4 SiC epitaxial wafer specification for power device application
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1 4 SiC epitaxial wafer specification for power device application LB model Diameter 4 (100mm) 4 (100mm) 4 (100mm) Polytype 4H 4H 4H Surface (0001)Siface (0001)Siface (0001)Siface Offorientation 4degoff 4degoff 4degoff Conductivity ntype ntype ntype Dopant Nitrogen Nitrogen Nitrogen Carrier Concentration 3E142E18/cm3 3E142E18/cm3 3E152E18/cm3 All Meas, points ±12% ±12% ±6% ±15% ±7% Thickness 150mm 150mm 30mm All Meas, points ±8% ±8% ±3% ±10% ±4% SD PDD DD Items HGE 0.5/cm 2 0.5/cm 2 1.0/cm 2 (THK 30um) (THK 30um) (THK 15um) 1.2/cm 2 1.2/cm 2 5.0/cm 2 (THK 30um) (THK 30um) (THK 15um) 2.5/cm 2 2.5/cm 2 8.0/cm 2 (THK 30um) (THK 30um) (THK 15um) Notes 1) Other dimensional specifications are similar to definition in SEMI M12. 2) Measurement points for Carrier concentration (one direction + most OD) and Thickness 4 10mm pitch + Edge (EE = 4mm) All measurement points y Typical number Standard BPD /cm 2 y Typical number x x Carrier Concentration OF Thickness OF
2 4 SiC epitaxial wafer specification for power device application [ Surface Morphology ] Notes: 1) Defect limit apply to entire surface except for edge exclusion area. Edge exclusion = 3mm for 4,6 ( 2mm for 3 ) Options: 1) Csurf epi is available. 2) Other off orientations are available on request for provided substrates by customer. 3) Repolish on backside after epitaxial growth is available on request. [ contact ] H. Kanazawa Mail : kanazawa.hiroshi.xhjhc@showadenko.com M. Shigeto Mail : shigeto.masashi.xhajd@showadenko.com Y. Matsumura Mail : matsumura.yukihisa.xispc@showadenko.com Tel: , Fax: Marketing unit Business unit center SHOWA DENKO K.K.
3 6 SiC epitaxial wafer specification for power device application Items LB model HGE Typical number Standard Typical number Diameter 6 (150mm) 6 (150mm) 6 (150mm) Polytype 4H 4H 4H Surface (0001)Siface (0001)Siface (0001)Siface Offorientation 4degoff 4degoff 4degoff Conductivity ntype ntype ntype Dopant Nitrogen Nitrogen Nitrogen Carrier Concentration 3E142E18/cm3 3E142E18/cm3 3E152E18/cm3 All Meas, points ±15% ±15% ±10% ±25% ±15% Thickness 150mm 150mm 30mm All Meas, points ±10% ±10% ±5% ±15% ±6% SD PDD DD 0.5/cm 2 0.5/cm 2 1.0/cm 2 (THK 30um) (THK 30um) (THK 30um) 1.2/cm 2 1.2/cm 2 5.0/cm 2 (THK 30um) (THK 30um) (THK 30um) 2.5/cm 2 2.5/cm 2 8.0/cm 2 (THK 30um) (THK 30um) (THK 30um) BPD /cm 2 Notes 1) Other dimensional specifications are similar to definition in SEMI M12. 2) Measurement points for Carrier concentration (one direction + most OD) and Thickness 6 15mm pitch + Edge (EE = 4mm) All measurement points y y x x Carrier Concentration OF Thickness OF
![6 SiC epitaxial wafer specification for power device application [ Surface Morphology ] Notes: 1) Defect limit apply to entire surface except for edge exclusion area.](/docs-images/82/86974309/images/4-2.jpg "Edge exclusion = 3mm for 4,6 ( 2mm for 3 ) Options: 1) Csurf epi is available. 2) Other off orientations are available on request for provided substrates by customer.")
![3) Repolish on backside after epitaxial growth is available on request. [ contact ] H. Kanazawa Mail : kanazawa.hiroshi.xhjhc@showadenko.com M. Shigeto Mail : shigeto.](/docs-images/82/86974309/images/4-8.jpg "masashi.xhajd@showadenko.com Y. Matsumura Mail : matsumura.yukihisa.xispc@showadenko.")
4 6 SiC epitaxial wafer specification for power device application [ Surface Morphology ] Notes: 1) Defect limit apply to entire surface except for edge exclusion area. Edge exclusion = 3mm for 4,6 ( 2mm for 3 ) Options: 1) Csurf epi is available. 2) Other off orientations are available on request for provided substrates by customer. 3) Repolish on backside after epitaxial growth is available on request. [ contact ] H. Kanazawa Mail : kanazawa.hiroshi.xhjhc@showadenko.com M. Shigeto Mail : shigeto.masashi.xhajd@showadenko.com Y. Matsumura Mail : matsumura.yukihisa.xispc@showadenko.com Tel: , Fax: Marketing unit Business unit center SHOWA DENKO K.K.
![CS 5E15 Production Production 1E19 150 5E15 ~250 1E19 [ contact ] H. Kanazawa Mail : kanazawa.hiroshi.xhjhc@showadenko.](/docs-images/82/86974309/images/5-4.jpg "com M. Shigeto Mail : shigeto.masashi.xhajd@showadenko.com Y. Matsumura Mail : matsumura.yukihisa.xispc@showadenko.")
5 Technology road map of SiC epitaxial wafer for power device application The following number are based on 6"model Uniformity (n epi 30um (TargetMax or min) / Target Carrier concentration (CC) ±25% ±20% ±15% ±12% ±10% Thickness ±20% ±12% ±10% ±8% ±6% Defect (n epi 30um SD (count/cm 2 : Detected by CS20) Shift to SICA SICA PDD SICA DD BPD (count/cm 2 : caused by process) CC target limit (n epi) Upper limit of CC target Lower limit of CC target CC target limit (p epi) Upper limit of CC target Lower limit of CC target Development items 2E18 5E15 2E18 1E19 2E14 1E19 5E15 p epi n/p multi layer Thick epi 50 CS CS 5E15 Production Production 1E E15 ~250 1E19 [ contact ] H. Kanazawa Mail : kanazawa.hiroshi.xhjhc@showadenko.com M. Shigeto Mail : shigeto.masashi.xhajd@showadenko.com Y. Matsumura Mail : matsumura.yukihisa.xispc@showadenko.com Tel: , Fax: Marketing unit Business unit center SHOWA DENKO K.K.
6 High Grade Epi BPD performance with SICA evaluation 4inch ntype Epi (~10um) 6inch ntype Epi (~10um) High Grade Epi shows excellent BPD performance in SICA evaluation compared with standard model.
7 Thick epi performance High Grade Epi: 4inch ntype (~260um) Thick epi layer sample shows good distribution on layer thickness. CC performance also improved significantly even with 260um of thickness.
8 Carrier life time (upcd) High Grade: 4inch ntype (100um) Around 1μsec of carrier life time is observed by upcd analysis with 100um epi thickness.
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