GND RFC GND. Product Description. Ordering Information. GaAs MESFET Si BiCMOS Si CMOS
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1 RFSW112 Broadband SPDT Switch RFSW112 BROADBAND SPDT SWITCH Package: QFN, 12-Pin, 2mm x 2mm x.55mm GND RF2 GND Features 5MHz to 6MHz Operation 5 or 75 Applications Low Insertion Loss:.3dB at 198MHz High Isolation: 37dB at 2GHz High IP3: >75dBm at 2GHz Compatible with Low Voltage Logic (V HIGH Minimum = 1.3V) No External DC Blocking Capacitors Required on RF Paths Unless DC is Applied Externally 2V HBM ESD Rating on All Ports CTB/CSO: >1dBc (41dBmV/ch., 137 Channels) Applications Cellular BTS CATV, SATV Applications Post PA Switching General Purpose Switching Applications GND RFC GND Product Description GND RF1 GND Functional Block Diagram VDD EN CTRL The RFSW112 is a single-pole double-throw (SPDT) switch designed for applications requiring very low insertion loss and high power handling capability. The excellent linearity performance of the RFSW112 makes it ideal for use in Cellular BTS applications. This switch is ideally suited for use in CATV and SATV applications. The RFSW112 is packaged in a compact 2mm x 2mm x.55mm, 12-pin, QFN package. Ordering Information RFSW112SQ 25-Piece sample bag RFSW112SR 7" Sample reel with 1 pieces RFSW112TR7 7" Reel with 25 pieces RFSW112PCK PCBA with 5-piece sample bag RFSW112PCK PCBA with 5-piece sample bag Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs phemt GaN HEMT GaAs MESFET Si BiCMOS Si CMOS BiFET HBT InGaP HBT SiGe HBT Si BJT SOI RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 212, RF Micro Devices, Inc. DS Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or customerservice@rfmd.com. 1 of 13
2 RFSW112 Absolute Maximum Ratings Parameter Rating Unit Maximum V DD 6. V Maximum EN 3. V Maximum CTRL 3. V Hot-Switching Max Input 2 dbm Power (5 load) Max Input Power 31dBm: 5MHz to 25MHz, 5 load 34dBm: 25MHz to 5MHz, 5 load 37dBm: >5MHz, 5 load 36dBm: >5MHz, 6:1 VSWR dbm Operating Temperature -4 to +85 C (T CASE ) Storage Temperature -4 to +15 C ESD Rating (HBM) Class 2 Moisture Sensitivity Level MSL-2 Parameter Specification Min. Typ. Max. Unit 5 Performance Using SW (A) EVB Operational Frequency Range 5 6 MHz Condition Nominal Test Conditions Unless Otherwise Stated: V DD = 3V, T =, All RF ports terminated in 5 Insertion Loss (RFC to RF1/RF2).25.4 db 915MHz.3.45 db 198MHz.4 db 265MHz.75 db 585MHz Isolation (RFC to RF1/RF2) db 915MHz db 198MHz db 265MHz 21 db 585MHz Isolation (RF1 to RF2) db 915MHz db 198MHz db 265MHz 21 db 585MHz Return Loss (On-State) >15 db 5MHz to 6GHz Input IP3 75 dbm 2.2GHz, 24dBm per tone, 1MHz spacing Input IP2 129 dbm Tone 1: 836.5MHz at +26dBm; Tone 2: 1718MHz at -2dBm; Rx Freq: 881.5MHz 129 dbm Tone 1: 188MHz at +26dBm; Tone 2: 384MHz at -2dBm; Rx Freq: 196MHz Spurious Output <-15 dbm Freq >5MHz, all ports terminated, no RF Inputs <-1 dbm Freq <5MHz, all ports terminated, no RF Inputs 9MHz Second Harmonic dbc P IN = 35dBm 9MHz Third Harmonic dbc 18MHz Second Harmonic dbc P IN = 33dBm 18MHz Third Harmonic dbc Max Operational Input Power 3 dbm 5MHz to 25MHz, 5 load 33 dbm 25MHz to 5MHz, 5 load 36 dbm >5MHz, 5 load 2 of Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or customerservice@rfmd.com. DS1481
3 RFSW112 Parameter Specification Min. Typ. Max. 75 Performance Using SW112-41(A) EVB Operational Frequency Range 5 25 MHz Nominal Test Conditions Unless Otherwise Stated: V DD = 3V, T =, All RF ports terminated in 75 Insertion Loss (RFC to RF1/RF2).15 db 5MHz.2 db 2MHz.3.45 db 915MHz.35.5 db 198MHz.4 22MHz Isolation (RFC to RF1/RF2) 7 db 5MHz 5 db 2MHz 36 db 915MHz 28 db 198MHz 26 db 22MHz Isolation (RF1 to RF2) >7 db 5MHz >7 db 2MHz 48 db 915MHz 34 db 198MHz 32 db 22MHz Return Loss (On-State) >15 db Freq <12MHz >13 db 12MHz < Freq < 25MHz CSO >1 dbc 41dBmV/ch, 137 channels) CTB >1 dbc XMOD >9 dbc Max Operational Input Power 3 dbm 5MHz to 25MHz, 75 load 33 dbm 25MHz to 5MHz, 75 load 36 dbm >5MHz, 75 load Power Supply Device Voltage, V DD V Leakage Current, I DD 1 2 A EN = High 14 2 A EN = Low Control Voltage (EN, CTRL) V.45 V Control Current A CTRL = High, EN = High 1 3 A CTRL = Low, EN = High Switching Speed (T ON, T OFF ) 2 5 s 5% Control to 1/9% RF Unit Condition DS Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or customerservice@rfmd.com. 3 of 13
4 RFSW112 Scenario 1 Power Up Power Down Scenario 2 Power Up Power Down Scenario 3 Switching Ports Power Up / Power Down and Operational Controls Description Sequence for power up and power down from the phone battery or supply that is connected to RFSW112 VBATT Pin. Turn on VBATT (supply), then EN, the CTRL. Then (2 S or greater), apply RF signal Turn off RF signal, then CTRL, then EN, turn off VBATT (supply) Sequence for going in and out of a shutdown mode, keeping the VBATT or supply on, but disabling / enabling the RFSW112 by the EN pin Turn on EN (enable), then CTRL, then (5 S or greater), turn on RF Signal Turn off RF signal, then CTRL, then EN (disable) When changing switch positions between RF1 and RF2, no RF signal should be applied to any RF port while the CTRL is changing states Turn on RF signal, then change CTRL state, then (5 S or greater), turn off RF signal DS Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or customerservice@rfmd.com. 4 of 13
5 RFSW112 Typical Performance: 5 Evaluation Board Insertion Loss versus Frequency Insertion Loss over Temperature (RFC-RF1) Insertion Loss (db) Insertion Loss (db) RFC-RF RFC-RF C Return Loss versus Frequency (On-State) Return Loss over Temperature (RFC) -5 RFC RF1 RF C -1-1 Return Loss (db) Return Loss (db) Isolation versus Frequency Isolation over Temperature (RFC-RF1) Isolation (db) -3-4 Isolation (db) RFC-RF1 RFC-RF2 RF1-RF C DS Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or customerservice@rfmd.com. 5 of 13
6 RFSW112 Typical Performance: 5 Evaluation Board 8 IP3 versus Frequency (24dBm Tones, 1MHz Spacing) 8 IP3 over Temperature (24dBm Tones, 1MHz Spacing) IP3 (dbm) IP3 (dbm) IP3 data is limited by the dynamic range of the test system. RF1 RF IP3 data is limited by the dynamic range of the test system. -4 C Insertion Loss versus Frequency and Power, Insertion Loss versus Power over Temperature, 25MHz Insertin Loss (dbm) MHz 25MHz -.8 5MHz 88MHz MHz 25MHz Input Power (dbm) Insertion Loss (dbm) C Input Power (dbm) EVB THRU Performance, This THRU insertion loss has been deembedded from the SW112 plots and tabular data Insertion Loss (db) Return Loss (db) IL RL of Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or customerservice@rfmd.com. DS1481
7 RFSW112 Typical Performance: 75 Evaluation Board. Insertion Loss versus Frequency. Insertion Loss over Temperature (RFC-RF1) Insertion Loss (db) Insertion Loss (db) RFC-RF RFC-RF C Return Loss versus Frequency (On State) Return Loss over Temperature (RFC) -5 RFC RF1 RF C -1-1 Return Loss (db) Return Loss (db) Isolation versus Frequency Isolation versus Temperature (RFC-RF1) Isolation (db) -3-4 Isolation (db) RFC-RF1 RFC-RF2 RF1-RF C DS Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or customerservice@rfmd.com. 7 of 13
8 RFSW112 Typical Performance: 75 Evaluation Board 115 CTB versus Temperature (3V, 137 Ch., 41dBmV) 115 CSO Upper versus Frequency (3V, 137 Ch., 41dBmV) CTB (dbc) CSO Upper (dbc) C 9-4 C CSO Lower versus Frequency (3V, 137 Ch., 41dBmV). -.2 EVB THRU Performance, IL RL CSO Lower (dbc) Insertion Loss (db) This THRU insertion loss has been deembedded from the SW112 plots and tabular data Return Loss (db) 9-4 C of Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or customerservice@rfmd.com. DS1481
9 RFSW112 Evaluation Board Schematic Description Evaluation Board Bill of Materials (BOM) Reference Designator Manufacturer Manufacturer s P/N 5Ω PCB, SW SW (A) CAP, 1pF, 1%, 25V, X7R, 42 C1 Murata Electronics GRM155R71E13KA1D CAP, 1pF, 5%, 5V, CG, 42 C2-C3 Taiyo Yuden (USA), Inc. RM UMK15CG11JV-F CONN, SMA, END LNCH, MINI, FLT,.68" J1-J3 Emerson Network Power CONN, HDR, ST, PLRZD, 5-PIN,.1" P1 ITW Pancon MPSS1-5-C SPDT MMIC Switch U1 RFMD For 75Ω applications use the following PCB and RF connector: 75Ω PCB, SW SW112-41(A) CONN, F, FEM EDGE MOUNT, 75Ω,.68" J1- J3 Millimeter Wave Technologies MW-846-C-DD-75 DS Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or customerservice@rfmd.com. 9 of 13
10 RFSW112 5 Evaluation Board Assembly Drawing 75 Evaluation Board Assembly Drawing 1 of Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or customerservice@rfmd.com. DS1481
11 RFSW112 Control Logic for Valid Operational States State V DD CTRL EN RF Path 1 2.7V to 4.6V V HIGH V HIGH ANT-RF V to 4.6V V LOW V HIGH ANT-RF1 Shutdown 2.7V to 4.6V Don t Care V LOW Shutdown Pin Names and Descriptions Pin Name Description 1 GND No-connect internal, recommend GND at the EVB level. 2 RFC Single-ended RF port. 3 GND No-connect internal, recommend GND at the EVB level. 4 GND Ground. 5 RF1 Single-ended RF port. 6 GND Ground. 7 CTRL Switch logic control input. 8 EN Shutdown logic control input. 9 VDD Supply voltage. 1 GND Ground. 11 RF2 Single-ended RF port. 12 GND Ground. EPAD GND Ground. Must be soldered to EVB GND over one or more vias. Pin Out DS Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or customerservice@rfmd.com. 11 of 13
12 RFSW112 Package Drawing (Dimensions in millimeters) 12 of Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or DS1481
13 RFSW112 Branding Diagram (Dimensions in millimeters) DS Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or 13 of 13
14 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Qorvo: RFSW112 RFSW112TR7 RFSW112SR
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More information50~100MHz. 100~210MHz C2 1nF. Operating Case Temperature -40 to +85 Storage Temperature -55 to +155 Junction Temperature +126 Operating Voltage
0.7~1.4GHz High IIP3 GaAs MMIC with Integrated LO AMP Device Features +31.7 dbm Input IP3 8.8dB Conversion Loss Integrated LO Driver -2 to +2dBm LO drive level Available 3.3V to 5V single voltage MSL 1,
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Features Ideal for 802.11b ISM Applications Single Positive Supply Output Power 27.5 dbm 57% Typical Power Added Efficiency Downset MSOP-8 Package Description M/A-COM s is a 0.5 W, GaAs MMIC, power amplifier
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com HMC148* Product Page Quick Links Last Content Update: 11/1/216 Comparable
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Features Functional Block Diagram Low conversion loss High isolation Wide IF bandwidth Passive double balanced topology Pb-free RoHs compliant 3x3 mm SMT package Description The CMD179C3 is a general purpose
More informationCMD180C GHz Fundamental Mixer. Features. Functional Block Diagram. Description
CMD18C3 2-32 GHz Fundamental Mixer Features Functional Block Diagram Low conversion loss High isolation Wide IF bandwidth Passive double balanced topology Pb-free RoHs compliant 3x3 mm SMT package Description
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Features Functional Block Diagram Low conversion loss High IP3 Image rejection: 3 db Wide IF bandwidth Pb-free RoHs compliant 4x4 mm SMT package Description The is a high IP3 I/Q mixer in a leadless surface
More informationParameter LO RF IF Min Typ Max Diode Option (GHz) (GHz) (GHz) LO drive level (dbm)
MM-726HSM The MM-726HSM is a passive GaAs double balanced MMIC mixer suitable for both up and down-conversion applications. As with all Marki Microwave mixers, it features excellent conversion loss, isolation
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AMMP-5 1 to GHz GaAs MMIC Sub-Harmonic Mixer In SMT Package Data Sheet Description Avago s AMMP-5 is an easy-to-use broadband subharmonic mixer, with the injected at half of the frequency of that required
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TGP219-SM Product Description The Qorvo TGP219-SM is a packaged 6-bit digital phase shifter fabricated on Qorvo s high performance.15μm GaAs phemt process. It operates over 8 to 12 GHz and provides 36
More informationFeatures. = +25 C, LO = 0 dbm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V *
Typical Applications The is Ideal for: Cellular/3G & LTE/WiMAX/4G Basestations & Repeaters GSM, CDMA & OFDM Transmitters and Receivers Features High Input IP3: +38 dbm 8 db Conversion Loss @ 0 dbm LO Optimized
More informationProduct Specification PE613010
Product Description The is an SPST tuning control switch based on Peregrine s UltraCMOS technology. This highly versatile switch supports a wide variety of tuning circuit topologies with emphasis on impedance
More informationFeatures OBSOLETE. = +25 C, As a Function of LO Drive. LO = +13 dbm IF = 70 MHz
Typical Applications Functional Diagram The HMC28AMS8 / HMC28AMS8E is ideal for: Base Stations PCMCIA Transceivers Cable Modems Portable Wireless Features Ultra Small Package: MSOP8 Conversion Loss: db
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More informationOBSOLETE HMC215LP4 / 215LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram
v1.111 LO AMPLIFIER, 1.7-4. GHz Typical Applications The HMC215LP4 / HMC215LP4E is ideal for Wireless Infrastructure Applications: PCS / 3G Infrastructure Base Stations & Repeaters WiMAX & WiBro ISM &
More informationFeatures. = +25 C, IF = 100 MHz, LO = 0 dbm, Vcc1, 2, 3, = +5V, G_Bias = +3.5V*
v3.1 LO AMPLIFIER, 7 - MHz Typical Applications The HMC684LP4(E) is Ideal for: Cellular/3G & LTE/WiMAX/4G Basestations & Repeaters GSM, CDMA & OFDM Transmitters and Receivers Features High Input IP3: +32
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Product Description The is a high linearity, ultra-low noise gain block amplifier in a small 2x2 mm surface-mount package. At 2332 MHz, the amplifier typically provides +36 dbm OIP3. The amplifier does
More information* Notices. Operating Case Temperature -40 to +85 Storage Temperature -55 to +155 Junction Temperature +126 Operating Voltage.
1.7~2.7GHz High IIP3 GaAs MMIC with Integrated LO AMP Device Features +33.9 dbm Input IP3 8.3dB Conversion Loss Integrated LO Driver -2 to +4dBm LO drive level Available 3.3V to 5V single voltage MSL 1,
More informationParameter Min. Typ. Max. Min. Typ. Max. Units
v1.214 HMC163LP3E Typical Applications The HMC163LP3E is ideal for: Point-to-Point and Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Sensors Functional Diagram Features
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v2.514 Typical Applications The is suitable for: Clock Generation Applications: SONET OC-192 & SDH STM-64 Point-to-Point & VSAT Radios Test Instrumentation Military & Space Functional Diagram Features
More informationFeatures. = +25 C, Vs = 5V, Vpd = 5V
v1.117 HMC326MS8G / 326MS8GE AMPLIFIER, 3. - 4. GHz Typical Applications The HMC326MS8G / HMC326MS8GE is ideal for: Microwave Radios Broadband Radio Systems Wireless Local Loop Driver Amplifier Functional
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Page 1 The is a highly linear passive GaAs double balanced MMIC mixer suitable for both up and down-conversion applications. As with all Marki Microwave mixers, it features excellent conversion loss, isolation
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More informationFeatures. = +25 C, 50 Ohm System
v.211 18 Analog Phase Shifter, 2-2 GHz Typical Applications The is ideal for: EW Receivers Military Radar Test Equipment Satellite Communications Beam Forming Modules Features Wide Bandwidth: 2-2 GHz 18
More informationOBSOLETE HMC423MS8 / 423MS8E MIXERS - DBL-BAL - SMT. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications.
Typical Applications The HMC423MS8 / HMC423MS8E is ideal for: Base Stations Portable Wireless CATV/DBS ISM Functional Diagram Electrical Specifications, T A = +25 C Features Integrated LO Amplifi er w/
More informationFeatures. = +25 C, As a Function of LO Drive
Typical Applications v.411 The is ideal for: Basestations, Repeaters & Access Points WiMAX, WiBro & Fixed Wireless Portables & Subscribers PLMR, Public Safety & Telematics Functional Diagram Features Passive
More informationFeatures. = +25 C, IF= 100 MHz, LO= +13 dbm* Parameter Min. Typ. Max. Min. Typ. Max. Units
Features Passive Double Balanced Topology High LO/RF Isolation: 48 db Low Conversion Loss: 7 db Wide IF Bandwidth: DC - GHz Robust 1,000V esd, Class 1C Typical Applications The is ideal for: Point-to-Point
More informationFeatures. = +25 C, IF = 0.5 GHz, LO = +15 dbm* Parameter Min. Typ. Max. Min. Typ. Max. Units
v1.514 Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use Functional Diagram Features Passive: No DC Bias Required
More informationHMC219AMS8 / 219AMS8E. Features OBSOLETE. = +25 C, As a Function of LO Drive. LO = +13 dbm IF = 100 MHz
Typical Applications The HMC219AMS8 / HMC219AMS8E is ideal for: UNII & HiperLAN ISM Microwave Radios Functional Diagram Features Ultra Small Package: MSOP8 Conversion Loss: 8.5 db LO / RF Isolation: 25
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Page 1 The is a passive GaAs double balanced MMIC mixer suitable for both up and down-conversion applications. As with all Marki Microwave mixers, it features excellent conversion loss, isolation and spurious
More informationTypical Performance 1
Device Features Internally matched to 50 ohms Operated at 3.0V and 5.0V 37.5 dbm Output IP3 at 0dBm/tone at 700MHz 22.5dB Gain at 700MHz 21.1dBm P1dB at 700 MHz 0.40 db NF at 700MHz on evaluation board
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Typical Applications The Hmc86LC is ideal for: Point-to-Point and Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Functional Diagram Features Electrical Specifications, T
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