RTNN Etch capabilities
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1 RTNN Etch capabilities A Partnership Between NC State University, Duke University, and UNC Chapel Hill Trion Minilock II: III-V RIE Trion Phantom II: Oxide/Nitride/Polymer SPTS Pegasus DRIE Trion Minilock III: Al, GaAs Semigroup: oxide/nitride PlasmaTherm: Si, SiGe Alcatel AMS100 DRIE PM-600 Plasma Asher Alcatel AMS100 DRIE
2 Fabrication DRIE (Alcatel AMS 100) PECVD (Advanced Vacuum Vision 310) ALD (Ultratech/CNT Savannah S200) PLD (PVD Products NanoPLD-1000) Metal Sputtering (Kurt Lesker PVD 75) Electron Beam Evaporator (Thermionics V100) Hot Embosser (Jenoptik HEX03) Laser Ablation Micromill (Resonetics Rapid X250) Mask Aligner (Karl Suss MA6/BA6) Spectroscopy XPS (Kratos Axis Ultra DLD) UPS (Kratos Axis Ultra DLD) EDS (Oxford Instruments on SEM and TEM) Spectroscopic Ellipsometry (J.A. Woollam VASE) CHANL is shared instrumentation laboratory in the Department of Applied Physical Sciences at UNC. CHANL is open to UNC researchers from all departments as well as to researchers from other universities, government labs, and industry. For more information visit our website (chanl.unc.edu). Microscopy SEM (Hitachi S-4700 Cold Cathode Field Emission) ESEM (FEI Quanta 200 Field Emission Gun) FIB ((FEI Helios 600 Nanolab Dual Beam System) TEM (JEOL 100 CX II) TEM (JEOL 2010F-FasTEM) AFM (Asylum Research MFP3D) Confocal (Olympus with CARVII spinning disc) Ultramicrotome (Sorvall MT6000) Microspectophotometer (CRAIC) Staff Carrie Donley Director Wallace Ambrose Electron Microscopist Amar Khumbar - Electron Microscopist Jun Yan Research Scientist Bob Geil Cleanroom Manager
3 Specs: Alcatel AMS100 DRIE Wafer sizes: 4, 6 and pieces mounted on handle wafer Power (Source): 3000 W Power (Platen): 300 W RF/500 W LF (50 khz 460 khz) Gases: SF 6, C 4 F 8, Ar, O 2, CH 4, He Temperature ranges: -10 C to 30 C Mechanical clamping Load locked ~ 12 years old
4 Materials and processes Materials etched Si Quartz SiO2 and SiNx Photoresist ashing and descuming Metals (Ti, Ta, W) Au and Pt on occasions Masks SiO2 and SiNx Photoresists (AZ9260, S1813, SU8) Metals (Al, Cr) Main application is Si Bosch etching for microfluidics and MEMS Primarily characterized with 6 Si Dilemma between accommodating users and maintaining integrity of the system
5 Si - Low Roughness Source SH bias SF6/C4F8 SF6/C4F8 Valve/press Temp W 60 W LF/10% 200/100 sccm 3/1 s 100%/~5mTorr -10 C W 75 W LF/10% 200/100 sccm 3/1 s 100%/~5mTorr 20 C Most common process used for baselining after 15 min clean and season Substrate holder distance to source: 200 mm Si etch rate (% open area) (um/min) (95%) (60%) 1.4 (100%) (20%) Selectivity to mask PR: >25 PR: Scalloping ~100nm
6 Si - Standard Source SH bias SF6/C4F8 SF6/C4F8 Valve/press Temp W 70 W LF/20% 320/160 sccm 7/2.2 s 25%/~30 mtorr -10 C W 75 W LF/10% 320/160 sccm 7/2 s 25%/~30 mtorr 20 C Substrate holder distance to source: 200 mm Si etch rate (% open area) (um/min) (100%) (0%) 2.6 (100%) 6.0 (0%) Selectivity to mask PR: PR: Scalloping ~200 nm
7 Si - High Aspect Ratio Source SH bias SF6/C4F8/O2 SF6/C4F8 Valve/press Temp W 75 W LF/10% 300/200/100 sccm 4/2/1 s 100%/~5 mtorr 0 C Substrate holder distance to source: 120 mm 6 Si etch rate (% open area) (um/min) 3.2 (40 %) Selectivity to mask PR: >21 30:1 is supposedly possible Above process not optimized
8 Si - High Etch Rate Source SH bias SF6/C4F8 SF6/C4F8 Valve/press Temp W 75 W LF/10% 700/100 sccm 7/2 s 25%/~30 mtorr 10 C Substrate holder distance to source: 120 mm Si etch rate (% open area) (um/min) 6 >10.0 (20%) Selectivity to mask PR: > 50 Heated liner tends to overheat for long (~30 min) runs
9 Quartz etching Source SH bias Ar/C4F8 Ar/C4F8 Valve/press Temp W W RF 150/20 sccm const. flow 100%/~5 mtorr 0 C Substrate moved closer to source (120 mm) Considerable FC in chamber User should perform O2 clean regularly
10 Ti Metal Etching Source SH bias SF6/O2/Ar SF6/O2/Ar Valve/press Temp Etch rate 500 W 75 W RF 150/20/50 sccm const. flow 25%/~30 mtorr 20 C 125 nm/min W Source SH bias SF6 SF6 Valve/press Temp Etch rate 1200 W 75 W RF 300 sccm const. flow 100%/~10 mtorr 20 C 440 nm/min Pt Source SH bias SF6/Ar SF6/Ar Valve/press Temp Etch rate 350 W 75 W RF 50/150 sccm const. flow 100%/~5 mtorr 20 C 18 nm/min Ta Source SH bias SF6/C4F8 SF6/C4F8 Valve/press Temp Etch rate 1200 W 75 W LF/10% 200/100 sccm 3/1 s 100%/~5mTorr 20 C um/min More about this process tomorrow
11 Teflon deposition Source SH bias C4F8 Valve/press Temp Etch rate W 25 W RF 50 sccm 25%/~20 mtorr 20 C nm/min An alternative to PDMS mold silanization treatments
12 Maintenance Issues Polyurethane tubing is deteriorating and leaks water ~ once/month - Replace individual tubes as they fail Pneumatic lines and fittings also deteriorating can be a subtle change and hard to find Device Net communication issues usually solved with hard reset and lots of patience Occluded stainless pump exhaust line replaced with shorter line Roughing pump failures leaking oil usually solved with new seals and vanes
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