TGA GHz 5 W GaN Power Amplifier

Transcription

1 Product Description Qorvo s TGA2214 is a wideband power amplifier fabricated on Qorvo s QGaN15 GaN on SiC process. The TGA2214 operates from 2 GHz and achieves 5 W of saturated output power with 14 db of large signal gain and greater than 2 % power-added efficiency. This combination of wideband power, gain and efficiency provides system designers the flexibility to improve system performance while reducing size and cost. The TGA2214 is matched to 5 Ω with integrated DC blocking capacitors on both RF ports simplifying system integration; it is ideally suited for electronic warfare, test instrumentation and radar applications across both military and commercial markets. Lead free and RoHS compliant. Evaluation Boards are available upon request. Functional Block Diagram 2 3 Product Features Frequency Range: 2 GHz POUT: 37 PIN = 23 dbm PAE: 2 PIN = 23 dbm Large Signal Gain (PIN = 23 dbm): 14 db Small Signal Gain: 22 db Return Loss: 7 db Bias: VD = +22 V, IDQ = 45 ma, VG = 2.3 V Typical Chip Dimensions: 2.87 x 4.87 x.1 mm Performance under CW operation Performance is typical across frequency. Please reference electrical specification table and data plots for more details. 1 4 Applications 6 5 Test Equipment Electronic Warfare Military Radar Ordering Information Part No. ECCN Description TGA2214 3A1.b.2.c 2 GHz 5 W GaN Power Amplifier Data Sheet Rev. D January 4, of

2 Electrical Specifications Test conditions unless otherwise noted:, VD = +22 V, IDQ = 45 ma, VG = 2.3 V Typical, CW. Parameter Min Typ Max Units Operational Frequency Range 2 GHz Output PIN = 23 dbm Power Added PIN = 23 dbm Small Signal Gain Input Return Loss Output Return Loss Frequency = 37.3 Frequency = 1 GHz 38.1 dbm Frequency = GHz 37.6 Frequency = 22.8 Frequency = 1 GHz 21.4 Frequency = GHz 21.6 Frequency = 25.4 Frequency = 1 GHz 25 Frequency = GHz 22 Frequency = 1.2 Frequency = 1 GHz 11 Frequency = GHz 13.5 Frequency = 9 Frequency = 1 GHz 13.5 Frequency = GHz 12.5 IM3 (POUT/Tone = 31 dbm/tone, 1 MHz spacing) -2 dbc IM5 (POUT/Tone = 31 dbm/tone, 1 MHz spacing) -33 dbc Small Signal Gain Temperature Coefficient -.4 db/ C Output Power Temperature Coefficient -.8 dbm/ C % db db db Recommended Operating Conditions Parameter Value / Range Drain Voltage (VD) +22 V Drain Current (IDQ) 45 ma Gate Voltage (VG) 2.3 V (Typ.) Temperature (TBASE) 4 to Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Data Sheet Rev. D January 4, of

3 Performance Plots Small Signal Conditions unless otherwise specified: VD = +22 V, IDQ = 45 ma, VG = 2.3 V Typical, CW. TGA Gain vs. Frequency vs. Temperature 3 Gain vs. Frequency vs. Drain Current S21 (db) 24 S21 (db) C ma 45 ma Input Return Loss vs. Freq. vs. Temp. Input Return Loss vs. Freq. vs. Drain Current S11 (db) C S11 (db) ma 45 ma Output Return Loss vs. Freq. vs. Temp. Output Return Loss vs. Freq. vs. I D S22 (db) -15 S22 (db) C ma 45 ma Data Sheet Rev. D January 4, of

4 Performance Plots Large Signal Conditions unless otherwise specified: VD = +22 V, IDQ = 45 ma, VG = 2.3 V Typical, CW. TGA Output Power vs. Input Power vs. Temp. Frequency = 1 GHz 4 Output Power vs. Input Power vs. Freq. Temp = Output Power (dbm) C Output Power (dbm) GHz GHz Output Power vs. Frequency vs. V D 4 Output Power vs. Frequency vs. Temp Output Power (dbm) V 22 V Output Power (dbm) C 35 Temp =, Pin = 23 dbm P in = 23 dbm Output Power vs. Frequency vs. I DQ Output Power (dbm) ma 45 ma P in = 23 dbm, Temp = Data Sheet Rev. D January 4, of

5 Performance Plots Large Signal Conditions unless otherwise specified: VD = +22 V, IDQ = 45 ma, VG = 2.3 V Typical, CW. TGA PAE vs. Frequency vs. V D P in = 23 dbm, Temp = Power Gain vs. Frequency vs. V D Power Added Efficiency (%) V 22 V Gain (db) V 22 V P in = 23 dbm, Temp = Power Added Efficiency (%) Temp = PAE vs. Input Power vs. Freq. 1 GHz GHz Gain (db) Power Gain vs. Input Power vs. Freq. 1 GHz GHz Temp = Power Added Efficiency (%) PAE vs. Frequency vs. Temp. P in = 23 dbm -4 C Gain (db) Power Gain vs. Input Power vs. Temp. Frequency = 1 GHz -4 C Data Sheet Rev. D January 4, of

6 Performance Plots Large Signal Conditions unless otherwise specified: VD = +22 V, IDQ = 45 ma, VG = 2.3 V Typical, CW. TGA2214 Drain Current (A) Drain Current vs. Frequency vs. V D 2 V 22 V P in = 23 dbm, Temp = Gate Current (ma) Gate Current vs. Frequency vs. V D P in = 23 dbm, Temp = 2 V 22 V Drain Current (A) Drain Current vs. Frequency vs. Temp. P in = 23 dbm -4 C Gate Current (ma) Gate Current vs. Frequency vs. Temp. P in = 23 dbm -4 C Drain Current vs. Input Power vs. Freq. Temp = 2 Gate Current vs. Input Power vs. Freq. Temp = Drain Current (A) GHz GHz Gate Current (ma) GHz GHz Data Sheet Rev. D January 4, of

7 Performance Plots Linearity Conditions unless otherwise specified: VD = +22 V, IDQ = 45 ma, VG = 2.3 V Typical, CW. IM (dbc) Intermodulation Distortion vs. Frequency Pout/tone = 31 dbm, 1 MHz Tone Spacing Temp = IM5 IM IM3 (dbc) IM3 vs. Output Power vs. Frequency 1 MHz Tone Spacing, Temp = 1 GHz GHz Output Power per Tone (dbm) IM5 (dbc) IM5 vs. Output Power vs. Frequency 1 MHz Tone Spacing, Temp = 1 GHz GHz Output Power per Tone (dbm) 2f Output Power (dbc) nd Harmonic vs. Output Power vs. Freq. Temp = 1 GHz Fundamental Ouptut Power (dbm) 3f Output Power (dbc) rd Harmonic vs. Output Power vs. Freq. Temp = 1 GHz Fundamental Output Power (dbm) Data Sheet Rev. D January 4, of

8 Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1) TBASE =, VD = +22 V (CW) 7 C/W Channel Temperature (TCH) (Under RF drive) At Freq = 9.5 GHz, PIN = 23 dbm: IDQ = 45 ma, ID_Drive = 1.28 A 232 C Median Lifetime (TM) POUT = 38.5 dbm, PDISS = 21 W 4.4E+6 Hrs Notes: 1. Thermal resistance measured to back of carrier plate. MMIC mounted on 2 mils CuMo carrier using 8/2 AuSn. Median Lifetime Test Conditions: VD = +28 V; Failure Criteria = 1 % reduction in ID_MAX during DC Life Testing Median Lifetime, T M (Hours) 1E+15 1E+14 1E+13 1E+12 1E+11 1E+1 1E+9 1E+8 1E+7 1E+6 1E+5 FET16 (QGaN15) Median Lifetime vs. T CH 1E Channel Temperature, T CH ( C) Dissipated Power vs. Freq. vs. Temp. Temp Pin = 23 = 25 dbm, C CW 2 P DISS (W) C Data Sheet Rev. D January 4, of

9 Applications Information and Pad Layout V G V G1 R1 1 Ohms 1 pf C3 1 pf C4 1 pf 1 pf V G2 R2 1 Ohms C5 1 µf C6 1 µf RF IN RF OUT V D1 V D2 R3 1 Ohms C1 1 pf C2 1 pf R4 1 Ohms C7 1 µf C8 1 µf V D Bias Up Procedure 1. Set ID limit to 1.4 A, IG limit to 2 ma 2. Apply 5 V to VG 3. Apply +22 V to VD; ensure IDQ is approx. ma 4. Adjust VG until IDQ = 45 ma (VG ~ 2.3 V Typ.). 5. Turn on RF supply Bias Down Procedure 1. Turn off RF supply 2. Reduce VG to 5 V; ensure IDQ is approx. ma 3. Set VD to V 4. Turn off VD supply 5. Turn off VG supply Data Sheet Rev. D January 4, of

10 Assembly Drawing MMIC bonding detail: Bill of Materials Reference Des. Value Description Manuf. Part Number C1, C2 1 pf Cap, +5 V, 1 %, SLCC Presidio MSA3535B12K2H5C-F C3, C4 1 pf // 1 pf Cap, +5 V, 2 %, X7R, MLCC Presidio MVB33X13M2H5C1F C5, C6, C7, C8 1 µf Cap, 126, 2 %, +5 V, X5R Various R1, R2, R3, R4 1 Ohms Res, 42, 5 % Various Data Sheet Rev. D January 4, of

11 Mechanical Information Units: millimeters Thickness:.1 Die x,y size tolerance: ±.5 Ground is backside of die Bond Pad Description Pad No. Symbol Pad Size (mm) Description 1 RF IN.15 x.2 RF Input; matched to 5 Ω, DC blocked 2 VG1 (1).2 x.1 Gate voltage for stage 1, bias network is required; see Application Circuit on page 9 as an example. 3 VG2 (1).2 x.2 Gate voltage for stage 2, bias network is required; see Application Circuit on page 9 as an example. 4 RF OUT.15 x.2 RF Output; matched to 5 Ω, DC blocked 5 VD2 (2).4 x.2 Drain voltage for stage 2, bias network is required; see Application Circuit on page 9 as an example 6 VD1 (2).3 x.125 Drain voltage for stage 1, bias network is required; see Application Circuit on page 9 as an example Notes: 1) V G1 & V G2 may be tied together off-chip. 2) V D1 & V D2 may be tied together off-chip Data Sheet Rev. D January 4, of

12 Assembly Notes Component placement and adhesive attachment assembly notes: Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment (i.e. epoxy) can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Reflow process assembly notes: Use AuSn (8/2) solder and limit exposure to temperatures above 3 C to 3 4 minutes, maximum. An alloy station or conveyor furnace with reducing atmosphere should be used. Do not use any kind of flux. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes: Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonic are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with.7-inch wire. Data Sheet Rev. D January 4, of

13 Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current - 1 st Stage (ID1) - 2 nd Stage (ID2) Gate Current: - 1 st Stage (IG1) - 2 nd Stage (IG2) Power Dissipation (PDISS), Input Power, CW, 5 Ω, (PIN) Value / Range V 5 to V.5 A 1. A See IG_MAX plot 3 W 31 dbm Input Power, CW, VSWR 3:1, (PIN) 31 dbm Channel Temperature (TCH) 275 C Mounting Temperature (3 Seconds) 32 C Storage Temperature 55 to +15 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Maximum Gate Current (ma) I G_MAX vs. T CH vs. Stage Total Ig_max Stage1 Stage Channel Temperature ( C) Data Sheet Rev. D January 4, of

14 Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) TBD JEDEC Standard JESD22 A114 Caution! ESD-Sensitive Device Solderability Compatible with the latest version of J-STD-2, Lead free solder, 26 C RoHS Compliance This product is compliant with the 211/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 215/863/EU. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br42) Free PFOS Free SVHC Free Qorvo Green Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo: Tel: Web: mail: info-sales@qorvo.com For technical questions and application information: info-products@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 216 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Data Sheet Rev. D January 4, of