FH1. Functional Diagram. Product Description. Product Features. Applications. Typical Performance (6) Specifications (1) Absolute Maximum Rating

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Rodney Pierce
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1 FH Product Features 5 4 MHz Low Noise Figure 8 db Gain +4 dbm OIP3 + dbm PdB Single or Dual Supply Operation Lead-free/Green/RoHS-compliant SOT-89 Package MTTF > years Applications Mobile Infrastructure CATV / DBS W-LAN / ISM Defense / Homeland Security Product Description The FH is a high dynamic range FET packaged in a lowcost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The device combines dependable performance with superb quality to maintain MTTF values exceeding years at mounting temperatures of +85 C. The FH is available the environmentally-friendly lead-free/green/rohs-compliant SOT-89 package. The device utilizes a high reliability GaAs MESFET technology and is targeted for applications where high linearity is required. It is well suited for various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the FH will work for other applications within the 5 to 4 MHz frequency range such as fixed wireless. Functional Diagram 4 3 Function Pin No. Gate Drain 3 Source, 4 Specifications () DC Electrical Parameter Units Min Typ Max Saturated Drain Current, Idss () ma 4 7 Transconductance, Gm ms Pinch-off Voltage, Vp (3) V RF Parameter Units Min Typ Max Operational Bandwidth MHz 5 4 Test Frequency MHz 8 Small-signal Gain, Gss db 7 8 Max Stable Gain, Gmsg db 3 Output IP3 (4) dbm PdB dbm + Minimum Noise Figure (5) db.77 Drain Bias V +5 Gate Bias V Typical Performance (6) Parameter Units Typical Frequency MHz S db S db S db Output IP3 (4) dbm Output PdB dbm Noise Figure db Drain Bias 4mA Gate Voltage V 6. The device requires appropriate matching to become unconditionally stable. Parameters reflect performance in an appropriate application circuit.. DC and RF parameters are measured under the following conditions unless otherwise noted: 5 C with Vds = 5V, Vgs = V, in a 5 Ω system.. Idss is measured with Vgs = V. 3. Pinch-off voltage is measured with Ids =.6 ma. 4. 3OIP measured with two tones at an output power of +5 dbm/tone separated by MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a : rule. 5. The minimum noise figure has GS = GL = GOPT. Absolute Maximum Rating Parameter Rating Storage Temperature 5 to +5 C Drain to Source Voltage +7 V Gate to Source Voltage -6 V Gate Current 4.5 ma RF Input Power (continuous) 4 db above Input PdB Junction Temperature +6 C Thermal Resistance, Rth 59 C / W Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. FH-G FH-PCB Standard T/R size = pieces on a 7 reel. Description (lead-free/green/rohs-compliant SOT-89 package) 8 - MHz Evaluation Board TriQuint Semiconductor, Inc Phone FAX: info-sales@tqs.com Web site: Page of 7 Jan

2 -4. FH Typical Device Data Data is shown at a biasing configuration of V DS = +5 V, I DS = 4 ma, 5 C for the unmatched device in a 5 ohm system) S and MSG (db) Gain and Max. Stable Gain DB( S(,) ) DB(GMax()) S Swp Max 6GHz S Swp Max 6GHz The gain for the unmatched device in 5 ohm system is shown as the trace in blue color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, as high as the maximum stable gain. The maximum stable gain is shown in the red line. The impedance plots are shown from 6 MHz, with markers placed at.5 6. GHz in.5 GHz increments Swp Min.GHz Swp Min.GHz O IP 3 (d B m ) Output IP3 vs. Temperature Temperature ( C) 5V % Idss O IP 3 (d B m ) Output IP3 vs. Output Power Output Power per tone (dbm) 5V % Idss Noise Figure vs. Frequency.5.5 TriQuint Semiconductor, Inc Phone FAX: info-sales@tqs.com Web site: Page of 7 Jan N o is e F ig u re (d B ) NF (unmatched device) Minimum NF S-Parameters (V D = +5 V, I D = 4 ma, V G = V, 5 C, calibrated to device leads) Freq (MHz) S (db) S (ang) S (db) S (ang) S (db) S (ang) S (db) S (ang) Noise Parameters (V D = +5 V, I D = 4 ma, V G = V, 5 C, calibrated to device leads) Freq (MHz) NF,min (db) MagOpt (mag) AngOpt (deg) Rn Device S-parameters and noise are available for download off of the website at:

3 FH 8- MHz Application Circuit (FH-PCB8-) Frequency MHz Gain db S db S db PdB dbm OIP3 dbm Noise Figure db Supply Current ma S-Parameters DB( S(,) ) (L) DB( S(,) ) (R) DB( S(,) ) (R) S, S (db) R4 Ohm Vcc C6 pf C4.8 uf C3 pf R6 6 Ohm R7 6 Ohm L 8 nh C 3.6 Ohm R Ohm R Ohm C7 C5 C7. pf C5 5.6 nh C pf. The right edge of C5 is 9 mil from the left edge of pin of the FH-G. The right edge of C7 is 7 mil from the right edge of C5.. Circuit Board Material:.4 Getek MLDSS (εr = 4.), oz copper. The main microstrip line has a line impedance of 5 Ω. 3. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. 4. A dc blocking capacitor needs to be placed before C if DC is present at the input of the circuit. Reference Design: 35 MHz, 7 db Gain Frequency MHz Gain db DB( S(,) ) (L) DB( S(,) ) (R) DB( S(,) ) (R) S db S db PdB dbm + 5 OIP3 dbm +39 Noise Figure db Supply Current ma Frequency (MHz) R=39 Ohm C= pf R=39 Ohm C= pf - - S, S (db) ID=C R=3.9 Ohm ID=R C=68 pf NET="FH" ID=L L=47 nh ID=R8 L=39 nh ID=C C= pf. Circuit Board Material:.4 Getek MLDSS (εr = 4.), oz copper. The main microstrip line has a line impedance of 5 Ω.. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. TriQuint Semiconductor, Inc Phone FAX: info-sales@tqs.com Web site: Page 3 of 7 Jan

4 FH Reference Design: 7 MHz, 4 db Gain Frequency MHz Gain db S db S db PdB dbm +.6 OIP3 dbm +4 Noise Figure db Supply Current ma 4 R=4 Ohm C= pf R=4 Ohm C= pf (db) DB( S(,) ) (L) DB( S(,) ) (R) DB( S(,) ) (R) S, S (db) ID=R C=4 pf NET="FH" ID=L L= nh ID=R8 L=8 nh ID=R R=4 Ohm ID=C C= pf. Circuit Board Material:.4 Getek MLDSS (εr = 4.), oz copper. The main microstrip line has a line impedance of 5 Ω.. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Reference Design: 6 MHz, 5 db Gain Frequency MHz Gain db S db S db PdB dbm +.4 OIP3 dbm Noise Figure db.8.9. Supply Current ma 4 C= pf R= Ohm C=.8e4 pf DB( S(,) ) (L) DB( S(,) ) (R) DB( S(,) ) (R) S, S (db) ID=C C= pf R= Ohm ID=R L= nh NET="FH" ID=L L= nh ID=C C= pf R=e4 Ohm C=. pf R=3.3 Ohm. Circuit Board Material:.4 Getek MLDSS (εr = 4.), oz copper. The main microstrip line has a line impedance of 5 Ω.. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. TriQuint Semiconductor, Inc Phone FAX: info-sales@tqs.com Web site: Page 4 of 7 Jan

5 FH Reference Design: 46 MHz, db Gain Frequency MHz Gain db S db S db -6 PdB dbm +.6 OIP3 dbm +4 Noise Figure db Supply Current ma DB( S(,) ) (L) DB( S(,) ) (R) DB( S(,) ) (R) S, S (db) R=75 Ohm C= pf R=75 Ohm C= pf ID=C C= pf ID=R L=36 nh NET="FH" ID=L L= nh R=5 Ohm ID=R L= nh ID=C C= pf. Circuit Board Material:.4 Getek MLDSS (εr = 4.), oz copper. The main microstrip line has a line impedance of 5 Ω.. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Reference Design: 79 MHz, 9 db Gain Frequency GHz Gain db S db - -8 S db PdB dbm + OIP3 dbm +4 Noise Figure db.3 Supply Current ma DB( S(,) ) (L) DB( S(,) ) (R) DB( S(,) ) (R) S, S (db) C= pf R=56 Ohm ID=C4 C=e4 pf C= pf R=56 Ohm NET="FH" ID=L L=7 nh ID=C C= pf L= nh ID=R L=8. nh ID=R L=. nh ID=C C= pf. Circuit Board Material:.4 Getek MLDSS (εr = 4.), oz copper. The main microstrip line has a line impedance of 5 Ω.. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. TriQuint Semiconductor, Inc Phone FAX: info-sales@tqs.com Web site: Page 5 of 7 Jan

6 FH Reference Design: 79 MHz, 7 db Gain Frequency GHz Gain db DB( S(,) ) (R) DB( S(,) ) (L) DB( S(,) ) (R) 8 S db S db PdB dbm + OIP3 dbm +4 6 Noise Figure db... 5 Voltage V +5 Current ma ID=C4 C= pf - - S, S (db) NF (db ) 4 3 Noise Figure vs. Frequency 5 C 5 C 9 C Frequency (MHz) C= pf R=36 Ohm R=36 Ohm C= pf ID=C C= pf ID=R L= nh NET="FH" ID=L L=33 nh ID=C C= pf R= Ohm. Circuit Board Material:.4 Getek MLDSS (εr = 4.), oz copper. The main microstrip line has a line impedance of 5 Ω.. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Reference Design: 88 MHz, 8 db Gain Frequency GHz Gain db S db -6 S db PdB dbm + OIP3 dbm +4 Noise Figure db Supply Current ma 4 ID=C4 C=e4 pf (db) DB( S(,) ) (R) DB( S(,) ) (L) DB( S(,) ) (R) S, S (db) C= pf R=36 Ohm R=36 Ohm C= pf ID=C C= pf ID=R L= nh NET="FH" ID=L L=33 nh ID=C C= pf R=e4 Ohm. Circuit Board Material:.4 Getek MLDSS (εr = 4.), oz copper. The main microstrip line has a line impedance of 5 Ω.. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. TriQuint Semiconductor, Inc Phone FAX: info-sales@tqs.com Web site: Page 6 of 7 Jan

7 FH FH-G Mechanical Information This package is lead-free/green/rohs-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 6 C reflow temperature) and leaded (maximum 45 C reflow temperature) soldering processes. FHG XXXX-X Outline Drawing Product Marking The FH-G will be marked with an FHG designator. A lot code ( XXXX-X ) is also marked below the part designator on the top surface of the package. Tape and reel specifications for this part are located on the website in the Application Notes section. MSL / ESD Rating Land Pattern ESD Rating: Class B Value: Passes /5V to <V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD-A4 ESD Rating: Class IV Value: Passes /V to <V Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD-C MSL Rating: Level 3 at +6 C convection reflow Standard: JEDEC Standard J-STD- Mounting Config. Notes. Ground / thermal vias are critical for the proper performance of this device. Vias should use a.35mm (#8 /.35 ) diameter drill and have a final plated thru diameter of.5 mm (. ).. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. TriQuint Semiconductor, Inc Phone FAX: info-sales@tqs.com Web site: Page 7 of 7 Jan

1 Watt High Linearity, High Gain InGaP HBT Amplifier. Product Description

1 Watt High Linearity, High Gain InGaP HBT Amplifier. Product Description Product Features 18 24 MHz 24.7 db Gain +3 dbm P1dB +46 dbm Output IP3 +V Single Positive Supply Internal Active Bias Lead-free/ RoHS-compliant SOIC-8 & 4xmm DFN Package Applications Mobile Infrastructure