ROM MEMORY AND DECODERS

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Timothy Carr
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1 ROM MEMORY AND DECODERS INEL427 - Spring 22

2 RANDOM ACCESS MEMORY Random Access Memory (RAM) read and write memory volatile Static RAM (SRAM) store information as long as power is applied will not lose data during a read cycle Dynamic RAM (DRAM) uses a capacitor to store data must be refreshed periodically to prevent data loss read cycles destroy DRAM data (must be re-written) SRAM takes ~ 4 x DRAM Silicon area

3 READ-ONLY MEMORY (ROM) Non-volatile ROM is often needed in digital systems such as: Holding the instruction set for a microprocessor Firmware Calculator plug-in modules Cartridge style video games

4 A 256-MBYTE MEMORY CHIP Memory block contains 2 M+N storage locations When a bit is selected, sense amplifiers: used to read/write to the RAM location Horizontal rows: wordlines Vertical lines: bitlines

5 READ-ONLY MEMORY (ROM) The basic structure of the NMOS static ROM is shown in the figure The existence of a NMOS means a is stored at that address otherwise a is stored The major downfall to this particular circuit is that it dissipates a lot of power

6 Figure 6.3 A simple MOS ROM organized as 8 words 4 bits.

7 READ-ONLY MEMORY (ROM) The domino CMOS ROM is one technique used to lower the amount of power dissipation

8 NAND-ARRAY STRUCTURE ROM l Can be directly used with NAND decoder Active-low word bits: All W's are HIGH except selected row absence of FET makes bit low; presence makes bit high

9 NMOS NOR ADDRESS DECODERS Output is high if both A and A are low Row = (A+A) Row = (A+A ) Row 2 = (A +A) Row 3 = (A +A )

10 Figure 6.25 A NOR address decoder in array form. One out of eight lines (row lines) is selected using a 3-bit address.

11 NMOS NAND ADDRESS DECODERS Output 3 is low if both A and A are high Row = (A A ) Row = (A A ) Row 2 = (A A ) Row 3 = (A A )

12 DOMINO CMOS ADDRESS DECODERS

13 PASS-TRANSISTOR COLUMN DECODER 3-bit column data selector using pass-transistor logic

14 Figure 6.27 A tree column decoder. Note that the colored path shows the transistors that are conducting when A =, A =, and A 2 =, the address that results in connecting B 5 to the data line.

15 Figure 6.26 A column decoder realized by a combination of a NOR decoder and a pass-transistor multiplexer.

16 A A ROM M 3 M 5 M 9 M M 5 M M 6 M 2 M 2 M 7 M M 3 M 4 M 8 M 4 M 6 Row decoder address A 3 A 2 A A D O transistors "ON" (subscripts only) A 2 M 7 M 8 M 9 M 2 A 3 M 2 M 22 data buffer data D O Column decoder

17 A A ROM M 3 M 5 M 9 M M 5 M M 6 M 2 M 2 M 7 M M 3 M 4 M 8 M 4 M 6 Row decoder address A 3 A 2 A A D O transistors "ON" (subscripts only) A 2 M 7 M 8 M 9 M 2 A 3 M 2 M 22 data buffer data D O Column decoder

18 A A ROM M 3 M 5 M 9 M M 5 M M 6 M 2 M 2 M 7 M M 3 M 4 M 8 M 4 M 6 Row decoder address A 3 A 2 A A D O transistors "ON" (subscripts only) A 2 M 7 M 8 M 9 M 2 A 3 M 2 M 22 data buffer data D O Column decoder

19 A A ROM M 3 M 5 M 9 M M 5 M M 6 M 2 M 2 M 7 M M 3 M 4 M 8 M 4 M 6 Row decoder A 2 M 7 M 8 address A 3 A 2 A A D O transistors "ON" (subscripts only) M 2 3,4,5,6,,3,7,8,22 M 9 3,4,7,8,2,9,2,2,2,7,8,9,,5,9,2, 22 A 3 M 2,2,7,8,9,,5,9,2, 2 M 22 3,4,5,6,,3,9,2,22 data data buffer D O Column decoder

Introduction to CMOS VLSI Design (E158) Lecture 11: Decoders and Delay Estimation

Harris Introduction to CMOS VLSI Design (E158) Lecture 11: Decoders and Delay Estimation David Harris Harvey Mudd College David_Harris@hmc.edu Based on EE271 developed by Mark Horowitz, Stanford University