4W High Linearity InGaP HBT Amplifier. Product Description

Transcription

1 AH42 Product Features 4 27 MHz +3.7 dbm P1dB -49 dbc 26 dbm db 2 MHz 8 ma Quiescent Current + V Single Supply MTTF > 1 Years Lead-free/green/RoHS-compliant 12-pin 4xmm DFN Package Applications Final stage amplifiers for Repeaters High Power Amplifiers Mobile Infrastructure LTE / WCDMA / EDGE / CDMA Product Description The AH42 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with -49 dbc ACLR and +3.7 dbm of compressed 1dB power, operating off of a single +V supply. It is housed in a lead-free/green/rohscompliant 4xmm DFN package. All devices are 1% RF and DC tested. The AH42 is targeted for use as a final stage amplifier in wireless infrastructure repeaters or as driver stages for high power amplifiers where high performance is required. In addition, the amplifier can be used for a wide variety of other applications within the 4 to 27 MHz frequency band. By operating off of a single +V rail, other higher voltage rails are not necessarily needed thus saving system costs. The amplifier also has the flexibility to operate at higher voltage levels to achieve higher compression if needed by the system. Functional Diagram Function Pin No. RF IN 3,4,,6 RF OUT 7,8,9,1 I REF 12 V BIAS 1 NC 2,11 Specifications Parameter Units Min Typ Max Operational Bandwidth MHz 4 27 Test Frequency MHz 2 Output Channel Power dbm +26 Gain db Input db 12 Output db 7.4 ACLR (2) dbc -49 Output P1dB dbm +3.7 Output IP3 (4) dbm Quiescent Collector Current (3) ma Iref ma 2 Vcc, Vbias V + 1. Test conditions unless otherwise noted: 2ºC, +V Vsupply, 2 MHz, in tuned application circuit. 2. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 1.2 Probability, 3.84 MHz BW 3. This corresponds to the quiescent current under small-signal conditions into pins 6, 7, and 8 when the current setting resistor, connected to the Iref pin, is at 82 Ω. 4. OIP3 is measured with two tones at out an output power of +27 dbm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Typical Performance Parameter Units Typical Frequency MHz Channel Power dbm Gain db 16.1 Input db Output db ACLR (2) dbc Output P1dB dbm Noise Figure db Output IP3 (4) dbm Quiescent Collector Current (3) ma 8 Iref ma 2 Vcc, Vbias V +. The amplifier has been tested for ruggedness to be capable of handling: 1:1 Vcc, 2MHz, +3.2dBm CW Pout, 2 C 1:1 Vcc, 94MHz, +28.dBm IS-9A Pout, 2 C 1:1 Vcc, 2MHz, +26.dBm WCDMA Pout, 2 C Absolute Maximum Ratings Parameter Rating Storage Temperature -6 to + C Vcc, Vbias + V RF Input Power, CW, Ω, Input P9dB Reference Current, Iref 17 ma Dissipated Power, Pmax 7 W Max Junction Temperature, T J For 1 6 hours MTTF 8 C Thermal Resistance, Θ JC 1.6 C / W Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. Description AH42-EG AH42-EPCB MHz Evaluation Board AH42-EPCB MHz Evaluation Board AH42-EPCB MHz Evaluation Board Standard T/R size = 1 pieces on a 7 reel.. TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page 1 of 9 July 21

2 AH42 Application Circuit PC Board Layout Baseplate Configuration Vpd GND GND Vcc Circuit Board Material:. GETEK, single layer, 1 oz copper, ε r = 4.2, Microstrip line details: width =.3, marker spacing =. 1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in laboratory environments. 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding.. TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page 2 of 9 July 21

3 -1. AH42 Typical Device Data S-Parameters (V CC = + V, I CC = 8 ma, 2 C, unmatched ohm system) Gain / Maximum Stable Gain S(1,1) AH42_EG S Swp Max 6GHz S(2,2) AH42_EG S Swp Max 6GHz DB(GMax()) AH42_EG DB( S(2,1) ) AH42_EG Swp Min.1GHz Swp Min.1GHz The gain for the unmatched device in ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the red line. S-Parameters (V CC = + V, I CQ = 8 ma, 2 C, unmatched ohm system, calibrated to device leads) Freq (MHz) S11 (db) S11 (deg) S21 (db) S21 (deg) S12 (db) S12 (deg) S22 (db) S22 (deg) Device S-parameters are available for download off of the website at: TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page 3 of 9 July 21

4 AH MHz Reference Design (AH42-EPCB9) W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 1.2 Probability, 3.84 MHz BW Typical W-CDMA Performance at 2 C Frequency (MHz) Units Channel Power dbm Power Gain db Input db Output db ACLR dbc P1dB dbm Output IP3 At 27dBm/tone, 1MHz spacing dbm Noise Figure db Quiescent Current, Icq 8 ma Vpd, Vcc + V C7 C8 D1 C22 C3 C C1 C2 R1 C C4 C6 C C12 1. The primary RF microstrip line is Ω. 2. Do not exceed.v on Vpd and Vcc or damage will occur to D1. 3. Components shown on the silkscreen but not on the schematic are not used. 4. Vpd used for device power down (low=rf off). The edge of is placed at 7mil from AH42 RFout pin. ( MHz) 6. The edge of C is placed mil from the edge of. (7. 94 MHz) 7. The edge of C is placed at mil from AH42 Rfin pin. ( MHz) 8. The edge of is placed against the edge of C. 9. Ω jumpers can be replaced with copper trace in target application. 18 OIP3 vs. Output Power/Tone vs. Temperature f=94 MHz MHz 94 MHz 96 MHz W-CDMA 3GPP Test Model 1+64 DPCH PAR = 1.2 Probability 3.84 MHz BW OIP3 (dbm) OIP3 vs. Output Power/Tone vs. Frequency MHz 94 MHz 96 MHz Noise Figure vs. Frequency OIP3 (dbm) P1dB (dbm) C -4 C +8 C P1dB vs. Frequency vs. Temperature +2 C -4 C +8 C Frequency (MHz) 2 Efficiency vs Output Average Power vs. Frequency MHz 94 MHz 96 MHz NF (db) Collector Efficiency (%) 1 92 MHz 94 MHz 96 MHz TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page 4 of 9 July 21

5 AH MHz Reference Design (AH42-EPCB196) W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 1.2 Probability, 3.84 MHz BW Typical W-CDMA Performance at 2 C Frequency (MHz) Units Channel Power dbm Power Gain db Input db Output db ACLR dbc P1dB dbm Output IP3 At 27dBm/tone, 1MHz spacing dbm Noise Figure db Quiescent Current, Icq 8 ma Vpd, Vcc + V C7 C1 C2 R1 C3 C4 C D1 C C6 C C8 C16 C12 C9 C1 C11 1. The primary RF microstrip line is Ω. 2. Do not exceed.v on Vpd and Vcc or damage will occur to D1. 3. Components shown on the silkscreen but not on the schematic are not used. 4. Vpd used for device power down (low=rf off). The edge of is placed at 7mil from AH42 RFout pin. ( MHz) 6. The edge of C is placed mil from the edge of. ( MHz) 7. The edge of C16 is placed 34mil from the edge of C. ( MHz) 8. The edge of C is placed at 16mil from AH42 Rfin pin. ( MHz) 9. The edge of is placed 9mil from the edge of C. ( MHz) 1. Ω jumpers can be replaced with copper trace in target application MHz 196 MHz 199 MHz Noise Figure vs. Frequency MHz 196 MHz 199 MHz NF (db) TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page of 9 July 21

6 AH MHz Application Circuit Performance Plots TD-SCDMA 3 Carrier, PAR = 1 Probability, 1.28 MHz BW Typical TD-SCDMA Performance at 2 C Frequency (MHz) Units Channel Power dbm Power Gain db Input db Output db ACLR dbc P1dB dbm Output IP3 At +2 dbm/tone, 1MHz spacing dbm Noise Figure... db Quiescent Current, Icq 8 ma Vpd + V Vcc + V C C16 C23 1. The primary RF microstrip line is Ω. 2. Components shown on the silkscreen but not on the schematic are not used. 3. The edge of is placed at 7 mil from AH42 RFout pin. (7.7 2 MHz) 4. The edge of C is placed nex to the edge of.. The edge of C16 is placed 3 mil from the edge of C. (3.3 2 MHz) 6. The edge of C is placed at mil from AH42 RFin pin. (16 2 MHz) 7. The edge of is placed 1 mil from the edge of C. ( MHz) MHz 2 MHz 22 MHz MHz 2 MHz 22 MHz TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page 6 of 9 July 21

7 AH MHz Reference Design (AH42-EPCB2) W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 1.2 Probability, 3.84 MHz BW Typical W-CDMA Performance at 2 C Units Channel Power dbm Power Gain 13.3 db Input 12 1 db Output db ACLR dbc P1dB dbm Output IP3 At 27dBm/tone, 1MHz spacing dbm Noise Figure.8.6. db Quiescent Current, Icq 8 ma Vpd, Vcc + V C7 C8 C1 C2 R1 C3 C4 C D1 C C6 C C16 C2 C21 C22 C12 1. The primary RF microstrip line is Ω. 2. Do not exceed.v on Vpd and Vcc or damage will occur to D1. 3. Components shown on the silkscreen but not on the schematic are not used. 4. Vpd used for device power down (low=rf off). The edge of is placed at 6mil from AH42 RFout pin. (7.6 2 MHz) 6. The edge of C is placed 6mil from the edge of. (7. 2 MHz) 7. The edge of C16 is placed 34mil from the edge of C. ( MHz) 8. The edge of C is placed at mil from AH42 RFin pin. ( MHz) 9. The edge of is placed 2mil from the edge of C. (24. 2 MHz) 1. Ω jumpers can be replaced with copper trace in target application ACLR vs. Output Average Power vs. Temperature OIP3 vs. Output Power / tone vs. Frequency MHz 2 MHz 217 MHz OIP3 vs. Output Power/Tone vs. Temperature f=2 MHz C -4 C +8 C P1dB vs. Frequency vs. Temperature OIP3 (dbm) MHz 211 MHz 217 MHz Output Power / tone (dbm) OIP3 (dbm) C -4 C +8 C Noise Figure vs. Frequency P1dB (dbm) C -4 C +8 C MHz 2 MHz 217 MHz NF (db) TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page 7 of 9 July 21

8 AH GHz Application Circuit Performance Plots O-FDMA, 64QAM-1/2, 124-FFT, 2 symbols and 3 subchannels, MHz Carrier BW Typical O-FDMA Performance at 2 C Units Channel Power dbm Gain db Input db Output db EVM % Operating Current, Icc ma Collector Efficiency % Quiescent Current, Icq 8 ma Vcc, Vpd + V C7 C8 D1 C3 C C1 C2 R1 C C4 Circuit Board Material:. GETEK, single layer, 1 oz copper, ε r = 4.2, Microstrip line details: width =.3, spacing = C6 C C22 C2 C21 C The primary RF microstrip line is Ω. 2. Do not exceed.v on Vpd or Vcc or damage to D1 will occur. 3. Components shown on the silkscreen but not on the schematic are not used. 4. C1 & C12 can be replaced with a copper trace.. Ω jumpers can be replaced with copper trace in target application. 6. The edge of is placed mil from the AH42 RFin pin. ( GHz) 7. The edge of C is placed 7 mil from the edge of. ( GHz) 8. The edge of is placed mil from the AH42 RFout pin. ( GHz) 9. The edge of C is placed 7 mil from the edge of. ( GHz) EVM (%) EVM vs. Output Average Power vs. Frequency 2.3 GHz 2.3 GHz 2.4 GHz O-FDMA, 64QAM- 1/2, 124-FFT, 2 symbols and 3 subchannels, MHz Carrier BW GHz 2.3 GHz 2.4 GHz Collector Efficiency (%) 2 1 Efficiency vs Output Average Power vs. Frequency 2.3 GHz 2.3 GHz 2.4 GHz GHz 2.3 GHz 2.4 GHz W-CDMA 3GPP Test Model 1+64 DPCH, PAR=1.3 Probability, 3.84 MHz BW TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page 8 of 9 July 21

9 AH42 Mechanical Information This package is lead-free/green/rohs-compliant. The plating material on the backside metallization is Matte Tin. It is compatible with both lead-free (maximum 26 C reflow temperature) and lead (maximum 24 C reflow temperature) soldering processes. AH42G YXXX-Z Outline Drawing Product Marking The AH42 will be marked with an AH42G designator with a lot code marked below the part designator. The Y represents the last digit of the year the part was manufactured, the XXX is an auto-generated number, and Z refers to a wafer number in a lot batch. Tape and reel specifications for this part are located on the website in the Application Notes section. ESD / MSL Information Mounting Configuration / Land Pattern ESD Rating: Class 1A Value: Passes 2V to <V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A1 ESD Rating: Class IV Value: Passes 1V min. Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C11 MSL Rating: Level 3 at +26 C convection reflow Standard: JEDEC Standard J-STD-2 1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a.3mm (#8 /.13 ) diameter drill and have a final plated thru diameter of.2 mm (.1 ). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink.. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters Functional Pin Layout Pin Function 1 VBIAS 2, 11 No Connect 3, 4,, 6 RF Input 7, 8, 9, 1 VCC / RF Output 12 IREF TriQuint Semiconductor Inc Phone FAX: info-sales@tqs.com Web site: Page 9 of 9 July 21