TGC2510-SM. Ku-Band Upconverter. Product Description. Product Features. Function Block Diagram. Ordering Information. Applications
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- Eleanore Logan
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1 TGC21-SM Product Description The QORVO TGC21-SM is a Ku-Band image reject upconverter with integrated LO buffer amplifier and output variable gain amplifier. The TGC21-SM operates from an RF of 1 to 16 GHz and LO from 6. to 19 GHz with IF inputs from DC to 3.GHz and is designed using QORVO s 3MI DR.1 um phemt production process. The TGC21-SM typically provides 33 dbm of output TOI at 1 dbm input power per tone and has a conversion gain of 17 db. The TGC21-SM is available in a low-cost, surface mount 28 lead xmm QFN package and is ideally suited for Pointto-Point Radio, and Ku-Band VSAT Ground Terminal. 28-pin x mm QFN package Product Features RF Frequency Range: 1-16 GHz IF Frequency: DC LO Frequency: GHz LO Input Power: to 6 dbm Conversion Gain: 17 db OTOI: 33 dbm at max gain Attenuation Range: 1 db typical Package Dimensions:. x. x 1.3 mm Function Block Diagram Ordering Information Part No. TGC21-SM TGC21-SMEVBLL TGC21-SMEVBLH TGC21-SMEVBUL TGC21-SMEVBUH Description Ku-Band Upconverter TGC21-SM EVB LSB, Low IF Band, 1.3 to 2.4 GHz TGC21-SM EVB LSB, High IF Band, 2. to 4. GH TGC21-SM EVB USB, Low IF Band, 1.3 to 2.4 GHz TGC21-SM EVB USB, High IF Band, 2. to 4. GHz Applications VSAT Point-to-Point Radio Test Equipment & Sensors Data Sheet Rev I. August 6, 218 Subject to change without notice 1 of 23
2 TGC21-SM Absolute Maximum Ratings Parameter VDRF VDLO IDRF IDLO VREF VGRF, VGLO, VGX VCTRL IF1, IF2 IF Input Power, Ω, T = 2 C Channel Temperature, Tch Storage Temperature Rating 6 V 6 V 3 ma 1 ma 3 V -2 to +1. V 3 V -2 to +2 V 1 dbm 2 C -6 to 12 C Recommended Operating Conditions Parameter Min Typ Max Units Operating Temp. Range C VDRF V IDRF 24 ma VGRF -.7 V VDLO V IDLO 6 ma VGLO -.63 V VREF 2 V VGX -1.2 V VCTRL V LO Input Power 6 dbm These are stress ratings only, functional operation of the device at these conditions is not implied. Extended application of Absolute Maximum Rating conditions may reduce device reliability. Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: IF Input Power = -1 dbm, VGX = -1.2 V, VREF = 2 V, VDLO = V, IDLO = 6 ma, VDRF = V, IDRF = 24 ma. VCTRL = V for maximum gain. Parameter Conditions Min Typ Max Units RF Frequency Range 1 16 GHz LO Frequency Range GHz IF Frequency Range DC LO Input Power 6 dbm Conversion Gain IF=2GHz 1 17 dbm Third Order Output Intercept Point, OIP3 RF = 1 to 11.7GHz, IF=2GHz dbm Third Order Output Intercept Point, OIP3 RF = 12.7 to 1.4GHz, IF=2GHz dbm Image Rejection 2 db P1dB Output Power 22 dbm Data Sheet Rev I. August 6, 218 Subject to change without notice 2 of 23
3 TGC21-SM Thermal and Reliability Information Parameter Conditions Rating Thermal Resistance, θjc, measured to back of package Tbase = 8 C θjc = 26.1 C/W Channel Temperature (Tch), and Median Lifetime (Tm) Channel Temperature (Tch), and Median Lifetime (Tm) Under RF Drive Tbase = 8 C, VDRF = V, IDRF = 24 ma VDLO = V, IDLO = 6 ma Pdiss = 1. W Tbase = 8 C VDRF = V, IDRF = 24 ma VDLO = V, IDLO = 8 ma Pin = -1 dbm Pdiss = 1.63 W Tch = 124 C Tm = 2.3 E+7 Hours Tch = 128 C Tm = 1.4 E+7 Hours Data Sheet Rev I. August 6, 218 Subject to change without notice 3 of 23
4 Conversion Gain (db) Conversion Gain (db) Conversion Gain (db) Conversion Gain (db) Conversion Gain (db) Conversion Gain (db) TGC21-SM Performance Plots IF Input Power = -1 dbm, VDLO = V, IDLO = 6 ma, VDRF = V, IDRF = 24 ma. VGX = -1.2 V, VREF = 2 V. 2 Conversion Gain vs. RF vs. IF Vcontrol = V, LO = dbm, LSB, 2 C 2 Conversion Gain vs. RF vs. IF Vcontrol = V, LO = dbm, USB, 2 C GHz 2. GHz 3. GHz 1 1. GHz 2. GHz 3. GHz 2 Conversion Gain vs. RF vs. IF Vcontrol = V, LO = 6 dbm, LSB, 2 C 2 Conversion Gain vs. RF vs. IF Vcontrol = V, LO = 6 dbm, USB, 2 C GHz 2. GHz 3. GHz 1 1. GHz 2. GHz 3. GHz Conversion Gain vs. RF vs. IF Vcontrol = 2 V, LO = dbm, LSB, 2 C Conversion Gain vs. RF vs. IF Vcontrol = 2 V, LO = dbm, USB, 2 C GHz 2. GHz 3. GHz GHz 2. GHz 3. GHz -2 Data Sheet Rev I. August 6, 218 Subject to change without notice 4 of 23
5 Image Rejection Ratio (db) Image Rejection Ratio (db) Image Rejection Ratio (db) Image Rejection Ratio (db) Conversion Gain (db) Conversion Gain (db) TGC21-SM Performance Plots IF Input Power = -1 dbm, VDLO = V, IDLO = 6 ma, VDRF = V, IDRF = 24 ma, VGX = -1.2 V, VREF = 2 V. Conversion Gain vs. RF vs. IF Vcontrol = 2 V, LO = 6 dbm, LSB, 2 C Conversion Gain vs. RF vs. IF Vcontrol = 2 V, LO = 6 dbm, USB, 2 C GHz 2. GHz 3. GHz GHz 2. GHz 3. GHz -2-2 IMR vs. RF Output and IF Input Vcontrol = V, LO = dbm, LSB, 2 C IMR vs. RF Output and IF Input Vcontrol = V, LO = dbm, USB, 2 C GHz 2. GHz 1 3. GHz 2 1. GHz 2. GHz 1 3. GHz IMR vs. RF Output and IF Input Vcontrol = V, LO = 6 dbm, LSB, 2 C IMR vs. RF Output and IF Input Vcontrol = V, LO = 6 dbm, USB, 2 C GHz 1 2. GHz 3. GHz 2 1. GHz 1 2. GHz 3. GHz Data Sheet Rev I. August 6, 218 Subject to change without notice of 23
6 Image Rejection Ratio (db) Image Rejection Ratio (db) Image Rejection Ratio (db) Image Rejection Ratio (db) TGC21-SM Performance Plots IF Input Power = -1 dbm, VDLO = V, IDLO = 6 ma, VDRF = V, IDRF = 24 ma, VGX = -1.2 V, VREF = 2 V. 4 3 IMR vs. RF Output and IF Input Vcontrol = 2 V, LO = dbm, LSB, 2 C 4 3 IMR vs. RF Output and IF Input Vcontrol = 2 V, LO = dbm, USB, 2 C 1. GHz 2. GHz 3. GHz 2 1. GHz 2. GHz 1 3. GHz 2 1 IMR vs. RF Output and IF Input Vcontrol = 2 V, LO = 6 dbm, LSB, 2 C IMR vs. RF Output and IF Input Vcontrol = 2 V, LO = 6 dbm, USB, 2 C GHz 2. GHz 3. GHz 2 1. GHz 1 2. GHz 3. GHz 2 1 Data Sheet Rev I. August 6, 218 Subject to change without notice 6 of 23
7 OIP3 (dbm) OIP3 (dbm) OIP3 (dbm) OIP3 (dbm) TGC21-SM Performance Plots IF Input Power = -1 dbm, VDLO = V, IDLO = 6 ma, VDRF = V, IDRF = 24 ma, VGX = -1.2 V, VREF = 2 V OIP3 vs. RF Output and IF Input Vcontrol = V, LO = dbm, LSB, 2 C 1. GHz 2. GHz 3. GHz OIP3 vs. RF Output and IF Input Vcontrol = V, LO = dbm, USB, 2 C 1. GHz 2. GHz 3. GHz OIP3 vs. RF Output and IF Input Vcontrol = V, LO = 6 dbm, LSB, 2 C 1. GHz 2. GHz 3. GHz OIP3 vs. RF Output and IF Input Vcontrol = V, LO = 6 dbm, USB, 2 C 1. GHz 2. GHz 3. GHz Data Sheet Rev I. August 6, 218 Subject to change without notice 7 of 23
8 Isolation (db) Isolation (db) OIP3 (dbm) OIP3 (dbm) OIP3 (dbm) OIP3 (dbm) TGC21-SM Performance Plots IF Input Power = -1 dbm, VDLO = V, IDLO = 6 ma, VDRF = V, IDRF = 24 ma, VGX = -1.2 V, VREF = 2 V OIP3 vs. RF Output and IF Input Vcontrol = 2 V, LO = dbm, LSB, 2 C 1 1. GHz 1 2. GHz 3. GHz OIP3 vs. RF Output and IF Input Vcontrol = 2 V, LO = dbm, USB, 2 C 1 1. GHz 1 2. GHz 3. GHz OIP3 vs. RF Output and IF Input Vcontrol = 2 V, LO = 6 dbm, LSB, 2 C 1 1. GHz 1 2. GHz 3. GHz OIP3 vs. RF Output and IF Input Vcontrol = 2 V, LO = 6 dbm, USB, 2 C 1 1. GHz 1 2. GHz 3. GHz L-I Isolation vs. LO Frequency Vcontrol = V, LSB, 2 C L-I Isolation vs. LO Frequency Vcontrol = V, USB, 2 C LO = dbm LO = 6 dbm 3 2 LO = dbm LO = 6 dbm 1 1 Data Sheet Rev I. August 6, 218 Subject to change without notice 8 of 23
9 Isolation (db) Isolation (db) Isolation (db) Isolation (dbm) Isolation (db) Isolation (db) TGC21-SM Performance Plots IF Input Power = -1 dbm, VDLO = V, IDLO = 6 ma, VDRF = V, IDRF = 24 ma, VGX = -1.2 V, VREF = 2 V. L-I Isolation vs. LO Frequency Vcontrol = 2 V, LSB, 2 C L-I Isolation vs. LO Frequency Vcontrol = 2 V, USB, 2 C LO = dbm LO = 6 dbm 3 2 LO = dbm LO = 6 dbm 1 1 L-R Isolation vs. LO Frequency Vcontrol = V, LSB, 2 C L-R Isolation vs. LO Frequency Vcontrol = V, USB, 2 C 4 3 LO = dbm LO = 6 dbm 4 3 LO = dbm LO = 6 dbm L-R Isolation vs. LO Frequency Vcontrol = 2 V, LSB, 2 C L-R Isolation vs. LO Frequency Vcontrol = 2 V, USB, 2 C LO = dbm LO = 6 dbm 3 2 LO = dbm LO = 6 dbm 1 1 Data Sheet Rev I. August 6, 218 Subject to change without notice 9 of 23
10 Isolation (db) Isolation (db) Isolation (db) Isolation (db) Isolation (db) TGC21-SM Performance Plots IF Input Power = -1 dbm, VDLO = V, IDLO = 6 ma, VDRF = V, IDRF = 24 ma, VGX = -1.2 V, VREF = 2 V I to R Isolation vs. LO vs. IF Vcontrol = V, LO = dbm, LSB, 2 C 1. GHz 2. GHz 3. GHz I to R Isolation vs. LO vs. IF Vcontrol = V, LO = dbm, USB, 2 C 1. GHz 2. GHz 3. GHz I to R Isolation vs. LO vs. IF Vcontrol = V, LO = 6 dbm, LSB, 2 C 1. GHz 2. GHz 3. GHz I to R Isolation vs. LO vs. IF Vcontrol = V, LO = 6 dbm, USB, 2 C 1. GHz 2. GHz 3. GHz I to R Isolation vs. LO vs. IF Vcontrol = 2 V, LO = dbm, LSB, 2 C 1. GHz 2. GHz 3. GHz Data Sheet Rev I. August 6, 218 Subject to change without notice 1 of 23
11 Input 1dB Compression (dbm) Input 1dB Compression (dbm) Input 1dB Compression (dbm) Input 1dB Compression (dbm) Isolation (db) Isolation (db) TGC21-SM Performance Plots IF Input Power = -1 dbm, VDLO = V, IDLO = 6 ma, VDRF = V, IDRF = 24 ma, VGX = -1.2 V, VREF = 2 V I to R Isolation vs. LO vs. IF Vcontrol = 2 V, LO = 6 dbm, LSB, 2 C 1. GHz 2. GHz 3. GHz I to R Isolation vs. LO vs. IF Vcontrol = 2 V, LO = 6 dbm, USB, 2 C 1. GHz 2. GHz 3. GHz 1 Input 1dB Compression vs. RF Output Vcontrol = V, LO = dbm, LSB, 2 C 1 Input 1dB Compression vs. RF Output Vcontrol = V, LO = dbm, USB, 2 C GHz 2. GHz 3. GHz - 1. GHz 2. GHz 3. GHz - 1 Input 1dB Compression vs. RF Output Vcontrol = V, LO = 6 dbm, LSB, 2 C 1 Input 1dB Compression vs. RF Output Vcontrol = V, LO = 6 dbm, USB, 2 C GHz 2. GHz 3. GHz - 1. GHz 2. GHz 3. GHz - Data Sheet Rev I. August 6, 218 Subject to change without notice 11 of 23
12 Voltage (V) Voltage (V) Input 1dB Compression (dbm) Input 1dB Compression (dbm) Input 1dB Compression (dbm) Input 1dB Compression (dbm) TGC21-SM Performance Plots IF Input Power = -1 dbm, VDLO = V, IDLO = 6 ma, VDRF = V, IDRF = 24 ma, VGX = -1.2 V, VREF = 2 V. 1 Input 1dB Compression vs. RF Output Vcontrol = 2 V, LO = dbm, LSB, 2 C 1 Input 1dB Compression vs. RF Output Vcontrol = 2 V, LO = dbm, USB, 2 C GHz 2. GHz 3. GHz 1. GHz 2. GHz 3. GHz Input 1dB Compression vs. RF Output Vcontrol = 2 V, LO = 6 dbm, LSB, 2 C 1 Input 1dB Compression vs. RF Output Vcontrol = 2 V, LO = 6 dbm, USB, 2 C GHz 2. GHz 3. GHz 1. GHz 2. GHz 3. GHz Nulling Voltages vs. LO Frequency LO at 3 dbm, IF = 2. GHz, USB, 2 C VDI_Min Gain VDI_Max Gain VDQ_Min Gain VDQ_Max gain Nulling Voltages vs. LO Frequency LO at 3 dbm, IF =, USB, 2 C VDI_Min Gain VDI_Max Gain VDQ_Min Gain VDQ_Max gain Data Sheet Rev I. August 6, 218 Subject to change without notice 12 of 23
13 OIP3 (dbm) OIP3 (dbm) Conversion Gain (db) Conversion Gain (db) Conversion Gain (db) Conversion Gain (db) TGC21-SM Performance Plots IF Input Power = -1 dbm, VDLO = V, IDLO = 6 ma, VDRF = V, IDRF = 24 ma, VGX = -1.2 V, VREF = 2 V. 2 2 Conversion Gain vs. RF vs. Temperature Vcontrol = V, LO = dbm, LSB IF = 2. GHz 2 2 Conversion Gain vs. RF vs. Temperature Vcontrol = V, LO = dbm, USB 2. GHz C 2 C -4 C 1 8 C 2 C -4 C 2 Conversion Gain vs. RF vs. Temperature Vcontrol = V, LO = dbm, LSB IF = 2 Conversion Gain vs. RF vs. Temperature Vcontrol = V, LO = dbm, USB C 2 C -4 C 1 8 C 2 C -4 C OIP3 vs. RF Output vs. Temperature Vcontrol = V, LO = 6 dbm, LSB IF = 2. GHz OIP3 vs. RF Output vs. Temperature Vcontrol = V, LO = 6 dbm, USB 2. GHz C 2 C -4 C C 2 C -4 C Data Sheet Rev I. August 6, 218 Subject to change without notice 13 of 23
14 Image Rejection Ratio (db) Image Rejection Ratio (db) Image Rejection Ratio (db) Image Rejection Ratio (db) OIP3 (dbm) OIP3 (dbm) TGC21-SM Performance Plots IF Input Power = -1 dbm, VDLO = V, IDLO = 6 ma, VDRF = V, IDRF = 24 ma, VGX = -1.2 V, VREF = 2 V. OIP3 vs. RF Output vs. Temperature Vcontrol = V, LO = 6 dbm, LSB IF = OIP3 vs. RF Output vs. Temperature Vcontrol = V, LO = 6 dbm, USB C 2 C -4 C C 2 C -4 C 4 IMR vs. RF Output vs. Temperature Vcontrol = V, LO = dbm, LSB IF = 2. GHz 4 IMR vs. RF Output vs. Temperature Vcontrol = V, LO = dbm, USB 2. GHz C 2 C -4 C 2 8 C 1 2 C -4 C IMR vs. RF Output vs. Temperature Vcontrol = V, LO = dbm, LSB IF = IMR vs. RF Output vs. Temperature Vcontrol = V, LO = dbm, USB C 2 C -4 C C 2 C -4 C Data Sheet Rev I. August 6, 218 Subject to change without notice 14 of 23
15 TGC21-SM Mixing Products IF Input Power = -1 dbm, VDLO = V, IDLO = 6 ma, VDRF = V, IDRF = 24 ma. VGX = -1.2 V, VREF = 2 V. M x N Spurious Outputs for LSB LO = 6 dbm, 2 C; All values are in dbc. For LSB IF = 2. GHz: LO = 12. GHz to 18. GHz; IF = : LO = 1 to 19. GHz. Spurious Suppresion (dbc) for IF = 2. GHz RF/LO Spurious Suppresion (dbc) for IF = RF/LO M x N Spurious Outputs for USB LO = 6 dbm, 2 C; All values are in dbc. For USB IF = 2. GHz: LO = 8. GHz to 14. GHz; IF = : LO = 6. GHz to 12. GHz. Spurious Suppresion (dbc) for IF = 2. GHz RF/LO Spurious Suppresion (dbc) for IF = RF/LO Data Sheet Rev I. August 6, 218 Subject to change without notice 1 of 23
16 TGC21-SM Pin Configuration and Description Pin No. Label Description 1, 7, 8, 9, 13, 14, 1, 16, 21, 22, 26, 28 GND Internal Grounding; must be grounded on PCB. 2 RF OUT RF Output matched to ohms, AC Coupled. 3, 11, 18, 19, 2 NC No internal connection; must be grounded on PCB. 4 VCTRL VREF 6 VGRF Control Voltage. Bias network is required; see Application Circuit on page 17 as an example. Reference Voltage. Bias network is required; see Application Circuit on page 17 as an example. RF Gate Voltage. Bias network is required; see Application Circuit on page 17 as an example. 1 IF1 IF Input matched to ohms, DC coupled. 12 IF2 IF Input matched to ohms, DC coupled. 17 LO IN LO Input, matched to ohms, AC coupled. 23 VGLO 24 VDLO 2 VGX 27 VDRF 29 GND LO Gate Voltage. Bias network is required; see Application Circuit on page 17 as an example. LO Drain Voltage. Bias network is required; see Application Circuit on page 17 as an example. Mixer Voltage. Bias network is required; see Application Circuit on page 17 as an example. RF Drain Voltage. Bias network is required; see Application Circuit on page 17 as an example. Backside Paddle. Multiple vias should be employed to minimize inductance and thermal resistance; see Mounting Configuration on page 2 for suggested footprint. Data Sheet Rev I. August 6, 218 Subject to change without notice 16 of 23
17 TGC21-SM Applications Circuit Bias-up Procedure Set VGX = -1.2 V, Set VREF = 2. V, Set VCTRL = V Set VGLO = -1. V, Set VDLO =. V Set VGX, VREF, VCTRL, VGLO, VGRF, VDI, VDQ current limits to 1 ma Set IDLO limit to 1 ma, Set IDRF limit to 3 ma Increase VGLO to get IDLO = 6 ma Set VGRF = -1. V, Set VDRF =. V Increase VGRF to get IDRF = 24 ma Set VDI, VDQ to V; or no connection Apply LO and RF signals Bias-down Procedure Turn off RF and LO signals Reduced VDLO = V Reduce VDRF = V Set VDI = V, if used for LO nulling Set VDQ = V, if used for LO nulling Reduced VGLO = V, VGRF = V, VREF = V Reduce VCTRL = V Reduced VGX = V Data Sheet Rev I. August 6, 218 Subject to change without notice 17 of 23
18 TGC21-SM Evaluation Board (EVB) Assembly Layout Board material is RO43.8 thickness with ½ oz copper cladding. Data Sheet Rev I. August 6, 218 Subject to change without notice 18 of 23
19 TGC21-SM Application Circuit Component Bill of Material Ref Des Value Description Manufacturer Part Number C1 C2 1 pf Cap, 42, V, %, NPO various C3 - C, C7, C13 - C1 1 pf Cap, 42, V, %, NPO various C1 C12, C6, C8, C9 1 µf Cap, 8, 2V, %, XR various L1 L4 27 nh Ind, 21, 1 ma, %, SMD various Q1 Ku-Band Up-Converter QORVO TGC21-SM LSB Configuration Ref Des Value Description Manufacturer Part Number X1 IF Quad Coupler, 1.3 to 2.4 GHz Mini-Circuits QCN-2+ X1 IF Quad Coupler, 2. to 4. GHz Mini-Circuits QCN-4+ R1 Ω Res, 42,.1W, SMD various R4 Ω Res, 42,.W,.1%, SMD various R2, R3 DNP USB Configuration Ref Des Value Description Manufacturer Part Number X1 IF Quad Coupler, 1.3 to 2.4 GHz Mini-Circuits QCN-2+ X1 IF Quad Coupler, 2. to 4. GHz Mini-Circuits QCN-4+ R3 Ω Res, 42,.1W, SMD various R2 Ω Res, 42,.W,.1%, SMD various R1, R4 DNP Note: Due to bandwidth limitations of IF quad coupler, two versions of coupler were used on EVBs, users need to choose low or high band of IF to be used, in addition to LSB and USB selection. Refer to ordering information section for details. Data Sheet Rev I. August 6, 218 Subject to change without notice 19 of 23
20 TGC21-SM Package Marking and Dimensions The TGC21-SM will be marked with the 21 designator. The YY represents the last two digits of the year the part was manufactured, the WW is the work week, and the XXXX is batch ID. This package is lead-free/rohs-compliant with a copper alloy base (CDA194), and the plating material on the leads is NiPdAu. It is compatible with a lead-free (maximum 26 C reflow temperature) soldering process. PCB Mounting Pattern Notes: 1. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a.3mm diameter drill and have a final plated thru diameter of.2 mm. Data Sheet Rev I. August 6, 218 Subject to change without notice 2 of 23
21 TGC21-SM Tape and Reel Information Standard T/R size = pieces on a 7 reel. Vendor Tek-Pak Material Vendor P/N QFNX F-L Length (A) Cavity (mm) Width (B) Depth (K) Pitch (P1) Distance Between Centerline (mm) Length Width direction Direction (P2) (F) Carrier Tape (mm) Width (W) Cover Carrier (mm) Width (W) Data Sheet Rev I. August 6, 218 Subject to change without notice 21 of 23
22 TGC21-SM Solderability Compatible with both lead-free (26 C max. reflow temp.) and tin/lead (24 C max. reflow temp.) soldering processes. Solder profiles available upon request. Recommended Soldering Temperature Profile Data Sheet Rev I. August 6, 218 Subject to change without notice 22 of 23
23 TGC21-SM Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) Class ESDA / JEDEC JS MSL Moisture Sensitivity Level Level 1 IPC/JEDEC J-STD-2 Caution! ESD-Sensitive Device RoHS Compliance This product is compliant with the 211/6/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances Electrical and Electronic Equipment), as amended by Directive 21/863/EU. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C1H12Br42) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Tel: Web: customer.support@qorvo.com For technical questions and application information: appsupport@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained here and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo produc The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, license or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TH INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORV HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED B LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIE WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medic life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe person injury or death. Copyright 218 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Data Sheet Rev I. August 6, 218 Subject to change without notice 23 of 23
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Applications X-band radar Data Links Product Features Frequency Range: 8 11 GHz P SAT : 47 dbm @ PIN = 23 dbm PAE: 34% @ PIN = 23 dbm Power Gain: 24 db @ PIN = 23 dbm Small Signal Gain: >28 db Return Loss:
More informationTGA GHz 30W GaN Power Amplifier
Applications Electronic Warfare Commercial and Military Radar Product Features Functional Block Diagram Frequency Range: 6-12 GHz Output Power: > 45 dbm (PIN = 23 dbm) PAE: > 25 % (PIN = 23 dbm) Large
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Product Overview The is a GaAs phemt single ended RF amplifier IC featuring 25 db of flat gain and low noise. This IC is designed to support Fiber to The Home (FTTH) applications from 47 to 1218 MHz using
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9 Product Overview The is a highly integrated front-end module targeted for TDD base stations. The switch module integrates a two-stage and a high-power switch in a dual channel configuration. Power down
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TGP219 Applications X-Band Radar Satellite Communication Systems Product Features Functional Block Diagram Frequency Range: 8 to 12 GHz 6-Bit Digital Phase Shifter Bi-Directional 36 Coverage, LSB = 5.625
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Applications Receive Chain Protection Commercial and Military Radar Product Features Functional Block Diagram Frequency Range: 30-38 GHz Insertion Loss: < 1 db Peak Power Handling: 1 W Flat Leakage: 20
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Product Overview The is a single-pole four-throw (SP4T) switch designed for static Antenna/impedance tuning applications which requires very low insertion loss and high power handling capability with a
More informationFeatures. Parameter Min. Typ. Max. Units
HMCBLPE v.. -. GHz Typical Applications The HMCBLPE is ideal for: Point-to-Point and Point-to-Multi-Point Radios Military Radar, EW & ELINT Satellite Communications Features Conversion Gain: db Image Rejection:
More informationFeatures. Parameter Min. Typ. Max. Units
Typical Applications The is ideal for: Point-to-Point and Point-to-Multi-Point Radios Military Radar, EW & ELINT Satellite Communications Features Conversion Gain: db Image Rejection: dbc Input Third-Order
More informationSKY LF: GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier
DATA SHEET SKY67105-306LF: 0.6-1.1 GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier Applications GSM, CDMA, WCDMA, cellular infrastructure systems Ultra low-noise, high gain and high linearity
More informationGaAs, MMIC Fundamental Mixer, 2.5 GHz to 7.0 GHz HMC557A
FEATURES Conversion loss: db LO to RF isolation: db LO to IF isolation: 3 db Input third-order intercept (IP3): 1 dbm Input second-order intercept (IP2): dbm LO port return loss: dbm RF port return loss:
More informationFeatures. = +25 C, Vdd = +7V, Idd = 820 ma [1]
Typical Applications The is ideal for use as a power amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Sensors Military End-Use Space Functional Diagram Features Saturated
More information6 GHz to 26 GHz, GaAs MMIC Fundamental Mixer HMC773A
FEATURES Conversion loss: 9 db typical Local oscillator (LO) to radio frequency (RF) isolation: 37 db typical LO to intermediate frequency (IF) isolation: 37 db typical RF to IF isolation: db typical Input
More information10 GHz to 26 GHz, GaAs, MMIC, Double Balanced Mixer HMC260ALC3B
Data Sheet FEATURES Passive; no dc bias required Conversion loss 8 db typical for 1 GHz to 18 GHz 9 db typical for 18 GHz to 26 GHz LO to RF isolation: 4 db Input IP3: 19 dbm typical for 18 GHz to 26 GHz
More information1 Watt High Linearity, High Gain InGaP HBT Amplifier. Product Description
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MAMX-119 Features Up or Down Frequency Mixer Low Conversion Loss: 11 db 2xLO & 3xLO Rejection: db RF Frequency: 14 - LO Frequency: 4-2 GHz IF Frequency: DC - 7 GHz Lead-Free 1.x1.2 mm 6-lead TDFN Package
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PRELIMINARY DATA SHEET SKY67151-396LF: 0.7-3.8 GHz Ultra Low-Noise Amplifier Applications LTE, GSM, WCDMA, TD-SCDMA infrastructure Ultra low-noise, high performance LNAs Cellular repeaters High temperature
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK Typical Applications The is ideal
More informationFeatures. Parameter Min. Typ. Max. Min. Typ. Max. Units
v. DOWNCONVERTER, - GHz Typical Applications The is ideal for: Point-to-Point and Point-to-Multi-Point Radios Military Radar, EW & ELINT Satellite Communications Maritime & Mobile Radios Features Conversion
More information1.5 GHz to 4.5 GHz, GaAs, MMIC, Double Balanced Mixer HMC213BMS8E
FEATURES Passive: no dc bias required Conversion loss: 1 db typical Input IP3: 21 dbm typical RoHS compliant, ultraminiature package: 8-lead MSOP APPLICATIONS Base stations Personal Computer Memory Card
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DATA SHEET SKY65624-682LF: GPS/GLONASS/Galileo/BDS Low-Noise Amplifier Applications GPS/GLONASS/Galileo/BDS radio receivers ENABLE Compass (Beidou) Smartphones Tablet/laptop PCs Enable Personal navigation
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DATA SHEET SKY67180-306LF: 1.5 to 3.8 GHz Two-Stage, High-Gain Low-Noise Amplifier Applications LTE, GSM, WCDMA, HSDPA macro-base and micro-base stations S and C band ultra-low-noise receivers Cellular
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HMCBMSGE v1.1 Typical Applications The HMCBMSGE is ideal for: Long Haul Radio Platforms Microwave Radio VSAT Functional Diagram Features Conversion Loss: db Noise Figure: db LO to RF Isolation: db LO to
More informationOBSOLETE HMC215LP4 / 215LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram
v1.111 LO AMPLIFIER, 1.7-4. GHz Typical Applications The HMC215LP4 / HMC215LP4E is ideal for Wireless Infrastructure Applications: PCS / 3G Infrastructure Base Stations & Repeaters WiMAX & WiBro ISM &
More information50~100MHz. 100~210MHz C2 1nF. Operating Case Temperature -40 to +85 Storage Temperature -55 to +155 Junction Temperature +126 Operating Voltage
0.7~1.4GHz High IIP3 GaAs MMIC with Integrated LO AMP Device Features +31.7 dbm Input IP3 8.8dB Conversion Loss Integrated LO Driver -2 to +2dBm LO drive level Available 3.3V to 5V single voltage MSL 1,
More information* Notices. Operating Case Temperature -40 to +85 Storage Temperature -55 to +155 Junction Temperature +126 Operating Voltage.
1.7~2.7GHz High IIP3 GaAs MMIC with Integrated LO AMP Device Features +33.9 dbm Input IP3 8.3dB Conversion Loss Integrated LO Driver -2 to +4dBm LO drive level Available 3.3V to 5V single voltage MSL 1,
More informationFeatures. = +25 C, LO = 0 dbm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V *
Typical Applications The is Ideal for: Cellular/3G & LTE/WiMAX/4G Basestations & Repeaters GSM, CDMA & OFDM Transmitters and Receivers Features High Input IP3: +38 dbm 8 db Conversion Loss @ 0 dbm LO Optimized
More informationCMD197C GHz Distributed Driver Amplifier
Features Functional Block Diagram Wide bandwidth High linearity Single positive supply voltage On chip bias choke Pb-free RoHs compliant 4x4 mm SMT package Description The CMD197C4 is a wideband GaAs MMIC
More information= +25 C, IF= 100 MHz, LO = +17 dbm*
v3.514 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use Functional Diagram Wide IF Bandwidth: DC - 3.5
More informationFeatures. = +25 C, LO = 0 dbm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V *
Typical Applications The is Ideal for: Cellular/3G & LTE/WiMAX/4G Basestations & Repeaters GSM, CDMA & OFDM Transmitters and Receivers Features High Input IP3: +38 dbm 8 db Conversion Loss @ 0 dbm LO Optimized
More informationGaAs MMIC High Dynamic Range Mixer
Page 1 The is a triple balanced passive diode mixer offering high dynamic range, low conversion loss, and excellent repeatability. As with all T3 mixers, this mixer offers unparalleled nonlinear performance
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Page 1 The is a highly linear passive GaAs double balanced MMIC mixer suitable for both up and down-conversion applications. As with all Marki Microwave mixers, it features excellent conversion loss, isolation
More informationOBSOLETE HMC908LC5 MIXERS - I/Q MIXERS, IRMS & RECEIVERS - SMT. GaAs MMIC I/Q DOWNCONVERTER 9-12 GHz. Typical Applications. Functional Diagram
v3.1 HMC98LC Typical Applications The HMC98LC is ideal for: Point-to-Point and Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Maritime & Mobile Radio Functional Diagram
More informationGaAs MMIC Double Balanced Mixer
Page 1 The is a passive GaAs double balanced MMIC mixer suitable for both up and down-conversion applications. As with all Marki Microwave mixers, it features excellent conversion loss, isolation and spurious
More informationFeatures. = +25 C, Vdd = +4.5V, +4 dbm Drive Level
Typical Applications The is ideal for: Clock Generation Applications: SONET OC-192 & SDH stm-64 Point-to-Point & VSAT Radios Test Instrumentation Military & Space Sensors Features High Output Power: +21
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GaAs MMIC Double Balanced Mixer MM132HSM 1. Device Overview 1.1 General Description The MM132HSM is a GaAs MMIC double balanced mixer that is optimized for high frequency applications. MM1-832HSM is a
More informationFeatures. = +25 C, IF = 0.5 GHz, LO = +15 dbm* Parameter Min. Typ. Max. Min. Typ. Max. Units
v1.514 Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use Functional Diagram Features Passive: No DC Bias Required
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Features Functional Block Diagram Low conversion loss High IP3 Image rejection: 3 db Wide IF bandwidth Pb-free RoHs compliant 4x4 mm SMT package Description The is a high IP3 I/Q mixer in a leadless surface
More information4W High Linearity InGaP HBT Amplifier. Product Description
AH42 Product Features 4 27 MHz +3.7 dbm P1dB -49 dbc ACLR @ 26 dbm db Gain @ 2 MHz 8 ma Quiescent Current + V Single Supply MTTF > 1 Years Lead-free/green/RoHS-compliant 12-pin 4xmm DFN Package Applications
More informationFeatures OBSOLETE. = +25 C, IF = 1.45 GHz, LO = +13 dbm [1]
v2.614 Typical Applications The HMC412AMS8G / HMC412AMS8GE is ideal for: Long Haul Radio Platforms Microwave Radio VSAT Functional Diagram Features General Description Parameter Min. Typ. Max. Units Frequency
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com HMC148* Product Page Quick Links Last Content Update: 11/1/216 Comparable
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More informationTypical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
Device Features NF = 0.91 db @ 900MHz at RF connectors of Demo board Gain = 22.0 db @ 900 MHz OIP3 = 36.0 dbm @ 1900MHz, 38.0 dbm @ 2450MHz Output P1 db = 20.5 dbm @ 900/1900/2140 MHz 5V/75mA, MTTF > 100
More informationFH1. Functional Diagram. Product Description. Product Features. Applications. Typical Performance (6) Specifications (1) Absolute Maximum Rating
FH Product Features 5 4 MHz Low Noise Figure 8 db Gain +4 dbm OIP3 + dbm PdB Single or Dual Supply Operation Lead-free/Green/RoHS-compliant SOT-89 Package MTTF > years Applications Mobile Infrastructure
More informationCMD255C GHz High IP3 Fundamental Mixer. Features. Functional Block Diagram. Description
Features Functional Block Diagram Low conversion loss High IP3 High isolation Wide IF bandwidth Pb-free RoHs compliant 3x3 mm SMT package Description The CMD255C3 is a general purpose double balanced mixer
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More informationFeatures. = +25 C, Vs = 5V, Vpd = 5V
v1.117 HMC326MS8G / 326MS8GE AMPLIFIER, 3. - 4. GHz Typical Applications The HMC326MS8G / HMC326MS8GE is ideal for: Microwave Radios Broadband Radio Systems Wireless Local Loop Driver Amplifier Functional
More informationAbsolute Maximum Ratings Parameter Rating Unit Max Supply Current (I C1 ) at V CC typ. 150 ma Max Supply Current (I C2 ) at V CC typ. 750 ma Max Devic
850MHz 1 Watt Power Amplifier with Active Bias SPA2118Z 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description RFMD s SPA2118Z is a high efficiency GaAs Heterojunction
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Typical Applications The is ideal for: Clock Generation Applications: SONET OC-192 & SDH STM-64 Point-to-Point & VSAT Radios Test Instrumentation Military & Space Sensors Functional Diagram Features High
More informationProduct Description. Ordering Information. GaAs HBT GaAs MESFET. InGaP HBT
InGaP HBT MMIC Amplifier 5MHz to 3MHz RFGA244 InGaP HBT MMIC AMPLIFIER 5MHz TO 3MHz Package: SOT-89 Features Low Cost Broadband Gain Internally Matched Internal Active Bias No Dropping Resistor Single
More information= +25 C, IF= 100 MHz, LO = +15 dbm*
v4.514 HMC62LC4 Typical Applications The HMC62LC4 is ideal for: Point-to-Point Point-to-Multi-Point Radio WiMAX & Fixed Wireless VSAT Functional Diagram Features General Description Electrical Specifications,
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More informationFeatures. = +25 C, As a Function of LO Drive & Vdd. IF = 1 GHz LO = -4 dbm & Vdd = +4V
v4.414 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use Functional Diagram Integrated LO Amplifier: -4
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More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v4.414 Typical Applications Features
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More informationFeatures. = +25 C, IF = 100 MHz, LO = 0 dbm, Vcc1, 2, 3, = +5V, G_Bias = +3.5V*
v3.1 LO AMPLIFIER, 7 - MHz Typical Applications The HMC684LP4(E) is Ideal for: Cellular/3G & LTE/WiMAX/4G Basestations & Repeaters GSM, CDMA & OFDM Transmitters and Receivers Features High Input IP3: +32
More informationParameter Min. Typ. Max. Min. Typ. Max. Units
v1.214 HMC163LP3E Typical Applications The HMC163LP3E is ideal for: Point-to-Point and Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Sensors Functional Diagram Features
More informationTypical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
Device Features OIP3 = 28 dbm @ 1900 MHz Gain = 16 db @ 1900 MHz Output P1 db = 15.5 dbm @ 1900 MHz 50 Ω Cascadable Patented temperature compensation Lead-free/RoHS-compliant SOT-89 SMT package Product
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Features Functional Block Diagram Low conversion loss High isolation Wide IF bandwidth Passive double balanced topology Pb-free RoHs compliant 3x3 mm SMT package Description The CMD178C3 is a general purpose
More informationFeatures. = +25 C, IF= 100 MHz, LO= +15 dbm* Parameter Min. Typ. Max. Min. Typ. Max. Units
v3.514 MIXER, 5.5-14. GHz Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Sensors Military End-Use Functional Diagram Features Passive Double Balanced
More informationNot recommended for new designs
Device Features NF = 0.7 db @ 900MHz at RF connectors of Demo board Gain = 19.0 db @ 900 MHz OIP3 = 36.0 dbm @ 1900MHz, 2450MHz Output P1 db = 21.0 dbm @ 900MHz, 22.0 dbm @2450MHz 5V/48mA, MTTF > 100 Years,
More information= +25 C, IF= 100 MHz, LO = +15 dbm*
v3.514 Typical Applications Features The is ideal for: Point-to-Point and Point-to-Multi-Point Radio Digital Radio VSAT Functional Diagram Wide IF Bandwidth: DC - 3.5 GHz Image Rejection: 35 db LO to RF
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More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v3.514 MIXER, 5.5-14. GHz Typical
More informationFeatures. = +25 C, IF = 1 GHz, LO = +13 dbm*
v.5 HMC56LM3 SMT MIXER, 24-4 GHz Typical Applications Features The HMC56LM3 is ideal for: Test Equipment & Sensors Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Functional Diagram
More informationTypical Performance 1
Device Features Internally matched to 50 ohms Operated at 3.0V and 5.0V 37.5 dbm Output IP3 at 0dBm/tone at 700MHz 22.5dB Gain at 700MHz 21.1dBm P1dB at 700 MHz 0.40 db NF at 700MHz on evaluation board
More informationThe Hmc869LC5 is ideal for: Point-to-Point and Point-to-Multi-Point Radio. Parameter Min. Typ. Max. Units
Typical Applications The Hmc86LC is ideal for: Point-to-Point and Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Functional Diagram Features Electrical Specifications, T
More informationTypical Performance 1. 2 OIP3 _ measured with two tones at an output of 7 dbm per tone separated by 1 MHz. Absolute Maximum Ratings
Device Features OIP3 = 32 dbm @ 1900 MHz Gain = 21.5 db @ 1900 MHz Output P1 db = 19 dbm @ 1900 MHz 50 Ω Cascadable Patented temperature compensation Lead-free/RoHS-compliant SOT-89 SMT package Product
More information= +25 C, IF= 100 MHz, LO = +15 dbm*
v3.514 HMC52LC4 6-1 GHz Typical Applications Features The HMC52LC4 is ideal for: Point-to-Point and Point-to-Multi-Point Radio Digital Radio VSAT Functional Diagram Wide IF Bandwidth: DC - 3.5 GHz Image
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v2.514 MIXER, 2.5-7. GHz Typical
More informationTypical Performance 1
Device Features Internally matched to 50 ohms Operated at 3.0V and 5.0V 36.2 dbm Output IP3 at 0dBm/tone at 1850 MHz 18.5dB Gain at 1850MHz 19.6dBm P1dB at 1850MHz 0.65 db NF at 1850MHz on evaluation board
More informationCMD179C GHz Fundamental Mixer. Features. Functional Block Diagram. Description
Features Functional Block Diagram Low conversion loss High isolation Wide IF bandwidth Passive double balanced topology Pb-free RoHs compliant 3x3 mm SMT package Description The CMD179C3 is a general purpose
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More informationDescription. Specifications
PW21 Wideband Block Features to 6MHz 21.4dB @ 7MHz P1dB 16.3dBm @ 23MHz OIP3 3.6dBm @ 19MHz Lead-free / Green / compliant SOT-89 Package Applications Base station / Repeater / Mobile / Automotive / Military
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More informationTypical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
Device Features OIP3 = 44.0 dbm @ 70 MHz Gain = 20.3 db @ 70 MHz Output P1 db = 23.5 dbm @ 70 MHz 50 Ω Cascadable Patented over voltage protection Lead-free/RoHS-compliant SOT-89 SMT package Product Description
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Device Features Internally matched to 50 ohms This can be operated at Vd of 3.3V and 4.4V 37.0 dbm Output IP3 at 5dBm/tone at 1900MHz 15.5 db Gain at 1900MHz 22.0 dbm P1dB at 1900 MHz 1.6 db NF at 1900MHz
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