MEMS / MOEMS. Stand und Perspektiven

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1 MEMS / MOEMS Stand und Perspektiven Hubert Lakner Institute for Photonic Microsystems (IPMS Dresden) Technische Universität Dresden Prof. for Optoelectronic Devices and Systems

2 IPMS-Budget (in Mio ) 25 FhG Basic Funding 20 Public Projects Industrial Projects

3 Das IPMS Photonische Mikrosysteme für neue Anwendu Hubert Lakner

4 Schwerpunkt 2006/07: Erweiterung des IPMS Erweiterung Institutsgebäude Institutsgebäude von Süd 1992 übernimmt das IMS Neuer Reinraum 50% eines Laborgebäudes und 40% eines Reinraums des ZMD

5 Einweihung des neuen Reinraums am 10. Sept Quadratmeter 150-mm-Siliziumwafer Neuer Reinraum mit Übergang zum Institutsgebäude

6 Customer specific product development Spatial Light Modulators for Leading Edge Mask and Direct Writing in Semiconductor Microlithography (Micronic Laser Systems, ASML) Microscanners (1D and 2D) for Bar Code / Matrix Code Reading and Projection Displays (Intermec, Microvision) Organic Light Emitting Diodes for Displays and Lighting (Novaled AG, OSRAM, PHILIPS)

Photonic Micro Systems IPMS Active area: 33x8mm 2

7 Spatial Light Modulator Chip The SLM chip with 1 million analog mirrors developed by the Institute of Photonic Micro Systems IPMS Active area: 33x8mm x 512 mirrors 16 microns pixel pitch 2 khz frame rate

oxide U address photoresist aluminium dicing debris photoresist finished

8 Process Flow for the Micro-Mirrors planarization metal substrate (containing CMOS circuitry) sacrificial layer stopper photoresist mirror silicon silicon oxide U address photoresist aluminium dicing debris photoresist finished device with one deflected mirror address electrode mirror electrode counter electrode

9 Optische Funktionsprinzipien Dynamisches Beugungsgitter mit 16 Mikrometer Pixeln: IPMS chip Ausgelenkte Spiegel WLI-Aufnahme

10 The Technology - SLM Writer Micro-stepper with a programmable mask Flash on the fly

11 Sigma Laser Writing tool for 248nm DUV Key specs for mask making: Minimum Feature: 320 nm Assist features: 140 nm CD uniformity: 5 nm Address Grid: 1.6 nm SLM size: 512 x 2048 Flash rate: 2 khz Number of passes: nm L/S 180 nm L/S 140 nm L/S

12 Principle of mask and direct writing

13 Pixel calibration The pixels have non-linear voltage-to-brightness characteristics They have individual transfer functions The transfer functions are measured and stored in a huge look-up table that is accessed in real time geometry data 6 bit deep bitmap gray value map of pixel transfer functions DAC value DAC Mirror voltage SLM

14 Calibration result Before calibration After calibration

15 2-level Aktuatoren mit TiAl Feder und separater Spiegelplatte Variante mit Joch in der Federebene Kraftangriff am Joch: keine Spiegeldeformation Variante mit Knochenförmiger Feder Kraftangriff am Spiegel

16 Eigenschaften der 2-Ebenen Aktuatoren Test der Stabilität der Auslenkung (30 min) Drift: <1nm/30min Deflection [nm] Design parameters TiAl spring: 200nm Gap: 770nm Time [min]

17 Benefits of the SLM Lithography Systems Much faster than E-beam writers by using 1 million mirrors Less sensitive to electro magnetic interference Fast prototyping and higher throughput Reduced costs The present mask writing tool is used by INTEL for making PSM masks down to the 45nm technology node Future SLMs for direct writing on wafers will be developed (target: 8 million pixels, 7 micrometer pixel pitch, 8 khz puls repetition/frame rate, shorter wavelenghts 193nm)

18 Wave Front Correction for Adaptive Optics Goal: High-Resolution High-Precision High-Speed Optical Phase Control

19 Schematic of AO Wavefront Correction Goal: Real-Time Compensation of Dynamic Higher Order Wavefront Distortions

20 Applications Imaging Enhancement through Inhomogeneous or Turbulent Media Astronomy: Atmospheric Turbulence Compensation Ophtalmology: Eye Aberration Correction Microscopy: In-vivo Imaging through Biological Tissue Ultra fast Laser Pulse Shaping Free Space Optical Data Communication General Needs: High-speed, high-resolution optical phase control Formation of arbitrary spatial phase patterns with highest possible fidelity

21 Adaptive Optics Mirror Architecture

22 Measured Deflection of 40 μm Piston Mirrors Piston MMA surface 300 nm deflection Deflection Characteristic Measurement: Wyko NT 2000 White Light Interferometer Arbitrary Line Scan

23 MEMS Phase Former Kit CMOS integrated 240 x 200 Micro Mirror Array Driving board with high-speed FireWire Interfa Driver software for Windows XP based PC

24 AO Demonstration System and Testbed Imaged USAF test chart a) undisturbed b) with 10 μm PtV aberration Top view photograph c) with modulo 2π correction (18 nm)

$of all refractive$ errors (OPD pattern)

25 Aberration Measurement Objective, spatially and temporally resolved measurement of the eye using many hundreds of data points individual map of all refractive errors (OPD pattern) data for a personalized treatment & preview system

26 Correction of an Complex Eye Aberration Uncorrected RMS = 293 nm Corrected RMS = 47 nm

Femtosecond Laser Pulse Shaping Transmissive with LC-SLM Grating Incoming pulse Lens Phase-Modulator In Fourier-Plane Outgoing pulse Lens Grating Pulse spectra Reflective with

27 Femtosecond Laser Pulse Shaping Transmissive with LC-SLM Grating Incoming pulse Lens Phase-Modulator In Fourier-Plane Outgoing pulse Lens Grating Pulse spectra Reflective with MEMS-SLM Spectral decomposition Grating Lens Phase adjustment of each spectral component MEMS Phase-Modulator Superposition of modified pulse after M. Hacker, Universität Jena, IOQ

Examples of Pulse Shaping Pulse Compression Input Optimized phase pattern Output arbitrary compressed pulse fs-pulse THz Pulse Train Generation Input

28 Examples of Pulse Shaping Pulse Compression Input Optimized phase pattern Output arbitrary compressed pulse fs-pulse THz Pulse Train Generation Input Sinusoidal phase pattern Output fs-pulse pulse train Animation:

29 Microscanners made from BSOI Wafers MicroScanningMirror 1 mm

30 Fabrication Process starting material highly doped BSOI-wafer with 30 um SOI fabrication insulation trenches fabrication metal lanes/pads backside module I aluminization, 80 nm Al backside module II etch of trenches (ASE) silicon silicon oxide aluminium silicon nitride

33 Barcode Scan Engine MIRAGE

34 Scanning Mirror Display

35 RGB-Projektionsdisplay

36 Micro Laser Camera: Endoscopy Chip Size: 2900 μm x 2350 μm Mirror: Ø 500 μm Display Light sources 500µm R G B PC Scan control Control Digitizer R G B Single mode illumination fiber Scanner Multi mode collection fiber Detectors Fixed mirror Subject

37 Endoscopy Source: Microvision Scan-Head: 8 mm diameter, SVGA resolution, full colour

38 Scanning Mirror Spectrometer NIR spectrometer scan range nm 18 nm FWHM detector signal / a. u. 0,5 NIR diode with 1300 nm NIR diode with 1550 nm 0,4 NIR diode with 1450 nm 0,3 0,2 0,1 0, wavelength / nm

39 Z- deflection for dynamic optical path length variation for dynamic focus & FTIR spectrometers 1,0 transmission spectrum polystyrene t = 1.5 mm 0,8 0,6 0,4 0,2 0,0 MEMS based FT-Spectrometer, average of 500 scans reference Nicolet Nexus 870 res. 2cm wavelength / nm transmission

40 FTIR Spectrometer with dynamic mirror MEMS mirror TE-cooled MCT detector Optical bench: 100 x 60 x 30 mm 3 Scan range: 2 5 μm Resolution 30 cm -1 Time resolved measurements possible Small Portable

41 Summary, conclusions, and outlook Photonic microsystems or MOEMS (MicroOptoElectroMechanical Systems) enable new and innovative product developments. The production gap must be closed. More and more products reach the market: MOEMS-Displays, bar code readers, SLMs for lithography, Microspectrometers, Scanners and Imagers, OLED displays and white light sources. Prognosted Growth Rates are in the range of 15% to 20% annually.

42 Center for Organic Materials and Electronic Devices Dresden

43 Mission of COMEDD Customer and Application Specific Research, Development and Pilotfabrication on novel device concepts and manufacturing methods in the field of organic materials (small molecule) Integration technologies for novel devices concepts Fabrication technologies based on innovative equipment concepts for rigid as flexible substrates New product developments including prototyping and first pilot approval Technology Development and Transfer Leading research and development center in Europe for small-molecule organic technology

44 OLED: substrate emitter vs. inverted structure Light emission _ Light emission + + _ glass substrate transparent conductor (ITO) transparent conductor (ITO) organic layers organic layers metal cathode metal cathode glass substrate Inverted Structure Inverted emitter: - important for intransparent substrate - difficulty: work function control of contacts

45 Small Molecule vs. Polymers Small-Molecules Polymer Technology: Evaporation Technology: Spin-On/Ink-Jet Source: Covion

for small-molecule devices Luminance [cd/m 2 ] 10 4 10,000 cd/m 2 @5.

46 p-i-n-oled 10 5 N-doping: Batho-Phenanthroline doped with Li Current efficiency: 5.27 (pure Alq3 emitter) Lowest voltages reported in literature for small-molecule devices Luminance [cd/m 2 ] ,000 cd/m ,000 cd/m cd/m Voltage [V]

47 Optical Organic based markets First wave Second wave Third wave Lighting/Signage Solar cell Displays OLED Microdisplays OLED Optoelectronic Source: Samsung, Kodak, GE, Philips Lighting

48 COMEDD Working areas OLED Signage and Lighting Rigid Substrates Flexible Substrates Organic based MOEMS OLED on CMOS integration OLED + MEMS Organic Solarcells Rigid Substrates Flexible Substrates

49 LED vs. OLED Source: Osram OS LED Point source High Peak brightness High efficiency Long lifetime Loss for area distribution high OLED Area source Low Peak brightness High efficiency Lifetime to be improved Low loss for area distribution

50 Applications OLED-on-CMOS Microdisplay viewfinder, projection, HMD, optical inspection,... Bi-directional microdisplay OLED + optical feedback via internal CMOS sensor Light barriers Opto-coupler Optical sensors e.g. chemical, medical (fluorescence, photoplethysmography,...) Communication chip-to-chip, board-to-board, chip-to board,...

OLED requirements for Bi-directional Displays Deckelektrode Met1 Organik / OLED Met4 Met3 Met2 FOX FOX FOX PMOS Passivierung (Photolack) OLED requirements Met3 Met2 - High brightness >

51 OLED requirements for Bi-directional Displays Deckelektrode Met1 Organik / OLED Met4 Met3 Met2 FOX FOX FOX PMOS Passivierung (Photolack) OLED requirements Met3 Met2 - High brightness > 5000 cd/m² Met1 - High efficiency > 15 lm/w Poly - High transparency > 70% - Low Voltage < 5 V - Long lifetime > 5000 hr. - Good integration possibility P-Sub Photodiode Met3 Met2 Met1

52 Dresden The heart of OLED technology R&D Materials OLED-Technol. Tools Products Modeling Industry 2008: more than 300 people altogether VON ARDENNE

53 13N8857 Signage applications 100x50 mm signage OLED on PCB signage 100x100 mm signage OLED on metal foil

54 Concepts for White lighting

55 Lighting applications OLED on ZAO Large area lighting

56 Lighting applications

57 TOLED(Transparent OLED) Orange PIN OLED and transparency Encapsulation glass Transmittance in visible range ( nm) : 69,69 % Transmittance 100 ITO... Organic stack ITO Glass substrate Transmittance (%) Wavelength (nm)

58 Transparent OLED Signage

59 OLED on CMOS 30μm 16SV /1733

60 Results: OLED emission spectra (Microstructed substrate) 1,0 1,0 blue emitter (SRmax=47.4e 3 W/m sr nm; L= Cd/m ) 0,9 Standardised Luminance L/Lmax [1] 0,8 0,6 0,4 0,2 red emitter/tin electrode (V=3.75V; Lmax=22.0 Cd/m²) green emitter/tin electrode (V=3.25V; Lmax=108.9 Cd/m²) blue emitter/tin electreode (V=6.00V; Lmax=477.6 Cd/m²) 0, Viewing angle? [ ] Red 100 cd/m² 4.8 V *) Standardised spectral radiance [1] 0,8 0,7 0,6 0,5 0,4 0,3 0,2 0,1 0,0 Colour coordinate (CIE 1931) (0.68, 0.31) Wavelenght λ [nm] Normalized spectral radiances Maximum spectral Green 3.2 V *) (0.30, 0.63) 527 nm Blue 4.4 V *) (0.14, 0.09) 452 nm Orange Luminance versus viewing angle 2.6 V (0.63, 0.36) 639 nm 613 nm *) not optimized

In-Line Fabrication System (Applied Materials) OLED cluster for Top Emission

61 Planned Fabrication Infrastructure Cleanroom 900 m² class 10 Fabrication lines Gen2 Fabrication line 8 inch MOEMS line Roll-to-Roll Line Worldwide first vertical In-Line Fabrication System (Applied Materials) OLED cluster for Top Emission (Sunic) Infrastructure Measurement Sublimation Testing equipment Total investment 30 Mio. Euro

62 COMEDD Production facilities - Planning Prototype line Rigid substrates Pilot line Rigid/Flexible substrates Pilot line OLED-on-CMOS Roll-to-Roll Substrate size 200x200 mm² 370 x 470 mm² (Generation 2) Substrate type Glass Glass or laminated foil 150, 200 mm diameter Silicon/CMOS wafer Cycle time 120 minutes 3 minutes 60 minutes mm width Metall foil Pilot max. volume substrates/year Pilot max. volume area Prototype/ technology research and development - 80, ,000 m² - - Ready Q4/2008 Ready Q4/2008 Pilot production - Q1/2009 Q2/2008 -

63 Core Lighting Fabrication Tool (Gen2) masks masks masks masks Cleaning Loading Treatment Aixtron Module (OVPD) Organic Module I Organic Module II Metal Module Unloading Encapsulation AM.1-12 OM.I.1-3 OM.II.1-3 MM.1-2 Modular and fully automated system Pre-Treatment by plasma 1 module Organic layer technology OVPD (Organic Vapour Phase Deposition) 1 module (up to 6 layers*) VTE (Vacuum Thermal Evaporation) 5 modules (up to 6 layers*) Metal layer 2 modules e.g. Aluminium and Silver *Including dopand and host material

Roll-to-Roll Coater for Metal Strip Batch type Roll-to-Roll Coater substrate width 300 mm, thickness 0.2 0.

64 Roll-to-Roll Coater for Metal Strip Batch type Roll-to-Roll Coater substrate width 300 mm, thickness mm Pretreatment by ion beam and heating Coating Stations: up to 9 novel linear evaporators for organic materials in total (5 double, 4 single) 2 evaporators for metals 1 DC/RF magnetron OLED-specific substrate handling strip guidance w/o front side roller contact un/rewinding with plastic liner transfer of coated substrate under inert atmosphere ion beam retreatment substrate and Liner unwinding Substrate and liner rewinding organic material Evaporation sources magnetron Metal Evaporation sources

65 Conclusion In organic technologies the display market segment is only the first wave of technology The new market segments offers great opportunities for further market grow The IPMS center wants to be the leading research institute for small-molecule photonic organic technologies in Europe

PROCESS TECHNOLOGIES FOR ADVANCED ORGANIC ELECTRONIC DEVICES: MICRODISPLAYS, LIGHTING AND SOLAR CELLS

PROCESS TECHNOLOGIES FOR ADVANCED ORGANIC ELECTRONIC DEVICES: MICRODISPLAYS, LIGHTING AND SOLAR CELLS Dr. Christian May Fraunhofer IPMS - Center for Organic Materials and Electronic Devices Dresden COMEDD