Opnext Lights It Up. Dedicated Support. Opnext Quality. Technology. Research and Development

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1 Optodevices

2 Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet the needs of a diverse range of markets, from telecom and datacom to medical, information and industry applications, to defense and security. Established in 2000, Opnext was created from the resources of the Fiber Optic Components Business Unit at Hitachi. We have continued to build on three decades of advanced Hitachi technology, establishing our own broad portfolio of solutions. Technology Opnext technologies represent the leading edge of product development in the marketplace today. Opnext serves the diverse and expanding markets where lasers and infrared emitting diodes are used such as medical and dental, displays, logistics, security and defense including ITAR regulated programs, industrial robotics, and construction tools. Our solutions are backed by a strong and dedicated R&D program and the confidence that comes with proven experience and application success. Research and Development Opnext technology leads the industry and is well regarded in our many markets because we anticipate and meet our customer s needs for best-quality components and innovative applications at economical prices. We continue to expand our existing product line and develop new breakthrough products with the full support of Hitachi s R&D efforts, including the Central Research Laboratory (CRL), Mechanical Engineering Research Laboratory (MERL), and Production Engineering Research Laboratory (PERL). Dedicated Support Opnext provides comprehensive applications engineering support worldwide. Our long history in innovating visible and infrared lasers and LEDs gives you access to engineers with some of the greatest depth and understanding in the industry. Our engineers work hand-in-hand with customers to tailor our solutions to your requirements.. Our operations team and global network of distributors ensure consistent delivery and smooth integration into your supply chain. Our focus on service extends from the first meeting through each delivery and post-sales support. Opnext Quality The Hitachi name has always been associated with the highest quality lasers available in the industry. With Opnext, the commitment to quality remains as strong as ever. This quality is rooted in our tremendous laser design and manufacturing expertise which has another benefit highly competitive prices. We design for high volume manufacturing so that our laser innovations achieve both high quality and low cost. Combined with superior support, Opnext is your best choice for long term laser supplier and partner. Let Opnext bring new light to your applications. Visit or contact us by calling Optodevices - Page 2

3 Featured Products The HL6354MG is a low operating current 5mW red laser diode. Its low power consumption allows for longer battery life while the low aspect ratio enables higher optical output power. 80mW output power is available in the HL6366/67/78DG - the highest available power in the market. This 640nm laser allows for higher resolution and throughput rates. Our new HL8337MG* & HL8340MG* - 830nm & 850nm 50mW lasers have the lowest driving current in the market for infrared applications. The Opnext Advantage Opnext s 30 years of laser leadership is evident through our products, technology, service and support. Technology Multi-beam lasers for higher speed applications High efficiency design for longer battery life Leader at 640nm Continuous innovation Products Wavelength selection available Circular beam High temperature tolerance for greater design flexibility Service and Support Renown quality Dedicated application support Fast response times Consistent, reliable delivery How to Buy Opnext has distributors and sales offices world-wide. Use the list below to contact the nearest distributor or please see the back cover for the nearest Opnext sales office. North America Avnet Electronics United States Marketing Jaco United States Photonic Products United States Europe / Middle East Dätwyler Electronics Switzerland +41 (0) Dornext Electronex, Ltd. Israel MSC Locations throughout Europe +49 (0) Optomark Germany & UK Photonic Products UK & Germany +44 (0) Sascoholz Locations throughout Europe +49 (0) Silverstar Italy * Under Development Optodevices - Page 3

4 Red and Infrared Laser Diodes Wavelength Optical Power Part Number 635nm 3mW AC Connection HL6314MG HL6316G CC Connection HL6324MG Other Connection 5mW HL6312G, HL6326G, HL6328MG, HL6335G, HL6340MG, HL6356MG HL6313G, HL6325G, HL6327MG, HL6336G, HL6341MG, HL6357MG 7mW HL6354MG HL6355MG 10mW HL6320G, HL6332G, HL6334MG, HL6344G, HL6348MG HL6319G, HL6331G, HL6333MG, HL6343G, HL6347MG 639nm 12mW HL6358MG HL6359MG 15mW HL6322G HL6321G 25mW HL6360MG HL6361MG 35mW HL6323MG 640nm 45mW HL6362MG HL6363MG 642nm 65mW HL6364DG HL6365DG HL6376DG (BC) 90mW HL6366DG HL6367DG HL6378DG (BC) AC Connection: LD: Anode Common PD: Cathode Common BC Connection: LD: Cathode Common PD: Cathode Common Optodevices - Page 4 CC Connection: LD: Cathode Common PD: Cathode Common FC-Connection: LD electrode is isolated from stem (common) PD: cathode is frange connection FN Connection: LD electrode is isolated from stem (common) PD: none LN Connection: LD: Cathode common PD: none

5 Wavelength Optical Power Part Number AC Connection CC Conection Other Connection nm 12mW HL6554MG 70mW HL6555G 100mW HL6548FG (FC) 130mW HL6553FG (FC) 50mW (pulse) HL6501MG 70mW (pulse) HL6512MG (LN) HL6513FM (FN) 140mW (pulse) HL6525MG (LN) HL6526FM (FN) 300mW (pulse) HL6545MG (LN) HL6546SU (LN) nm 5mW HL6724MG 5mW x 2 HL6740FG 10mW HL6714G 35mW HL6738MG 55mW HL6750MG 785nm 50mW HL7851G HL7852G 830nm 40mW HL8333G HL8334MG HL8325G 850nm 40mW HL8335MG AC Connection: LD: Anode Common PD: Cathode Common BC Connection: LD: Cathode Common PD: Cathode Common CC Connection: LD: Cathode Common PD: Cathode Common FC-Connection: LD electrode is isolated from stem (common) PD: cathode is frange connection FN Connection: LD electrode is isolated from stem (common) PD: none LN Connection: LD: Cathode common PD: none Optodevices - Page 5

6 Part Numer Optodevices - Page 6 Internal Circuit Po (mw) Maximum Ratings Optical and Electrical Characteristics (Typical) Topr (ºC) Po (mw) HL6312G AC 5-10 to HL6313G CC 5-10 to HL6314MG AC 3-10 to HL6316G AC 3-10 to HL6319G CC to HL6320G AC to HL6321G CC to HL6322G AC to HL6323MG AC to HL6324MG CC 3-10 to HL6325G CC 5-10 to HL6326G AC 5-10 to HL6327MG CC 5-10 to HL6328MG AC 5-10 to HL6331G CC to HL6332G AC to HL6333MG CC to HL6334MG AC to HL6335G AC 5-10 to HL6336G CC 5-10 to HL6340MG AC 5-10 to HL6341MG CC 5-10 to HL6343G CC to HL6344G AC to HL6347MG CC to HL6348MG AC to HL6354MG AC 7-10 to HL6355MG CC 7-10 to HL6356MG AC 5-10 to HL6357MG CC 5-10 to HL6358MG AC to HL6359MG CC to HL6360MG AC to HL6361MG CC to HL6362MG AC to HL6363MG CC to HL6364DG AC to HL6365DG CC to HL6376DG BC to HL6366DG AC to HL6367DG CC to HL6378DG BC to HL6501MG CC to HL6512MG LN to HL6513FM FN to HL6525MG LN to HL6526FM FN to HL6545MG LN to HL6546SU LN to HL6548FG FC to HL6553FG FC to HL6554MG AC to HL6555G AC to HL6714G AC to HL6724MG AC 5-10 to HL6738MG CC to HL6740FG CC 5-10 to HL6750MG CC to HL7851G AC to HL7852G CC to HL8325G CC to HL8333G AC to HL8334MG AC ro HL8335MG AC to AC Connection: LD: Anode Common PD: Cathode Common BC Connection: LD: Cathode Common PD: Cathode Common Ith (ma) Iop (ma) CC Connection: LD: Cathode Common PD: Cathode Common FC-Connection: LD electrode is isolated from stem (common) PD: cathode is frange connection Is (ma) p (nm) // (deg.) (deg.) FN Connection: LD electrode is isolated from stem (common) PD: none LN Connection: LD: Cathode common PD: none

7 Part Number by Application Main Applications Pointer / Aiming Line / Pattern Generator Distance Meter Medical (Bio, Analysis) Barcode Scanner / Laser Printing Display Optical Storage Infrared Automotive Defense & Security Experimental Uses Maximum Rating Optical Power Po (mw) Wavelength P(nm) 9mm Package (G/FG-type) 5.6mm Package (MG/DG/SU/FM-type) 3 HL6316G HL6314MG series HL6312G series 635 HL6325G series HL6327MG series HL6335G series HL6340MG series 5 HL6356MG series 670 HL6724MG 675 HL6740FG** 7 HL6354MG series HL6319G series 635 HL6331G series HL6333MG series 10 HL6343G series HL6347MG series 670 HL6714G 639 HL6358MG series HL6554MG HL6321G series 25 HL6360MG series 639 HL6323MG HL6738MG HL8325G HL8334MG HL8333G 850 HL8335MG HL6362MG series HL7851G series 50* 658 HL6501MG HL6750MG HL6364DG series HL6555G HL6512MG 70* 658 HL6513FM HL6366DG series HL6548FG HL6553FG HL6525MG 140* 658 HL6526FM HL6545MG 300* 660 HL6546SU *pulse optical power and pulse operation **exceptional cathode common Optodevices - Page 7

8 Infrared Light Emitting Diodes Main Applications Wavelength Optical Output Part Number Package General Measurement Applications 770nm 30mW HE7601SG Can Type 820nm 20mW HE8811 Can Type 40mW HE8404SG Can Type 870nm 40mW HE8812SG Can Type Industrial Use 880nm 0.5mW* HE8807FL Can Type with lens for collimated light beam 10mW HE8807SG Can Type *Optical output at N.A. = 0.16 (I F = 20 ma) Infrared Light Emitting Diodes - Major Characteristics Absolute Maximum Ratings Optical and Electrical Characteristics (Typical) Part Numer Forward Current I F (ma) Operating Temperature Topr (ºC) Optical Output Po (mw) Peak Wavelength p (nm) Spectral Width (nm) min typ typ Test Conditions I F (ma) HE7601SG to HE8404SG to HE8807SG to HE8807FL to * HE to HE8812SG to Optodevices - Page 8

9 Communications Laser Diode and Photodiode Product Line-up Structure Wavelength Data Rate Part Number Package Communications Laser Diodes DFB Type 1550nm 2.5 Gbit/s HL1574CP 1310nm 10 Gbit/s HL1359CP HL1360CP* Communications Photodiodes APD Type 1310 / 1550nm 2.5 Gbit/s HR1252CP* 10 Gbit/s HR1262DRC Chip on Carrier HR1262ERC Chip on Carrier PIN Type 1310 / 1550nm 10 Gbit/s HR1166CP* Uncooled DFB Laser Diode Products - Major Characteristics Part Number Data Rate (Gbit/s) Wavelength (nm) Operating Temp (ºC) Output Power (mw) Extinction Ratio (db) SMSR (db) Dispersion (ps/nm) Reach Remarks HL1574CP 2.5 1,530 to 1,565 0 to 85 5 (CW) - > km HL1359CP 10 1,290 to 1,330 0 to 85 5 (CW) - >35-10 km HL1360CP* 10 1,290 to 1,330 0 to 95 5 (CW) - >35-10 km Expected Value Expected Value Expected Value Photodiode Products - Major Characteristics Part Number Data Rate (Gbit/s) Wavelength (nm) Operating Temp (ºC) Responsivity at 1550 nm (A/W) Operation Voltage (v) Dark Current at 0.9 Vb (na) Bandwidth (M=10) (GHz) Active Diameter ( m) Remarks HR1252CP* 2.5 1,310 to 1, to 85 > typ. < 50 > 3 40 HR1166CP* 10 1,310 to 1,550-5 to 100 > typ. < 10 > HR1262DRC 10 1,310 to 1,550-5 to 75 > typ. < 100 > HR1262ERC 10 1,310 to 1,550-5 to 75 > typ. < 100 > APD type PIN type Chip on Carrier APD type Chip on Carrier APD type * Under Development Optodevices - Page 9

10 Laser Diode Modules Data Rate 2.5 Gbit/s Package 14-Pin Butterfly Part Number Reach Availability LB µm ILM 640 km DWDM Available 10 Gbit/s LC Receptical Coax (MSA-TOSA) LD µm DFB 10 km Available LC Receptical Coax (MSA-TOSA) LD µm DFB 10 km Available 7-Pin HF Conn LE µm ILM 80 km WDM Available MSA-TOSA LF µm ILM 80 km Available 40 Gbit/s 7-Pin HF Conn LE7B µm ILM 2 km Available Photodiode Modules PS Gbit/s Mini Butterfly -26 dbm Available APD-TIA MSA-ROSA PD7056* APD-TIA -26 dbm Sampling PD7004 MSA-ROSA -18 dbm Under Development PIN-TIA Part Number Data Rate (Gbit/s) Wavelength (nm) Operating Temperature (ºC) Modulated Output Power (dbm) Extinction Ration (db) Dispersion (ps/nm) Penalty (db) Reach Dimensions Remarks LB LD LD LE LF LE7B ,528 to 1,562 1,290 to 1,330 1,290 to 1,330 1,530 to 1,562 1,530 to 1,565 1,530 to 1, to 75 >-3 >10 12,800 <2 640 km 15.2 x 30 x 8.5 mm EA based ILM 0 to 75-3 typ > km 5.6, L=18 mm -5 to 90-3 typ > km 5.6, L=18 mm DM-DFB XMD-MSA DM-DFB XMD-MSA -5 to 75 >-1 >10 1,600 <2 80 km 14 x 30 x 9.65 mm EA based ILM -5 to 75 >1 >9.5 1,600 <2 80 km 5.6 x 17.1 x 5.6 mm EA based ILM XMD-MSA 0 to 70 >0 >9 40 <2 2 km 14 x 30 x 7.9 mm EA based ILM Part Number Data Rate (Gbit/s) Wavelength (nm) Operating Temperature (ºC) Received Power (dbm) Power Supply (v) Typical Dimensions Remarks PS ,310 to 1,550-5 to to / -5.2 / x 11.3 x 7 mm APD-TIA PD ,310 to 1,550 0 to to ,L=14 mm PD ,310 to 1,550 0 to / ,L=14 mm PIN-TIA XMD-MSA APD-TIA XMD-MSA * Under Development Optodevices - Page 10

11 Notes: VISIBLE AND/OR INVISIBLE LASER RADIATION- AVOID DIRECT EXPOSURE TO BEAM PEAK POWER 300mW WAVELENGTH 620 to 1610 nm CLASS IIIb LASER PRODUCT This product conforms to FDA regulations 21 CFR Chapter 1,Subchapter 3. AVOID EXPOSURE-Visible and/or invisible laser radiation is emitted from glass window, fiber pigtail end, laser chip mounted on top of header or bare chip. Before use, consult appropriate catalogs or manuals Manufactured by: beam direction Opnext Japan, Inc. 190 Kashiwagi, Komoro-shi, Nagano-ken, , Japan. Tel: USER NSTRUCTIONS: These laser devices produce visible and/or invisible laser radiation. Avoid direct exposure to eyes. Avoid looking directly into a laser diode or collimated beam along its optical axis when it is in operation. One simple way to determine the optical path is to use a phosphor plate or infrared sensitive camera. These devices are components to be used in producing complete laser systems.they do not emit radiation unless combined by the end user with other components. Please consult the Opnext Optodevice Databook for some of the possible uses of these devices. Because of the small size of the device, the required labels and these instructions are provided on this label rather than printed on the device. Optodevices - Page 11

12 Headquarters: Sales, Marketing and Global Operations Opnext, Inc. 1 Christopher Way Eatontown, NJ T F Pluggables Business Unit / North America Sales Office 940 Auburn Court Fremont, CA T F Sales Office 104 Treemonte Drive Orange City, FL T F Sales Office Opnext Japan, Inc. Takagi Building 3F Iwamoto-cho 1-3-9, Chiyoda-ku Tokyo , Japan T F Modules Business Unit Opnext Japan, Inc. 216 Totsuka-cho, Totsuka-ku Yokohama , Japan T F Devices Business Unit Opnext Japan, Inc. 190, Kashiwagi, Komoro-shi Nagano-ken, , Japan T F Optodevices Opnext Germany, GmbH European Sales and Operations Dornacher Str 3 D Feldkirchen Bei München, Germany T F Shanghai Representative Office Westgate Tower, Room 2008B 1038 Nanjing Xi Lu Jingan District, Shanghai, PRC T F Opnext is a trademark of Opnext, Inc. Version: OPD