surface current. Even though the Si doped MgO shows lower static voltage margin, higher luminous efficacy, and shorter statistical delay time, its discharge characteristics become deteriorated as the timing of scanning is delayed from the ramp type reset pulse down. P2-37 Effects of Surface Geometry of MgO Protective Layer for AC-PDPs S. Y. Park, S. H. Moon, T. W. Heo, J. H. Kim, J. Lee, and H. J. Kim (Seoul Nat l Univ., Korea) MgO films were deposited using the 2-step method; the bottom layer was deposited by normal method and the top layer was deposited on bottom layer with 85 by GLAD method. Results show that firing and sustain voltages improved as the sharpness of surface and isolated columnar structures increases, respectively. P2-38 Efficient White Organic Light-Emitting Diodes by Forming Major Excitons and Preventing T-T Annihilation J. H. Seo, J. H. Kim, J. H. Seo, G. W. Hyung (Hongik Univ., Korea), K. H. Lee (Sungkyunkwan Univ., Korea), Y. H. Kim, W. Y. Kim (Hoseo Univ., Korea), S. S. Yoon (Sungkyunkwan Univ., Korea), and Y. K. Kim (Hongik Univ., Korea) 112 IMID 2007 August 27-31,

60 We have demonstrated efficient white WOLEDs by using three emissive materials for primary colors (red, green, and blue). The characteristics of WOLEDs showed the maximum luminance of cd/m 2 at 13 V, the maximum luminous efficiency of 20.6 cd/a, and the CIEx,y coordinates of (x = 0.33, y = 0.33) at 10V. P2-39 Efficient White Organic Light-Emitting Diodes (WOLEDs) with Device Structure Modification J. H. Kim (ETRI, Korea), J. H. Seo, J. H. Seo, G. W. Hyung (Hongik Univ., Korea), K. H. Lee, S. S. Yoon (Sungkyunkwan Univ., Korea), and Y. K. Kim (Hongik Univ., Korea) An effective WOLED structure was demonstrated which improved a luminous efficiency and white color chromaticity independent on applied bias by employing effective carrier transporting layer, without any alteration of emissive materials. The modified WOLEDs exhibited 2 times higher luminous efficiency than the control device and showed balanced white emission during an operation. P2-40 Fluorescent White Organic Light-emitting Diode Structures with Dye Doped Hole Transporting Layer R. Galbadrakh (Nat l Univ. of Mongolia, Mongolia), H. S. Bang, H. I. Baek, and C. H. Lee (Seoul Nat l Univ., Korea) This work reports on three primary color fluorescent white organic light emitting diode (WOLED) with simple device structure where only a part of the hole transporting layer was doped with dye. The maximum luminance of the device reaches cd/m 2 at a drive voltage below 11V and external quantum efficiency of the device is above 1% in the wide range of luminance from 10 to cd/m 2 and reaches its highest 1.6% at 500 cd/m 2. P2-41 Improved EL Efficiency and Operational Lifetime of Topemitting White OLED with a Co-doping Technology M.-T. Lee and M.-R. Tseng (ITRI, Taiwan) Utilizing a co-doping technology for a dual-layer emitter of top- emitting WOLED can be improved the EL efficiency and operational lifetime by a factor of 1.2 and 3.4, respectively, through an efficient cascade energy transfer process. P2-42 The Effect of Surface Treatment on Interface Formation between Pentacene and Polymer Dielectrics S. J. Han, J. H. Kim (Hanyang Univ., Korea), Y. Park (Kyung Hee Univ., Korea), K.-H. Back, G.-H. Kim, L.-m. Do (ETRI, Korea), S.-H. Hong, D.- H. Kim, and J. W. Kim (KRISS, Korea) Electronic and structural properties of the interfaces formed by pentacene deposited on a polymer-based dielectrics are investigated by electron spectroscopy, atomic force microscopy, and water contact angle measurement. There is strong influence of surface treatment of the polymer dielectrics on the energy level alignment and the surface topography upon the pentacene deposition. P2-43 New Developed Color Conversion OLED Backlight O. G. Lee, N. H. Lee, J. H. Lee, K. S. Kim (KOT Inc., Korea), and W. Y. Kim (Hoseo Univ., Korea) Color conversion technology using unique color conversion film for OLED back light was developed to achieve renovative performance for high- end display. It can reduce the production cost more than 20% due to cheaper cost for blue OLED and conversion film and also has a free chromaticity control capability for 10% raising color gamut with respect to LCD color filter. The OLED BLU by color conversion technology also shows excellent performances such as chromaticity stability. P2-44 Optical Simulation for Transparent and Top Emission PLEDs to Optimize the Metal/ITO Cathode Y.-C. Tsai, C.-C. Chen, K.-C. Liu (Chang Gung Univ., Taiwan), Y.-T. Chang, and J.-H. Lee (Nat l Taiwan Univ., Taiwan) A simulation method has been purposed in this paper to optimize the stack structure of metal/ito cathode for full transparent or top emission devices. The result demonstrates that the complexity of the two proper layers thicknesses design is reduced. Finally, the experiment data also strain the simulation result. P2-45 High-Performance Flexible Organic Light-Emitting Devices using Amorphous Indium Zinc Oxide Anode J.-W. Kang (KIMS, Korea), W.-I. Jeong (Seoul Nat l Univ., Korea), H.-K. Kim (Kumoh Nat l Inst. of Technology, Korea), D.-G. Kim, G.-H. Lee (KIMM, Korea), and J.-J. Kim (Seoul Nat l Univ., Korea) The amorphous IZO on flexible substrate (PC) shows similar electrical conductivity and optical transmittance with commercial ITO glass even though it was prepared at <50. Moreover, it exhibits little resistance change during 5000 bending cycles, demonstrating good mechanical robustness. A green phosphorescent OLED fabricated on amorphous IZO on flexible PC shows maximum external quantum efficiency of Áext=13.7 % and power efficiency of Áp =32.7 lm/w, which are higher than a device fabricated on a commercial ITO on glass ( Áext=12.4 % and Áp =30.1 lm/w) and ITO on flexible PC ( Áext=8.5 % and Áp =14.1 lm/w). P2-46 Compared Electrical and Optical Characteristics of White Organic Light-emitting Diodes using Two Complementary and Three Primary Colors Y.-H. Kim, J. Y. Choi, S. H. Lee, H. S. Yoon (Hoseo Univ., Korea), J. H. Seo, J. H. Park, Y. K. Kim (Hongik Univ., Korea), and W. Y. Kim (Hoseo Univ., Korea) We fabricated white organic light emitting diodes(woled) having two complementary and three primary colors with emission layers of DPVBi/MADN:DCM2-0.5% and DPVBi/Alq3/MADN:DCM2-1.5%, respectively. WOLED using three primary colors shows broad electroluminescence included green emission peak at 510nm while optical properties of the two complementary WOLED was higher current efficiency of 114 IMID 2007 August 27-31,

61 6.2 cd/a than 4.9 cd/a of three primary color WOLED. P2-47 Study of White Light Emission with Three or Two Color in Multi Organic Emitting Layers with DCJTB, DPVBi and Coumarin6 S.-J. Yoo (Kyonggi Univ., Korea), C.-J. Lee (KETI, Korea), D.-W. Kim (Kyonggi Univ., Korea), and J.-I. Han (KETI, Korea) Using a blue emitting DPVBi material and red dopant DCJTB, WOLEDs with and without green emitter C6 added in Alq3 have been fabricated. WOLED of three colors added green dye have been shown turn-on voltage of 3.25V, and EL efficiency 8102 cd/m 2, CIE coordinates ( ). P2-48 Device Characteristics of White OLED using the Fluorescent and Phosphorescent Materials Coupled with Interlayer Y. H. Lee, J.-K. Kim, J.-w. Yoo (KIST, Korea), B.-K. Ju (Korea Univ., Korea), J. H. Kwon, W. S. Jeon (Kyung Hee Univ., Korea), and B. D. Chin (KIST, Korea) We fabricated white organic light emitting device (WOLED) with the layered fluorescent blue material and phosphorescent green/red dye- doped materials. Addition of the non-doped phosphorescent host material between the fluorescent and phosphorescent light emitting layers provided the result of broadband white spectrum, with improved balance, higher efficiency, and lower power consumption. P2-49 Improved Light Extraction of Organic Light Emitting Diode With Microcavity Structure based on SiO2/TiO2/SlO2 Multi 1D Layer N. S. Kang, J.-K. Kim, J.-w. Yoo (KIST, Korea), B.-K. Ju (Korea Univ., Korea), and B. D. Chin (KIST, Korea) In this work, We have modeled and fabricated microcavity OLED using the 1- dimensional distributed a Bragg reflector model (DBR). Results show that simulation spectrum intensity of microcavity OLED increased over 30% than conventional OLED using DBR with TiO2 and SiO2. P2-50 Change of Internal Resistance of OLED Devices during Operation S.-s. Lee (Sunmoon Univ., Korea), H. Hwang (NeoView KOLON, Korea), and S.-k. Lim (Dankook Univ., Korea) The luminance and operating voltage were measured to analyze efficiency and change of internal resistance. The half lifetime of OLED was affected by degradation of OLED due to heat by generated by ambient temperature and self heating. The operating voltage constantly increased due to the increase of internal resistance. The half lifetime of OLED driven by constant current source was found longer than that of the OELD driven by constant voltage and the reasons were clearly explained in this paper. P2-51 Enhancement of the Luminous Efficiency of Organic Lighteemitting Diodes Utilizing a Wide-bandgap Impurity Doped Emitting Layer D. C. Choo, H. S. Bang, B. C. Kwack, T. W. Kim (Hanyang Univ., Korea), J. H. Seo, and Y. K. Kim (Hongik Univ., Korea) The electrical properties of organic light-emitting devices (OLEDs) with widebandgap impurity-doped emitting layers (EML) were investigated. While the luminous efficiency of OLEDs with a NPB or a DPVBi-doped Alq3 EML did not vary significantly with the current density, that of the OLEDs with a BCPdoped Alq3 EML changed dramatically. P2-52 Efficiency Enhancement Mechanism in Organic Lightemitting Devices with Multiple Heterostructures Acting as a Hole Transport Layer S. M. Han, K. S. Lee, D. C. Choo, T. W. Kim (Hanyang Univ., Korea), J. H. Seo, and Y. K. Kim (Hongik Univ., Korea) The electrical and the optical properties of organic light-emitting devices (OLEDs) with or without multiple heterostructures acting as a hole transport layer were investigated. The efficiency enhancement mechanism in the OLEDs with multiple heterostructures is described on the basis of the electrical and the optical results. P2-53 Stabilization of the Luminance Efficiency in the Blue Organic Light-emitting Devices Utilizing CBP and DPVBi Emitting Layers H. S. Bang, D. C. Choo (Hanyang Univ., Korea), J. H. Park, J. H. Seo, Y. K. Kim (Hongik Univ., Korea), and T. W. Kim (Hanyang Univ., Korea) The electrical and the optical properties of blue organic light-emitting devices (OLEDs) with a multiple emitting layer (EML) acting as electron and hole trapping layers were investigated. While the luminance efficiency of the OLEDs with a multiple EML was very stable, regardless of variations in the applied voltage. P2-54 Electronic Charge Transfer at the Alq3/Ba and Alq3/Au Interfaces by NEXAFS Spectroscopy J.-T. Lim and G.-Y. Yeom (Sungkyunkwan Univ., Korea) To understand the electronic charge transfer from cathode to an ETL in the TEOLED, the pristine Alq3 thin film and the interfaces of both Alq3/Ba and Alq3/Au were investigated by using the NEXAFS spectroscopy. The unoccupied energy state of each interface using the NEXAFS Analyses at the C and O K-edges was assigned and charge transfer from Ba to π of Alq3 was investigated in detail. P2-55 Study of White Polymer Light Emitting Diode with Blending Method B.-W. Shin, S.-Y. Lee, E.-W. Lee, and H.-R. Lee (Kyungpook Nat l Univ., Korea) In this study, we report the luminescent properties of white polymer light 116 IMID 2007 August 27-31,

62 emitting diode (WPLED) fabricated by soluble methods with poly- fluorenebased polymers blends which emit blue and yellow light. A device structure of ITO/PEDOT:PSS/ Emissive Layer (EML)/Al was employed. P2-56 Improved Efficiency of Organic Light-Emitting Diodes with Doped Transporting Layer J. H. Seo, J. H. Park, J. H. Kim, J. H. Seo, G. W. Hyung, and Y. K. Kim (Hongik Univ., Korea) We demonstrate p-doped organic light emitting diodes (OLEDs) comprising tungsten oxide (WO3) and 1,4-bis[N-(1-naphthyl)-N - phenylamino]-4,4 diamine(npb). We propose the NPB : WO3 composition functions as a p- doping layer which significantly improves hole injection that leads to the fabrication of 4-(dicyano-methylene)-2- methyl-6-(p-dimethylaminostyryl)- 4H-pyrane (DCM1) based p-doped OLEDs with high efficiency and long lifetime. P2-57 Effect of Ambient Gas on the Early Stage of the OLED Degradation J. Kwak, H. Cho, Y.-T. Hong, and C. Lee (Seoul Nat l Univ., Korea) We report on the effect of ambient gas on the OLED degradation. The operating voltage and quantum efficiency increases when the device is exposed to the atmospheric gas and then returns to the initial level of the device in vacuum. These changes can be attributed to the ambient gas pressure. P2-58 The Optimization of Efficient White Organic Light-Emitting Diodes using a Blue Fluorescent and a Red Phosphorescent Dopant J. H. Seo, J. H. Kim, J. H. Seo, G. W. Hyung, J. H. Park (Hongik Univ., Korea), K. H. Lee, S. S. Yoon (Sungkyunkwan Univ., Korea), and Y. K. Kim (Hongik Univ., Korea) We have demonstrated the optimization of white organic light-emitting diodes with two separated emissive layers using a blue fluorescent and a red phosphorescent dopant. The maximum luminous efficiency of the devices showed 7.93, 9.70, 11.8, and 14.3 cd/a. The CIEx,y coordinates also showed (x = 0.33, y = 0.36), (x = 0.33, y = 0.35), (x =0.31, y = 0.35), and (x = 0.29, y = 0.36) at 6V, respectively. P2-59 Relaxation of Roll-off Characteristics in Organic Electrophosphorescence Diodes K. S. Son, M. Yahiro (Kyushu Univ., Japan), T. Imai (Chitose Inst. of Science and Technology, Japan), H. Yoshizaki (Koei Chemical Co., Japan), and C. Adachi (Kyushu Univ., Japan) We demonstrate relaxation of roll-off characteristics by controlling the dopant concentrations and the thickness of an emitter layer in electro- phosphorescence diodes composed of 2,6-dicarbazolo-1,5- pyridine (PYD2)-host doped with 25 wt%-iridium( )bis[(4,6-di- fluorophenyl)-pyridinato-n,c 2 ] picolinate (FIrpic). P2-60 Novel Measurement Method for Image Sticking based on Human Vision System G.-c. Park, J.-s. Lee, J.-h. Souk (Samsung Electronics Co., Ltd., Korea), and J.-s. Yi (Sungkyunkwan Univ., Korea) This paper introduced a measurement method for image sticking based on human vision sytem. Existing image sticking quantification method is mostly different from visible level by human perception. The new measurement method is possible to evaluate a large quantity of samples in fast and high correlation with human perception. P2-61 Convertible 3D-2D Display by Use of Integral Imaging System with Plastic Fiber Array Y. Kim (Seoul Nat l Univ., Korea), H. Choi (Samsung Electronics Co., Ltd., Korea), S.-W. Cho, Y. Kim, J. Kim, G. Park, and B. Lee (Seoul Nat l Univ., Korea) A three-dimensional (3D)-two-dimensional (2D) convertible display system using a plastic fiber array is proposed. The proposed system has an advantage of making use of a light source for 3D image from an arbitrary location. The optical efficiency of 3D images in the proposed system is enhanced compared with previous research. P D Information of Object by Modified Goldstein Algorithm at Digital Holography S. K. Yoon and S.-K. Kim (KIST, Korea) Generally many kind of phase unwrapping method are used to obtain threedimensional feature in digital holography. Goldstein algorithm is representative method. But Goldstein algorithm has some problems. We developed a modified Goldstein algorithm using the boundary information. Obtained threedimensional information can be applied to 3-D contents of stereoscopic, multiview, SMV, or holographic display. P2-63 A Study on Compensation of Distorted 3D Depth in the Triple Fresnel Lenses Floating Image System K.-H. Lee, S. H. Kim, Y. S. Yoon (Konkuk Univ., Korea), and S.-K. Kim (KIST, Korea) We proposed the method to take 3D image having correct depths to the front and rear directions when the stereogram was displayed to an observer through an optical system. Since the magnified stereogram by lenses was not given correct depth to an observer despite having the same magnified disparity. P2-64 Analysis of Image Quality Based on Perceptual Vision L. Xue (Shandong Univ. of Science and Technology, China), Y. Hua (Shenyang Inst. of Technolofy, China), and Y. Qi (Shandong Univ. of Science and Technology, China) This paper deals with image quality analysis considering the impact of psychological factors involved in assessment. The attributes of image quality 118 IMID 2007 August 27-31,

63 requirement were partitioned according to the visual perception characteristics and the preference of image quality were obtained by the factor analysis method. The features of image quality which support the subjective preference were identified. P2-65 The Acceptable Limit of the Contrast Ratio of LCD TV based on Human Visual System K. H. Shin, J. W. Moon, S. A. Park, J. Y. Ahn, D. W. Kang, and H. H. Shin (LG.Philips LCD Co., Ltd., Korea) Visual perception experiments were conducted to determine the acceptable limit of the contrast ratio of LCD TV under the watching condition. The results showed that the corresponding contrast ratio should be below 10,000:1 at the 3H(height of screen) distance in the living room environment. P2-66 Auto-stereoscopic 60 View 3D using Slanted Lenticular Lens Array H.-J. Im, B.-J. Lee, H.-k. Hong, and H.-H. Shin (LG.Philips LCD Co., Ltd., Korea) Auto-stereoscopic 3D of 60-view number is made using slanted lenticular lens array and LCD of 15.1 inch diagonal size and 3200 by 2400 pixel numbers. Due to its large view number, smooth motion parallax is observed and the visual fatigue is reduced. P2-67 Distance Measurement using Stereo Camera and 3D Implementation with 3D Display Devices H. Song (KETI, Korea), J. Bae (KIPA, Korea), J. Choi (Chung-Ang Univ., Korea), and B. Choi (KETI, Korea) Depth data for is very important data for 3D display. Disparity and depth data makes users to feel 3D effect. We used stereo camera to measure depth and made fast algorithm to get in real time. This vision system can be substituted for expensive laser system. P2-68 New Texture Prediction for Multi-view Video Coding J. H. Park, Y.-H. Kim, and B. Choi (KETI, Korea) This paper introduces a new texture prediction for MVC which is currently being developed as an extension of AVC/H.264. The proposed method utilizes similarity of interview residual signal and can provide an additional coding gain. It is claimed that up to 0.2dB PSNR gain with 1.4% bit-rate saving is obtained. P2-69 Effect of Additives on Luminescence Properties of Longpersistence Phosphor SrAl2O4:Eu 2+,Dy 3+ S.-D. Han (KIER, Korea), K. C. Singh (Mabarshi-Davarand Univ., India), J. Gwak, T.-Y. Cho, J.-D. Kim, and C.-H. Han (KIER, Korea) Long afterglow SrAl2O4:Eu 2+,Dy 3+ is synthesized by a solid state reaction. The effect of flux B2O3 on the sintering dynamic process, the optimum concentrations of Eu 2+ and Dy 3+ for long lasting bright luminescence property and the effect of charge compensators like Mg 2+, Zn 2+, Na +, K + on long persistence have been investigated. P2-70 Liquid Crystal Display with High and Stable Color Gamut by using Pre-compensated Tri-chromatic LED Backlight T.-L. Chiu and J.-H. Lee (Nat l Taiwan Univ., Taiwan) We demonstrate a high color gamut liquid crystal display (LCD) system (>100 %) by using a pre-compensated tri-chromatic LED-backlight module over a temperature range of (25 to 70 ), whose pre- compensated optical characteristic balances the spectral redshift and intensity decrease due to the temperature rising during operation. P2-71 Dependence of Xe Plasma Flat Fluorescent Lamp On the Electrode Gap J.-H. Kang, Y.-K. Lee, S.-T. Heo, M.-H. Oh, and D.-G. Lee (Kumoh Nat l Inst. of Technology, Korea) a coplanar-type plasma flat fluorescent lamp having cross type of electrode was fabricated by screen printing and sealing technique. Cross type of electrode with a dielectric layer were screen-printed on a rear glass plate, and then fired at 550. Phosphor was printed on and fired at 450. P2-72 Emission Characteristics of Flat Fluorescent Lamp for LCD Backlight using Inert Gas Mixture S.-T. Heo, Y.-K. Lee, J.-H. Kang, S.-i. Yoon, M.-H. Oh, and D.-G. Lee (Kumoh Nat l Inst. of Technology, Korea) In this study, flat fluorescent lamps (FFLs) having surface discharge structures was fabricated by screen printing technique and were studied using spectraradiometer and square pulse power supply. Two types of FFLs having different shapes of electrodes (cross-type and line-type structure) were compared with variation of discharge shape and mixed gas ratio. P2-73 Synthesis and Luminescent Property Investigation of the Mg4GeO2:Mn for LEDs S. J. Lee, J. K. Park, K. N. Kim, P. K. Bae, C. H. Kim, H. J. Chang (KRICT, Korea), and Y. R. Kim (Yonsei Univ., Korea) In this report, Manganese doped magnesium germanate (Mg4GeO2:Mn) phosphor has been synthesized by the solid state method. Also, this phosphor was prepared by simple process under an air atmosphere for oxidation of Mn. The prepared phosphor shows a main luminescent peak at 661nm. P2-74 Luminescent Properties of Mn 2+ Co-Doped Ca8Mg1 (SiO4)4Cl2:Eu2+ Phosphor and Application in White LEDs S. H. Park, J. K. Park, C. H. Kim, H. J. Chang (KRICT, Korea), and H. G. Jang (Korea Univ., Korea) The Manganese co-doped Ca8Mg1(SiO4)4Cl2:Eu 2+ phosphor was synthesized by solid-state reaction and its photoluminescence characteristics were investigated. The synthesized phosphor show two-emission spectrums: green band of 512nm and yellow band of 550nm. White LED were fabricated through combination of a 405nm emitting InGaN chip and a synthesis phosphor in a single package. 120 IMID 2007 August 27-31,

64 P2-75 Tuning Effects of High Optical Efficiency on External Electrode Fluorescent Lamp K. S. Kim, H. W. Jeon, J. W. Hong, J. H. Yoon, J. B. Kim, B. K. Jeong, J. K. Shin, and I. J. Chung (LG.Philips LCD Co., Ltd., Korea) We made a high-efficiency lamp with same spec. as a normal lamp by improving physical constants of a lamp and then analyzed varied effects. By applying novel physical constants to an EEFL, we acquired decrease of lamp operating power and voltage. P2-76 Effect of Heat Treatment Condition on Optical Properties of ZnS:Mn,Cu,Cl Phosphor H.-S. Lee, T.-Y. Cho, J. Gwak, S.-D. Han, C.-H. Han, S.-H. Park, and I.-S. Chun (KIER, Korea) ZnS-based orange-emitting phosphors were synthesized by two-step firing process: above 1000 to obtain hexagonal phase, and at 750 for cubic phase. The effect of heat treatment condition on the optical properties was investigated to find an optimum condition for high-performance ZnS:Mn,Cu,Cl phosphor. P2-77 Effect of Cu Concentration on the Luminescence of ZnS:Cu,Cl Blue-green Phosphor T.-Y. Cho (Hanyang Univ., Korea), H.-S. Lee, S.-D. Han, J. Gwak (KIER, Korea), D. H. Shin (EL Korea Corp., Korea), and C.-H. Han (KIER, Korea) ZnS:Cu,Cl phosphor was synthesized by solid-liquid state reaction with two firing steps. Each stage of the process was carefully monitored so that the final product was comparable to commercially- available phosphor. The effect of Cu 2+ -doping concentration has been investigated on the luminescence characteristics of ZnS:Cu,Cl blue- green phosphors for inorganic electroluminescent device. P2-78 Organic Passivation Material-Polyvinyl Alcohol (PVA)/ Layered Silicate Nanocomposite-for Organic Thin Film Transistor T. Ahn, H. J. Suk, and M. H. Yi (KRICT, Korea) We have synthesized novel organic passivation materials to protect organic thin film transistors (OTFTs) from H2O and O2 using polyvinyl alcohol (PVA)/ layered silicate (SWN) nano composite system. Up to 3 wt% of layered silicate to PVA, very homogeneous nanocomposite solution was prepared. P2-79 Carbon Nanotube-coated ZnGa2O4:Mn 2+ Phosphor for Field Emission Display J. H. Park, B. W. Park, N. S. Choi, and J. S. Kim (Pukyong Nat l Univ., Korea) Carbon nanotubes (CNTs) are coated on green ZnGa2O4:Mn 2+ phosphor for filed emission display. The cathodoluminescent intensity of CNTs- phosphor is improved compared with uncoated phosphors. Also the effects of phosphorscoated CNTs on electrical and degradation characteristics are investigated to reveal the reason of the enhanced emission intensity. P2-80 Field Emission Lamp for LCD Backlight based on RGB Phosphors and Vertically-aligned CNTs B. W. Park, N. S. Choi, S. H. Kim, Y. T. Jeong, and J. S. Kim (Pukyong Nat l Univ., Korea) Zinc gallate-based RGB phosphors and vertically aligned carbon nanotube emitters are prepared for flat field-emission lamp. The blend phosphors of blue ZnGa2O4, green ZnGa2O4:Mn 2+, and red ZnGa2O4:Cr 3+ are coated on the front glass, and the carbon nanotubes are chemically bonded on the rear ITO glass as a cathode. P2-81 Luminescence Properties of YVO4:Eu 3+ Thin Film Phosphor Deposited by RF Magnetron Sputter Deposition Technique J. H. Kang, J. Han, H. S. Jang, H. S. Yoo (KAIST, Korea), S. J. Yun (ETRI, Korea), and D. Y. Jeon (KAIST, Korea) YVO4:Eu 3+ thin film phosphor samples have been deposited by using RF magnetron sputtering technique with various deposition temperatures. The Effect of deposition temperatures (RT to 450 ) on morphological, crystal structure, and luminescence properties of YVO4:Eu 3+ thin film phosphor has also been investigated. P2-82 Photoluminescence Properties of Core/Shell-type LnPO4:Eu/LnPO4 (Ln= La, Gd) Nanophosphors J.-S. Oh and H.-K. Jung (KRICT, Korea) To overcome defect due to large surface of nanoparticle, a redispersible Eu doped LnPO4:LnPO4 core/shell nanoparticles were prepared in a high-boiling coordinating solvent. The particle size of the synthesized core/shell nanophosphors was estimated to be about 8 nm by TEM. In this core/shell nanoparticle, the concentration of Eu ion was optimized on the basis of the emission intensity under UV ray excitation. P2-83 Optimized LGP for Blue LED Y.-m. Jeong, D.-h. Kim, C. K. Hwang Bo (Inha Univ., Korea), and Y. J. Ahn (KDT Corp., Korea) In study, we ve disigned LGP that have optimized pattern for blue LED. We used to have active area 3.5 of LGP and blue led(6ea) of LUXPIA in Korea. Also, we made Pattern Generation. P2-84 BGR Mixture Phosphor for White-light-emitting Diode of Liquid Crystal Display Backlight S. H. Lee, J. H. Park, K. I. Seo, and J. S. Kim (Pukyong Nat l Univ., Korea) BGR mixture phosphor pumped by 400 nm is developed for white-lightemitting diode of liquid crystal display backlight. White-emitting phosphor is prepared by mixing Ba2SiO4:Eu 2+ and (Ba, Sr)3MgSi2O8:Eu 2+, Mn 2+ phosphors. 122 IMID 2007 August 27-31,

65 P2-85 VUV Luminescence Properties of a Novel Green-emitting (Y,Gd)Ga3(BO3)4:Tb Phosphor Y.-M. Moon, S. Choi (KRICT, Korea), S. H. Lim (Korea Univ., Korea), and H.-K. Jung (KRICT, Korea) Tb 3+ -activated green-emitting (Y,Gd)Ga3(BO3)4 phosphor has been investigated. The main absorption was in the 120~238 nm and exhibited a green emission with the 545 nm and several peaks due to inner shell transition of Tb 3+ ion. With the optimized Tb 3+ concentrations, the maximum emission brightness was 90% of the Zn2SiO4:Mn phosphor. P2-86 Photoluminescence Properties of Gd1-xLnxCa3(GaO)3(BO3)4 (Ln=Eu, Tb, Tm) under UV Excitation H.-A. Kyung, H.-K. Jung (KRICT, Korea), and T.-Y. Seong (Korea Univ., Korea) A borate compound was adopted as new host material for Eu 3+, Tb 3+ and Tm3+ activators. The phosphor samples, Gd1-xEuxCa3(GaO)3(BO3)4, Gd1- xtbxca3(gao)3(bo3)4 and Gd1-xTmxCa3(GaO)3(BO3)4 have been synthesized by conventional solid-state reaction. The crystalline phase for the resulting powders was identified using an X-ray diffraction system.1 Their photoluminescence properties under the excitation of UV ray were investigated. P2-87 Analysis of Flat Fluorescent Lamp Discharges for LCD Backlight Unit by using Two-dimensional Fluid Simulation Code H. J. Yoon, C. S. Ha, and H. J. Lee (Pusan Nat l Univ., Korea) A two-dimensional fluid simulation code has been developed in order to investigate discharge phenomena and to improve plasma luminous efficiency in a Hg flat fluorescent lamp for an LCD backlight unit. The effects of various parameters, such as gas pressure, driving voltage, frequency, and gas mixture ratio, are investigated. P2-88 A Novel Red Light-emitting Material and the Characteristics of OLEDs using the Same as Red Dopant S.-H. Lim, J.-H. Park, J. H. Seo, G. Y. Ryu, Y. K. Kim, and D.-M. Shin (Hongik Univ., Korea) ABCV-Py, a new red fluorescent material, has been synthesized for use in OLED application. Performance of red doped electroluminescent devices using ABCV-Py as dopant were measured with various host materials. The performance of device with DPVBi host material was better than those with other host materials. P2-89 Effects of the Xe Content on the Electro-optical Properties in the Mercury-free Flat Fluorescent Lamp K.-Y. Chung, S.-M. Lee (Kyungpook Nat l Univ., Korea), Y.-C. Jeong (HEESUNG Electronics Ltd., Korea), and S.-H. Sohn (Kyungpook Nat l Univ., Korea) Xe content is one of important factors related to characteristics of the mercuryfree flat fluorescent lamp. The electro-optical properties of lamp were investigated for wide range of Xe content in Xe-Ne mixing gas. The maximum luminance of 9,289 cd/m 2 and efficacy of 3 lm/w was obtained with Xe 90 %. P2-90 Low-k and High Reflectance Material as a Filler for Flat Panel Display Devices J. Lee, J. Kim, W. Sung, S. Hwang, and H. Kim (Inha Univ., Korea) The composites were fabricated with titania used commercially and calcite as a filler in BZB glass matrix and their thermal, optical and electrical properties were investigated. From our results, calcite may be the profitable and highly efficient reflectance material as a filler for flat panel display devices. P2-91 The Research of RGB Photo Resistant in the Ink-Jet System C.-Y. Huang, C.-I. Liu, K.-Y. Tsao, J.-C. Kuo, J.-Y. Wu (Tatung Univ., Taiwan), Y.-C. Lo, P.-Y. Liu, J.-M. Wang, and H.-A. Li (Chunghwa Picture Tubes, Ltd., Taiwan) The purpose of this research is to control proper processing condition of RGB photo resistant in the ink-jet process increasing processing ability by adding additives. The viscosities of modified RGB photo resistant were 10~ 14cps and the additives could decreased agglomeration and flowing trace of photo resistant effectively. Another way, the adhesion between photo resistant and glass substrate was improved by modifying photo resistant and substrate. P2-92 Evaluation of Optical Components in the Backlight Unit of LCD-TVs J. Jeong, M. Shin, J. Kim, M. Lee (Kwangwoon Univ., Korea), H. Jeong, J. Kim (Korea Inst. of Lighting Technology, Korea), B. Hong, E. Choi, and G. Cho (Kwangwoon Univ., Korea) The influence of optical components constituting the backlight of TV on the luminance property of backlight was analyzed. The variation of luminance when the light emitted from light source passes each optical part was evaluated. P2-93 Pt Nanoparticles-coated Carbon Nanofiber for FED Application W.-W. Lee, Y. Choi, and B.-H. Ryu (KRICT, Korea) In this study, we prepared CNF (carbon nanofiber) by the solvothermal method for FED (field emission display) applications.nano-sizesd Pt nanoparticles were coated on the CNF. In this study, we have applied Pt nanoparticles- coated CNF which can be produced in mass, to field emission application. P2-94 Spectral Properties of Various Y3Al5O12:Ce 3+ Nanocrystalline Phosphors for the Application to White LEDs H. Yang, M.-J. Jeon (Hongik Univ., Korea), and Y.-D. Huh (Dankook Univ, Korea) Various yellow-emitting Y3Al5O12:Ce 3+ (YAG:Ce) nanocrystalline phosphors, where some Al 3+ sites are substituted with Ga 3+ or some Y sites with Gd 3+, have 124 IMID 2007 August 27-31,

66 been synthesized. The rare earth ions such as Pr 3+ and Tb 3+ were also co-doped into YAG:Ce system, leading to the tunability of CIE coordinates of emission. P2-95 Analysis of the Horizontal Block Mura Defect Z. Mi, G. Jian, and L. Chunping (Beijing BOE Optoelectronics Technology Co.,Ltd., China) In TFT-LCD, mura is a defect which degrades the display quality. The resistance difference between gate lines is the main cause of H-Block mura. Two methods could eliminate this defect. A thinner gate layer or gate fan-out pattern decrease mura level. H-Block mura has been reduced after implementing the new schemes. P2-96 TPS Analysis of NPB Organic Thin Film for Belt Source Evaporation in AMOLED Manufacturing C. H. Hwang (OLEDON, Co., Ltd. Korea) TPS (Temperature Programmed Sublimation) technology is known to research for the plane evaporation of the organic film.[5] Using TPS technology, the plane source evaporation of NPB organic film has been studied for the first time. The NPB organic film consists of nano scale film phase and bulk phase on a substrate. The 400 in film phase thickness of NPB sublimates at the 175 of the Ta made metal plate. P2-97 TPS Analysis of Various Metal Plates for Belt Source Evaporation in AMOLED Manufacturing C. H. Hwang (OLEDON, Co., Ltd. Korea) The TPS (Temperature Programmed Sublimation) technology has been developed to monitor the plane evaporation of the organic films and introduced in SID2007, P53.[4] The Alq3 organic film is deposited on various metal surface such as Cu, Ti, Invar, STS to sublimate. The TPS signal confirms that the Alq3 film consists of nano scale film phase and bulk phase on all the metal plates. The sublimation temperature of the Alq3 film was much lower (130 ) than the vapor temperature (265 ) of the Alq3 powder. P2-98 Influence of Parasitic Capacitance on the Measurement of CCFL & EEFLs G. Kim, M. Kang, M. Lee, D. Jin (Kwangwoon Univ., Korea), H. Jeong, J. Kim (Korea Inst. of Lighting Technology, Korea), J. Kim, J. Koo, B. Hong, J. Kang, E. Choi, and G. Cho (Kwangwoon Univ., Korea) The measurement technology of the electrical and optical properties of CCFL and EEFL for LCD-BLU is investigated. The lamp current and voltage are affected by the leakage of parasitic capacitance. The methods using the luminance meter and the integrating sphere are compared to determine the lamp efficiency. P2-99 Characteristics of Pentacene Transistor using Organic Flow Deposition (OFD) Equipment K.-T. Jung, Y.-U. An, J.-Y. Ji, J.-Y. Choi, Y.-J. Lee (ADPEng, Korea), S.- H. Han, and J. Jang (Kyung Hee Univ., Korea) This paper is concerned on design of organic flow deposition system and development of the deposition process for pentacene thin film by OFD and on electrical characteristics of pentacene films deposited by it. OFD will overcome vacuum thermal evaporator s limits and it will provide a large-scale mass, uniform and good electrical performance. P2-100 Angle of View Polarization Characterization of LCDs P. Boher, T. Bignon, and T. Leroux (ELDIM, France) In the present paper we show that this type of display can be favorably characterized in terms of polarization. EZContrast instrument is used to measure the polarization degree, the ellipticity and polarization light direction. This measurement is made versus incidence angle between 0 and 88 and for all the azimuths. P2-101 A New Method for Measuring Azimuthal Anchoring Energy of Rubbed and UV-Exposed Polyimide Alignment Layers H. J. Park, W. K. Lee, D. G. Kim, D. C. Shin, J. W. Woo, and H. H. Shin (LG.Philips LCD Co., Ltd., Korea) Novel optical measurement systems and improved cell configurations for measuring of azimuthal anchoring energies were developed. The difference between the mechanical rubbing direction and the optical easy axis that caused errors in the previous azimuthal anchoring energy measurement was compensated. P2-102 Effect of Annealing Temperature on the Electrical Characteristics of P-doped ZnO Thin Films J. K. Kim (Univ. of Science and Technology, Korea), J. W. Lim, H. T. Kim, S. H. Kim, and S. J. Yun (ETRI, Korea) In order to realize effective p-type doping in ZnO thin films, ZnO films were deposited on P-doped Si by RF-magnetron sputter deposition technique and annealed at various temperatures.the result indicated that ZnO film annealed at 700 showed p-type conduction with a high carrier concentration in the order of cm -3. P2-103 Dispersion of Single-Walled Carbon Nanotubes for Display Applications S. Manivannan, J. H. Ryu, I. O. Jeong, C. S. Lee, K. S. Kim, J. Jang, K. C. Park (Kyung Hee Univ., Korea) Dispersion of arc-discharged single-walled carbon nanotubes (SWNTs) has been accomplished by a water soluble polymer wrapping functionalization at room temperature. The treated SWNTs were redispersed in both aqueous and many organic solvents and the solutions were found to be stable. P2-104 Effect of ZnS Buffer Layer on Inorganic EL Device D. G. Kim, L. S. Park, T. I. Kum, S. M. Lee, S. H. Sohn, and S. K. Jung (Kyungpook Nat l Univ., Korea) Significant process in the performance and commercialization of full- color thin- 126 IMID 2007 August 27-31,

67 film electroluminescent(el) displays has been achieved. This is due to the remarkable progress made in the performance of exiting EL phosphors, development of new phosphor materials, and design of new EL phosphor structures. In this paper, we fabricated thin-film EL devices with ZnS buffer and BaTiO3 electric layer with on top and bottom of phosphor layer. The effect of ZnS and BaTiO3 layer on the luminance of EL device were studied. P2-105 Growth of Carbon Nanotubes on Metal Substrate for Electronic Devices J. H. Ryu, K. S. Kim, C. S. Lee, K. W. Min, N. Y. Song, I. O. Jeung, S. Manivannan, J. H. Moon, K. C. Park, and J. Jang (Kyung Hee Univ., Korea) We developed a novel growth method of CNTs on metal substrate for device applications, deposited by a triode direct current plasma enhanced chemical vapor deposition (dc-pecvd). With resist-assisted patterning (RAP) method, we had grown CNTs on metal substrate, which were strongly bonded with metal substrate. P2-106 Effect of Dipole Electric Field on Low-voltage Pentacene Thin Film Transistors K. D. Kim (KIMM, Korea) and C. K. Song (Dong-A Univ., Korea) We report on low-voltage pentacene TFTs with a Al2O3/OTS as a gate dielectric. Improving device characteristics, we performed chemical modification of self-grown Al2O3 surface with an octadecyltrichlorosilane(ots) selfassembled monolayer(sam). As the result of this combination, the mobility was improved from 0.3 to 0.45 cm2/vs. P2-107 [Late News] Cost Competitive Pixel Structures for Mobile PVA LCDs S.-A. Cho, J. Lyu, J. Sohn, J. Park, S. B. Park, S. Yang, M.-H. Jung, J.- h. Kim, and S. S. Kim (Samsung Electronics Co., Ltd, Korea) We have designed cost competitive pixel structures for high performance mobile PVA LCDs. These new structures significantly bring down the price by the use of a conventional polarizer for lowest possible cost. A 4.3 prototype based on these techniques was built, achieving the world s highest mobile display contrast ratio of 1200:1, while maintaining wide viewing angle with no loss of transmittance. P2-108 [Late News] New Driving Method of High Brightness LED Backlight using Active Current Source S. Hwang, J. Lee, S. Lim, and M. H. Oh (Dankook Univ., Korea) The brightness of LED changes according to the current flowing through LEDs. The current mirror was used to drive LEDs effectively. The reference current of the current mirror was usually controlled by the resistor but the size of this resistor is very large and this resistor consumes too much power for high power LED backlight driving. The refer-ence current of the current mirror LED driver was controlled by using flyback converter at small size with low power consumption in this paper. P2-109 Nano Phosphors for PDP RGB and Their PL Characteristics C. J. Yang, S. D. Choi, E. B. Park, J. I. Park, and Y. J. Lee (RIST, Korea) We demonstrate fluorescent green organic light-emitting diodes employing a rhenium oxide (ReO3)-doped N,N -diphenyl-n,n -bis(1,1 - biphenyl)-4,4 diamine (NPB) hole transporting layer (HTL). The devices exhibit significantly reduced driving voltages as well as prolonged lifetime. Details of ReO3 doping effects are described in terms of charge transfer complex and stabilization of HTL morphology. P2-110 [Late News] Low Driving Voltage and High Stability Organic Light-emitting Diodes with Rhenium Oxide-doped Hole Transporting Layer D.-S. Leem, H.-D. Park (Seoul Nat l Univ., Korea), J.-W. Kang (KIMM, Korea), S.-H. Lee, and J.-J. Kim (Seoul Nat l Univ., Korea) We demonstrate fluorescent green organic light-emitting diodes employing a rhenium oxide (ReO3)-doped N,N -diphenyl-n,n -bis(1,1 - biphenyl)-4,4 diamine (NPB) hole transporting layer (HTL). The devices exhibit significantly reduced driving voltages as well as prolonged lifetime. Details of ReO3 doping effects are described in terms of charge transfer complex and stabilization of HTL morphology. P2-111 [Late News] Low Roll-off of Efficiency with Increasing Current Density in Phosphorescent OLEDs J.-W. Kang, S.-H. Lee, H.-D. Park, W.-I. Jeong, K.-M. Yoo, Y.-S. Park, and J.-J. Kim (Seoul Nat l Univ., Korea) We demonstrate that the reduction of quantum efficiency with increasing current density in phosphorescent light emitting diodes (PhOLEDs) is related to the formation of excitons in hole transporting layer based on the analysis of emission spectra and exciton formation zone. By employing dual emitting layerm we could achieve maintaining quantum efficiency at high current density up to cd/m 2 as 13.1% compared to the devices with single emitting layer (S-EML) ( next= 6.9 % at cd/m 2 ). P2-112 [Late News] Enhancing Lifetime of White OLED Device by Minimizing Operating Voltage Increase S. Lee, J. Choi, J. Ha, S. Lee, S. Kim, J. Choi, S. Lee, H. Kim, C. Chu, and S. Shin (Samsung Electronics Co., Ltd., Korea) We fabricate green device having unique life time characteristics of operating voltage reduction with time, Vop <0. A green device needs lower voltage than initial voltage for sustaining constant current as life time goes on. It means there are two possible reasons; one is interface modification between anode and HIL due to oxygen plasma treatment and the other is bulk property modification due to combination of new green host and new green dopant. 128 IMID 2007 August 27-31,

68 P2-113 [Late News] A Study on the Evaluation Method of Perceptual Contrast with CIECAM02 J. Chong, S. Lee, S. Lee, Y. Choi, J. Bae, H. Kim, and H. Chung (Samsung SDI Co., Ltd., Korea) We present that perceptual contrast is evaluated by using the CIECAM02. Due to low luminance at black of AMOLED, the contrast between black and white is 277 times larger than that of LCD, which exceeds human s perceptions. Perceptual contrast of AMOLED is about 4 times larger than that of LCD. P2-114 [Late News] Co-Deposition of Rubrene Doped Alq3 film using Belt Source Evaporation Techniques for Large Size AMOLED C. H. Hwang (OLEDON Co., Ltd., Korea), S.-H. Ju (Daejin Univ., Korea), and M. H. Park (Ajou Univ., Korea) The belt source evaporation is for the large size AMOLED devices to resublimate the organic film deposited on the metal plate. Using the plane source, the PL spectrum of the doped organic film has been studied for the first time. The PL peak of the pure Alq3 film was 512nm and that of the pure Rubrene was 557nm. The PL peak of the 2% Rubrene doped Alq3 film was shifted to 536±2nm. August 30 (Thursday) Room Various TFT Technologies Chair B. S. Bae (Hoseo Univ., Korea) Co-Chair H. C. Kang (LG.Philips LCD Co., Ltd., Korea) :20-16:45 [Invited] Recent Advances in TAOS-TFT H. Hosono (Tokyo Inst. of Technology, Japan), K. Nomura (Japan Science and Technology Agency, Japan), and T. Kamiya (Tokyo Inst. of Technology, Japan) A transparent amorphous oxide semiconductor (TAOS)[1,2] exhibits large electron-mobility (>10cm2V-1) comparable to that in the crystalline phase and no p/n-sign anomaly in Hall voltage :45-17:10 [Invited] Advanced Amorphous Silicon TFT Backplane for AMOLED Display M. -K. Han and H. -S. Shin (Seoul Nat l Univ., Korea) Hydrogenated amorphous silicon (a-si:h) thin film transistor (TFT) has considered to an attractive candidate for active matrix organic light emission diode (AMOLED) display backplane because of its good uniformity and established fabrication process. However, the threshold voltage of driving a-si:h TFT is shifted severely by electrical bias due to a charge trapping and defect state creation. In this paper, the degradation phenomenon of a-si:h TFT and the pixel scheme for suppression of threshold voltage shift of a-si:h TFT have been reported and described :10-17:30 Thickness-dependent Morphology of ZnO Films and Amorphous ZnO Transparent TFT H.-H. Hsieh and C.-C. Wu (Nat l Taiwan Univ., Taiwan) Thickness dependent morphology of ZnO films was studied, and ZnO can be intentionally grown into amorphous phase by reducing the thickness. The topgate amorphous ZnO TTFTs with rather high field- effect mobilities and on/off current ratios were effectively fabricated :30-17:50 Organic Integrated Circuits based on Pentacene TFTs Y.-X. Xu, S.-B. Kong, and C.-K. Song (Dong-A Univ., Korea) The integrated circuits were fabricated on PEN substrate by using pentacene TFTs. The OTFTs produced the average mobility of 0.26 cm 2 /V.sec and on/off current ratio of All circuits worked successfully like the simulation results. Especially, the rectifier was able to operate up to 1 MHz input signals. 130 IMID 2007 August 27-31,

69 August 30 (Thursday) Room PDP Image Quality August 30 (Thursday) Room OLED Device II Chair Y. Murakami (NHK, Japan) Co-Chair B. -J. Shin (Sejong Univ., Korea) Chair S. Murano (Novaled, Germany) Co-Chair C. Lee (Seoul Nat l Univ., Korea) :20-16:45 [Invited] Excellent Moving Picture Resolution of PDP, Proved by the New Measurement System Developed by the APDC I. Kawahara (Panasonic AVC, Japan) Excellent moving picture performance of plasma TV has been confirmed by the method proposed by the APDC (Advanced PDP Development Center Corporation). Full-HD Plasma TV showed more than 900 TV-lines of resolution, while typical LCD showed only 300 TV-lines, Even the latest 120Hz LCD showed 600 TV-lines :45-17:10 [Invited] Prohibition of Boundary Image Sticking in AC Plasma Display Panel using Vacuum Sealing Method H.-S. Tae, C.-S. Park (Kyungpook Nat l Univ., Korea), Y.-K. Kwon, E. G. Heo, and B.-H. Lee (Samsung SDI Co., Ltd., Korea) This paper shows that the boundary image sticking can be prohibited completely by using the vacuum sealing process, which means that the residual impurities such as nitrogen or oxygen can be a critical factor inducing the boundary image sticking. The production of boundary image sticking was checked in the test panel fabricated by the N2 or O2 flow during the vacuum sealing process :10-17:30 Local Image Enhancement using Adaptive Unsharp Masking and Noise Filter T.-O. Ha, B.-S. Song, and S.-H. Moon (LG Electronics Inc., Korea) We describe the image enhancement method of applying two spatial filters with different characteristics adaptively. An adaptive method is introduced so that sharpness enhancement is performed only in regions where the image exhibits significant dynamics, while noise reduction is achieved in smooth regions. Simulation results show that the proposed method improved the image quality :20-16:45 [Invited] Barix Thin Film Encapsulation of OLED s on Flexible and Rigid Glass Substrates; High Temperature Performance and Manufacturing Aspects. X. Chu, L. Moro, N. Rutherford, and R. J. Visser (Vitex Systems, USA) We will discuss encapsulation of OLEDs on both flexible and rigid glass substrates. Accelerated testing at 6CC/90RH and 85C/85RH is compared and acceleration factors for OLED and Calcium test samples are discussed.we have tested the stability and performance of our barrier coating to much higher temperatures: up to 140 C. Water Vapor Transmission rates at temperatures from 60 to 140 C are presented :45-17:05 Lifetime Improvement of Organic Light Emitting Diode by using LiF Thin Film and UV Glue Encapsulation H.-E. Hsieh, B.-R. Huang (Nat l Yunlin Univ. of Science & Technology, Taiwan), F.-S. Juang, Y.-S. Tsai (Nat l Formosa Univ., Taiwan), M.-H. Chang, M. O. Liu, and J.-y. Su (ITRI, Taiwan) Before the UV glue encapsulation, the research evaporated LiF thin film on device to be an extra packaging layer for improving the OLED lifetime. The formula of UV glue was specially developed. We found 100 nm LiF and special UV glue is 2.4 times longer than those by commercial UV glue :05-17:25 Work Function Engineering on Transparent Conducting ZnO Thin Films G.-S. Heo, S.-J. Hong, J.-W. Park, B.-H. Choi, J.-H. Lee (KITECH, Korea), and D.-C. Shin (Chosun Univ., Korea) A possibility of work function engineering on ZnO thin film is studied by insitu and ex-situ doping process. The work function of ZnO thin film decreases with increasing boron and phosphorus doping quantity. But, the work function of Al-doped ZnO (AZO) thin film increases as the boron doping quantity incresess. 132 IMID 2007 August 27-31,

70 August 30 (Thursday) Room Fabrication Process for Flexible Display II Chair N. Colaneri (Arizona State Univ., USA) Co-Chair C. -K. Song (Dong-A Univ., Korea) August 30 (Thursday) Room D Display & System II Chair S. -W. Min (ICU, Korea) Co-Chair D. Kim (Samsung Electronics Co., Ltd., Korea) :20-16:45 [Invited] A Study on Manufacturing Methods for Flexible Microelectronics T. Sakai, A. J. J. van der Horst, A. J. Hovestad, J. G. L. Otten, and H. C. M. van Doremalen (Philips Applied Technologies, The Netherlands) Various manufacturing methods are analyzed by using manufacturing metrics to validate which method would be applicable to flexible micro-electronics. Among others, Roll-to-Roll method is revealed to inherently have an excessive WIP resulting in long cycle time and limited diversity as well as low equipment efficiency :45-17:05 Development of High Performance Indium Tin Oxide Films at Room Temperature by Plasma-Damage Free Neutral Beam Sputtering System J.-N. Jang (Korea Univ., Korea), K. S. Oh, S. J. Yoo, D. Kim, B. Lee (Nat l Fusion Research Center, Korea), I.-H. Yang, J. Moon (Korea Univ., Korea), J. S. Kim (SEM Technology, Korea), S. W. Choi, Y. C. Park (Handong Global Univ., Korea), and M. P. Hong (Korea Univ., Korea) New ITO film of good performance has been developed by brand-new, plasmadamage-free-sputtering process at room temperature. The room temperatureprocessed ITO films with optimized conditions as neutral beam acceleration bias of -30V and In&Sn composition ratio of 99:01 gives lower resistivity as Ω-cm and higher transmittance over 90% a wavelength of 550nm :05-17:25 Ink Jets as Display Manufacturing Tools M. W. Schoeppler (FUJIFILM Dimatix, Inc., USA) Major display equipment suppliers have introduced equipment using ink jets for manufacturing steps such as printing the polyimide alignment layer and printing color filters. This paper will discuss the status of ink jets as precision deposition tools and the new technology being introduced for ink jet manufacturing :25-17:45 Manufacturing of Barix Coated Plastic Barrier Films: R2R vs. Batch S. Kapoor, X. Chu, L. Moro, N. Rutherford, M. Rosenblum, T. Ramos, and R. J. Visser (Vitex Systems, USA) We will discuss and compare the different ways to manufacture high performance Barix coated barrier films as a substrate for displays: R2R vs Batch. It will be shown that the barrier performance of the Barix coating on plastic can be as good as on glass substrates :20-16:45 [Invited] Development of Mobile-type Full Parallax 3D Display using High-Density Directional Images M. Tsuboi (NTT DoCoMo Inc., Japan), Y. Takaki (Tokyo Univ. of Agriculture & Technology, Japan), and T. Horikoshi (NTT DoCoMo Inc., Japan) We introduce a mobile-type 3D display that achieves a full directional motion parallax and the real time interactions between the observer and the 3D image at the same time. These effects can be unique specified to the mobile-type 3D display :45-17:10 [Invited] Analysis on the Viewing Characteristics of Integral Floating Display S.-W. Min (Virginia Tech, USA), J. Kim, and B. Lee (Seoul Nat l Univ., Korea) Integral floating is three-dimensional display technique which is a combination of integral imaging and floating display. In this paper, we explain and analyze the relation between the special viewing characteristics and the system factors of integral floating system. The experimental results which prove the analysis will be presented :10-17:30 A Future Remote Controller for 3D TV M.-C. Park (KIST, Korea) and K.-J. Cheoi (Chungbuk Nat l Univ., Korea) An intelligent remote controller for 3-D TV interface exploits an artificial system of human visual attention for an easy interaction :30-17:50 Eyestrain-free Bi-Focal 3D Projection Display System J.-W. Seo and T. Kim (Hongik Univ., Korea) A 3D projection display using stacked screens to display the near and far images, respectively, is developed. The front screen is made of a scattering polarizer film, and the far image on the rear screen is clearly visible through it. The image is perceived as three- dimensional, and no eyestrain is suffered. 134 IMID 2007 August 27-31,

71 August 30 (Thursday) Room Novel Displays II August 31 (Friday) Room TFTs for Flexible Displays Chair K. -K. Paek (Daejin Univ., Korea) Chair M. Hong (Korea Univ., Korea) :20-16:45 [Invited] Evaluation of Thin-Film Photodevices and Development of Artificial Retina M. Kimura, T. Shima, T. Yamashita, Y. Nishizaki (Ryukoku Univ., Japan), and H. Hara (Seiko Epson Corp., Japan) First, thin-film photodevices are evaluated, and a p/i/n thin-film phototransistor (TFPT) is recommended because the photo-induced current is relatively high and independent of the applied voltage. Next, an artificial retina is developed using the p/i/n TFPTs, and it is found that it can detect photo illuminance profile with sensitivity control :45-17:10 [Invited] Compact See-though Near to Eye Display with Diffractive Optical Elements T. Levola (Nokia Research Center, Finland) The Near to Eye Display (NED) solves the problem of having a display larger than a small portable device. The virtual image of the NED is created using a microdisplay and imaging optics. It is important that the optics does not interfere with the human visual system and that the device is light, compact and easy to wear :10-17:30 Digital Holography - Principles and Challenges of Holographic Projection Systems A. Schwerdtner, J-C Olaya, R. Haussler, and N. Leister (Seereal Technologies GmbH, Germany) In the field of 3D displays, holographic displays are the only technology allowing optimal user comfort. We have developed systems based on compact projection optics, that allow advantageous new features, like large size fullcolor3d scenes generated at high rate on a micro-display with state of the art resolution :30-17:50 Bi-Stable and Wide Temperature-Range Electrowetting Displays K. Blankenbach, A. Schmoll (Univ. of Pforzheim, Germany), A. Bitman, F. Bartels (Bartels Mikrotechnik, Germany), and D. Jerosch (ADT, Germany) Moving a droplet by electrowetting is the basis of our novel displays. This enables mechanical bi-stable and high reflective monochrome as well as color systems. Since no high temperature process is required, plastic substrates can be used. Our prototypes show promising performance like wide temperature range, contrast ratio and color :00-09:25 [Invited] Technical Obstacles to Suftla Flexible Microelectronics M. Miyasaka (Seiko Epson Corp., Japan) Three technical obstacles must be overcome to build a fruitful business in the nascent industry of flexible microelectronics: the self-heating effect of thin film transistors (TFTs), the thermal and mechanical durability of flexible devices, and the cost issue :25-09:50 [Invited] TFT Technology for Flexible Display Applications C.-D. Kim, I. B. Kang, and I.-J. Chung (LG.Philips LCD Co., Ltd., Korea) The key development issues in the flexible displays are TFT backplane technology for their various applications, which requires competitive device performance as well as its low temperature process. In this paper, with shortly reviewing recent flexible display development status, we describe technical trends of low-temperature a-si TFTs. Our TFTs show good device characteristics enough to apply LCD and electrophoretic display :50-10:10 Effect of Surface-Modified Poly (4-vinyl Phenol) Gate Dielectric on Printed Thin Film Transistor C.-F. Sung, H.-M. Tsai, Y.-Z. Lee, and K. Cheng (ITRI, Taiwan) Surface modification of the gate dielectric has a strong influence on the performance of printed transistors. The surface modification occurs between the gate dielectric and semiconductor. The printed transistor with evaporated vanadium pentoxide (V2O5) modification exhibits a mobility of 0.2cm 2 V -1 s -1 and a subthreshold slope of 1.47 V/decade :10-10:30 Auto-patterned Ag Signal Line by Solution-processed Printing on Zone-defined Surface. J. Kim, B. Lee, T. Moon, M. Park, G. Chae, I. Kang, and I.-j. Chung (LG.Philips LCD Co., Ltd., Korea) Ultra-fine Ag line was automatically patterned to the extent of 10 micro meter in width by slit coating on the 10 4 mm 2 glass, which was pre-patterned as hydrophobic and hydrophilic zone by using hydrophobic material. The resistivity of Ag film was about 4µΩ cm. 136 IMID 2007 August 27-31,

72 August 31 (Friday) Room AMOLED Backlane Technologies August 31 (Friday) Room D Display & System III Chair B. Turk (Coherent, USA) Co-Chair Y. Hong (Seoul Nat l Univ., Korea) Chair T. Honda (Chiva Univ., Japan) Co-Chair Y. -M. Kwon (KIST, Korea) :00-09:25 [Invited] LTPS Technology for Improving the Performance of AMOLEDs H.-S. Choi, J.-S. Choi, S.-K. Hong, B.-K. Kim, and Y.-M. Ha (LG.Philips LCD Co., Ltd., Korea) The increase of repetition rate, the dithering of laser optics, and the extension of pulse duration time are major approaches in improving the picture quality of AMOLEDs fabricated by excimer laser crystallization (ELC). Advanced solid phase crystallization (ASPC) has been developed to improve the uniformity and the process cost :25-10:50 [Invited] Novel AM-OLED with Light Extraction Enhancement N. Ibaraki (Toshiba Matsushita Display Technology Co.,Ltd., Japan) We investigated the effect on light extraction in OLED by introducing aluminum micro bump light scattering reflector. By attaching the micro bump reflector to a both side emission OLED, we found that the light extraction was 1.7 times larger than a simple flat reflector :50-10:10 Flexible OTFT-OLED Display Panel using Ag-paste for Source and Drain Electrodes G.-S. Ryu, Y.-B. Kim, H.-J. Song, and C.-K. Song (Dong-A Univ., Korea) We fabricated OTFT-OLED display panel by using Ag-paste for source and drains electrode of OTFTs. The OTFTs were fabricated by solution processes such as spin-coating for PVP gate dielectric and screen printing for S/D electrodes with Ag-paste, except pentacene active layer which was deposited by evaporation. The mobility was cm2/v.sec, off state current ~10-11A, threshold voltage 7.6 V and on/off current ratio ~105. The panel consisted of 16 x 16 pixels and each pixel consisted of 2 OTFTs, 1 Capacitor and 1 OLED. The pixels successfully worked in terms of current magnitude supplied to OLED and the control ability of driving and switching OTFTs :10-10:30 Reduced Swing Polarity Inversion Driving Method for a-si:h TFT Based AMOLED W. Lee, H.-S. Park, S.-H. Kuk, D.-W. Kang, and M.-K. Han (Seoul Nat l Univ., Korea) We have proposed a new driving method which improve the current stability of a-si:h TFTs for AMOLED. It performs the negative bias annealing on driving TFTs during a certain period of a frame time. In the proposed method, the range of data signals is significantly reduced by modulating VSS :00-09:25 [Invited] Development of 3D Display System for Videoguide Operation T. Honda, K. Suzuki, Y. Kuboshima, and T. Shiina (Chiba Univ., Japan) In the constructed auto-stereoscopic display system for one observer. 1.stereoscopic images displayed on a special LCD are made on a large concave mirror. 2.The view-zone limiting aperture is set between the projection lens and the concave mirror :25-09:50 [Invited] Autostereoscopic Time Multiplexed 2D/3D Display D.-S. Kim, S. Shestak, K.-H. Cha, J.-P. Koo, and S.-D. Hwang (Samsung Electronics Co., Ltd., Korea) We have developed a 2D/3D time sequential LCD autostereoscopic display, which is capable of simultaneous displaying 2D and 3D graphics at a frame rate up to 120 Hz. Left and right sets of viewing zones are formed by a combination of a fast LC shutter and a lenticular lens array :50-10:10 ATTEST to MUTED - Problems, Answers, and the Evolution of a Multiple Mobile Viewer Autostereoscopic Display I. Sexton (De Montfort Univ., UK) and E. Buckley (Light Blue Optics, UK) The evolution of a multi viewer autostereoscopic display is described. Development of the display was originally a part of the EC funded ATTEST project and continues as another EC project MUTED. The design of the original display is presented and the limitations of the prototype are described. The current iteration of the design is presented :10-10:30 Analysis on the Optimized Depth of 3D Displays without an Accommodation Error H. Choi, J. Kim (Seoul Nat l Univ., Korea), J. B. Park (Samsung Electronics Co., Ltd., Korea), and B. Lee (Seoul Nat l Univ., Korea) Accommodation error is one of the main factors that degrade the comfort while watching stereoscopic 3D images. We analyze the limit of the expressible 3D depth without an accommodation error using the human factor information and wave optical calculation under Fresnel approximation. 138 IMID 2007 August 27-31,

73 August 31 (Friday) Room 409 Workshop 1 : Printable & Flexible Displays Printing Technologies and Printable Devices Chair J. S. Choi (Hongik Univ., Korea) Co-Chair M. Hack (Universal Display Corp., USA) W1-1 10:30 Diverging Ink Jet Technologies and Applications M. W. Schoeppler (Dimatix, FUJIFILM, USA) Major display equipment suppliers have introduced equipment using ink jets for manufacturing steps such as printing the polyimide alignment layer and printing color filters. This presentation shows the status of ink jets as precision deposition tools and the new technology being introduced for ink jet manufacturing. W1-2 11:20 Hybride Printing Technologies for Low Costed TFT-LCD Applications M. P. Hong (Korea Univ., Korea) Key candidacies of challenging to the next generation FPD market as the post LCD- TV will be reviewed, and critical issues for the digital printing technologies applying to TFT array fabrication as one of core components for larger sized & low cost LCD manufacturing will be discussed, which including technical development trends, practical hurdles, and new-hybrid approaches in order to overcome the current obstacles. Lunch Break 12:10-14:00 W1-3 14:00 Roll-to-Roll (R2R) Fabrication of Electronics on Flexible Substrate Using Self-Aligned Imprint Lithography (SAIL) O. Kwon, M. Almanza, A. Chaiken, W. Jackson, A. Jeans, H. -J. Kim, H. Luo, P. Mei, C. Perlov, C. Taussig (Hewlett-Packard Company, USA) SAIL solves the challenge of patterning and aligning submicron features on meterscale substrates by encoding the geometry for all of the patterning steps into discrete heights of a 3-dimensional masking structure. Details and of SAIL technology as a part of roll-to-roll processes for flexible electronics fabrication will be presented, along with recent results. W1-4 14:50 UV & Thermal Nanoimprint Lithography and It s Applications J. J. Lee (KIMM, Korea) Nanoimprint lithography (NIL), such as thermal and/or UV nanoimprint, has been well known as one of the next generation lithography alternatives. Especially, the nanoimprint lithography technology has the advantages in terms of process simplicity, low cost, high replication fidelity, and relatively high throughput. To achieve nano-imprinting process, nano-imprinting lithography equipment must have required some multi-functional units which are imprinting head, selfalignment wafer stage, overlay and alignment system for multi-layer process, master with sub-50nm half-pitch patterns, and anti-vibration unit, etc. In this talk, the key issues and some possible applications for nanoimprinting lithography tools will be proposed. Coffee Break 15:40-16:00 Display Mode for All Organic Displays Chair C. K. Song (Dong-A Univ., Korea) Co-Chair O. Kwon (HP, USA) W1-5 16:00 Current Status of All Organic Display H. D. Park (IDRC, Korea) Due to ultra thin and light, low cost, and design free, flexible display based on organic thin film transistor (OTFT) is a future vision of next-generation display. This presentation is about all organic display and the vision to put a flexible display in our program. W1-6 16:50 Flexible OLED Display Technologies M. Hack (Universal Display Corp., USA) In this workshop we will review the characteristics of OLEDs that make them an ideal display medium to enable flexible, high information content, full color displays. We will outline the key steps in the fabrication of AMOLED displays, including both backplane and OLED related processes. Finally we will present preliminary flexibility data. Coffee Break 17:40-17: IMID 2007 August 27-31,

74 August 31 (Friday) Room 315 Workshop 2 : Full-HD PDP Technical Issues W1-7 17:50 E-Paper for Flexible Display K. -S. Suh (ETRI, Korea) Recently, due to its aptness in ubiquitous computing era, in which access to information is vital, flexible display technology has gained considerable attention. Flexible display is frequently dubbed as rollable display, and has properties of strong resistance against mechanical failure, lightness and compactness. Thanks to these properties flexible displays gives wide latitude in realizing the panel format, allowing access to information in various situations. In addition, portability equips flexible display as a next generation technology for media. W1-8 18:40 Cholesterics A Different Twist on Flexible Displays J. West (Kent State Univ., USA) In this presentation I review the operating principals of bistable cholesteric materials and why they are particularly well suited for flexible displays. I report on the most recent results of researchers from Kent Displays and in particular the development of ink jet printed full color and single substrate flexible displays. Printing Technologies and Printable Devices AM Chair K. -Y. Choi (LG Electronics Inc., Korea) W2-1 09:00 Improvement of Luminous Efficacy with Full HD AC PDP K. -W. Whang (Seoul Nat l Univ., Korea) We have investigated the discharge mechanism of AC PDP with cell resolution and Xe content variation through the 3-dimensional plasma simulation. Also, we proposed some effective ways of realizing high luminous efficacy in Full HD cell, which are the increase of the sustain electrode gap, the application of SDE type with 4:3 aspect ratio, and the optimization of the barrier rib height. W2-2 10:00 Ultrahigh-resolution PDP for Resolution PDP for Super Hi Super Hi-Vision Broadcasting System Y. Murakami (NHK Science & Technical Research Labs, Japan) The 0.3-mm-pixel-pitch ultrahigh-resolution PDP is being developed for use in the Super Hi-Vision broadcasting system with over 4,000 scanning lines. The discharge mechanism of the microcell by discharge simulation and plasma diagnostic technique was clarified. These techniques and the development of the panel are describes. W2-3 11:00 A High Resolution Process for Plasma Display Panel Barrier Rib Production P. McGuire (3M Company, USA) The 3M Precision Replication Process has been shown to offer unique advantages for the production of high resolution PDP Barrier Ribs. Recent developments have extended the platform s compatibility with emerging requirements for multi-panel FHD PDP production. 3M s Multi-panel production processes, laminator designs and multi-panel production materials performance will be discussed. Lunch Break 12:00-14: IMID 2007 August 27-31,

75 August 31 (Friday) Room 306 Workshop 3 : Breakthrough Technology for Successful AMOLED Business PM Chair Y. Murakami (NHK, Japan) Co-Chair P. McGuire (3M Company, USA) W2-4 14:00 Technologies for Full HD PDP K. Y. Choi (LG Electronics Inc., Korea) The market of flat panel display has been expanded and the demands for high resolution products are also increased. In this presentation, the technical issues for developing full HD PDP and key technologies to solve the issues are reviewed. High efficacy technology including cell structure, discharge gas, material properties and single scan technology for full HD would be discussed. W2-5 15:00 PDP s Technical Issues Beyond Full-HD Y. S. Han (Samsung SDI Co., Ltd., Korea) In this presentation, I would like to discuss issues occurring in manufacturing of post-fhd panel. First, I will consider limits of fabrication of patterned layers like barrier rib, ITO transparent electrode, Ag electrodes and alignment. And then, main factors to affect panel efficiency will be addressed. In this case, discharge gas composition and cell design will be discussed. W2-6 16:00 User s Fatigue Difference between LCD and PDP M. Whang (Sangmyung Univ., Korea) This study is to determine the difference of user s fatigue between PDP and LCD. Fatigue was measured by self-report, and physiological response such as PPG (photoplethysmogram), GSR (Galvanic skin response), skin temperature, accommodation rate of eye and blink rate. Video was prepared for displaying and its contents included one standard scene and four scenes from combining dynamic, static, night and daylight scene. Each scene had 10 minute running time. Printing Technologies and Printable Devices AM Chair H. D. Kim (Samsung SDI Co., Ltd., Korea) Co-Chair Y. Park (Kyung Hee Univ., Korea) W3-1 10:40 Technology Review on TFT and Backplane for AMOLED Applications Y. Hong (Seoul Nat l Univ., Korea) Silicon-based (polycrystalline, microcrystalline, amorphous), organic-based, and oxide-based TFT technology for AMOLED backplane applications will be reviewed. Since the same technology can be used for flexible AMOLED applications, technology status and technical issues of the flexible AMOLED backplanes including substrate materials and process temperature of TFTs will also be addressed. W3-2 11:30 White OLED Technology for High-Performance AMOLED Displays T. K. Hatwar (Eastman Kodak Company, USA) Excellent progress has been made in the singlet-based white OLEDs. This presentation will review the progress in white technology useful for the four-subpixel RGBW display format. We will also discuss newly developed tandem architectures for improving efficiency, lifetime, and color gamut, which meet the requirements for next generation AMOLED displays. Lunch Break 12:20-14:00 PM 1 Chair Seong Taek Lee (Samsung SDI Co., Ltd., Korea) W3-3 14:00 OLED Innovations to Drive AMOLED Display Performance J. Brown (Universal Display Corp., USA) Phosphorescent OLEDs are a core technology driver for OLED display and lighting products due to the inherent efficiency advantages. Here we present recent results in our continued advancements of PHOLED power efficiency and operational stability with focus on narrowing emission line-width, reducing voltage, and overall design for maximizing device lifetime. 144 IMID 2007 August 27-31,

76 7th International Meeting on Information Display IMID 2007 Committee W3-4 14:50 Current Technologies & New Values of AMOED H. -D. Kim (Samsung SDI Co., Ltd., Korea) AMOLEDs have been known as one of the most promising future displays because of their outstanding inherent properties. However, to be a major display in the market, it should be more improved in terms of scalability and high resolution capability. This presentation will cover the technologies development status to solve the issues and introduce unique values of AMOLEDs. Coffee Break 15:40-16:00 PM 2 Chair J. -H. Yang (LG Electronics Inc., Korea) Co-Chair B. D. Choi (Hanyang Unvi., Korea) W3-5 16:00 Technologies for Large-sized AMOLEDs B. -W. Lee (Samsung Electronics Co., Ltd., Korea) Technologies for mobile displays and that for large, fixed displays are vastly different. In this workshop, the difference in the demands from these two markets will be discussed, and how the technologies have evolved to the current state in response will be discussed as well. Important design issues will be presented. W3-6 16:50 Passive Driving Method for Low Power and Active Driving Method for Low Cost of OLED R. Hattori (Kyushu Univ., Japan) The feasibility and concrete driving technique of multi-line addressing (MLA) in PMOLED will be discussed as a low-power and long -lifetime driving method, and the Mura compensation method using a calibration memory will be introduced as a new driving method to achieve a large-sized and long-lifetime AMOLED for TV use. Organizing Committee Conference Chair Ki-Woong Whang, Seoul Nat l Univ., Korea Executive Committee Chair Oh-Kyong Kwon, Hanyang Univ., Korea Secretary Hyun Jae Kim, Yonsei Univ., Korea Local Arrangement Chair Shin Won Kang, Kyungpook Nat l Univ., Korea Technical Program Committee Chair Yong-Seog Kim, Hongik Univ., Korea Secretary Jae Hoon Kim, Hanyang Univ., Korea Cheol-Hee Moon, Hoseo Univ., Korea Program Sub-Committee Active-Matrix Devices Chair Jong Sun Choi, Hongik Univ., Korea Co-Chair Michael Hack, Universal Display Corp., USA Secretary Woo Jae Lee, Samsung Electronics, Korea Committee Members Guglielmo Fortunato, IFN-CNR Rome, Italy Yong Ho Jang, LG.Philips LCD, Korea Hyun Jae Kim, Yonsei Univ., Korea Mutsumi Kimura, Ryukoku Univ., Japan Fang-Chen Luo, AU Optronics Corp., Taiwan P. Migliorato, Cambridge Univ., UK Hoe-Sup Soh, LG.Philips LCD, Korea Yung-Hui Yeh, ITRI, Taiwan Liquid Crystal Technologies and Other Non- Emissive Displays Chair Sin-Doo Lee, Seoul Nat luniv., Korea Co-Chair Yuri Reznikow, Inst. of Physics, Ukraine Secretary Gi-Dong Lee, Dong-A Univ., Korea 146 IMID 2007 August 27-31,

77 Committee Members Liang-Chy Chien, Kent State Univ., USA Daeseung Kang, Soongsil Univ., Korea Jae Hoon Kim, Hanyang Univ., Korea Shin-Tson Wu, Univ. of Central Florida, USA Plasma Display Panels Chair Heung-Sik Tae, Kyungpook Nat l Univ., Korea Co-Chair J. Gary Eden, Univ. of Illinois, USA Secretary DongCheol Jeong, Hoseo Univ., Korea Committee Members Kyung Cheol Choi, KAIST, Korea Kwang Yeol Choi, LG Electronics Co. Ltd., Korea Mark J. Kushner, Iowa State Univ., USA Shigeo Mikoshiba, The Univ. of Electro-Communications, Japan Cheol-Hee Moon, Hoseo Univ., Korea Gerrit Oversluizen, Phillips Research Labs., The Netherlands Larry Weber, Society for Information Display, USA Organic Light-Emitting Diode (OLED) Displays Chair Lee-Mi Do, ETRI, Korea Co-Chair Ching Tang, Univ. of Rochester, USA Secretary Chang-Hee Lee, Seoul Nat l Univ., Korea Committee Members Julie Brown, Universal Display Corporation, USA Jermy Burroughes, CDT, UK Chin H., Fred Chen, Nat l Chiao Tung Univ., Taiwan Antoine Kahn, Princeton Univ., USA Woo Young Kim, Hoseo Univ., Korea Jang Hyuk Kwon, Kyung Hee Univ., Korea Yongsup Park, Kyung Hee Univ., Korea Yong Qiu, Tsinghua Univ., China Flexible Displays / Plastic Electronics (*Special Session Coorganized by KIDS and USDC) Chair Jae Hoon Kim, Hanyang Univ., Korea Co-Chair M. Robert Pinnel, USDC, USA Secretary DaeGyu Moon, Soonchunhyang Univ., Korea Committee Members Soon-Ki Kwon, Kyungsang Univ., Korea MunPyo Hong, Korea Univ., Korea Ghassan E. Jabbour, Arizona State Univ., USA F. S. Juang, Nat l Formosa Univ., Taiwan Jacob Kou-Chen Liu, Chang Gung Univ., Taiwan Yeon-Gon Mo, Samsung SDI, Korea Chung Kun Song, Dong-A Univ., Korea Field Emission Displays Chair Hyeong Rag Lee, Kyungpook Nat l Univ., Korea Co-Chair Yahachi Saito, Nagoya Univ., Japan Secretary Ji-Beom Yoo, Sungkyunkwan Univ., Korea Committee Members Young-Rae Cho, Pusan Nat l Univ., Korea Byeong-Kwon Ju, Korea Univ., Korea Masayuki Nakamoto, Shizuoka Univ., Japan Yoon-Ho Song, ETRI, Korea Ultra Slim CRTs Chair Byeong-Yong Lee, HNT, Korea Co-Chair Friedhelm Oestrich, Engineering Consult, Germany Secretary Hyun Chul Ji, Samsung SDI, Korea Committee Members Hee Jong Han, Kumoh Nat l Inst. of Tech., Korea Sung Hwan Kim, Hankuk Electric Glass Co., Ltd., Korea Chung Moon Lee, Mirdisplay, Korea Taegeun Lee, LG Philips Displays, Korea Sang Yeon Moon, DYMC, Korea Projection Displays Chair Jun Ho Lee, Kongju Nat l Univ., Korea Committee Members Jong-Tae Kim, Pukyong Nat l Univ., Korea Seung-Gyu Lee, LG Electronics Co., Ltd., Korea Chang Sik Yoo, Hanyang Univ., Korea Display Electronics, Systems and Applications Chair Ju Young Jeong, The Univ. of Suwon, Korea Co-Chair Reiji Hattori, Kyushu Univ., Japan Secretary Byongdeok Choi, Hanyang Univ., Korea Committee Members Hideki Asada, NEC LCD Technologies, Ltd., Japan Choon Woo Kim, Inha Univ., Korea Matsumi Kiumra, Ryukoku Univ., Japan Stephen Lai, Solomon Systech, USA Seung-Woo Lee, Kyung Hee Univ., Korea Dong-Gey Liu, Feng Chia Univ., Taiwan Chang Sik Yoo, Hanyang Univ., Korea Applied Vision / Human Factors / 3D Displays Chair Sungkyu Kim, KIST, Korea 148 IMID 2007 August 27-31,

78 Co-Chair Byung Ho Choi, KETI, Korea Secretary Dae-Sik Kim, Samsung Electronics, Korea Committee Members Toshio Honda, Chiva Univ., Japan Namho Hur, ETRI, Korea Takashi Kawai, Waseda Univ., Japan Nam Kim, Chungbuk Nat l Univ., Korea Byoungho Lee, Seoul Nat l Univ., Korea Tae-Soo Park, LG Electronics Co., Ltd., Korea Yasuhiro Takaki, Tokyo Agri. Univ., Japan Adrian Travis, Cambridge Univ., UK Display Materials and Components Chair Dong Hoon Choi, Korea Univ., Korea Co-Chair Yi-Jen Chan, Industrial Tech. and Research Inst., Taiwan Secretary Young Chul Kim, Kyung Hee Univ., Korea Committee Members Jeong-In Han, KETI, Korea Jae Kyung Kim, KIST, Korea Kazuhiro Kudo, Chiba Univ., Japan Yutaka Majima, Tokyo Tech., Japan Jae Sang Ro, Hongik Univ., Korea Someya Takao, Univ. of Tokyo, Japan Display Manufacturing & Measuring Equipment Chair Jeong Og Choi, Doosan Mecatec, Korea Co-Chair Koichi Wani, ifire Tech., Canada Secretary Seong Eui Lee, Korea Polytechnic Univ., Korea Committee Members Matthias Fahland, Fraunhofer FEP, Germany Sang Jik Kwon, Kyungwon Univ., Korea Ho Nyeon Lee, Soonchunhyang Univ., Korea James(Jueng-Gil) Lee, CDT, UK Arto Maaninen, VTT, Finland Novel and Future Displays Chair Byeong-Kwon Ju, Korea Univ., Korea Secretary Kyu Chang Park, Kyung Hee Univ., Korea Committee Members Kyeong-Kap Paek, Daejin Univ., Korea Woo-Sang Park, Inha Univ., Korea Jun-Bo Yoon, KAIST, Korea Sun Jin Yun, ETRI, Korea 7th International Meeting on Information Display IMID 2007 Exhibitors A-01 Doosan Mecatec C-21 I&A Technology A-02 YELIMGMS C-22 Merck Advanced Technologies A-03 Kolon Industries, Inc C-23 Hanyang Technology A-04 CHISSO KOREA C-23 Air Products A-05 E-TECH C-24 SNU Precision B-01 JUNG WON C-25 Systems Technology B-02 FOCUS CORPORATION C-26 K-MAC B-03 SUNGJIN HITECH D-01 NANOSYSTEM B-04 Sanayi System D-02 SAES Getters Korea B-05 BRUSH BANK D-03 Young Poong CMC B-06 NIKON INSTRUMENTS D-04 National Instruments KOREA (NIK) D-05 MASTER B-07 JSR D-06 Hanyang ENG B-08 SFA D-07 McScience B-09 SAMSUNG SDI D-08 NOVALED AG C-01 UNIJET D-09 DR. SCHENK SALES AND C-02 ADVANCED NANO SERVICE CENTER KOREA PRODUCTS D-10 DAE WHA TECH C-03 TOYO D-11 EASTWEST HI-TECH C-04 MODISTECH D-12 DONGWOO FINE-CHEM C-05 MIKRO M.I TECH D-13 ADP Engineering C-06 KORTherm D-14 Zygo Korea C-07 Pfeiffer Vacuum Korea D-15 LG.Philips LCD C-08 HYBUS D-15 LG Electronics C-09 VNC-TECH D-15 LG.Philips Displays C-10 GORYO ENG E-01 Semiconductor & Display C-11 HI-LAND KOREA E-02 SAVE-IT MAX C-12 SEMISYSCO E-03 DKSH KOREA C-13 SHONICS E-04 Cosmos System C-14 SURFACETECH E-05 TOPCON KOREA C-14 INOTOUCH E-06 SP TECHNOLOGY TECHNOLOGY E-07 New Gen Tech C-16 J&C TECH E-08 Hi Metal Trading C-17 Silvaco Korea F-01 DIT C-18 LMS F-02 Korea Polytechnic Sungnam C-19 SE-AN TRADING College C-20 SMC F-03 HIROX KOREA 150 IMID 2007 August 27-31,

79 F-04 EEXPO Electronic Engineering F-05 DAEYOUNG F-06 NIKKEI BUSINESS PUBLICATIONS F-07 Mallinckrodt Baker Inc. F-08 SUNIC F-09 TORY ENGINEERING/TEK KOREA G-01 NEXTEK G-02 TASCO G-03 MACRONSYSTEM G-04 ULVAC KOREA G-05 EO Technics G-06 CMS TECHNOLOGY G-07 PHICOM G-08 TAEHWA ELECTRON G-09 KOYO THERMO SYSTEMS KOREA G-10 KORNIC SYSTEM G-11 ADSTECH G-12 LeCroy Korea G-13 DE&T G-14 SHINDO ENG G-15 FINE DNC G-16 MIRAENANOTECH G-17 TECHSAN SYSTEM G-18 UNIVIC G-19 ALTI-ELECTRONICS G-20 TOP ENGINEERING G-21 CANON SEMICONTOR ENGINEERING KOREA H-01 SEONETECH H-02 Micro Motion Technology H-03 SAEHAN H-04 KEA H-05 NCB Networks H-06 New Groth Engine Display Center H-07 KEYENCE KOREA H-08 DAEJOO ELECTRONIC MATERIALS H-09 MoDoo Tech H-10 DSEIL SYSTEM H-11 Dukin H-12 S-EO H-13 CHARMNCI H-14 K.C.Tech H-15 INZIDISPLAY H-16 SMV H-17 OSUNG LST H-18 SODIFF Advanced Materials H-19 TOKYO ELECTRON H-20 NITTO DENKO H-21 Seoul Semiconductor H-22 DONGJIN SEMICHEM H-23 PKL H-24 Samsung Corning Precision Glass I-01 API I-02 Sepoong Ind. I-03 econy I-04 Daou Xilicon Technology I-05 JIWONTECH I-06 PSI Trading I-07 EVERTECHNO I-08 SAMSUNG Electro- Mechanics I-09 SHINSUNG ENG I-10 OPTES I-11 SEMES I-12 Otsuka Electronics Korea I-13 Samsung Electronics J-01 Monthly Display J-02 ATECH SYSTEM J-03 MECC KOREA J-04 TOPTEC J-05 ENC Technology J-06 Advanced Display Manufacturing Research Center (ADMRC) J-07 NPS 21 J-08 Chungnam Display Center J-09 OFT J-10 TAESUNG ENG J-11 ATS ENGINEERING 3F Room 313 (Secretariat) Room 314 (Tutoriial 4, FPD Forum) 4F Room 409 (Business Forum, Workshop 1) 7th International Meeting on Information Display Room 307 (VIP Room) Room 315 (Tutoriial 2, Workshop 2) 5F Room 506 (Preview Room) Convention Hall II (Opening Ceremony, Plenary Session, Poster Session) Floor Plan Exhibition Hall III Exhibition & Convention Hall I Exhibition Hall IV Exhibition & Convention Hall II Room 306 (Tutoriial 3, Workshop 3) Lobby Room 505 (Tutoriial 1) Room 504 (Author Interview Room) Lobby 152 IMID 2007 August 27-31,

80 7th International Meeting on Information Display IMID 2007 Invited Speakers 1-1 Excimer Laser-induced Crystallization of Si Films for Manufacturing LTPS TFT-based Displays Ui Jin Chung, Columbia Univ., USA 1-2 SLS (Sequential Lateral Solidification) Technology for High End Mobile Applications Myung-Koo Kang, Samsung Electronics Co., Ltd., Korea 2-1 Understanding the Physics of Plasma Display Addressing Vladimir (P) Nagorny, Mattson Technology, USA 3-1 Large-Sized AMOLED for TV Application Changwoong Chu, Samsung Electronics Co., Ltd., Korea 4-1 Flexible Display Roadmap and the Market Outlook Barry Young, DisplaySearch, USA 4-2 Analysis of Low Power Consumption AMOLED Displays on Flexible Stainless Steel Substrates Mike Hack, Universal Display Corp., USA 4-3 Development of Flexible 3.5 QCIF (176 X144 pixels) OTFT Driven OLED : Integration Technologies Compatible with Normal Semiconductor Processes Seung-Youl Kang, ETRI, Korea 5-1 Flexible Liquid Crystal Film using Continuous Process Yan-Rung Lin, Electronics and Optoelectronics Research Labs., Taiwan 5-2 Films for Widening the Viewing Angle of LCDs Hiroyuki Mori, FUJIFILM Co., Japan 6-1 Challenges for Large Area Processing Equipment for TFT-LCD Manufacturing Tak Tanaka, AKT, an Applied Materials Company, USA 6-2 Atmospheric Metal Doping System and Application for Poly-Si Backplane Dong Hoon Shin, Viatron Technologies Inc., Korea 7-1 Advanced Optical Configuration for Transmissive and Reflective Mode in the In-Plane Switching LC Cell Gi-Dong Lee, Dong-A Univ., Korea 7-2 Chiral Liquid Crystals in Photonic Device Applications Helen Gleeson, Univ. of Manchester, UK 8-1 High Efficacy and High Speed Addressing of a Spatial Positive Column Discharge PDP Tomokazu Shiga, The Univ. of Electro-Communications, Japan 9-1 Novel Backplane for AM-OLED Device Myeon-Chang Sung, LG Electronics Inc., Korea 9-2 Ambipoalr Light-emitting Organic Field-effect Transistor using a Wideband-gap Blue-emitting Molecule Tomo Sakanoue, Kyushu Univ., Japan 10-1 Fabrication of An Organic Thin-Film Transistor Array by Wettability Patterning for Liquid Crystal Displays Sin-Doo Lee, Seoul Nat l Univ., Korea 11-1 Interfacial Engineering of Polymer Light Emitting Diode Show-An Chen, Nat l Tsing Hua Univ., Taiwan 11-2 Vertical Type Organic Transistors and Flexible Display Applications Kazuhiro Kudo, Chiba Univ., Japan 11-3 Cruciform Thiophene-based Molecules as Organic Semiconductors for Field Effect Transistor Applications Dong Hoon Choi, Korea Univ., Korea 12-1 Transparent Conductive Oxides for Displays Applications Bernd Szyszka, Inst. for Surface Engineering and Thin Films, Germany 12-4 From Printing Graphics to Printing Electronics, The Digital Revolution in Display Manufacturing Eran Elizur, Kodak Graphic Communications Group, Canada 13-1 Synthesis and Mesomorphic Properties of Banana-Shaped Mesogens with All-Ester Linking Group E-Joon Choi, Kumoh Nat l Inst. of Technology, Korea 13-3 FLEXMatters Alliance for Production of Flexible Displays John West, Kent State Univ., USA 14-1 Analysis of Materials for Protective Layers in AC PDPs. Yury Matulevich, Samsung SDI Co.,Ltd, Korea 14-2 Effects of Aging Treatment of doped-mgo Layer on Discharge Characteristics of ac-pdp Yong-Seog Kim, Hongik Univ., Korea 15-1 Advances in White OLED Tandem Architecture for Next Generation AMOLED Displays Tukaram Hatwar, Eastman Kodak Company, USA 15-2 Recent Advances In Small Molecule OLED Microdisplays Amal Ghosh, emagin Corp., USA 15-3 Highly Efficient, Long Living White PIN-OLEDs for AM Displays Sven Murano, Novaled AG, Germany 16-1 Direct Fabrication of a-si:h TFT Arrays on Flexible Substrates: Principal Manufacturing Challenges and Solutions N. Colaneri, Arizona State Univ., USA 16-2 Large Size Plastic Display for Outdoor Application Nam-Seok Roh, Samsung Electronics Co., Ltd., Korea 17-1 OTFT Materials Containing Fused Aromatics Soon Ki Kwon, Kyungsang Nat l Univ., Korea 17-2 Simultaneous Measurements of Drain-to-Source Current and Carrier Injection Properties of Organic Thin-Film Transistors Yutaka Majima, Tokyo Inst. of Technology, Japan 19-1 Surface Modification Method for Controlling Liquid Crystal Alignment Hak-Rin Kim, Kyungpook Nat l Univ., Korea 19-2 Carbon-Nanotube Doping in Liquid Crystals of Display Interest Wei Lee, Chung Yuan Christian Univ., Taiwan 19-3 Lyotropic Chromonic Liquid Crystals: Effects of Additives and Optical Applications Oleg D. Lavrentovich, Kent State Univ., USA 20-1 Recent Advances with the 3M PDP High Resolution Rib Replication Process J.C. Cha, 3M Company, USA 21-1 Scaleable, Cost Effective Display Manufacturing Technology Based on White OLED James Buntaine, Eastman Kodak Company, USA 22-1 Advances in Microencapsulated Electrophoretic Displays Michael McCreary, E Ink, USA 22-2 Active-matrix Flexible Display on Plastic Substrate Fabricated by Glass Line Cheng-Chung Lee, ITRI, Taiwan 23-1 Intelligent Backlighting System for LCD TV Sungkyoo Lim, Dankook Univ., Korea / J. P. Sanchez, CEYXO Tech., USA 23-2 Influence of Glass Tube Dielectrics on the New Generation of External Electrode Fluorescent Lamps Guangsup Cho, Kwangwoon Univ., Korea 24-1 Through Flow Technology - Enabling Highly Reliable Inkjet Manufacturing of Flat Panel Displays John Attard, Xaar Plc, UK 25-1 Advanced-MVA(A-MVA) Mode for High Quality LC Displays Yi-Pai Huang, Nat l Chiao Tung Univ.,, Taiwan 26-1 Technology Trend and Requirement of Mobile Displays using Low- Temperature Poly-Si (LTPS) Technologies Oh-Kyong Kwon, Hanyang Univ., Korea 27-1 Full-Color Phosphorescent OLEDs: Maximizing Performance Today for Small-Area Portable Products and Tomorrow for TVs Julie Brown, Universal Display Corp., USA 27-2 Development of P-OLED Materials for Displays and Lighting Scott Brown, SUMATION, UK 28-1 Flexible Ultra-high Gas Barrier Substrate for Organic Electronics Michihiro Ezawa, GE Plastics, Japan 154 IMID 2007 August 27-31,

81 28-2 Commercializing Flexible Substrates for Displays and Lighting Mark Auch, IMRE, Singapore 29-1 Joule-Heating Induced Crystallization (JIC) of Amorphous Silicon Films Jae-Sang Ro, Hongik Univ., Korea 30-1 Field Emission Display with Design Elements for Control of Uniformity, Color Purity, Luminance, and Invisible Spacers Emmett M. Howard, Motorola Inc., USA 30-3 Fabrication and Driving of Active-Matrix Field Emission Display Yoon-Ho Song, ETRI, Korea 31-1 Tandem Reflective LCD and OLED Jiun-Haw Lee, Nat l Taiwan Univ., Taiwan 31-2 Polarizer-free Liquid Crystal Devices Yi-Hsin Lin, Nat l Chiao Tung Univ., Taiwan 31-3 Single-Layer Color Cholesteric Liquid Crystal Displays Liang-Chy Chien, Kent State Univ., USA 31-4 Materials Aspects for Fast Switchable NLC/FLC Devices Wolfgang Haase, Darmstadt Univ. of Technology, Germany 32-1 Design Issues of Digital Display Interface Deog-Kyoon Jeong, Seoul Nat l Univ., Korea 33-1 High Performance OLEDs with a New Device Structure Sehwan Son, LG Chem, Korea 34-1 Temporal Factors of Human Depth Perception Satoshi Shioiri, Tohoku Univ., Japan 34-2 The Effects of Three Dimensional Stimulus Configuration on Self-Motion Perception Induced by Large Visual Display Shinji Nakamura, Nihon Fukushi Univ., Japan 35-1 Field Emission Display and Backlight for LCD using Printed Carbon Nanotubes Yong Churl Kim, SAIT, Korea 35-2 Low Work Function and Sharp Field Emitter Arrays by Transfer Mold Fabrication Method Masayuki Nakamoto, Shizuoka Univ., Japan 35-3 Recycle of CRT Glass Cullet Sung Ho Chang, Kumoh Nat l Inst. of Technology, Korea 36-1 Thin-Beam Excimer Laser Annealing David S. Knowles, TCZ, USA 36-2 Electrical Instabilities in P-channel Polysilicon TFTs: Role of Hot Carrier and Self-heating Effects Guglielmo Fortunato, IFN-CNR, Italy 37-1 Circuit Design Technologies for System on Panel Yong Sung Park, Samsung SDI Co.,Ltd, Korea 37-4 Novel LCD Structures with OLED Backlight Integration for Mobile Display Applications Munisamy Anandan, Organic Lighting Technologies LLC, USA 38-1 Optoelectronic OLED Modeling for Device Optimization and Analysis Beat Ruhstaller, Zurich Univ. of Applied Sciences, Switzerland 39-1 Fabrication of 70nm-Sized Metal Patterns on Flexible PET Film using Nanoimprint Lithography Heon Lee, Korea Univ., Korea 39-2 Ink Jet Printing of Functional Materials Mark James, Merck Chemicals Ltd., UK 40-1 Development of Technology to Prevent Influence of Images upon Viewers Toshiya Morita, NHK Science and Technical Research Labs., Japan 41-1 A Light Pipe Based Recycling Scheme for LED Brightness Enhancement Kenneth Li, Wavien Inc., USA 42-1 Threshold Voltage Control of a-si TFT by Delta Doping of Phosphorous Hoe-Sup Soh, Hoseo Univ., Korea 42-2 A-Si TFT based Systems on TFT-LCD Panels Wen Chun Wang, Wintek Corp., Taiwan 43-1 High Speed Driving Technique in AC PDPs Bhum Jae Shin, Sejong Univ., Korea 44-1 Cathode Interface Engineering for Stable and Efficient Organic Lightemitting Diodes Yong Qiu, Tsinghua Univ., China 44-2 Charge Confinement and Interfacial Engineering of Electrophosphorescent OLED Byung Doo Chin, KIST, Korea 45-1 OTFT Technologies for Flexible Displays Chung-Kun Song, Dong-A Univ., Korea 45-2 Study on operation stability of printed organic TFTs Toshihide Kamata, AIST, Japan 46-1 Novel User Interaction Technologies in 3D Display Systems Klaus Hopf, Fraunhofer Inst. for Telecommunications HHI, Germany D Video Processing for 3DTV Kwanghoon Sohn, Yonsei Univ., Korea D Interaction Technique on Stereo Display System Yong-Moo Kwon, KIST, Korea 47-1 Nanotechnologies in Displays : TFTs with Carbon Nanotubes and Semiconductor Nanowires. D. Pribat, Ecole Polytechnique, France 47-2 Challenge to Future Displays: Transparent AM-OLED Driven by PEALD Grown ZnO TFT Sang-Hee Park, ETRI, Korea 48-1 Recent Advances in TAOS-TFT Hideo Hosono, Tokyo Inst. of Technology, Japan 48-2 Advanced Amorphous Silicon TFT Backplane for AMOLED Display Min-Koo Han, Seoul Nat l Univ., Korea 49-1 Excellent Moving Picture Resolution of PDP, Proved by the New Measurement System Developed by the APDC Isao Kawahara, Panasonic AVC Networks Company, Japan 49-2 Prohibition of Boundary Image Sticking in AC Plasma Display Panel using Vacuum Sealing Method Choon-Sang Park, Kyungpook Nat l Univ., Korea 50-1 Barix Thin Film Encapsulation of OLED s on Flexible and Rigid Glass substrates; High Temperature Performance and Manufacturing Aspects. Robert Visser, Vitex Systems, USA 51-1 A Study on Manufacturing Methods for Flexible Microelectronics Toru Sakai, Philips Applied Technologies, The Netherlands 52-1 Development of Mobile-type Full Parallax 3D Display using High-Density Directional Images Masashi Tsuboi, NTT DoCoMo, Inc., Japan 52-2 Analysis on the Viewing Characteristics of Integral Floating Display Sung-Wook Min, Virginia Tech, USA 53-1 Evaluation of Thin-Film Photodevices and Development of Artificial Retina Mutsumi Kimura, Ryukoku Univ., Japan 53-2 Compact See-though Near to Eye Display with Diffractive Optical Elements Tapani Levola, Nokia Research Center, Finland 54-1 Technical Obstacles to Suftla Flexible Microelectronics Mitsutoshi Miyasaka, Seiko Epson Corp., Japan 54-2 TFT Technology for Flexible Display Applications Chang Dong Kim, LG.Philips LCD Co., Ltd., Korea 55-1 LTPS Technology for Improving the Performance of AMOLEDs Yong-Min Ha, LG.Philips LCD Co., Ltd., Korea 55-2 Novel AM-OLED with Light Extraction Enhancement Nobuki Ibaraki, Toshiba Matsushita Display Technology Co.,Ltd., Japan 56-1 Development of 3D Display System for Video-guide Operation Toshio Honda, Chiva Univ., Japan 56-2 Autostereoscopic Time Multiplexed 2D/3D Display Dae-Sik Kim, Samsung Electronics Co., Ltd., Korea 156 IMID 2007 August 27-31,

82 7th International Meeting on Information Display SPONSORED BY Daegu Metropolitan City Gyeongsangbuk-do Ministry of Science and Technology (MoST) Ministry of Commerce, Industry and Energy (MOCIE) Ministry of Information and Communication (MIC) Institute for Information Technology Advancement (IITA) Korea Research Foundation (KRF) Korea Display Industry Association (KDIA) The Electronic Times Korea Tourism Organization (KTO) Merck Advanced Technologies Ltd. DONGWOO FINE-CHEM GYEONGSANGBUK-DO Ministry of Science & Technology IMID 2007 Secretariat The Korean Information Display Society (KIDS) TEL: , 7992 FAX: