Diodes SEMICONDUCTOR GENERAL CATALOG

Transcription

1 SEMICONDUOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes /9 SCE0004L

2 Rectifiers General-Purpose Rectifiers Average Forward Current (A) Peak Repetitive Reverse Voltage Remarks 0.3 VS-6 TPC6K01 Independent 2-in HM-FLAT HMG01 Independent 2-in-1 CRG S-FLAT CRG01 CRG07 CRG03 S-FLAT CRG04 CRG05 CRG09 1 CMG05 CMG06 M-FLAT CMG07 CMG08 M-FLAT CMG02 CMG03 : The definitions of the absolute maximum junction and storage temperatures are based on AEC-Q101 : High ESD immunity The products shown in bold are also manufactured in offshore fabs. (For Strobe Discharge Circuits) Peak Repetitive Surge Current Peak Repetitive Reverse Current Remarks IFRM (A) VRRM CMC02 M-FLAT CM 500 F The products shown in bold are also manufactured in offshore fabs. Super-Fast-Recovery Diodes Average Forward Current (A) (S-FRDs) Reverse Recovery Time trr (ns) (Max) Peak Repetitive Reverse Voltage CRF S-FLAT M-FLAT CMF04 CMF03 CMF S-FLAT 100 CRF03 1 M-FLAT CMF02 M-FLAT CMF01 : Dry-packed The products shown in bold are also manufactured in offshore fabs. High-Efficiency Diodes (HEDs) Reverse Recovery Time trr (ns) (Max) Peak Repetitive Reverse Voltage S-FLAT CRH02 S-FLAT 35 CRH01 1 CMH04 CMH05A M-FLAT 50 CMH05 35 CMH07 CMH08A 2 50 CMH08 M-FLAT 35 CMH01 CMH02A 3 50 CMH02 CLH01 CLH02 CLH03 L-FLAT 35 5 CLH05 CLH06 CLH07 : Dry-packed The products shown in bold are also manufactured in offshore fabs. Single Average Forward Currents (A) /9 SCE0004L

3 Variable Capacitance Diodes Variable Capacitance Diodes S-MINI (Diodes for Electronic Tuning) VR VR VR Applications SV to to FM car radios, portable radios USC ESC USQ fsc VR VR VR Applications 5 5 1SV324 1SV to to VCXO JDV2S36E* to to VCXO 1SV262 1SV to to CATV tuners 1SV322 1SV to to VCXO 1SV304 1SV305 JDV4P08U to to VHF/UHF VCO 1SV270 1SV to to VHF/UHF VCO 1SV229 1SV279 JDV2S41FS* to to VHF/UHF VCO 1SV310 1SV311 JDV2S09FS to to VHF/UHF VCO 1SV314 JDV2S10FS to to VHF/UHF VCO 1SV277 1SV285 JDV2S07FS to to VHF/UHF VCO 1SV239 1SV to to 10 L Band VCO The products shown in bold are also manufactured in offshore fabs. *: New product /9 SCE0004L

4 Radio-Frequency Switching Diodes Radio-Frequency Switching Diodes Applications IR (Max) VF (Max) (Typ.) rs (Typ.) VR VR IF VR IF f ( A) ( ) (ma) (ma) (MHz) 1SS USC Single 1SS ESC 1SS S-MINI TV band 1SS S-MINI switch 1SS312 Twin USM 1SS USM 1SS SSM JDP2S12CR * S-FLAT 1SV USC 1SV308 Switch, ATT ESC JDP2S01E Single ESC JDP2S02AFS fsc JDP2S02A CST2 Switch JDP2S08SC SC2 JDP3C02AU * (Typ.) USM JDP3C13U * Switch, ATT Twin USM JDP4P02AT TESQ JDP4L08C * CST4C Switch 2 in 1 JDP4P08C * CST4C The products shown in bold are also manufactured in offshore fabs. *: New product /9 SCE0004L

5 Zener Diodes Zener Diodes Power Dissipation P (W) 0.7 S-FLAT M-FLAT M-FLAT Zener Voltage (SMD) (SMD) (SMD) VZ (Typ.) 6.2 CRY CRY CRY CRY CRY91 10 CRZ10 11 CRZ11 12 CRZ12 CMZB12 CMZ12 13 CRZ13 CMZB13 CMZ13 15 CRZ15 CMZB15 CMZ15 16 CRZ16 CMZB16 CMZM16 (Note 1) CMZ16 18 CRZ18 CMZB18 CMZ18 20 CRZ20 CMZB20 CMZ20 22 CRZ22 CMZB22 CMZ22 24 CRZ24 CMZB24 CMZ24 27 CRZ27 CMZB27 CMZ27 30 CRZ30 CMZB30 CMZ30 33 CRZ33 CMZB33 CMZ33 36 CRZ36 CMZB36 CMZ36 39 CRZ39 CMZB39 CMZ39 43 CRZ43 CMZB43 CMZ43 47 CRZ47 CMZB47 CMZ47 51 CMZB51 CMZ51 53 CMZB53 CMZ53 68 CMZB68 * 75 CMZB75 * 82 CMZB82 * 100 CMZB100 * 110 CMZB110 * 150 CMZB150 * 180 CMZB180 * 200 CMZB200 * 220 CMZB220 * 240 CMZB240 * 270 CMZB270 * 300 CMZB300 * 330 CMZB330 * 390 CMZB390 * Note 1: P: 1 W, bi-directional zener diode *: New product The products shown in bold are also manufactured in offshore fabs /9 SCE0004L

6 ESD Protection Diodes Number of Diodes SC2 0.3 (Standard Type) (Unidirectional) CST2 Single Type Vz IR max fsc 5 USC (mm) (mm) (mm) (mm) (ma) ( A) ( ESD Immunity Contact Min TBD TBD TBD 0 DF2S3.6SC ** TBD 1 57 TBD 0 DF2S5.1SC * DF2S5.6SC ** DF2S5.6 DF2S5.6FS TBD TBD 0 30 kv DF2S6.2SC * DF2S6.2 DF2S6.2FS n DF2S6.8SC * DF2S6.8 DF2S6.8FS n DF2S8.2SC * DF2S8.2 DF2S8.2FS DF2S10FS DF2S12FS DF2S12FU kv DF2S16 ** DF2S16FS DF2S18 ** kv DF2S20 ** DF2S20FS DF2S24FS kv DF2S30 ** DF2S30FS kv *: New product **: Under development Number of Diodes 2 in 1 CST3 VESM USM S-MINI Dimensions and Internal Connections Vz IR @VR Typ. (ma) Max Typ. (mm) (mm) (mm) (mm) DF3A3.3 DF3A3.3FV DF3A3.3FU DF3A3.6 DF3A3.6FV DF3A3.6FU DF3A4.3FU DF3A5.6 DF3A5.6FV DF3A5.6FU DF3A5.6F DF3A6.2 DF3A6.2FV DF3A6.2FU DF3A6.2F DF3A6.8 DF3A6.8FV DF3A6.8FU DF3A6.8F ESD Immunity Contact Min 30 kv Number of Diodes 4 in 1 ESV USV SMV US6 Dimensions and Internal Connections Vz IR @VR Typ. (ma) Max Typ. ESD Immunity Contact Min (mm) (mm) (mm) (mm) DF5A3.3JE DF5A3.3FU DF5A3.3F DF5A3.6JE DF5A3.6FU DF5A3.6F DF5A5.6JE DF5A5.6FU DF5A5.6F kv DF5A6.2JE DF5A6.2FU DF5A6.2F DF5A6.8JE DF5A6.8FU DF5A6.8F DF6A6.8FU DF5A12FU kv /9 SCE0004L

7 (Bidirectional) Number of Diodes Single Type VBR IR max CST2 fsc ESC ESD Immunity Contact Min (mm) (mm) (ma) DF2B6.8 * DF2B6.8FS * DF2B6.8E* kv *: New product (High-Speed Type) Number of Diodes 4 in 1 ESV USV Dimensions and Internal Connections (mm) (mm) Typ. (ma) Typ. ESD Immunity Contact Min DF5A3.6CJE DF5A3.6CFU DF5A5.6CJE DF5A5.6CFU kv DF5A6.2CJE DF5A6.2CFU DF5A6.8CJE DF5A6.8CFU kv Number of Diodes 5 in 1 Vz CST6F ESD Contact and 1.1 Internal Typ. (ma) Typ. Min Connections (mm) DF7A6.2F * kv *: New product /9 SCE0004L

8 (Super High-Speed Type) Number of Diodes 2 in 1 4 in 1 CST3 VESM USM ESV USV SMV Dimensions and Internal Connections 5 (mm) (mm) (mm) (mm) (mm) (mm) DF3A5.6LFV * DF3A5.6LFU DF5A5.6LJE DF5A5.6LFU DF3A6.2LFV * DF3A6.2LFU DF5A6.2LJE DF5A6.2LFU DF3A6.8L * DF3A6.8LFV * DF3A6.8LFU DF5A6.8LJE DF5A6.8LFU DF5A6.8LF Typ. (ma) Typ. *: New product ESD Immunity Contact Min 8 kv (Ultra High-Speed Type) Number of Diodes Single Type Single Type VZ IZ CST2 fsc ( A) ESD @VZ Contact and Internal Min Typ. (ma) Max Max Min t= 0.48 Connections (mm) (mm) DF2S6.8U * DF2S6.8UFS * DF2S24U * (typ.) 0 8 kv *: New product Number of Diodes 2 in 1 VZ IZ USM ESD Immunity ( @VZ Contact and Internal Min Typ. (ma) Max Max Min Connections (mm) DF3A6.8UFU * kv *: New product 5 (Extreme High-Speed Type) Number of Diodes 1-bit 2-bit 4-bit VBUS protection fsc VESM CST6C UF6 Dimensions and Internal Connections t =0.48 VBR IR @VR Min (ma) Max Max ESD Immunity Contact Min (mm) (mm) (mm) (mm) DF2S6.8MFS DF3D6.8MFV (DF6F6.8MC) (DF6F6.8MTU) () 0 8 kv /9 SCE0004L

9 (Bidirectional) Number of Diodes 1-bit SC2 CST2 Dimensions and Internal Connections 0.3 VBR IR @VR Min (ma) Max Max (mm) (mm) DF2B6.8M2SC (DF2B6.8M1) 6.0 1(5) 0.05(0.5) (0.5) 0 DF2B12M2SC (DF2B12M1) (0.5) 0 ESD Immunity Contact Min 8 kv (Integrated EMI Filter) Number of Diodes 2 in 1 4 in 1 CST3 CST6F 1.1 Dimensions and Internal Connections (mm) (mm) VZ IZ ( A) RI/O Min Typ. (ma) Max Max Typ. (ma) ESD Immunity Contact Min DF3S6.8E ** DF6D6.8EF ** kv **: Under development (Integrated EMI Filter) Number of Diodes 4-bit 6-bit 8-bit VBR DFN8 DFN12 DFN16 IR @VR Min (ma) Max Typ. ESD Immunity Contact Min (mm) (mm) (mm) DF8G6.8ENU DF12H6.8ENU DF16E6.8ENU kv /9 SCE0004L

10 Switching Diodes Small-Signal Switching Diodes and Multiple Switching Diodes CST2 fsc ESC USC CST3 VESM SSM USM (SC-70) S-MINI (SC-59) VR IO (ma) trr (ns) (mm) (mm) (mm) (mm) (mm) (mm) (mm) (mm) (mm) 1SS SS412 1SS Typ. 1SS360 1SS300 1SS Typ. 1SS361 1SS361FV 1SS361 1SS301 1SS184 1SS362FV (1SS362) 1SS302 1SS (80) Typ. 1SS387 1SS387 1SS352 1SS193 1SS427 1SS (80) Typ. 1SS187 1SS Typ Typ. 1SS Typ. 1SS (30) Typ. 1SS403 1SS370 1SS SS397 (1SS311) (1500) Typ. 1SS Typ. The IO ratings enclosed in parenthesis are for those devices whose part numbers are enclosed in parentheses. The products shown in bold are also manufactured in offshore fabs /9 SCE0004L

11 USQ SMQ (SC-61) ESV USV SMV (SC-74A) ES6 US6 SM6 (SC-74) Remarks (mm) (mm) (mm) (mm) (mm) (mm) (mm) (mm) Low leakage current, Single Low leakage current, Series-connected HN4D01JU 1SS308 HN1D01FE HN1D01FU HN1D01F High-speed switching, Common anode HN4D02JU 1SS309 HN1D02FE HN1D02FU HN1D02F High-speed switching, Common cathode HN1D04FU High-speed switching, Series-connected 1SS382 1SS272 HN2D01JE (HN2D01FU) (HN2D01F) High-speed switching, Independent diodes (HN2D02FU) High-speed switching, Independent diodes High-speed switching, Independent diodes High-speed switching, Independent diodes HN1D03FU HN1D03F High-speed switching, Common cathode Common anode High current, Common anode High current, Common cathode (1SS306) High breakdown voltage, Independent diodes 1SS399 HN2D03F High breakdown voltage, Independent diodes High breakdown voltage, Series-connected /9 SCE0004L

12 Schottky Barrier Diodes Schottky Barrier Diodes (SBDs) Average Forward Currents (A) Peak Repetitive Reverse Voltage US-FLAT CUS03 CUS04 CUS05 CUS01 CUS10I40A * US-FLAT CUS06 CUS02 CUS10I30A * CRS06 CRS01 CRS04 CRS12 CRS03 CRS10I40A * CRS13 CRS05 CRS10I40B * 1 S-FLAT CRS11 CRS10I30A * CRS10I30B * CRS10I30C * CMS08 CMS10 M-FLAT CMS09 CMS10I40A * CMS10I30A * VS-8 TPCF8E02 (Note 1) US-FLAT CUS15I30A * CRS08 CRS15I40A * 1.5 S-FLAT CRS09 CRS15I30A * CRS15I30B * M-FLAT CMS15I40A * CRS14 CRS20I40A * S-FLAT CRS20I30A * CRS20I40B * CRS20I30B * 2 CMS06 CMS11 CMS14 M-FLAT CMS07 CMS20I40A * CMS17 CMS20I30A * CRS15 S-FLAT CRS30I30A * CMS01 CMS16 CMS15 3 CMS03 CMS19 CMS20 M-FLAT CMS18 CMS21 * CMS30I30A * CMS30I40A * 5 M-FLAT CMS04 CMS05 10 L-FLAT CLS01 CLS02 CLS03 Note 1: Two separate diodes The products shown in bold are also manufactured in offshore fabs. *: New product /9 SCE0004L

13 Small-Signal Schottky Barrier Diodes and Multiple Schottky Barrier Diodes Absolute Maximum Ratings VR Electrical Characteristics (Ta 25 C) VF IO (ma) Typ. (ma) CST2 fsc CST2B ESC USC VESM SSM USM (SC-70) 5 (mm) (mm) (mm) (mm) (mm) (mm) (mm) (mm) SS389 1SS367 1SS395 1SS385FV 1SS385 1SS378 1SS372 1SS413 1SS405 1SS406 1SS SS404 1SS /9 SCE0004L

14 S-MINI (SC-59) USQ SMQ (SC-61) Remarks (mm) (mm) (mm) 1SS321 1SS394 1SS384 1SS391 1SS377 1SS374 1SS402 Low leakage current, Common cathode Low VF, Independent diodes Low VF, Common cathode Low VF, Series-connected Low leakage current, High-speed SW Low IR Low VF, High current /9 SCE0004L

15 Small-Signal Schottky Barrier Diodes and Multiple Schottky Barrier Diodes (Continued) Absolute Maximum Ratings VR Electrical Characteristics (Ta 25 C) VF IO (ma) Typ. (ma) ES6 US6 SM6 (SC-74) 1.7 (mm) (mm) (mm) 2.8 Remarks Low leakage current, Common cathode HN2S01FU HN2S05FU HN2S01F Low VF Independent diodes Low VF Common cathode HN2S03FE HN2S03FU Low VF, Series-connected Low leakage current, High-speed SW Low IR HN2S04FU * The products shown in bold are also manufactured in offshore fabs. Low VF High current *: New product /9 SCE0004L

16 Small-Signal Schottky Barrier Diodes and Multiple Schottky Barrier Diodes (Continued) Absolute Maximum Ratings VR Electrical Characteristics (Ta 25 C) VF IO (ma) Typ. (ma) SC2 CST2 fsc CST2B ESC USC VESM 0.3 (mm) (mm) (mm) (mm) (mm) (mm) (mm) 1SS416 1SS DSF01S30SC * DSR01S30SC * S520 * CES520 * CUS520 * S521 * CES521 * CUS521 * CBS05F30 * CUS551V30 DSF07S30U * CUS08F30 * CUS10F30 * (0.56) (2) 100 (1SS417) (1SS417) CES388 ** CUS357 ** (0.56) (2) The IO ratings enclosed in parenthesis are for those devices whose part numbers are enclosed in parentheses. The products shown in bold are also manufactured in offshore fabs /9 SCE0004L

17 SSM USM (SC-70) S-MINI (SC-59) TESQ USQ SMQ (SC-61) Remarks (mm) (mm) (mm) (mm) (mm) (mm) 1SS422 Low VF Low VF Low IR Low IR Low VF Low VF High current, Single Improved VF and IR High current, Single Improved VF and IR High current, Single 1SS322 1SS294 1SS383 1SS319 Improved VF and IR Standard, Independent diodes 1SS393 1SS392 Standard, Common cathode (1SS423) 1SS396 1SS348 Standard, Series-connected High current, Single *: New product **: Under development /9 SCE0004L

18 Small-Signal Schottky Barrier Diodes and Multiple Schottky Barrier Diodes (Continued) Absolute Maximum Ratings VR Electrical Characteristics (Ta 25 C) VF IO (ma) Typ. (ma) ESV UFV US6 1.7 (mm) (mm) (mm) 5 Remarks Low VF Low VF Low IR Low IR Low VF Low VF CVJ10F30 High current, Single Improved VF and IR High current, Single Improved VF and IR High current, Single Improved VF and IR (0.56) (2) 100 HN2S02JE HN2S02FU Standard, Independent diodes Standard, Common cathode (0.56) (2) 100 Standard, Series-connected High current, Single The IO ratings enclosed in parenthesis are for those devices whose part numbers are enclosed in parentheses /9 SCE0004L

19 Radio-Frequency Schottky Barrier Diodes Applications VR VRM IF (ma) 1SS S-MINI (Single) VHF to S band mixer 1SS S-MINI (Twin) 1SS S-MINI (Twin) 1SS USC JDH2S01FS fsc JDH3D01S UHF MIX SSM (Twin) JDH3D01FV VESM (Twin) JDH2S02FS fsc JDH2S02SC SC2 VF (Typ.) IF (ma) (Typ.) VR /9 SCE0004L

20 Photodiodes Electrical/Optical Characteristics (Ta 25 C) Short-Circuit Current Dark Current Peak Sensitive Wavelength (nm) Half-Value Angle ( ) Impermeable to Visible Light Min Max E (mw/cm ( A) 2 ) VR (na) TPS703(F) TPS704(F) Side-view package Note: E radiant incidence; VR reverse voltage Applications Remote controls /9 SCE0004L

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