ADA-4789 Data Sheet Description Features Specifications Package Marking and Pin Connections 4GX Applications

Transcription

1 ADA-789 Silicon Bipolar Darlington Amplifier Data Sheet Description Avago Technologies ADA-789 is an economical, easyto-use, general purpose silicon bipolar RFIC gain block amplifiers housed in SOT-89 surface mount plastic package. The Darlington feedback structure provides inherent broad bandwidth performance, resulting in useful operating frequency up to. GHz. This is an ideal device for small-signal gain cascades or IF amplification. ADA-789 is fabricated using Avago s HP silicon bipolar process, which employs a double-diffused single poly-silicon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high ft and high NPN breakdown ( GHz ft at V BVCEO). The process utilizes industry standard device oxide isolation technologies and submicron aluminum multi-layer inter-connects to achieve superior performance, high uniformity, and proven reliability. Package Marking and Pin Connections GX #1 # # RFin GND RFout Top View # # #1 RFout GND RFin Bottom View Note: Package marking provides orientation and identification G = Device Code x = Month code indicates the month of manufacture Features Small Signal Gain Amplifier Operating Frequency: DC. GHz Unconditionally Stable Ohms Input & Output Flat, Broadband Frequency Response up to 1 GHz Operating Current: 8 ma Industry Standard SOT-89 Package Single Supply VSWR < Throughput Operating Frequency Specifications 9MHz,.8V, ma (Typical) 1. db Associated Gain 17. dbm P1dB. dbm OIP. db Noise Figure 9MHz,.V, 8mA (Typical) 1.9 db Associated Gain 18.8 dbm P1dB. dbm OIP. db Noise Figure Applications Cellular/PCS/WLL Base Stations Wireless Data/WLAN Fiber-Optic Systems ISM

2 Typical Biasing Configuration RF input R C = V CC - V d I d C block Tx R c RFC V d =.8 V C block C bypass V CC = V RF output Table 1. Absolute Maximum Ratings [1] at Tc = + C Symbol Parameter Unit MaxRating I d Device Current ma 9 P diss Total Power Dissipation [] mw 7 P in max RF Input Power dbm T j Junction Temperature C T stg Storage Temperature C - to q jc Thermal Resistance [] C/W 1. Operation in excess of any one of these conditions may result in permanent damage to the device.. Ground lead temperature is C. Derate mw/ C for Tc > 11. C.. Thermal Resistance is measured from junction to board using IR method. Table. Electrical Specifications at Tc = + C Symbol Parameter and Test Condition:Id = ma, Zo = W Frequency Units Min. Typ. Max. V d Device Voltage V..8. G p Power Gain MHz 9 MHz [1,]. GHz G p Gain Flatness to 9 MHz.1 to. GHz 1. Typical value determined from a sample size of parts from wafers.. Measurement obtained using production test board described in the block diagram below.. i) MHz OIP Test Condition: F1 = MHz, F = MHz, Pin = - dbm per tone. ii)9 MHz OIP Test Condition: F1 = 9 MHz, F = 9 MHz, Pin = - dbm per tone. iii) MHz OIP Test Condition: F1 = MHz, F = MHz, Pin = - dbm per tone. db db.. FdB db Bandwidth GHz VSWR in Input Voltage Standing Wave Ratio.1 to. GHz 1.:1 VSWR out Output Voltage Standing Wave Ratio.1 to. GHz 1.:1 NF W Noise Figure MHz 9 MHz [1,]. GHz P1dB Output Power at 1dB Gain Compression MHz 9 MHz [1,]. GHz OIP Output Third Order Intercept Point MHz [] 9 MHz [1,,]. GHz [] db.1.. dbm dbm dv/dt Device Voltage Temperature Coefficient mv/ C

3 Table. Typical Electrical performance at Tc = + C, Id=8mA, Zo= Ω Symbol Parameter and Test Condition: Frequency Units Min. Typ. Max. Vd Device Voltage V.1 Gp Power Gain MHz 9 MHz [1,]. GHz NF W Noise Figure MHz 9 MHz [1,]. GHz P1dB Output Power at 1dB Gain Compression MHz 9 MHz [1,]. GHz OIP Output Third Order Intercept Point MHz [] 9 MHz [1,,]. GHz [] 1. Typical value determined from a sample size of parts from wafers.. Measurement obtained using production test board described in the block diagram below. i) MHz OIP Test Condition: F1 = MHz, F = MHz, Pin = - dbm per tone. ii) 9 MHz OIP Test Condition: F1 = 9 MHz, F = 9 MHz, Pin = - dbm per tone. iii) MHz OIP Test Condition: F1 = MHz, F = MHz, Pin = - dbm per tone. db db.1.. dbm dbm.. 9 Block Diagram Input Ohm Transmission (. db loss) DUT Ohm Transmission including Bias (. db loss) Output Block diagram of 9 MHz production test board used for Vd, Gain, P1dB, OIP, and NF measurements show in table &. Circuit losses have been de-embedded from actual measurement.

4 Product Consistency Distribution Charts at 9 MHz, Id=mA Figure 1. Vd Distribution@mA. LSL=.V, Nominal=.8V, USL=.V Figure. Gain Distribution@mA. LSL=1 db, Nominal=1. db, USL=18 db Figure. P1dB Distribution@mA LSL=1. dbm, Nominal=17.1dBm Figure. OIP Distribution@mA. LSL=7 dbm, Nominal=. dbm 1. Statistics distribution determined from a sample size of parts taken from different wafers.. Future wafers allocated to this product may have typical values anywhere between the minimum and maximum specification limits. Typical Performance Curve (at Tc= C, unless specified otherwise) 1 1 Gain (db) P1dB (dbm) 1 1 Figure. Gain vs Frequency at Id = ma. Figure. P1dB vs Frequency at Id = ma.

5 OIP (dbm) 1 NF (db) 1 Figure 7. OIP vs Frequency at Id = ma. 9 1 Figure 8. NF vs Frequency at Id = ma C C 8C 1 Vd (V) Gain (db) C C 8C 8 Figure 9. Id vs. Vd and Temperature. Figure. Gain vs. Id and Temperature at 9 MHz. P1dB (db) Figure 11. P1dB vs. Id and Temperature at 9 MHz. -C C 8C OIP (dbm) 1 -C C 8C 8 Figure 1. OIP vs. Id and Temperature at 9 MHz.

6 NF (db) 1 8 Figure 1. NF vs. Id and Temperature at 9 MHz. -C C 8C Gain (db) Figure 1. Gain vs Id and P1dB (dbm) OIP (dbm) Figure 1. P1dB vs Id and. 8 Figure 1. OIP vs Id and.. - NF (db) IRL (db) Id=mA Id=mA Id=8mA Figure 17. NF vs Id and. Figure 18. Input Return Loss vs Id and Frequency.

7 ORL (db) Gain (db) Id=mA Id=mA Id=8mA 1 Figure 19. Output Return Loss vs Id and Frequency. Figure. Gain vs Frequency at Id = 8 ma 1 P1dB (dbm) OIP (dbm) 1 1 Figure 1. P1dB vs Frequency at Id = 8 ma 1 Figure. OIP vs Frequency at Id = 8 ma NF (db) 1 Figure. NF vs Frequency at Id = 8 ma 7

8 Typical Scattering Parameters At C, Id = ma Freq. GHz S11 S1 S1 S Mag. Ang. db Mag. Ang. Mag. Ang. Mag. Ang S parameters are measured on a micro-strip line made on. inch thick alumina carrier. The input reference plane is at the end of the RFin lead. The output reference plane is at the end of the RFout lead. 8

9 Typical Scattering Parameters At C, Id = ma Freq. GHz S11 S1 S1 S Mag. Ang. db Mag. Ang. Mag. Ang. Mag. Ang S parameters are measured on a micro-strip line made on. inch thick alumina carrier. The input reference plane is at the end of the RFin lead. The output reference plane is at the end of the RFout lead. 9

10 Typical Scattering Parameters At C, Id = 8mA S11 S1 S1 S Freq. GHz Mag. Ang. db Mag. Ang. Mag. Ang. Mag. Ang S parameters are measured on a micro-strip line made on. inch thick alumina carrier. The input reference plane is at the end of the RFin lead. The output reference plane is at the end of the RFout lead.

11 Part Number Ordering Information Part Number No of devices Container ADA-789-BLKG 7 Tape/Reel ADA-789-TR1G 1 Tape/Reel SOT89 Package Dimensions D D1 D D1 POLISH E1 E OR E1 E L L S e1 e S e1 e C D 1. D E OR. HALF ETCHING DEPTH. b b1 MATTE FINISH b POLISH A b1 Dimensions in mm Dimensions in inches Symbols Minimum Nominal Maximum Minimum Nominal Maximum A L b b C D D D E E e S e

12 Device Orientation REEL CARRIER TAPE GX GX GX GX USER FEED DIRECTION COVER TAPE Tape Dimensions. ±.. ±. SEE NOTE. SEE NOTE 1 Ø /-. 8. Ø 1. MIN. A 1.7 ±. R. MAX.. ±. SEE NOTE Bo 1. ±. Ko Ao R. TYP. A SECTION A - A Ao =. Bo =.9 Ko = 1.9 DIMENSIONS IN MM NOTES: 1. SPROCKET HOLE PITCH CUMULATIVE TOLERANCE ±.. CAMBER IN COMPLIANCE WITH EIA 81. POCKET POSITION RELATIVE TO SPROCKET HOLE MEASURED AS TRUE POSITION OF POCKET, NOT POCKET HOLE 1

13 Reel Dimensions 1 Reel R LOKREEL MINNEAPOLIS USA U.S PAT 7 ATTENTION Electrostatic Sensitive Devices Safe Handling Required R 1.. REF. REF 88 REF "A" 9. PS Detail "B" PS Detail "A" (MEASURED AT HUB) (MEASURED AT HUB) MAX. Ø. Dimensions in mm M IN Ø ±. For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright -1 Avago Technologies. All rights reserved. Obsoletes AV1-9EN AV-EN - November 11, 1