1 Watt High Linearity, High Gain InGaP HBT Amplifier. Product Description
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- Blaise Curtis
- 6 years ago
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1 Product Features MHz 24.7 db Gain +3 dbm P1dB +46 dbm Output IP3 +V Single Positive Supply Internal Active Bias Lead-free/ RoHS-compliant SOIC-8 & 4xmm DFN Package Applications Mobile Infrastructure WiBro Infrastructure TD-SCDMA Product Description The is a high dynamic range two-stage driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dbm OIP3 and +3 dbm of compressed 1-dB power. The amplifier is available in an industry-standard SMT lead-free/ RoHS-compliant SOIC-8 or 4xmm DFN package. All devices are 1% RF and DC tested. The product is targeted for use as linear driver amplifier for various current and next generation wireless technologies such as GPRS, GSM, CDMA, W-CDMA, TD-SCDMA, and WiBro, where high linearity and high power is required. The internal active bias allows the to maintain high linearity over temperature and operate directly off a + V supply. Functional Diagram Vcc1 Vbias1 RF In Vbias N/C Vcc2 / RF Out Vcc2 / RF Out N/C -S8G Vbias Vcc1 N/C 2 11 N/C RF In 3 1 Vcc2 / RF Out N/C 4 9 Vcc2 / RF Out N/C 8 N/C Vbias2 6 7 N/C -EG Specifications (1) Parameters Units Min Typ Max Operational Bandwidth MHz Test Frequency MHz 214 Gain db Input Return Loss db Output Return Loss db 9 Output P1dB dbm Output IP3 (2) dbm Noise Figure db 6. W-CDMA Channel - dbc ACLR dbm +21 Operating Current Range, Icc ma 34 4 Stage 1 Amp Current, Icc1 ma 8 Stage 2 Amp Current, Icc2 ma 31 Device Voltage, Vcc V Typical Performance (1) Parameters Units Typical Frequency MHz Gain (3) db Input Return Loss db 12. Output Return Loss db 1 9 Output P1dB (3) dbm Output IP3 dbm IS-9A Channel - dbc ACPR dbm +23. W-CDMA Channel - dbc ACLR dbm +21 Noise Figure db. 6. Supply Bias + 4 ma 3. The performance is shown for the -S8G (SOIC-8 package) at ºC. The -EG in a 4x mm DFN package offers approximately.db more gain and. db higher P1dB. 1. Test conditions unless otherwise noted: ºC, +V, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +1 dbm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Storage Temperature -6 to +1 C RF Input Power (continuous) + dbm Device Voltage +7 V Device Current 9 ma Device Power W Thermal Resistance, Rth 33 C/W Junction Temperature +2 C Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. -S8G -EG -S8PCB196 -S8PCB214 -EPCB196 -EPCB214 Description 1 Watt, High Gain InGaP HBT Amplifier (lead-free/ RoHS-compliant SOIC-8 package) 1 Watt, High Gain InGaP HBT Amplifier (lead-free/ RoHS-compliant 12-pin 4xmm DFN package) 196 MHz Evaluation Board 214 MHz Evaluation Board 196 MHz Evaluation Board 214 MHz Evaluation Board Standard tape / reel size = pieces for SOIC-8 package on a 7 reel Standard tape / reel size = 1 pieces for DFN package on a 7 reel. TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page 1 of 12 July 21
2 Typical Device Data (SOIC-8) S-Parameters (V CC = + V, I CC = 4 ma, T = C, calibrated to device leads) Gain (db) 3 2 Gain DB( S(2,1) ) S Swp Max 3GHz S Swp Max 3GHz Frequency (GHz) -.4 S(1,1) Swp Min.1GHz -.4 S(2,2) Swp Min.1GHz Notes: The gain for the unmatched device in -ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected that actual gain will be higher. The impedance plots are shown from 3 MHz, with markers placed at. 3. GHz in. GHz increment. S-Parameters for -S8G (V CC = + V, I CC = 4 ma, T = C, unmatched ohm system, calibrated to device leads) Freq (MHz) S11 (ang) S21 (ang) S12 (db) S12 (ang) S22 (ang) Device S-parameters are available for download from the website at: Application Circuit PC Board Layout Circuit Board Material:.14 FR4, four layer, 1 oz copper, Microstrip line details: width =., spacing =. The silk screen markers A, B, C, etc. and 1, 2, 3, etc. are used as placemarkers for the input and output tuning shunt capacitor C7. The markers and vias are spaced in. increments. TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page 2 of 12 July 21
3 -S8 18 MHz Reference Design Typical RF Performance at C Gain (db).4.1 Input Return Loss (db) Output Return Loss (db) Output P1dB (dbm) Output IP3 (dbm) (+1 dbm / tone, 1 MHz spacing) Noise Figure (db) Device / Supply Voltage + V 4 ma DNP 2.7 pf 2 Notes: 1. C7 is placed at silkscreen marker 2 and 3 on tqs evalboard 1 deg at 1.8 GHz away from pins 6 and All passive components are of size 63 unless otherwise noted C -4 C +8 C C -4 C +8 C C -4 C +8 C OIP3 vs. Frequency + C, +1 dbm/tone TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page 3 of 12 July 21
4 Typical RF Performance at C Frequency 196 MHz Gain 24.6 db Input Return Loss 12. db Output Return Loss 1 db Output P1dB +3 dbm Output IP3 (+1 dbm / tone, 1 MHz spacing) +48 dbm Channel Power (@- dbc ACPR, IS-9, 9 channels fwd) 23 dbm Noise Figure. db Device / Supply Voltage + V 4 ma 196 MHz Application Circuit (-S8PCB196) DNP 2.7 pf 2 Notes: 1. C7 is placed at silkscreen marker 2 and 3 on tqs evalboard deg at 1.96 GHz away from pins 6 and All passive components are of size 63 unless otherwise noted. + C -4 C +8 C C -4 C +8 C OIP3 vs. Frequency + C, +1 dbm/tone OIP3 vs. Temperature freq. = 196 MHz, 1961 MHz, +1 dbm/tone C -4 C +8 C OIP3 vs. Output Power freq. = 196 MHz, 1961 MHz, + C P1dB (dbm) P1dB vs. Frequency Circuit boards are optimized at 196 MHz -4 C + C +8 C NF (db) Temperature ( C) Noise Figure vs. Frequency 3-4 C + C +8 C ACPR (dbc) Output Power (dbm) ACPR vs. Channel Power IS-9, 9 Ch. Fwd, ±88 khz offset, 3 khz Meas BW, 196 MHz C + C +8 C Output Channel Power (dbm) TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page 4 of 12 July 21
5 -S8 21 MHz Reference Design for TD-SCDMA Applications Typical RF Performance at C 21 2 Gain (db) Input Return Loss (db) Output Return Loss (db) 9. 9 Output P1dB (dbm) Output IP3 (dbm) (+1 dbm / tone, 1 MHz spacing) Channel Power (dbm) (@- dbc ACPR, IS-9, 9 channels fwd) Noise Figure (db) 6 6 Device / Supply Voltage + V 4 ma DNP 2.7 pf 2 Note: 1. C7 is placed at silkscreen marker 2 and 3 on tqs evalboard deg at 2.1 GHz away from pins 6 and All passive components are of size 63 unless otherwise noted. + C -4 C +8 C C -4 C +8 C OIP3 vs. Frequency ACPR vs. Channel Power + C, +1 dbm/tone IS-9, 9 Ch. Fwd, ±88 khz offset, 3 khz Meas BW, 21 MHz C -4 C +8 C ACPR (dbc) Output Channel Power (dbm) TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page of 12 July 21
6 214 MHz Application Circuit (-S8PCB214) Typical RF Performance at C Frequency 214 MHz Gain 24.7 db Input Return Loss db Output Return Loss 9 db Output P1dB +29. dbm Output IP3 (+1 dbm / tone, 1 MHz spacing) +46 dbm Channel Power (@- dbc ACLR, W-CDMA, TM64 DPCH) +21 dbm Noise Figure 6 db Device / Supply Voltage + V 4 ma DNP 2.4 pf Notes: 1. C7 is placed at silkscreen marker 2 on tqs evalboard deg at 2.14 GHz away from pins 6 and 7. DNP C3. 2. All passive components are of size 63 unless otherwise noted C -4 C +8 C C -4 C +8 C C -4 C +8 C OIP3 vs. Frequency + C, +1 dbm/tone OIP3 vs. Temperature freq. = 214 MHz, 2141 MHz, +1 dbm/tone OIP3 vs. Output Power freq. = 214 MHz, 2141 MHz, + C P1dB vs. Frequency Circuit boards are optimized at 214 MHz Temperature ( C) Noise Figure vs. Frequency Output Power (dbm) ACLR vs. Channel Power 3GPP W-CDMA, Test Model 1+64 DPCH, ± MHz offset, 214 MHz -4 P1dB (dbm) 29-4 C + C +8 C NF (db) C + C +8 C ACLR (dbc) - -4 C + C +8 C Output Channel Power (dbm) TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page 6 of 12 July 21
7 -S8 2 MHz Reference Design for WiBro Applications Typical RF Performance at C Gain (db) Input Return Loss (db) Output Return Loss (db) Output P1dB (dbm) Output IP3 (dbm) (+1 dbm / tone, 1 MHz spacing) Device / Supply Voltage + V 4 ma DNP 2.2 pf Notes: 1. C7 is placed at the silkscreen marker 1 on tqs evalboard 4.2 degrees at 2. GHz away from pin 6 and 7. C3 is placed at silkscreen marker A or@ 4.2 degrees at 2. GHz away from pin All passive components are of size 63 unless otherwise noted OIP3 vs. Frequency + C, +1 dbm/tone 31 P1dB vs. Frequency 4 P1dB (dbm) TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page 7 of 12 July 21
8 Typical Device Data (DFN 4x mm) S-Parameters (V CC = + V, I CC = 4 ma, T = C, calibrated to device leads) Gain (db) 3 2 Gain DB( S(2,1) ) S Swp Max 3GHz S Swp Max 3GHz Frequency (GHz) -.4 S(1,1) Swp Min.1GHz -.4 S(2,2) Swp Min.1GHz Notes: The gain for the unmatched device in ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected that actual gain will be higher. The impedance plots are shown from 3 MHz, with markers placed at. 3. GHz in. GHz increment. S-Parameters for -EG (V CC = + V, I CC = 4 ma, T = C, unmatched ohm system, calibrated to device leads) Freq (MHz) S11 (ang) S21 (ang) S12 (db) S12 (ang) S22 (ang) Device S-parameters are available for download from the website at: Application Circuit PC Board Layout Circuit Board Material:.14 FR4, four layer, 1 oz copper, Microstrip line details: width =., spacing =. The silk screen markers A, B, C, etc. and 1, 2, 3, etc. are used as placemarkers for the input and output tuning shunt capacitor C7. The markers and vias are spaced in. increments. TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page 8 of 12 July 21
9 Typical RF Performance at C Frequency 196 MHz Gain db Input Return Loss 16 db Output Return Loss 1 db Output P1dB +3. dbm Output IP3 (+1 dbm / tone, 1 MHz spacing) +46. dbm Channel Power (@- dbc ACPR, IS-9, 9 channels fwd) +24. dbm Noise Figure. db Device / Supply Voltage + V 4 ma 196 MHz Application Circuit (-EPCB196) C -4 C +8 C + C -4 C +8 C C -4 C +8 C Supply Bias vs. Temperature OIP3 vs. Output Power freq. = 196 MHz, 1961 MHz, + C OIP3 vs. Temperature freq. = 196 MHz, 1961 MHz, +1 dbm/tone P1dB (dbm) Temperature ( C) P1dB vs. Frequency Circuit boards are optimized at 196 MHz -4 C + C +8 C NF (db) Output Power (dbm) Noise Figure vs. Frequency 3-4 C + C +8 C ACPR (dbc) Temperature ( C) - - ACPR vs. Channel Power IS-9, 9 Ch. Fwd, ±88 khz offset, 3 khz Meas BW, 196 MHz -6-4 C + C +8 C Output Channel Power (dbm) TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page 9 of 12 July 21
10 Typical RF Performance at C efrequency 214 MHz Gain. db Input Return Loss 24 db Output Return Loss 9 db Output P1dB +3. dbm Output IP3 (+1 dbm / tone, 1 MHz spacing) +46 dbm Channel Power (@- dbc ACPR, IS-9, 9 channels fwd) +22 dbm Noise Figure 6 db Device / Supply Voltage + V 4 ma 214 MHz Application Circuit (-EPCB214) 24 + C -4 C +8 C C -4 C +8 C C -4 C +8 C Supply Bias vs. Temperature OIP3 vs. Output Power freq. = 214 MHz, 2141 MHz, + C OIP3 vs. Temperature freq. = 214 MHz, 2141 MHz, +1 dbm/tone Temperature ( C) P1dB vs. Frequency Circuit boards are optimized at 214 MHz Output Power (dbm) Noise Figure vs. Frequency Temperature ( C) -4 ACLR vs. Channel Power 3GPP W-CDMA, Test Model 1+64 DPCH, ± MHz offset, 214 MHz P1dB (dbm) C + C +8 C NF (db) C + C +8 C ACLR (dbc) - -4 C + C +8 C Output Channel Power (dbm) TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page 1 of 12 July 21
11 -S8G (Lead-Free SOIC-8 Package) Mechanical Information This package is lead-free/ RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum C reflow temperature) and lead (maximum 2 C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with an G designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the Application Notes section. ESD / MSL Information ESD Rating: Class 1B Value: Passes V to <1V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 ESD Rating: Class IV Value: Passes 2V min. Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C11 MSL Rating: Level 2 at + C convection reflow Standard: JEDEC Standard J-STD-2 Mounting Config. Notes Mounting Configuration / Land Pattern 1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a.mm (#8 /.1 ) diameter drill and have a final plated thru diameter of. mm (.1 ). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink.. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters Functional Pin Layout Vcc1 1 8 N/C Vbias1 2 7 Vcc2 / RF Out RF In 3 6 Vcc2 / RF Out Vbias2 4 N/C Function Pin No. Vcc1 1 Input 3 Output/ Vcc2 6, 7 Vbias1 2 Vbias2 4 GND Backside Paddle N/C or GND, 8 TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page 11 of 12 July 21
12 -EG (Lead-Free DFN 4x mm Package) Mechanical Information This package is lead-free/ RoHS-compliant. The plating material on the leads is Matte Tin. It is compatible with both lead-free (maximum C reflow temperature) and lead (maximum 2 C reflow temperature) soldering processes. -EG Outline Drawing Product Marking The component will be marked with an -EG designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the Application Notes section. ESD / MSL Information ESD Rating: Class 1B Value: Passes V to <1V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 Mounting Configuration / Land Pattern ESD Rating: Class IV Value: Passes 2V min. Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C11 MSL Rating: Level 2 at + C convection reflow Standard: JEDEC Standard J-STD-2 Mounting Config. Notes 1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a.mm (#8 /.1 ) diameter drill and have a final plated thru diameter of. mm (.1 ). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink.. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters Functional Pin Layout Vbias1 1 N/C 2 RF In 3 N/C 4 N/C Vbias Vcc1 11 N/C 1 Vcc2 / RF Out 9 Vcc2 / RF Out 8 N/C 7 N/C Function Pin No. Vcc1 12 Input 3 Output /Vcc2 9, 1 Vbias1 1 Vbias2 6 GND Backside Paddle N/C or GND 2, 4,, 7, 8, 11 TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page 12 of 12 July 21
4W High Linearity InGaP HBT Amplifier. Product Description
AH42 Product Features 4 27 MHz +3.7 dbm P1dB -49 dbc ACLR @ 26 dbm db Gain @ 2 MHz 8 ma Quiescent Current + V Single Supply MTTF > 1 Years Lead-free/green/RoHS-compliant 12-pin 4xmm DFN Package Applications
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More informationTypical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
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More informationTypical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
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More informationTypical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
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More informationTypical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
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Applications VSAT Point-to-Point Radio Test Equipment & Sensors -pin 5x5 mm QFN package Product Features Functional Block Diagram RF Frequency Range: 15. GHz IF Frequency: DC GHz LO Frequency: 19 GHz LO
More informationFeatures. Specification Min. Typ. Max. Input Return Loss MHz db. Output Return Loss MHz db. Reverse Isolation -22.
Product Description RG512 is a low current and low noise Gain Block Amplifier in a low-cost surface mount package and provides 30dBm high OIP3 and 1.62dB Noise Figure at 1900MHz. It is fabricated on a
More informationFeatures. = +25 C, IF = 100 MHz, LO = 0 dbm, Vcc1, 2, 3, = +5V, G_Bias = +3.5V*
v3.1 LO AMPLIFIER, 7 - MHz Typical Applications The HMC684LP4(E) is Ideal for: Cellular/3G & LTE/WiMAX/4G Basestations & Repeaters GSM, CDMA & OFDM Transmitters and Receivers Features High Input IP3: +32
More informationHMC581LP6 / 581LP6E MIXERS - SMT. HIGH IP3 RFIC DUAL DOWNCONVERTER, MHz. Typical Applications. Features. Functional Diagram
Typical Applications The HMC1LP6 / HMC1LP6E is ideal for Wireless Infrastructure Applications: GSM, GPRS & EDGE CDMA & W-CDMA Cellular / 3G Infrastructure Functional Diagram Features +26 dbm Input IP3
More informationFeatures. = +25 C, LO = 0 dbm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V *
Typical Applications The is Ideal for: Cellular/3G & LTE/WiMAX/4G Basestations & Repeaters GSM, CDMA & OFDM Transmitters and Receivers Features High Input IP3: +38 dbm 8 db Conversion Loss @ 0 dbm LO Optimized
More informationAbsolute Maximum Ratings Parameter Rating Unit Max Supply Current (I C1 ) at V CC typ. 150 ma Max Supply Current (I C2 ) at V CC typ. 750 ma Max Devic
850MHz 1 Watt Power Amplifier with Active Bias SPA2118Z 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description RFMD s SPA2118Z is a high efficiency GaAs Heterojunction
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Flat Gain, High IP3 Monolithic Amplifier 50Ω 0.01 to 5 GHz The Big Deal Excellent Gain Flatness and Return Loss over 50-1000 MHz High IP3 vs. DC Power consumption Broadband High Dynamic Range without external
More informationTGA2627-SM 6-12 GHz GaN Driver Amplifier
Applications Commercial and Military Radar Communications Electronic Warfare (EW) Product Features Functional Block Diagram Frequency Range: 6-12 GHz Push-Pull Configuration Low Harmonic Content; -4 dbc
More informationRFOUT/ VC2 31 C/W T L =85 C
850MHz 1 Watt Power Amplifier with Active Bias SPA-2118(Z) 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS RoHS Compliant and Pb-Free Product (Z Part Number) Package: ESOP-8 Product Description RFMD s SPA-2118
More informationFeatures. = +25 C, Vs = 5V, Vpd = 5V
v1.117 HMC326MS8G / 326MS8GE AMPLIFIER, 3. - 4. GHz Typical Applications The HMC326MS8G / HMC326MS8GE is ideal for: Microwave Radios Broadband Radio Systems Wireless Local Loop Driver Amplifier Functional
More informationHMC485MS8G / 485MS8GE. Features OBSOLETE. = +25 C, LO = 0 dbm, IF = 200 MHz*, Vdd= 5V
Typical Applications High Dynamic Range Infrastructure: GSM, GPRS & EDGE CDMA & W-CDMA Cable Modem Termination Systems Functional Diagram Features +34 dbm Input IP3 Conversion Loss: db Low LO Drive: -2
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK Typical Applications The is ideal
More informationFeatures OBSOLETE. = +25 C, IF = 1.45 GHz, LO = +13 dbm [1]
v2.614 Typical Applications The HMC412AMS8G / HMC412AMS8GE is ideal for: Long Haul Radio Platforms Microwave Radio VSAT Functional Diagram Features General Description Parameter Min. Typ. Max. Units Frequency
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v2.514 MIXER, 2.5-7. GHz Typical
More informationGHz High Dynamic Range Amplifier
Features.2 to 6. GHz Range +41 dbm Output IP3 1.7 db db +23 dbm P1dB LGA Package Single Power Supply Single Input Matching The is a high dynamic range amplifier designed for applications operating within
More informationFeatures. = +25 C, IF= 100 MHz, LO= +15 dbm* Parameter Min. Typ. Max. Min. Typ. Max. Units
v3.514 MIXER, 5.5-14. GHz Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Sensors Military End-Use Functional Diagram Features Passive Double Balanced
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
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More informationCMD197C GHz Distributed Driver Amplifier
Features Functional Block Diagram Wide bandwidth High linearity Single positive supply voltage On chip bias choke Pb-free RoHs compliant 4x4 mm SMT package Description The CMD197C4 is a wideband GaAs MMIC
More informationTGP2108-SM 2.5-4GHz 6-Bit Digital Phase Shifter
TGP218-SM Product Description The Qorvo TGP218-SM is a packaged 6-bit digital phase shifter fabricated on Qorvo s high performance.15 um GaAs phemt process. It operates over 2.5-4 GHz while providing 36
More informationFeatures. Parameter Min. Typ. Max. Min. Typ. Max. Units
v. DOWNCONVERTER, - GHz Typical Applications The is ideal for: Point-to-Point and Point-to-Multi-Point Radios Military Radar, EW & ELINT Satellite Communications Maritime & Mobile Radios Features Conversion
More information= +25 C, IF= 100 MHz, LO = +17 dbm*
v3.514 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use Functional Diagram Wide IF Bandwidth: DC - 3.5
More informationFeatures. = +25 C, 50 Ohm System
v1.111 47 Analog Phase Shifter, Typical Applications The is ideal for: EW Receivers Military Radar Test Equipment Satellite Communications Beam Forming Modules Features Wide Bandwidth: 47 Phase Shift Low
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Applications Satellite Communications Data Link Radar Product Features Functional Block Diagram Frequency Range: 13.4 16.5 GHz PSAT: > 41 dbm (PIN = 18 dbm) PAE: > 29% (PIN = 18 dbm) Large Signal Gain:
More informationHMC814LC3B FREQ. MULTIPLIERS - ACTIVE - SMT. SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, GHz OUTPUT. Features. Typical Applications
Typical Applications The is ideal for: Clock Generation Applications: SONET OC-192 & SDH STM-64 Point-to-Point & VSAT Radios Test Instrumentation Military & Space Sensors Functional Diagram Features High
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v3.1 HMC98LC Typical Applications The HMC98LC is ideal for: Point-to-Point and Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Maritime & Mobile Radio Functional Diagram
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TGC21-SM Product Description The QORVO TGC21-SM is a Ku-Band image reject upconverter with integrated LO buffer amplifier and output variable gain amplifier. The TGC21-SM operates from an RF of 1 to 16
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v.91 HMC4MS8G / 4MS8GE MIXER, 9. - 15. GHz Typical Applications The HMC4MS8G / HMC4MS8GE is ideal for: Long Haul Radio Platforms Microwave Radio VSAT Features Conversion Loss: 8. db Noise Figure: 8. db
More informationFeatures. = +25 C, Vdd = +7V, Idd = 820 ma [1]
Typical Applications The is ideal for use as a power amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Sensors Military End-Use Space Functional Diagram Features Saturated
More informationOBSOLETE HMC422MS8 / 422MS8E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram
v4.712 Typical Applications The HMC422MS8 / HMC422MS8E is ideal for: MMDS & ISM Wireless Local Loop WirelessLAN Cellular Infrastructure Functional Diagram Electrical Specifications, T A = +2 C Features
More informationFeatures. = +25 C, Vdd = +4.5V, +4 dbm Drive Level
Typical Applications The is ideal for: Clock Generation Applications: SONET OC-192 & SDH stm-64 Point-to-Point & VSAT Radios Test Instrumentation Military & Space Sensors Features High Output Power: +21
More informationFeatures OBSOLETE. = +25 C, As a Function of LO Drive. LO = +10 dbm. IF = 70 MHz
v1.112 HMC27AS8 / 27AS8E BALANCED MIXER,.7-2. GHz Typical Applications The HMC27AS8 / HMC27AS8E is ideal for: Base Stations Cable Modems Portable Wireless Functional Diagram Features Conversion Loss: 9
More informationFeatures OBSOLETE. LO = +19 dbm, IF = 100 MHz Parameter
Typical Applications The HMC351S8 / HMC351S8E is ideal for: Cellular Basestations Cable Modems Fixed Wireless Access Systems Functional Diagram Electrical Specifications, T A = +25 C Features Conversion
More informationFeatures. = +25 C, IF = 0.5 GHz, LO = +15 dbm* Parameter Min. Typ. Max. Min. Typ. Max. Units
v1.514 Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use Functional Diagram Features Passive: No DC Bias Required
More informationFeatures. = +25 C, 50 Ohm System
v.211 18 Analog Phase Shifter, 2-2 GHz Typical Applications The is ideal for: EW Receivers Military Radar Test Equipment Satellite Communications Beam Forming Modules Features Wide Bandwidth: 2-2 GHz 18
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PRELIMINARY DATA SHEET SKY67151-396LF: 0.7-3.8 GHz Ultra Low-Noise Amplifier Applications LTE, GSM, WCDMA, TD-SCDMA infrastructure Ultra low-noise, high performance LNAs Cellular repeaters High temperature
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GaAs MMIC Double Balanced Mixer MM132HSM 1. Device Overview 1.1 General Description The MM132HSM is a GaAs MMIC double balanced mixer that is optimized for high frequency applications. MM1-832HSM is a
More informationFeatures. = +25 C, As a Function of LO Drive & Vdd. IF = 1 GHz LO = -4 dbm & Vdd = +4V
v4.414 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use Functional Diagram Integrated LO Amplifier: -4
More informationThe Hmc869LC5 is ideal for: Point-to-Point and Point-to-Multi-Point Radio. Parameter Min. Typ. Max. Units
Typical Applications The Hmc86LC is ideal for: Point-to-Point and Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Functional Diagram Features Electrical Specifications, T
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
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Page 1 The is a highly linear passive GaAs double balanced MMIC mixer suitable for both up and down-conversion applications. As with all Marki Microwave mixers, it features excellent conversion loss, isolation
More informationParameter Min. Typ. Max. Min. Typ. Max. Units
Typical Applications The is ideal for: Point-to-Point and Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Functional Diagram Features db Conversion Gain Image Rejection:
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DATASHEET ISL008 NOT RECOMMENDED FOR NEW DESIGNS RECOMMENDED REPLACEMENT PART ISL01 Data Sheet MMIC Silicon Bipolar Broadband Amplifier FN21 Rev 0.00 The ISL00, ISL007, ISL008 and ISL009, ISL0, ISL011
More informationFeatures. = +25 C, IF= 100 MHz, LO= +13 dbm* Parameter Min. Typ. Max. Min. Typ. Max. Units
Features Passive Double Balanced Topology High LO/RF Isolation: 48 db Low Conversion Loss: 7 db Wide IF Bandwidth: DC - GHz Robust 1,000V esd, Class 1C Typical Applications The is ideal for: Point-to-Point
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Typical Applications The HMC75LP4(E) is ideal for: OC-192 Receivers Gbps Ethernet Receivers Gbps Fiber Channel Receivers Broadband Test & Measurement Functional Diagram Features Electrical Specifications,
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Data Sheet FEATURES Passive; no dc bias required Conversion loss 8 db typical for 1 GHz to 18 GHz 9 db typical for 18 GHz to 26 GHz LO to RF isolation: 4 db Input IP3: 19 dbm typical for 18 GHz to 26 GHz
More information6 GHz to 26 GHz, GaAs MMIC Fundamental Mixer HMC773A
FEATURES Conversion loss: 9 db typical Local oscillator (LO) to radio frequency (RF) isolation: 37 db typical LO to intermediate frequency (IF) isolation: 37 db typical RF to IF isolation: db typical Input
More informationFeatures. PFD Output Voltage 2000 mv, Pk - Pk. PFD Gain Gain = Vpp / 2π Rad khz 100 MHz Square Wave Ref.
HMC98LP5 / 98LP5E Typical Applications The HMC98LP5(E) is ideal for: Satellite Communication Systems Point-to-Point Radios Military Applications Sonet Clock Generation Functional Diagram Features Ultra
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Features Functional Block Diagram Low conversion loss High isolation Wide IF bandwidth Passive double balanced topology Pb-free RoHs compliant 3x3 mm SMT package Description The CMD178C3 is a general purpose
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com HMC148* Product Page Quick Links Last Content Update: 11/1/216 Comparable
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Page 1 The is a passive GaAs double balanced MMIC mixer suitable for both up and down-conversion applications. As with all Marki Microwave mixers, it features excellent conversion loss, isolation and spurious
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More informationParameter Min. Typ. Max. Min. Typ. Max. Units
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More information= +25 C, IF= 100 MHz, LO = +15 dbm*
v3.514 Typical Applications Features The is ideal for: Point-to-Point and Point-to-Multi-Point Radio Digital Radio VSAT Functional Diagram Wide IF Bandwidth: DC - 3.5 GHz Image Rejection: 35 db LO to RF
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